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    Method of forming air gaps in a dielectric material using a sacrificial film and resulting structures
    1.
    发明授权
    Method of forming air gaps in a dielectric material using a sacrificial film and resulting structures 有权
    使用牺牲膜和所得结构在电介质材料中形成气隙的方法

    公开(公告)号：US07595555B2

    公开(公告)日：2009-09-29

    申请号：US11360097

    申请日：2006-02-22

    申请人： James S. Clarke ,  Michael D. Goodner

    发明人： James S. Clarke ,  Michael D. Goodner

    IPC分类号： H01L21/00

    CPC分类号： H01L21/7682 ,  H01L21/76831 ,  H01L23/5222 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of forming air gaps surrounding conductors in a dielectric layer, the dielectric layer comprising, for example, part of the interconnect structure of an integrated circuit device. The air gaps are formed, in part, by depositing a sacrificial material within a trench and/or via that have been formed in a dielectric layer, and the sacrificial material is ultimately removed after metal deposition to create the air gaps. A porous dielectric cap may be deposited over the dielectric layer, and the sacrificial material may be removed through this porous dielectric layer. Other embodiments are described and claimed.

    摘要翻译： 在介电层中形成围绕导体的空气间隙的方法，该介电层包括例如集成电路器件的互连结构的一部分。 气隙部分地通过在已经形成在电介质层中的沟槽和/或通孔内沉积牺牲材料而形成，并且在金属沉积之后最终去除牺牲材料以产生气隙。 可以在电介质层上沉积多孔电​​介质盖，并且可以通过该多孔介电层去除牺牲材料。 描述和要求保护其他实施例。

    Method of forming air gaps in a dielectric material using a sacrificial film
    2.
    发明授权
    Method of forming air gaps in a dielectric material using a sacrificial film 有权
    使用牺牲膜在电介质材料中形成气隙的方法

    公开(公告)号：US07071091B2

    公开(公告)日：2006-07-04

    申请号：US10828885

    申请日：2004-04-20

    申请人： James S. Clarke ,  Michael D. Goodner

    发明人： James S. Clarke ,  Michael D. Goodner

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/7682 ,  H01L21/76831 ,  H01L23/5222 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of forming air gaps surrounding conductors in a dielectric layer, the dielectric layer comprising, for example, part of the interconnect structure of an integrated circuit device. The air gaps are formed, in part, by depositing a sacrificial material within a trench and/or via that have been formed in a dielectric layer, and the sacrificial material is ultimately removed after metal deposition to create the air gaps. A porous dielectric cap may be deposited over the dielectric layer, and the sacrificial material may be removed through this porous dielectric layer. Other embodiments are described and claimed.

    摘要翻译： 在介电层中形成围绕导体的空气间隙的方法，该介电层包括例如集成电路器件的互连结构的一部分。 气隙部分地通过在已经形成在电介质层中的沟槽和/或通孔内沉积牺牲材料而形成，并且在金属沉积之后最终去除牺牲材料以产生气隙。 可以在电介质层上沉积多孔电​​介质盖，并且可以通过该多孔介电层去除牺牲材料。 描述和要求保护其他实施例。

    Healing detrimental bonds in deposited materials
    4.
    发明授权
    Healing detrimental bonds in deposited materials 有权
    治疗沉积物中的有害键

    公开(公告)号：US07439179B2

    公开(公告)日：2008-10-21

    申请号：US11159506

    申请日：2005-06-22

    申请人： Michael D. Goodner

    发明人： Michael D. Goodner

    IPC分类号： H01L21/4763 ,  H01L21/44

    CPC分类号： H01L21/31695 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02323 ,  H01L21/02337 ,  H01L21/0234

    摘要： A method for healing detrimental bonds in deposited materials, for example porous, low-k dielectric materials, including oxydatively processing a deposited material, processing the deposited material with a trialkyl group III compound, and processing in the presence of an alcohol. Also included in embodiments of the invention are materials with bonds healed by embodiments of the claimed method.

    摘要翻译： 一种用于在沉积材料中修复有害键的方法，例如多孔，低k电介质材料，包括氧化处理沉积材料，用三烷基III族化合物处理沉积材料，以及在醇存在下加工。 还包括在本发明的实施方案中的是具有通过所要求保护的方法的实施方案治愈的结合的材料。