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    Self Forming Metal Fluoride Barriers for Fluorinated Low-K Dielectrics
    2.
    发明申请
    Self Forming Metal Fluoride Barriers for Fluorinated Low-K Dielectrics 审中-公开
    氟化低K电介质的自形成金属氟化物屏障

    公开(公告)号：US20100244252A1

    公开(公告)日：2010-09-30

    申请号：US12416131

    申请日：2009-03-31

    申请人： Christopher J. Jezewski ,  Daniel J. Zierath ,  Florian Gstrein

    发明人： Christopher J. Jezewski ,  Daniel J. Zierath ,  Florian Gstrein

    IPC分类号： H01L23/538 ,  H01L21/768

    CPC分类号： H01L23/53238 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76867 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A device and method of forming fluoride metal barriers at an interface of a fluorinated low-K dielectric and Cu or Cu alloy interconnects is disclosed. The fluoride metal barriers may prevent interconnects from reacting with the fluorinated low-K dielectric. The method may include depositing a thin film of metal or metal alloy on the fluorinated low-K dielectric. The thin film may include a metal or metal alloying element that reacts with free fluorine and/or fluorine compounds from the fluorinated low-K dielectric to form fluoride metal barriers.

    摘要翻译： 公开了在氟化低K电介质和Cu或Cu合金互连的界面处形成氟化物金属屏障的装置和方法。 氟化物金属屏障可以防止互连与氟化低K电介质反应。 该方法可以包括在氟化低K电介质上沉积金属或金属合金薄膜。 薄膜可以包括与来自氟化低K电介质的游离氟和/或氟化合物反应以形成氟化物金属屏障的金属或金属合金元素。

    SELF FORMING METAL FLUORIDE BARRIERS FOR FLUORINATED LOW-K DIELECTRICS
    3.
    发明申请
    SELF FORMING METAL FLUORIDE BARRIERS FOR FLUORINATED LOW-K DIELECTRICS 审中-公开
    用于氟化低K电介质的自制金属氟化物阻挡层

    公开(公告)号：US20120258588A1

    公开(公告)日：2012-10-11

    申请号：US13529067

    申请日：2012-06-21

    申请人： Christopher J. Jezewski ,  Daniel J. Zierath ,  Florian Gstrein

    发明人： Christopher J. Jezewski ,  Daniel J. Zierath ,  Florian Gstrein

    IPC分类号： H01L21/768

    CPC分类号： B67D7/348 ,  G07F13/025

    摘要： A device and method of forming fluoride metal barriers at an interface of a fluorinated low-K dielectric and Cu or Cu alloy interconnects is disclosed. The fluoride metal barriers may prevent interconnects from reacting with the fluorinated low-K dielectric. The method may include depositing a thin film of metal or metal alloy on the fluorinated low-K dielectric. The thin film may include a metal or metal alloying element that reacts with free fluorine and/or fluorine compounds from the fluorinated low-K dielectric to form fluoride metal barriers.

    摘要翻译： 公开了在氟化低K电介质和Cu或Cu合金互连的界面处形成氟化物金属屏障的装置和方法。 氟化物金属屏障可以防止互连与氟化低K电介质反应。 该方法可以包括在氟化低K电介质上沉积金属或金属合金薄膜。 薄膜可以包括与来自氟化低K电介质的游离氟和/或氟化合物反应以形成氟化物金属屏障的金属或金属合金元素。

    BARRIERLESS SINGLE-PHASE INTERCONNECT
    5.
    发明申请
    BARRIERLESS SINGLE-PHASE INTERCONNECT 审中-公开
    无障碍单相互连

    公开(公告)号：US20120153483A1

    公开(公告)日：2012-06-21

    申请号：US12973281

    申请日：2010-12-20

    申请人： Rohan N. Akolkar ,  Florian Gstrein ,  Daniel J. Zierath

    发明人： Rohan N. Akolkar ,  Florian Gstrein ,  Daniel J. Zierath

    IPC分类号： H01L23/52 ,  H01L21/768

    CPC分类号： H01L23/53261 ,  H01L21/3105 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76877 ,  H01L21/76882 ,  H01L23/53247 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of forming an interconnect structure and an integrated circuit including the interconnect structure. The method includes: depositing a dielectric layer over a conductive layer; forming an opening in the dielectric layer to expose the conductive layer; forming a barrierless single-phase interconnect comprising a metal or compound having a melting point between a melting point of copper and a melting point of tungsten. Forming includes depositing a layer of metal or compound within the opening and on an upper surface of the dielectric layer Preferably, the barrierless single-phase interconnect comprises cobalt or a cobalt containing compound. Thus, an interconnect structure, including a via and associated line, is made up of a single-phase metal or compound without the use of a different material between the interconnect and the underlying dielectric, thus improving electrical performance and reliability and further simplifying the interconnect formation process.

    摘要翻译： 形成互连结构的方法和包括所述互连结构的集成电路。 该方法包括：在导电层上沉积介电层; 在所述电介质层中形成开口以暴露所述导电层; 形成包含熔点在铜的熔点和钨的熔点之间的金属或化合物的无障碍单相互连。 形成包括在开口内和介电层的上表面上沉积一层金属或化合物。优选地，无障碍单相互连包括钴或含钴化合物。 因此，包括通孔和相关线路的互连结构由单相金属或化合物构成，而不需要在互连和下面的电介质之间使用不同的材料，从而改善电性能和可靠性并进一步简化互连 形成过程。

    INTERLAYER INTERCONNECTS AND ASSOCIATED TECHNIQUES AND CONFIGURATIONS
    7.
    发明申请
    INTERLAYER INTERCONNECTS AND ASSOCIATED TECHNIQUES AND CONFIGURATIONS 审中-公开
    中间层互连及相关技术和配置

    公开(公告)号：US20140029181A1

    公开(公告)日：2014-01-30

    申请号：US13560930

    申请日：2012-07-27

    申请人： Florian Gstrein ,  Hui Jae Yoo ,  Jacob M. Faber ,  James S. Clarke

    发明人： Florian Gstrein ,  Hui Jae Yoo ,  Jacob M. Faber ,  James S. Clarke

    IPC分类号： H01L23/522 ,  G06F1/16 ,  H01L21/768

    CPC分类号： H01L23/53233 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Embodiments of the present disclosure are directed towards interlayer interconnects and associated techniques and configurations. In one embodiment, an apparatus includes a semiconductor substrate, one or more device layers disposed on the semiconductor substrate, and one or more interconnect layers disposed on the one or more device layers, the one or more interconnect layers including interconnect structures configured to route electrical signals to or from the one or more device layers, the interconnect structures comprising copper (Cu) and germanium (Ge). Other embodiments may be described and/or claimed.

    摘要翻译： 本公开的实施例涉及层间互连和相关联的技术和配置。 在一个实施例中，一种装置包括半导体衬底，设置在半导体衬底上的一个或多个器件层，以及设置在该一个或多个器件层上的一个或多个互连层，所述一个或多个互连层包括被配置为布线 信号到或来自一个或多个器件层，包括铜（Cu）和锗（Ge）的互连结构。 可以描述和/或要求保护其他实施例。

    METALLIZATION OF FLUOROCARBON-BASED DIELECTRIC FOR INTERCONNECTS
    10.
    发明申请
    METALLIZATION OF FLUOROCARBON-BASED DIELECTRIC FOR INTERCONNECTS 有权
    用于互连的基于氟化物的电介质的金属化

    公开(公告)号：US20140027909A1

    公开(公告)日：2014-01-30

    申请号：US13560936

    申请日：2012-07-27

    申请人： Florian Gstrein ,  David J. Michalak

    发明人： Florian Gstrein ,  David J. Michalak

    IPC分类号： H01L23/522 ,  H01L21/768

    CPC分类号： H01L21/0212 ,  G06F1/16 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/3212 ,  H01L21/52 ,  H01L21/76802 ,  H01L21/76829 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/53242 ,  H01L23/53257 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Embodiments of the present disclosure are directed towards metallization of a fluorocarbon-based dielectric material for interconnect applications. In one embodiment, an apparatus includes a semiconductor substrate, a device layer disposed on the semiconductor substrate, the device layer including one or more transistor devices, and an interconnect layer disposed on the device layer, the interconnect layer comprising a fluorocarbon-based dielectric material, where x represents a stoichiometric quantity of fluorine relative to carbon in the dielectric material, and one or more interconnect structures configured to route electrical signals to or from the one or more transistor devices, the one or more interconnect structures comprising cobalt (Co), or ruthenium (Ru), or combinations thereof. Other embodiments may be described and/or claimed.

    摘要翻译： 本公开的实施例涉及用于互连应用的基于碳氟化合物的介电材料的金属化。 在一个实施例中，一种设备包括半导体衬底，设置在半导体衬底上的器件层，器件层包括一个或多个晶体管器件，以及布置在器件层上的互连层，该互连层包括氟碳基电介质材料 ，其中x表示相对于介电材料中的碳的化学计量的氟，以及一个或多个互连结构，其配置成将电信号传递到一个或多个晶体管器件或从一个或多个晶体管器件引出，所述一个或多个互连结构包括钴（Co） 或钌（Ru）或其组合。 可以描述和/或要求保护其他实施例。