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    Barrier layers
    6.
    发明授权
    Barrier layers 有权
    阻隔层

    公开(公告)号：US08508018B2

    公开(公告)日：2013-08-13

    申请号：US12890462

    申请日：2010-09-24

    申请人： Rohan N. Akolkar ,  Sridhar Balakrishnan ,  James S. Clarke ,  Christopher J. Jezewski ,  Philip Yashar

    发明人： Rohan N. Akolkar ,  Sridhar Balakrishnan ,  James S. Clarke ,  Christopher J. Jezewski ,  Philip Yashar

    IPC分类号： H01L29/00

    CPC分类号： C25D5/02 ,  C23C28/023 ,  C25D7/123 ,  H01L21/76831 ,  H01L21/76858 ,  H01L21/76867 ,  H01L21/76868 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T428/12361 ,  Y10T428/12389 ,  H01L2924/00

    摘要： Methods for fabricating integrated circuit electrical interconnects and electrical interconnects are provided. Methods include providing a substrate having a surface, the surface having a feature formed therein wherein the feature is a trench or via, depositing a metal layer, the metal of the metal layer being selected from the group consisting of Ru, Co, Pt, Ir, Pd, Re, and Rh, onto surfaces of the feature, depositing a copper seed layer wherein the copper seed layer comprises a dopant and the dopant is selected from the group consisting of Mn, Mg, MgB2. P, B, Al, Co and combinations thereof, onto the metal layer, and depositing copper into the feature. Devices comprising copper interconnects having metal liner layers are provided. Devices having liner layers comprising ruthenium are provided.

    摘要翻译： 提供了制造集成电路电互连和电互连的方法。 方法包括提供具有表面的基底，所述表面具有形成在其中的特征，其中所述特征是沟槽或通孔，沉积金属层，所述金属层的金属选自由Ru，Co，Pt，Ir ，Pd，Re和Rh沉积到特征的表面上，沉积铜籽晶层，其中铜籽晶层包含掺杂剂，掺杂剂选自Mn，Mg，MgB 2。 P，B，Al，Co及其组合在金属层上，并将铜沉积到特征中。 提供了包括具有金属衬里层的铜互连的装置。 提供了具有包含钌的衬里层的器件。

    Methods to form memory devices having a capacitor with a recessed electrode
    8.
    发明授权
    Methods to form memory devices having a capacitor with a recessed electrode 有权
    形成具有带有凹陷电极的电容器的存储器件的方法

    公开(公告)号：US08441097B2

    公开(公告)日：2013-05-14

    申请号：US12646957

    申请日：2009-12-23

    申请人： Joseph M. Steigerwald ,  Nick Lindert ,  Steven J. Keating ,  Christopher J. Jezewski ,  Timothy E. Glassman

    发明人： Joseph M. Steigerwald ,  Nick Lindert ,  Steven J. Keating ,  Christopher J. Jezewski ,  Timothy E. Glassman

    IPC分类号： H01L21/02

    CPC分类号： H01L28/90 ,  H01L27/0733

    摘要： Methods to form memory devices having a MIM capacitor with a recessed electrode are described. In one embodiment, a method of forming a MIM capacitor with a recessed electrode includes forming an excavated feature defined by a lower portion that forms a bottom and an upper portion that forms sidewalls of the excavated feature. The method includes depositing a lower electrode layer in the feature, depositing an electrically insulating layer on the lower electrode layer, and depositing an upper electrode layer on the electrically insulating layer to form the MIM capacitor. The method includes removing an upper portion of the MIM capacitor to expose an upper surface of the electrode layers and then selectively etching one of the electrode layers to recess one of the electrode layers. This recess isolates the electrodes from each other and reduces the likelihood of a current leakage path between the electrodes.

    摘要翻译： 描述形成具有凹陷电极的MIM电容器的存储器件的方法。 在一个实施例中，形成具有凹陷电极的MIM电容器的方法包括形成由形成底部的下部和形成挖掘特征的侧壁的上部限定的挖掘特征。 该方法包括在特征中沉积下电极层，在下电极层上沉积电绝缘层，以及在电绝缘层上沉积上电极层以形成MIM电容器。 该方法包括去除MIM电容器的上部以暴露电极层的上表面，然后选择性地蚀刻电极层之一以使一个电极层凹陷。 该凹槽将电极彼此隔离并且减小了电极之间的电流泄漏路径的可能性。

    METHODS TO FORM MEMORY DEVICES HAVING A CAPACITOR WITH A RECESSED ELECTRODE
    9.
    发明申请
    METHODS TO FORM MEMORY DEVICES HAVING A CAPACITOR WITH A RECESSED ELECTRODE 有权
    用于形成具有电容器的电容器的存储器件的方法

    公开(公告)号：US20110147888A1

    公开(公告)日：2011-06-23

    申请号：US12646957

    申请日：2009-12-23

    申请人： Joseph M. Steigerwald ,  Nick Lindert ,  Steven J. Keating ,  Christopher J. Jezewski ,  Timothy E. Glassman

    发明人： Joseph M. Steigerwald ,  Nick Lindert ,  Steven J. Keating ,  Christopher J. Jezewski ,  Timothy E. Glassman

    IPC分类号： H01L29/92 ,  H01L21/02

    CPC分类号： H01L28/90 ,  H01L27/0733

    摘要： Methods to form memory devices having a MIM capacitor with a recessed electrode are described. In one embodiment, a method of forming a MIM capacitor with a recessed electrode includes forming an excavated feature defined by a lower portion that forms a bottom and an upper portion that forms sidewalls of the excavated feature. The method includes depositing a lower electrode layer in the feature, depositing an electrically insulating layer on the lower electrode layer, and depositing an upper electrode layer on the electrically insulating layer to form the MIM capacitor. The method includes removing an upper portion of the MIM capacitor to expose an upper surface of the electrode layers and then selectively etching one of the electrode layers to recess one of the electrode layers. This recess isolates the electrodes from each other and reduces the likelihood of a current leakage path between the electrodes.

    摘要翻译： 描述形成具有凹陷电极的MIM电容器的存储器件的方法。 在一个实施例中，形成具有凹陷电极的MIM电容器的方法包括形成由形成底部的下部和形成挖掘特征的侧壁的上部限定的挖掘特征。 该方法包括在特征中沉积下电极层，在下电极层上沉积电绝缘层，以及在电绝缘层上沉积上电极层以形成MIM电容器。 该方法包括去除MIM电容器的上部以暴露电极层的上表面，然后选择性地蚀刻电极层之一以使一个电极层凹陷。 该凹槽将电极彼此隔离并且减小了电极之间的电流泄漏路径的可能性。