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    Formation of devices by epitaxial layer overgrowth
    1.
    发明授权
    Formation of devices by epitaxial layer overgrowth 有权
    通过外延层过度生长形成器件

    公开(公告)号：US08034697B2

    公开(公告)日：2011-10-11

    申请号：US12680872

    申请日：2009-09-18

    申请人： James Fiorenza ,  Anthony Lochtefeld ,  Jie Bai ,  Ji-Soo Park ,  Jennifer Hydrick ,  Jizhong Li ,  Zhiyuan Cheng

    发明人： James Fiorenza ,  Anthony Lochtefeld ,  Jie Bai ,  Ji-Soo Park ,  Jennifer Hydrick ,  Jizhong Li ,  Zhiyuan Cheng

    IPC分类号： H01L21/20 ,  H01L21/36

    CPC分类号： H01L21/02538 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02647 ,  H01L29/205 ,  H01L31/0687 ,  H01L31/06875 ,  H01L31/1808 ,  H01L31/1852 ,  H01L31/1892 ,  Y02E10/544

    摘要： Methods and structures are provided for formation of devices, e.g., solar cells, on substrates including, e.g., lattice-mismatched materials, by the use of aspect ratio trapping (ART) and epitaxial layer overgrowth (ELO). In general, in a first aspect, embodiments of the invention may include a method of forming a structure. The method includes forming a first opening in a masking layer disposed over a substrate that includes a first semiconductor material. A first layer, which includes a second semi-conductor material lattice-mismatched to the first semiconductor material, is formed within the first opening. The first layer has a thickness sufficient to extend above a top surface of the masking layer. A second layer, which includes the second semiconductor material, is formed on the first layer and over at least a portion of the masking layer. A vertical growth rate of the first layer is greater than a lateral growth rate of the first layer and a lateral growth rate of the second layer is greater than a vertical growth rate of the second layer.

    摘要翻译： 提供了用于通过使用纵横比捕获（ART）和外延层过度生长（ELO）在基底上形成诸如晶格失配的材料的器件（例如太阳能电池）的方法和结构。 通常，在第一方面中，本发明的实施例可以包括形成结构的方法。 该方法包括在设置在包括第一半导体材料的衬底之上的掩模层中形成第一开口。 包括与第一半导体材料晶格失配的第二半导体材料的第一层形成在第一开口内。 第一层具有足以在掩模层的顶表面上方延伸的厚度。 包括第二半导体材料的第二层形成在第一层上并且在掩模层的至少一部分之上。 第一层的垂直生长速率大于第一层的横向生长速率，第二层的横向生长速率大于第二层的垂直生长速率。

    Formation of Devices by Epitaxial Layer Overgrowth
    2.
    发明申请
    Formation of Devices by Epitaxial Layer Overgrowth 有权
    通过外延层生长形成器件

    公开(公告)号：US20100216277A1

    公开(公告)日：2010-08-26

    申请号：US12680872

    申请日：2009-09-18

    申请人： James Fiorenza ,  Anthony Lochtefeld ,  Jie Bai ,  Ji-Soo Park ,  Jennifer Hydrick ,  Jizhong Li ,  Zhiyuan Cheng

    发明人： James Fiorenza ,  Anthony Lochtefeld ,  Jie Bai ,  Ji-Soo Park ,  Jennifer Hydrick ,  Jizhong Li ,  Zhiyuan Cheng

    IPC分类号： H01L31/18 ,  C30B25/04 ,  B32B38/10 ,  H01L21/20

    CPC分类号： H01L21/02538 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02647 ,  H01L29/205 ,  H01L31/0687 ,  H01L31/06875 ,  H01L31/1808 ,  H01L31/1852 ,  H01L31/1892 ,  Y02E10/544

    摘要： Methods and structures are provided for formation of devices, e.g., solar cells, on substrates including, e.g., lattice-mismatched materials, by the use of aspect ratio trapping (ART) and epitaxial layer overgrowth (ELO). In general, in a first aspect, embodiments of the invention may include a method of forming a structure. The method includes forming a first opening in a masking layer disposed over a substrate that includes a first semiconductor material. A first layer, which includes a second semi-conductor material lattice-mismatched to the first semiconductor material, is formed within the first opening. The first layer has a thickness sufficient to extend above a top surface of the masking layer. A second layer, which includes the second semiconductor material, is formed on the first layer and over at least a portion of the masking layer. A vertical growth rate of the first layer is greater than a lateral growth rate of the first layer and a lateral growth rate of the second layer is greater than a vertical growth rate of the second layer.

    摘要翻译： 提供了用于通过使用纵横比捕获（ART）和外延层过度生长（ELO）在基底上形成诸如晶格失配的材料的器件（例如太阳能电池）的方法和结构。 通常，在第一方面中，本发明的实施例可以包括形成结构的方法。 该方法包括在设置在包括第一半导体材料的衬底之上的掩模层中形成第一开口。 包括与第一半导体材料晶格失配的第二半导体材料的第一层形成在第一开口内。 第一层具有足以在掩模层的顶表面上方延伸的厚度。 包括第二半导体材料的第二层形成在第一层上并且在掩模层的至少一部分之上。 第一层的垂直生长速率大于第一层的横向生长速率，第二层的横向生长速率大于第二层的垂直生长速率。

    Nitride-Based Multi-Junction Solar Cell Modules and Methods for Making the Same
    9.
    发明申请
    Nitride-Based Multi-Junction Solar Cell Modules and Methods for Making the Same 有权
    基于氮化物的多结太阳能电池模块及其制造方法

    公开(公告)号：US20110011438A1

    公开(公告)日：2011-01-20

    申请号：US12891202

    申请日：2010-09-27

    申请人： Jizhong Li

    发明人： Jizhong Li

    IPC分类号： H01L31/05 ,  H01L31/18

    CPC分类号： H01L31/0687 ,  H01L21/02389 ,  H01L31/056 ,  H01L31/0693 ,  H01L31/078 ,  H01L31/1852 ,  H01L31/1856 ,  Y02E10/544 ,  Y02P70/521

    摘要： A backside illuminated multi junction solar cell module includes a substrate, multiple multi junction solar cells, and a cell interconnection that provides a series connection between at least two of the multi junction solar cells. The substrate may include a material that is substantially transparent to solar radiation. Each multi junction solar cell includes a first active cell, grown over the substrate, for absorbing a first portion of the solar radiation for conversion into electrical energy and a second active cell, grown over the first active cell, for absorbing a second portion of the solar radiation for conversion into electrical energy. At least one of the first and second active cells includes a nitride.

    摘要翻译： 背面照明多结太阳能电池模块包括衬底，多个多结太阳能电池和在多结太阳能电池中的至少两个之间提供串联连接的电池互连。 衬底可以包括对太阳辐射基本透明的材料。 每个多结太阳能电池包括在衬底上生长的用于吸收用于转换成电能的太阳辐射的第一部分以及在第一活性电池上生长的第二活性电池的第一活性电池，用于吸收第二部分的 太阳辐射转化为电能。 第一和第二活性电池中的至少一个包括氮化物。

    Nitride-based multi-junction solar cell modules and methods for making the same
    10.
    发明授权
    Nitride-based multi-junction solar cell modules and methods for making the same 有权
    基于氮化物的多结太阳能电池模块及其制造方法

    公开(公告)号：US07825328B2

    公开(公告)日：2010-11-02

    申请号：US12031338

    申请日：2008-02-14

    申请人： Jizhong Li

    发明人： Jizhong Li

    IPC分类号： H02N6/00

    CPC分类号： H01L31/0687 ,  H01L21/02389 ,  H01L31/056 ,  H01L31/0693 ,  H01L31/078 ,  H01L31/1852 ,  H01L31/1856 ,  Y02E10/544 ,  Y02P70/521

    摘要： A backside illuminated multi-junction solar cell module includes a substrate, multiple multi-junction solar cells, and a cell interconnection that provides a series connection between at least two of the multi-junction solar cells. The substrate may include a material that is substantially transparent to solar radiation. Each multi-junction solar cell includes a first active cell, grown over the substrate, for absorbing a first portion of the solar radiation for conversion into electrical energy and a second active cell, grown over the first active cell, for absorbing a second portion of the solar radiation for conversion into electrical energy. At least one of the first and second active cells includes a nitride.

    摘要翻译： 背面照明的多结太阳能电池模块包括衬底，多个多结太阳能电池和在至少两个多结太阳能电池之间提供串联连接的电池互连。 衬底可以包括对太阳辐射基本透明的材料。 每个多结太阳能电池包括生长在衬底上的第一活性电池，用于吸收用于转换成电能的太阳辐射的第一部分和生长在第一活性电池上的第二活性电池，用于吸收第二部分的 太阳辐射转化为电能。 第一和第二活性电池中的至少一个包括氮化物。