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    Formation of devices by epitaxial layer overgrowth
    7.
    发明授权
    Formation of devices by epitaxial layer overgrowth 有权
    通过外延层过度生长形成器件

    公开(公告)号：US08034697B2

    公开(公告)日：2011-10-11

    申请号：US12680872

    申请日：2009-09-18

    申请人： James Fiorenza ,  Anthony Lochtefeld ,  Jie Bai ,  Ji-Soo Park ,  Jennifer Hydrick ,  Jizhong Li ,  Zhiyuan Cheng

    发明人： James Fiorenza ,  Anthony Lochtefeld ,  Jie Bai ,  Ji-Soo Park ,  Jennifer Hydrick ,  Jizhong Li ,  Zhiyuan Cheng

    IPC分类号： H01L21/20 ,  H01L21/36

    CPC分类号： H01L21/02538 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02647 ,  H01L29/205 ,  H01L31/0687 ,  H01L31/06875 ,  H01L31/1808 ,  H01L31/1852 ,  H01L31/1892 ,  Y02E10/544

    摘要： Methods and structures are provided for formation of devices, e.g., solar cells, on substrates including, e.g., lattice-mismatched materials, by the use of aspect ratio trapping (ART) and epitaxial layer overgrowth (ELO). In general, in a first aspect, embodiments of the invention may include a method of forming a structure. The method includes forming a first opening in a masking layer disposed over a substrate that includes a first semiconductor material. A first layer, which includes a second semi-conductor material lattice-mismatched to the first semiconductor material, is formed within the first opening. The first layer has a thickness sufficient to extend above a top surface of the masking layer. A second layer, which includes the second semiconductor material, is formed on the first layer and over at least a portion of the masking layer. A vertical growth rate of the first layer is greater than a lateral growth rate of the first layer and a lateral growth rate of the second layer is greater than a vertical growth rate of the second layer.

    摘要翻译： 提供了用于通过使用纵横比捕获（ART）和外延层过度生长（ELO）在基底上形成诸如晶格失配的材料的器件（例如太阳能电池）的方法和结构。 通常，在第一方面中，本发明的实施例可以包括形成结构的方法。 该方法包括在设置在包括第一半导体材料的衬底之上的掩模层中形成第一开口。 包括与第一半导体材料晶格失配的第二半导体材料的第一层形成在第一开口内。 第一层具有足以在掩模层的顶表面上方延伸的厚度。 包括第二半导体材料的第二层形成在第一层上并且在掩模层的至少一部分之上。 第一层的垂直生长速率大于第一层的横向生长速率，第二层的横向生长速率大于第二层的垂直生长速率。

    Formation of Devices by Epitaxial Layer Overgrowth
    8.
    发明申请
    Formation of Devices by Epitaxial Layer Overgrowth 有权
    通过外延层生长形成器件

    公开(公告)号：US20100216277A1

    公开(公告)日：2010-08-26

    申请号：US12680872

    申请日：2009-09-18

    申请人： James Fiorenza ,  Anthony Lochtefeld ,  Jie Bai ,  Ji-Soo Park ,  Jennifer Hydrick ,  Jizhong Li ,  Zhiyuan Cheng

    发明人： James Fiorenza ,  Anthony Lochtefeld ,  Jie Bai ,  Ji-Soo Park ,  Jennifer Hydrick ,  Jizhong Li ,  Zhiyuan Cheng

    IPC分类号： H01L31/18 ,  C30B25/04 ,  B32B38/10 ,  H01L21/20

    CPC分类号： H01L21/02538 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02647 ,  H01L29/205 ,  H01L31/0687 ,  H01L31/06875 ,  H01L31/1808 ,  H01L31/1852 ,  H01L31/1892 ,  Y02E10/544

    摘要： Methods and structures are provided for formation of devices, e.g., solar cells, on substrates including, e.g., lattice-mismatched materials, by the use of aspect ratio trapping (ART) and epitaxial layer overgrowth (ELO). In general, in a first aspect, embodiments of the invention may include a method of forming a structure. The method includes forming a first opening in a masking layer disposed over a substrate that includes a first semiconductor material. A first layer, which includes a second semi-conductor material lattice-mismatched to the first semiconductor material, is formed within the first opening. The first layer has a thickness sufficient to extend above a top surface of the masking layer. A second layer, which includes the second semiconductor material, is formed on the first layer and over at least a portion of the masking layer. A vertical growth rate of the first layer is greater than a lateral growth rate of the first layer and a lateral growth rate of the second layer is greater than a vertical growth rate of the second layer.

    摘要翻译： 提供了用于通过使用纵横比捕获（ART）和外延层过度生长（ELO）在基底上形成诸如晶格失配的材料的器件（例如太阳能电池）的方法和结构。 通常，在第一方面中，本发明的实施例可以包括形成结构的方法。 该方法包括在设置在包括第一半导体材料的衬底之上的掩模层中形成第一开口。 包括与第一半导体材料晶格失配的第二半导体材料的第一层形成在第一开口内。 第一层具有足以在掩模层的顶表面上方延伸的厚度。 包括第二半导体材料的第二层形成在第一层上并且在掩模层的至少一部分之上。 第一层的垂直生长速率大于第一层的横向生长速率，第二层的横向生长速率大于第二层的垂直生长速率。

    CHARGED PARTICLE BEAM DEVICE AND A METHOD OF IMPROVING IMAGE QUALITY OF THE SAME
    9.
    发明申请
    CHARGED PARTICLE BEAM DEVICE AND A METHOD OF IMPROVING IMAGE QUALITY OF THE SAME 有权
    充电颗粒束装置和改进其图像质量的方法

    公开(公告)号：US20120274757A1

    公开(公告)日：2012-11-01

    申请号：US13513280

    申请日：2010-11-08

    申请人： Jie Bai ,  Kenji Nakahira ,  Atsushi Miyamoto ,  Chie Shishido ,  Hideyuki Kazumi

    发明人： Jie Bai ,  Kenji Nakahira ,  Atsushi Miyamoto ,  Chie Shishido ,  Hideyuki Kazumi

    IPC分类号： H04N7/18

    CPC分类号： H01J37/28 ,  H01J37/244 ,  H01J2237/24495 ,  H01J2237/2809 ,  H01J2237/2817 ,  H01L22/12

    摘要： The invention relates to a technique of improving a contrast of a lower-layer pattern in a multi layer by synthesizing detected signals from a plurality of detectors by using an appropriate allocation ratio in accordance with pattern arrangement. In a charged particle beam device capable of improving image quality by using detected images obtained from a plurality of detectors and in a method of improving the image quality, a method of generating one or more output images from detected images corresponding to respective outputs of the detectors that are arranged at different locations is controlled by using information of a pattern direction, an edge strength, or others calculated from a design data or the detected image. In this manner, a detection area of the detected signals can be expanded by using the plurality of detectors, and the image quality such as the contrast can be improved by synthesizing the detected signals by using the pattern direction or the edge strength calculated from the design data or the detected images.

    摘要翻译： 本发明涉及一种通过根据图案布置使用合适的分配比例来合成来自多个检测器的检测信号来提高多层下层图案的对比度的技术。 在能够通过使用从多个检测器获得的检测图像来提高图像质量的带电粒子束装置中，以及提高图像质量的方法中，提供一种从与检测器的各个输出对应的检测图像生成一个或多个输出图像的方法 通过使用从设计数据或检测到的图像计算的图案方向，边缘强度或其他的信息来控制布置在不同位置处的位置。 以这种方式，可以通过使用多个检测器来扩展检测信号的检测区域，并且可以通过使用从设计计算出的图案方向或边缘强度合成检测信号来提高诸如对比度的图像质量 数据或检测到的图像。

    A METHOD FOR DETECTING THE OPERATION BEHAVIOR OF THE PROGRAM AND A METHOD FOR DETECTING AND CLEARING THE VIRUS PROGRAM
    10.
    发明申请
    A METHOD FOR DETECTING THE OPERATION BEHAVIOR OF THE PROGRAM AND A METHOD FOR DETECTING AND CLEARING THE VIRUS PROGRAM 审中-公开
    检测程序的操作行为的方法和用于检测和清除病毒程序的方法

    公开(公告)号：US20090133124A1

    公开(公告)日：2009-05-21

    申请号：US12093784

    申请日：2006-10-31

    申请人： Jie Bai

    发明人： Jie Bai

    IPC分类号： G06F21/00 ,  G06F12/14

    CPC分类号： G06F21/564

    摘要： A method for detecting the operation behavior of the program includes: obtaining the destructive operation behavior of the known virus program; setting the corresponding control and process program according to the destructive operation behavior; making the control and process program get the control right of destructive operation behavior; the destructive operation behavior of the program to be detected calling the corresponding control and process program, the corresponding control and process program recording the operation behavior of the said program to be detected. The method can also return the success response information by the control and process program, so as to induce the program to be detected to perform the next behavior, but the program to be detected don't perform in practicality. That is, the present invention can provide a virtual environment for the program to be detected in order to record a series behavior of it. A method for clearing the virus program setup and perform the adverse behavior operation of the program based on the behavior of the virus program to realize the recovery of the demolished data by the virus.

    摘要翻译： 一种用于检测程序的操作行为的方法包括：获得已知病毒程序的破坏性操作行为; 根据破坏性操作行为设置相应的控制和处理程序; 使控制和处理程序获得破坏性操作行为的控制权; 要检测的程序的破坏性操作行为调用相应的控制和处理程序，相应的控制和处理程序记录要检测的所述程序的操作行为。 该方法还可以通过控制和处理程序返回成功响应信息，以便引导程序被检测以执行下一个行为，但是要检测的程序在实际上不执行。 也就是说，本发明可以为要检测的程序提供虚拟环境，以便记录其串行行为。 一种用于根据病毒程序的行为来清除病毒程序设置并执行程序的不利行为操作的方法，以实现病毒恢复被拆除的数据。