TRANSLATION APPARATUS AND METHOD USING MULTIPLE TRANSLATION ENGINES
    1.
    发明申请
    TRANSLATION APPARATUS AND METHOD USING MULTIPLE TRANSLATION ENGINES 审中-公开
    翻译装置和使用多个翻译引擎的方法

    公开(公告)号:US20130030790A1

    公开(公告)日:2013-01-31

    申请号:US13560151

    申请日:2012-07-27

    IPC分类号: G06F17/28

    CPC分类号: G06F17/2854

    摘要: Disclosed is a translation apparatus and method using multiple translation engines. The translation apparatus using the multiple translation engines may include a structure analysis unit to analyze a structure of an original sentence, a sentence receiver to receive, from translation engines, translations of the original sentence, and a sentence determining unit to determine one of the received translations to be a translation result based on performance information for the translation engines corresponding to the structure of the original sentence.

    摘要翻译: 公开了一种使用多个翻译引擎的翻译装置和方法。 使用多个翻译引擎的翻译装置可以包括分析原始句子的结构的结构分析单元,从翻译引擎接收原始句子的翻译的句子接收器,以及判定所接收的一个的句子确定单元 翻译成为基于与原始句子结构对应的翻译引擎的性能信息的翻译结果。

    DIALOGUE METHOD AND SYSTEM FOR THE SAME
    2.
    发明申请
    DIALOGUE METHOD AND SYSTEM FOR THE SAME 审中-公开
    对话方法和系统

    公开(公告)号:US20120156660A1

    公开(公告)日:2012-06-21

    申请号:US13327392

    申请日:2011-12-15

    IPC分类号: G09B19/04

    CPC分类号: G09B19/06 G09B5/06

    摘要: A dialogue system include learning initiation unit which receives conversation education domain and target completion condition inconversation education domain and receives user's utterance, voice recognition unit which converts user's utterance into utterance text based on utterance information, language understanding unit which determines user's dialogue act based on converted utterance text and generates logical expression using slot expression corresponding to determined dialogue act and slot expression defined in conversation education domain, dialogue/progress management unit which determines utterance vertex with logical expression similar to that of utterance patterns of plurality of utterance vertices connected to system's final utterance vertex in dynamic dialogue graph and determines utterance vertices connected to determined utterance vertex as next utterance, system dialogue generation unit which retrieves utterance patterns connected to utterance vertex corresponding to determined next utterance and generates system's utterance sentence, and voice synthesizer which synthesizes system's utterance sentence into voice and outputs synthesized voice.

    摘要翻译: 对话系统包括接收会话教育领域和目标完成条件不合理教育领域并接收用户话语的学习启动单元,基于话语信息将用户话语转换为话语文本的语音识别单元,基于转换的用户决定用户对话行为的语言理解单元 发音文本,并使用与会话教育领域中定义的确定对话行为和时隙表达式相对应的时隙表达式生成逻辑表达式,对话/进度管理单元,其确定具有与系统最终连接的多个话语顶点的话语模式相似的逻辑表达式的话语顶点 在动态对话图中发出话题顶点并确定连接到确定的话语顶点的话语顶点作为下一个发音,系统对话生成单元检索连接到对应于d的话语顶点的话语模式 产生下一个发音并产生系统的话语句子,以及将系统的话语句合成语音并输出合成语音的语音合成器。

    METHOD OF FABRICATING SEMICONDCUTOR DEVICE
    4.
    发明申请
    METHOD OF FABRICATING SEMICONDCUTOR DEVICE 审中-公开
    制造半导体器件的方法

    公开(公告)号:US20090117732A1

    公开(公告)日:2009-05-07

    申请号:US12253251

    申请日:2008-10-17

    申请人: Jong-Hun Shin

    发明人: Jong-Hun Shin

    IPC分类号: H01L21/768

    CPC分类号: H01L21/7682 H01L2221/1047

    摘要: A method of fabricating a semiconductor device that may include forming an insulating interlayer on and/or over a semiconductor substrate, and then forming a damascene structure by patterning the insulating interlayer, and then forming a metal layer on and/or over the insulating interlayer and filling the damascene structure, and then forming a metal line by planarizing the metal layer until an upper surface of the insulating interlayer is exposed, and then forming pores in the insulating interlayer by performing thermal treatment of the planarized structure.

    摘要翻译: 一种制造半导体器件的方法,其可以包括在半导体衬底上和/或之上形成绝缘中间层,然后通过图案化绝缘中间层形成镶嵌结构,然后在绝缘夹层上和/或上方形成金属层, 填充镶嵌结构,然后通过使金属层平坦化形成金属线,直到绝缘中间层的上表面露出,然后通过对平坦化结构进行热处理在绝缘中间层中形成孔。

    METHOD AND APPARATUS FOR GENERATING TRANSLATION KNOWLEDGE SERVER
    5.
    发明申请
    METHOD AND APPARATUS FOR GENERATING TRANSLATION KNOWLEDGE SERVER 审中-公开
    用于生成翻译知识服务器的方法和装置

    公开(公告)号:US20120150529A1

    公开(公告)日:2012-06-14

    申请号:US13316369

    申请日:2011-12-09

    IPC分类号: G06F17/28

    CPC分类号: G06F17/289 G06F17/2809

    摘要: A method and apparatus for generating a translation knowledge server, which can generate a translation knowledge server based on translation knowledge collected in real time is provided. The apparatus for generating translation knowledge server may include: data collector which collects initial translation knowledge data; data analyzer which performs morphological analysis and syntactic analysis on the initial translation knowledge data received from the data collector and outputs analyzed data; and translation knowledge learning unit which learns real-time translation knowledge by determining target word for each domain from the analyzed data based on predetermined domain information or by determining a domain by automatic clustering. According to the present invention, it is possible to obtain translation knowledge by analyzing documents present in a web or provided by a user in real time and to improve the quality of translation by applying the obtained translation knowledge to a translation engine.

    摘要翻译: 提供了一种用于生成翻译知识服务器的方法和装置,其可以基于实时收集的翻译知识生成翻译知识服务器。 用于产生翻译知识服务器的装置可以包括:收集初始翻译知识数据的数据收集器; 数据分析器,对从数据收集器接收的初始翻译知识数据进行形态分析和句法分析,并输出分析数据; 以及翻译知识学习单元,其通过基于预定的域信息从所分析的数据中确定每个域的目标词,或者通过自动聚类确定域来学习实时翻译知识。 根据本发明,可以通过分析网页中存在的文档或由用户实时提供的文档来获得翻译知识,并通过将获得的翻译知识应用于翻译引擎来提高翻译质量。

    METHOD FOR CLEANING SEMICONDUCTOR DEVICE
    6.
    发明申请
    METHOD FOR CLEANING SEMICONDUCTOR DEVICE 审中-公开
    清洁半导体器件的方法

    公开(公告)号:US20090029529A1

    公开(公告)日:2009-01-29

    申请号:US12175734

    申请日:2008-07-18

    申请人: Jong-Hun Shin

    发明人: Jong-Hun Shin

    IPC分类号: H01L21/306 H01L21/205

    摘要: Disclosed is a method for cleaning a semiconductor device to remove native oxides or by-products created in the process of forming silicon germanium layers. The use of the method enables removal of native oxides or by-products created in the process of forming silicon germanium layers using hydrogen bromide and prevents reoxidation which may occur in subsequent processes after forming silicon germanium layers.

    摘要翻译: 公开了一种清洁半导体器件以去除在形成硅锗层的过程中产生的天然氧化物或副产物的方法。 使用该方法能够除去在使用溴化氢形成硅锗层的过程中产生的天然氧化物或副产物,并防止在形成硅锗层之后的后续工艺中可能发生的再氧化。

    Flash Memory Cell and Method for Manufacturing the Same
    7.
    发明申请
    Flash Memory Cell and Method for Manufacturing the Same 审中-公开
    闪存单元及其制造方法

    公开(公告)号:US20080116504A1

    公开(公告)日:2008-05-22

    申请号:US11863437

    申请日:2007-09-28

    申请人: JONG HUN SHIN

    发明人: JONG HUN SHIN

    IPC分类号: H01L29/788 H01L21/336

    摘要: A flash memory cell and a method for manufacturing the same are provided. The flash memory cell includes a tunnel oxide layer pattern, a floating gate on the tunnel oxide layer pattern, a first nitride layer pattern on the floating gate, an oxide-nitride-oxide (ONO) layer pattern on the first nitride layer pattern, and a control gate on the oxide-nitride-oxide layer pattern.

    摘要翻译: 提供闪存单元及其制造方法。 闪存单元包括隧道氧化物层图案,隧道氧化物层图案上的浮动栅极,浮置栅极上的第一氮化物层图案,第一氮化物层图案上的氧化物 - 氧化物 - 氧化物(ONO)层图案,以及 氧化物 - 氮化物 - 氧化物层图案上的控制栅极。