摘要:
A resist composition includes a resin (A) containing any of repeating units (a) of general formulae (I-a) and (I-b) below and any of repeating units (b) of general formula (II) below but containing substantially no repeating unit in which an alcoholic hydroxyl group is introduced, and any of compounds (B) of general formulae (III-a) and (III-b) below.
摘要:
According to one embodiment, an actinic-ray- or radiation-sensitive resin composition includes a resin that is decomposed when acted on by an acid to thereby increase its solubility in an alkali developer, a compound that generates an acid when exposed to actinic rays or radiation, and any of basic compounds of general formula (1) below.
摘要:
Provided are an actinic ray-sensitive or radiation-sensitive resin composition; a resist film using the composition; and a pattern forming method. The actinic ray-sensitive or radiation-sensitive resin composition includes (A) a resin capable of increasing the solubility in an alkali developer by the action of an acid, the resin containing a repeating unit represented by formula (I), a repeating unit represented by formula (II) and a repeating unit represented by formula (III), and (B) a compound capable of generating a fluorine atom-containing acid upon irradiation with an actinic ray or radiation: wherein each of R1 and R11 independently represents a hydrogen atom or an alkyl group which may have a substituent, and R12 represents a phenyl group which may have a substituent.
摘要:
Provided is a method of forming a pattern, including (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, (c) developing the exposed film with a developer containing an organic solvent, and (d) rinsing the developed film with a rinse liquid containing an organic solvent, which rinse liquid has a specific gravity larger than that of the developer.
摘要:
An actinic ray-sensitive or radiation-sensitive resin composition, and a resist film and a pattern forming method using the composition are provided, the composition including (A) a compound capable of decomposing by the action of an acid to increase the solubility of the resin (A) in an alkali developer; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a basic compound; and (D) a specific compound containing at least two specific alicyclic hydrocarbon groups each substituted with a hydroxyl group.
摘要:
Provided is an actinic-ray- or radiation-sensitive resin composition and a method of forming a pattern using the same, ensuring excellent the etching resistivity and the stability during a post-exposure delay (PED) period. The composition contains a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, and a compound that generates an acid of pKa≧1.5 when exposed to actinic rays or radiation.
摘要:
An actinic ray-sensitive or radiation-sensitive resin composition including: (A) a resin that contains a repeating unit represented by formula (I) as defined in the specification, a repeating unit represented by formula (II) as defined in the specification and a repeating unit represented by formula (III-a) or (III-b) as defined in the specification; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; and (C) a solvent, wherein the solvent (C) contains ethyl lactate, and a film and a pattern forming method using the composition are provided.
摘要:
Provided is an actinic ray-sensitive or radiation-sensitive resin composition comprising (A) a specific compound represented by a general formula, (B) a resin which is alkali-insoluble or sparingly alkali-soluble and becomes easily alkali-soluble in the presence of an acid, and (C) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; a film formed using the composition; and a pattern forming method using the same.
摘要:
A pattern forming method comprising (i) a step of forming a film from a chemical amplification resist composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer, wherein the resist composition contains (A) a resin capable of increasing the polarity to decrease the solubility for an organic solvent-containing developer by the action of an acid, (B) at least one kind of a compound capable of generating a sulfonic acid represented by the specific formula upon irradiation with an actinic ray or radiation, and (C) a solvent.
摘要:
A pattern forming method comprising (i) a step of forming a film from a chemical amplification resist composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer, wherein the resist composition contains (A) a resin capable of increasing the polarity to decrease the solubility for an organic solvent-containing developer by the action of an acid, (B) at least one kind of a compound capable of generating a sulfonic acid represented by the specific formula upon irradiation with an actinic ray or radiation, and (C) a solvent.