公开(公告)号：US06873025B2

公开(公告)日：2005-03-29

申请号：US09984657

申请日：2001-10-30

申请人： Hideo Wada ,  Isamu Ohkubo ,  Kazuhiro Natsuaki ,  Naoki Fukunaga ,  Shigeki Hayashida

发明人： Hideo Wada ,  Isamu Ohkubo ,  Kazuhiro Natsuaki ,  Naoki Fukunaga ,  Shigeki Hayashida

IPC分类号： H01L27/14 ,  H01L29/40 ,  H01L29/88 ,  H01L31/0216 ,  H01L31/06 ,  H01L31/10

CPC分类号： H01L31/02161

摘要： A photodiode includes a first conductivity type semiconductor substrate or a first conductivity type semiconductor layer; a second conductivity type semiconductor layer provided on the first conductivity type semiconductor substrate or the first conductivity type semiconductor layer; an anti-reflection film provided on a surface of a portion of the second conductivity type semiconductor layer which is in a light receiving area; a first conductive layer provided in an area in the vicinity of the light receiving area; and a passivation layer provided on the first conductive layer. Light incident on the photodiode is detected by a junction of the one of the first conductivity type semiconductor substrate and the first conductivity type semiconductor layer, and the second conductivity type semiconductor layer. The area in the vicinity of the light receiving area includes a window area having an opening in the passivation layer for partially exposing the first conductive layer.

摘要翻译： 光电二极管包括第一导电类型半导体衬底或第一导电类型半导体层; 设置在所述第一导电型半导体基板或所述第一导电型半导体层上的第二导电型半导体层; 设置在所述第二导电型半导体层的位于光接收区域的部分的表面上的防反射膜; 设置在所述光接收区域附近的区域中的第一导电层; 以及设置在第一导电层上的钝化层。 通过第一导电类型半导体衬底和第一导电类型半导体层之一以及第二导电类型半导体层的接合来检测入射在光电二极管上的光。 光接收区域附近的区域包括在钝化层中具有用于部分地暴露第一导电层的开口的窗口区域。

公开(公告)号：US06600174B2

公开(公告)日：2003-07-29

申请号：US09757473

申请日：2001-01-11

申请人： Isamu Ohkubo ,  Kazuhiro Natsuaki ,  Naoki Fukunaga ,  Masaru Kubo

发明人： Isamu Ohkubo ,  Kazuhiro Natsuaki ,  Naoki Fukunaga ,  Masaru Kubo

IPC分类号： H01L3100

CPC分类号： H01L31/02005 ,  H01L23/53223 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L31/02161 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05644 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48644 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/05042 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01S5/0282 ,  H01S5/0425 ,  H01L2924/00014 ,  H01L2924/00

摘要： A corrosion-resistant conductive layer (TiW layer) formed of a corrosion-resistant material is formed to extend from a bonding pad portion to an interconnection portion of a light receiving element. A semiconductor laser device according to the present invention includes the light receiving element.

公开(公告)号：US06433374B1

公开(公告)日：2002-08-13

申请号：US09984298

申请日：2001-10-29

申请人： Naoki Fukunaga ,  Kazuhiro Natsuaki

发明人： Naoki Fukunaga ,  Kazuhiro Natsuaki

IPC分类号： H01L31062

CPC分类号： H01L27/14609 ,  H01L27/14623 ,  H01L27/14698

摘要： A photodiode converts light incident thereon into an electric signal by a junction between an N-type epitaxial layer and a P-type epitaxial layer with a sufficiently small junction capacitance. The photodiode is surrounded by a P+-type buried isolating diffused layer and a P-type isolating diffused layer, and thus is electrically separated from a signal processing circuit including a MOS transistor.

公开(公告)号：US08203846B2

公开(公告)日：2012-06-19

申请号：US12861606

申请日：2010-08-23

申请人： Kazuhiro Natsuaki

发明人： Kazuhiro Natsuaki

IPC分类号： H05K1/18

CPC分类号： G01J1/44 ,  G01J3/02 ,  G01J3/0208 ,  G01J3/0264 ,  G01J3/027 ,  G01J3/0272 ,  G01J3/51 ,  G01J3/513 ,  H01L27/14621 ,  H01L27/14645

摘要： Provided is a semiconductor photodetector element which is reduced in manufacturing cost and improved in precision. The semiconductor photodetector element includes: a first photodiode formed in a P-type silicon substrate; a second photodiode formed in the P-type silicon substrate and has the same structure as that of the first photodiode; a color filter layer formed above the first photodiode from a green filter; a color filter layer formed of a black filter above the second photodiode; and an arithmetic circuit portion which subtracts a detection signal of the second photodiode from a detection signal of the first photodiode.

摘要翻译： 提供一种半导体光电检测元件，其制造成本降低，精度提高。 半导体光检测器元件包括：形成在P型硅衬底中的第一光电二极管; 形成在P型硅衬底中并具有与第一光电二极管相同的结构的第二光电二极管; 从绿色滤光器形成在第一光电二极管的上方的滤色器层; 由第二光电二极管上方的黑色滤光片形成的滤色器层; 以及从第一光电二极管的检测信号中减去第二光电二极管的检测信号的运算电路部分。

公开(公告)号：US20050258501A1

公开(公告)日：2005-11-24

申请号：US10637512

申请日：2003-08-11

申请人： Kazuhiro Natsuaki ,  Toshihiko Fukushima

发明人： Kazuhiro Natsuaki ,  Toshihiko Fukushima

IPC分类号： G11B7/13 ,  H01L27/14 ,  H01L31/10 ,  H01L31/18

CPC分类号： H01L31/103

摘要： A light receiving element includes a substrate; and an epitaxial layer provided on the substrate and containing an impurity diffusion layer extending from a surface of the epitaxial layer to a prescribed depth. The prescribed depth is about 0.3 μm or less. The impurity diffusion layer contains an impurity at a concentration of less than about 1×1020 cm−3.

摘要翻译： 光接收元件包括基板; 以及外延层，其设置在所述基板上，并且含有从所述外延层的表面延伸至规定深度的杂质扩散层。 规定深度为0.3μm以下。 杂质扩散层含有浓度小于约1×10 20 cm -3的杂质。

公开(公告)号：US06846694B2

公开(公告)日：2005-01-25

申请号：US10384774

申请日：2003-03-11

申请人： Toshihiko Fukushima ,  Kazuhiro Natsuaki ,  Takao Setoyama ,  Yuji Asano ,  Morio Katou

发明人： Toshihiko Fukushima ,  Kazuhiro Natsuaki ,  Takao Setoyama ,  Yuji Asano ,  Morio Katou

IPC分类号： H01L27/14 ,  H01L21/00 ,  H01L21/8222 ,  H01L23/58 ,  H01L27/06 ,  H01L27/144 ,  H01L31/00 ,  H01L31/10 ,  H01L31/103 ,  H01L31/109 ,  H01L31/18

CPC分类号： H01L31/1804 ,  H01L27/1443 ,  H01L31/02161 ,  H01L31/103 ,  Y02E10/547 ,  Y02P70/521

摘要： A method for producing a semiconductor device with a built-in light receiving element is provided. The device comprises a light receiving element region for receiving and converting an optical signal to an electric signal, the light receiving element region being provided on a substrate. The method comprises the steps forming an anti-reflection film in the light receiving element region on the substrate, and forming a protection film, the protection film serving as an etch stop film in a subsequent etching step.

摘要翻译： 提供一种具有内置光接收元件的半导体器件的制造方法。 该装置包括用于接收光信号并将其转换为电信号的光接收元件区域，该光接收元件区域设置在基板上。 该方法包括在基板上的光接收元件区域中形成抗反射膜的步骤，以及在随后的蚀刻步骤中形成保护膜，该保护膜用作蚀刻停止膜。

公开(公告)号：US06828644B2

公开(公告)日：2004-12-07

申请号：US10393389

申请日：2003-03-21

申请人： Yuji Asano ,  Morio Katou ,  Takao Setoyama ,  Toshihiko Fukushima ,  Kazuhiro Natsuaki

发明人： Yuji Asano ,  Morio Katou ,  Takao Setoyama ,  Toshihiko Fukushima ,  Kazuhiro Natsuaki

IPC分类号： H01L3106

CPC分类号： H01L31/02024 ,  H01L21/761 ,  H01L21/76202 ,  H01L21/763 ,  H01L27/0203 ,  H01L27/1446

摘要： A first layer is formed on an underlying substrate having a surface layer made of semiconductor of a first conductivity type. The first layer is made of semiconductor having a resistance higher than that of the surface layer. A first impurity diffusion region of a second conductivity type is formed in a partial surface region of the first layer. The first impurity diffusion region does not reach the surface of the underlying substrate. A second impurity diffusion region of the first conductivity type is disposed in the first layer and spaced apart from the first impurity diffusion region. The second impurity diffusion region reaches the surface of the underlying substrate. A separation region is disposed between the first and second impurity diffusion regions. The separation region comprises a trench formed in the first layer and dielectric material disposed at least in a partial internal region of the trench.

摘要翻译： 第一层形成在具有由第一导电类型的半导体制成的表面层的下面的衬底上。 第一层由具有高于表层的电阻的半导体制成。 第一导电类型的第一杂质扩散区形成在第一层的局部表面区域中。 第一杂质扩散区域不到达下面的衬底的表面。 第一导电类型的第二杂质扩散区域设置在第一层中并与第一杂质扩散区间隔开。 第二杂质扩散区域到达下面的衬底的表面。 分离区域设置在第一和第二杂质扩散区之间。 分离区域包括形成在第一层中的沟槽和至少设置在沟槽的部分内部区域中的电介质材料。