摘要:
The invention provides a semiconductor integrated circuit device on which a RAM macro capable of selecting an operation mode adapted to improved ease of use, response, or low power consumption or selecting an input setup value is mounted. In a first operation mode of a RAM macro, a timing of receiving an input signal is set as a first timing. In a second operation mode, a timing of receiving an input signal is set to a second timing later than the first timing. In a semiconductor integrated circuit device including an input circuit for receiving an input signal and a decoder circuit for decoding an output signal of the input circuit, the input circuit is activated on the basis of a first signal and the decoder circuit is activated on the basis of a second signal.
摘要:
To speed up the operation of a decoder circuit, reduce the power consumption of the decoder circuit and increase the cycle, each circuit such as a buffer, a predecoder and a main decoder in the decoder circuit include a semiconductor logic circuit wherein the number of columns of transistors for pulling down an output node is small even if the number of inputs is large, and the true output signal and a complementary output signal having approximately the same delay time are acquired and the output pulse length of each circuit in the decoder circuit is reduced. By virtue of this arrangement, the operation of the decoder circuit can be sped up, the power consumption can be reduced, the cycles can be increased and, in a semiconductor memory, for example, the reduction of access time and power consumption and the increase of the cycles are enabled.
摘要:
A clocked logic gate circuit is constituted so that a switch unit is constituted by a logic block and a reference MOS transistor, the source of the reference MOS transistor is connected to one output of the logic block, the gate of the reference MOS transistor is connected to the other output of the logic block, and MOS transistors (input transistors) constituting the logic block are connected in parallel. With this arrangement, complementary inputs are not required and a driving MOS transistor and an input transistor (or a driving MOS transistor and a reference MOS transistor) can be connected in series. As a result, a circuit is obtained which is simpler than the double rail logic in constitution is facilitated and can be operated at a higher speed than a CMOS logic circuit and a path transistor logic circuit.
摘要:
A circuit technique suitable to attain a high speed of a memory which is constructed in a manner such that memory cells include a field effect transistor and peripheral circuits include a bipolar transistor and a field effect transistor. According to the invention, a bipolar transistor whose collector is connected to a differential amplifier and which supplies a current to the differential amplifier in accordance with a signal which is inputted to a base or an emitter is added, and a bipolar transistor to supply a current only when writing to bit lines is connected. According to the invention, a high speed of the access time when information is read out by switching the selection bit line is accomplished. Further, the charge/discharge time of the bit line when information is written is reduced and a high speed of the writing time can be also accomplished. The improvement of the drivers of word lines and bit lines is also disclosed and a semiconductor memory which can operate at a high speed as a whole semiconductor memory can be realized.
摘要:
A semiconductor integrated circuit is provided in which the timing margin for fetching data is prevented from being reduced even in the case where the duty ratio of a clock signal is different from 50%. The semiconductor integrated circuit includes: a clock input terminal for receiving a clock signal; a data input terminal for receiving a data signal; internal clock generating circuits for generating an internal clock signal which is switched at an intermediate timing between the i-th (i: an integer of 1 or larger) switch timing and the (i+1)th switch timing of the clock signal; and a latch circuit for latching the data signal synchronously with the internal clock signal. An internal clock signal which is switched at an intermediate timing between the i-th switch timing and the (i+1)th switch timing of the clock signal is generated, and the data signal is fetched synchronously with the internal clock signal.
摘要:
Disclosed herewith is a semiconductor device improved to prevent withstand voltage defects that might occur in each MOSFET used therein and a system to be designed easily and prevented from withstand voltage defects that might occur in each semiconductor used therein. The system includes the first and second input circuits, each being constituted by MOSFETs manufactured in the same process. The first input circuit receives a voltage of a first signal inputted from a first external terminal and divided by first and second resistor means while the AC component of the input signal is transmitted to the input circuit through a capacitor disposed in parallel to the first resistor means. The second input circuit receives a second input signal inputted from a second external terminal and reduced in signal amplitude so as to become smaller than that of the first input signal. The system also includes a second semiconductor device corresponding to the first input circuit and a third semiconductor device corresponding to the second input circuit.
摘要:
To speed up the operation of a decoder circuit, reduce the power consumption of the decoder circuit and increase the cycle, each circuit such as a buffer, a predecoder and a main decoder in the decoder circuit includes a semiconductor logic circuit in which the number of columns of transistors for pulling down at an output node is small, even if the number of inputs is many and the true and a complementary output signal having approximately the same delay time are acquired and the output pulse length of each circuit in the decoder circuit is reduced. With this arrangement, the operation of the decoder circuit can be sped up, the power consumption can be reduced, the cycles can be increased and, in a semiconductor memory, for example, access time and power consumption can be reduced and the cycles can be increased.
摘要:
It is an object of the invention to provide a circuit configuration wherein a decoder control signal Φ2 is rendered unnecessary between an address buffer control signal Φ1 and the decoder control signal Φ2, thereby implementing speed-up in operation of a decoder circuit. The object is attained by adoption of a configuration wherein a buffer is integrated with a decoder, so that an output current path of transistors making up the address buffer, and that of transistors making up the decoder are connected with each other in series, thereby forming an output current path of decoder output. With the invention, speed-up in operation, lower power consumption, and higher cycle, of decoder circuits, can be achieved. Further, in the case of using the decoder circuits in a semiconductor memory, it is possible to achieve shortening of access time, lower power consumption, and higher cycle with reference to the semiconductor memory.
摘要:
A high-speed, reduced power consumption address decoder circuit, wherein a decoder control signal Φ2 is rendered unnecessary between an address buffer control signalΦ1 and the decoder control signal Φ2, thereby implementing speed-up in operation of a decoder circuit. Improved speed and reduced power consumption are attained by a configuration wherein a buffer is integrated with a decoder, so that an output current path of transistors making up the address buffer, and that of transistors making up the decoder are connected with each other in series, thereby forming an output current path of decoder output. With the invention, speed-up in operation, lower power consumption, and higher cycle, of decoder circuits, can be achieved. Further, in the case of using the decoder circuits in a semiconductor memory, it is possible to achieve shortening of access time, lower power consumption, and higher cycle with reference to the semiconductor memory.
摘要:
A transmission circuit for transmitting a data signal between circuit units through a signal wire. The data signal is transmitted for precharging the signal wire to high potential during a precharge period and discharging it to low potential according to data transmitted during an evaluation period or keeping the signal wire as it is. Latch type Source-Coupled-Logic is configured so that a first node and a second node used as an output terminal to the next stage are respectively charged together to high potential during the precharge period. The second node is discharged according to a potential at the first node during the evaluation period, and the first node is discharged according to a potential on the signal wire. Thus, the operation of discharging the signal wire by the driver circuit can be sped up.