公开(公告)号：US5861462A

公开(公告)日：1999-01-19

申请号：US953667

申请日：1992-09-30

申请人： Keita Sasaki ,  Masatoshi Shinomori

发明人： Keita Sasaki ,  Masatoshi Shinomori

IPC分类号： C08J5/04 ,  C08L23/10 ,  C08L55/02 ,  C08L67/02 ,  C08L69/00 ,  C08L71/12 ,  C08L77/00 ,  C08L101/00 ,  C09K19/54 ,  C08L67/00 ,  C08L77/12

CPC分类号： C08J5/046 ,  C08J7/047 ,  C08L101/00 ,  C08L23/10 ,  C08L55/02 ,  C08L67/02 ,  C08L69/00 ,  C08L71/123 ,  C08L77/00 ,  C09K19/544 ,  C08J2323/10 ,  C08J2355/02 ,  C08J2369/00 ,  C08J2377/00 ,  C08L2205/03 ,  C08L2205/12 ,  C08L67/00 ,  C08L71/12 ,  Y10S525/935

摘要： The present invention relates to a method for forming the LCP composite having LCP fibers dispersed in the matrix resin even if the LCP content may be smaller than the lower limit of the fiber formable range.The method is characterized in that a resin composite reinforced by the LCP fiber in a mixture ratio beyond the fiber formable range or the preferred fiber formable range by means of an extrusion or injection molding of a resin mixture containing a liquid crystal resin composite extruded in the fiber formable range or the preferred fiber formable range.

摘要翻译： 本发明涉及一种形成具有分散在基质树脂中的LCP纤维的LCP复合物的方法，即使LCP含量可能小于纤维可成形范围的下限。 该方法的特征在于，通过挤出或注塑成型含有液晶树脂复合材料的树脂混合物，将由LCP纤维增强的树脂复合比例超过可纤维成形范围或优选的纤维成形范围 纤维可成形范围或优选纤维可成形范围。

公开(公告)号：US5632945A

公开(公告)日：1997-05-27

申请号：US400386

申请日：1995-03-03

申请人： Keita Sasaki ,  Masao Hara ,  Takashi Tomita ,  Masatoshi Shinomori

发明人： Keita Sasaki ,  Masao Hara ,  Takashi Tomita ,  Masatoshi Shinomori

IPC分类号： B29B13/02 ,  B29B13/10 ,  B29B17/00 ,  B29B17/04 ,  B29C39/02 ,  B29C47/00 ,  B29C70/06 ,  C08L77/00 ,  C08L77/02 ,  C08L77/06

CPC分类号： B29B17/0412 ,  B29B13/022 ,  B29B13/023 ,  B29B13/10 ,  B29B17/0026 ,  B29C39/02 ,  B29C47/0004 ,  B29C70/06 ,  C08L77/00 ,  C08L77/02 ,  C08L77/06 ,  B29C2793/009 ,  B29C47/00 ,  B29C47/0019 ,  B29K2105/0079 ,  B29K2105/0088 ,  B29K2105/06 ,  B29K2105/255 ,  B29K2995/005 ,  B29K2995/0077 ,  Y02W30/62 ,  Y02W30/625

摘要： A method for remanufacturing a composite resin having high tensile strength and high rigidity into a remanufactured molded product having the same tensile strength and rigidity which includes the steps of: providing a molded product of a composite resin of thermoplastic resin and liquid crystal polymer having a crystal transition point higher than a minimum moldable temperature of the thermoplastic resin; crushing the composite resin into particles or pieces; heating the particles or pieces at a temperature higher than the transition temperature of the liquid crystal polymer to obtain a molten composite resin by using an injection forming apparatus; extruding the molten composite resin at a temperature higher than the transition temperature of the liquid crystal polymer to obtain a moldable composite material of a sheet or strand form; and forming the moldable composite material into a molded product in a given shape at a temperature lower than the transition temperature of the liquid crystal polymer.

摘要翻译： 一种将具有高拉伸强度和高刚性的复合树脂再制造成具有相同拉伸强度和刚性的再制造模制品的方法，包括以下步骤：提供热塑性树脂的复合树脂和具有晶体的液晶聚合物的模制产品 过渡点高于热塑性树脂的最低成型温度; 将复合树脂粉碎成颗粒或碎片; 在高于液晶聚合物的转变温度的温度下加热所述颗粒，通过使用注射成型装置获得熔融的复合树脂; 在高于液晶聚合物的转变温度的温度下挤出熔融的复合树脂以获得片状或绞合形式的可成型复合材料; 在低于液晶聚合物的转变温度的温度下将成型的复合材料成形为具有规定形状的成型品。

公开(公告)号：US08304848B2

公开(公告)日：2012-11-06

申请号：US12883732

申请日：2010-09-16

申请人： Kazuhiro Suzuki ,  Ikuo Fujiwara ,  Keita Sasaki ,  Honam Kwon ,  Hitoshi Yagi ,  Hiroto Honda ,  Koichi Ishii ,  Masako Ogata ,  Risako Ueno ,  Hideyuki Funaki

发明人： Kazuhiro Suzuki ,  Ikuo Fujiwara ,  Keita Sasaki ,  Honam Kwon ,  Hitoshi Yagi ,  Hiroto Honda ,  Koichi Ishii ,  Masako Ogata ,  Risako Ueno ,  Hideyuki Funaki

IPC分类号： H01L31/00 ,  H01L31/04

CPC分类号： G01J5/02 ,  G01J5/023 ,  G01J5/024 ,  H04N5/33

摘要： Certain embodiments provide an infrared imaging device including: an SOI structure that is placed at a distance from a substrate, and includes: heat-sensitive diodes that detect infrared rays and convert the infrared rays into heat; and STI regions that separate the heat-sensitive diodes from one another; an interlayer insulating film that is stacked on the SOI structure; and supporting legs that are connected to the heat-sensitive diodes and vertical signal lines provided in outer peripheral regions of the heat-sensitive diodes. Each of the supporting legs includes: an interconnect unit that transmit signals to the vertical signal lines; and interlayer insulating layers that sandwich the interconnect unit, each bottom side of the interlayer insulating layers being located in a higher position than the SOI structure.

摘要翻译： 某些实施例提供了一种红外成像装置，包括：SOI结构，其被放置在离基板一定距离处，并且包括：热敏二极管，其检测红外线并将红外线转换成热; 以及将热敏二极管彼此分离的STI区域; 堆叠在SOI结构上的层间绝缘膜; 以及连接到热敏二极管的支撑腿和设置在热敏二极管的外周区域中的垂直信号线。 每个支撑腿包括：将信号传输到垂直信号线的互连单元; 以及层叠绝缘层，夹着所述互连单元，所述层间绝缘层的每个底侧位于比所述SOI结构更高的位置。

公开(公告)号：US08067740B2

公开(公告)日：2011-11-29

申请号：US12508846

申请日：2009-07-24

申请人： Keita Sasaki ,  Hideyuki Funaki ,  Hiroto Honda ,  Ikuo Fujiwara ,  Koichi Ishii ,  Hitoshi Yagi

发明人： Keita Sasaki ,  Hideyuki Funaki ,  Hiroto Honda ,  Ikuo Fujiwara ,  Koichi Ishii ,  Hitoshi Yagi

IPC分类号： H01L31/02

CPC分类号： H01L27/14669 ,  H01L27/1203 ,  H01L27/14683

摘要： An image sensor includes a semiconductor substrate; first pixels laid out above cavities provided within the semiconductor substrate, the first pixels converting thermal energy generated by incident light into an electric signal; supporting parts connected between the first pixels and the semiconductor substrate, the supporting parts supporting the first pixels above the cavities; and second pixels fixedly provided on the semiconductor substrate without via the cavities, wherein a plurality of the first pixels and a plurality of the second pixels are laid out two-dimensionally to form a pixel region, and each of the second pixels is adjacent to the first pixels.

摘要翻译： 图像传感器包括半导体衬底; 第一像素被布置在设置在半导体衬底内的腔上方，第一像素将由入射光产生的热能转换为电信号; 连接在第一像素和半导体衬底之间的支撑部件，支撑部件支撑空腔上方的第一像素; 以及固定地设置在半导体衬底上的第二像素，而不经由空腔，其中多个第一像素和多个第二像素被二维布置以形成像素区域，并且每个第二像素与 第一个像素。

公开(公告)号：US08749010B2

公开(公告)日：2014-06-10

申请号：US13426097

申请日：2012-03-21

申请人： Ikuo Fujiwara ,  Hitoshi Yagi ,  Keita Sasaki

发明人： Ikuo Fujiwara ,  Hitoshi Yagi ,  Keita Sasaki

IPC分类号： H01L27/146 ,  H01L31/058

CPC分类号： H04N5/33 ,  G01J5/024 ,  G01J5/10

摘要： According to one embodiment, an infrared imaging device includes a substrate, a detecting section, an interconnection, a contact plug and a support beam. The detecting section is provided above the substrate and includes an infrared absorbing section and a thermoelectric converting section. The interconnection is provided on an interconnection region of the substrate and is configured to read the electrical signal. The contact plug is extends from the interconnection toward a connecting layer provided in the interconnection region. The contact plug is electrically connected to the interconnection and the connecting layer. The support beam includes a support beam interconnection and supports the detecting section above the substrate. The support beam interconnection transmits the electrical signal from the thermoelectric converting section to the interconnection.

摘要翻译： 根据一个实施例，红外成像装置包括基板，检测部分，互连件，接触插塞和支撑梁。 检测部设置在基板的上方，并且包括红外线吸收部和热电转换部。 互连设置在基板的互连区域上，并被配置为读取电信号。 接触插头从互连延伸到设置在互连区域中的连接层。 接触插头电连接到互连和连接层。 支撑梁包括支撑梁互连并且支撑基板上方的检测部分。 支撑束互连将电信号从热电转换部传送到互连。

公开(公告)号：US08629396B2

公开(公告)日：2014-01-14

申请号：US13235388

申请日：2011-09-18

申请人： Masako Ogata ,  Ikuo Fujiwara ,  Hiroto Honda ,  Kazuhiro Suzuki ,  Honam Kwon ,  Risako Ueno ,  Hitoshi Yagi ,  Masaki Atsuta ,  Koichi Ishii ,  Keita Sasaki ,  Hideyuki Funaki

发明人： Masako Ogata ,  Ikuo Fujiwara ,  Hiroto Honda ,  Kazuhiro Suzuki ,  Honam Kwon ,  Risako Ueno ,  Hitoshi Yagi ,  Masaki Atsuta ,  Koichi Ishii ,  Keita Sasaki ,  Hideyuki Funaki

IPC分类号： H01L27/146

CPC分类号： H01L27/14649 ,  H01L27/14632 ,  H01L27/14687

摘要： An uncooled infrared imaging element includes a pixel region, a device region, and a support substrate. The pixel region includes heat-sensitive pixels. The heat-sensitive pixels are arranged in a matrix and change current-voltage characteristics thereof in accordance with receiving amounts of infrared. The device region includes at least one of a drive circuit and a readout circuit which includes a MOS transistor. The drive circuit drives the heat-sensitive pixels. The readout circuit detects signals of the heat-sensitive pixels. The support substrate is provided with a cavity region to be under pixel region and the MOS transistor.

摘要翻译： 非制冷红外成像元件包括像素区域，器件区域和支撑衬底。 像素区域包括热敏像素。 热敏像素被布置成矩阵并且根据接收到的红外线量来改变其电流 - 电压特性。 器件区域包括驱动电路和包括MOS晶体管的读出电路中的至少一个。 驱动电路驱动热敏像素。 读出电路检测热敏像素的信号。 支撑基板设置有在像素区域下方的空腔区域和MOS晶体管。

公开(公告)号：US20120061791A1

公开(公告)日：2012-03-15

申请号：US13069610

申请日：2011-03-23

申请人： Masaki Atsuta ,  Hideyuki Funaki ,  Keita Sasaki

发明人： Masaki Atsuta ,  Hideyuki Funaki ,  Keita Sasaki

IPC分类号： H01L29/66

CPC分类号： G01J5/10 ,  G01J5/02 ,  G01J5/0225 ,  G01J5/023 ,  G01J5/024 ,  G01J5/08 ,  G01J5/0853 ,  G01J5/20

摘要： According to one embodiment, an infrared detection device includes a detection element. The detection element includes a semiconductor substrate, a signal interconnect section, a detection cell and a support section. The semiconductor substrate is provided with a cavity on a surface of the semiconductor substrate. The signal interconnect section is provided in a region surrounding the cavity of the semiconductor substrate. The detection cell spaced from the semiconductor substrate above the cavity includes a thermoelectric conversion layer, and an absorption layer. The absorption layer is laminated with the thermoelectric conversion layer, and provided with a plurality of holes each having a shape whose upper portion is widened. The support section holds the detection cell above the cavity and connects the signal interconnect section and the detection cell.

摘要翻译： 根据一个实施例，红外检测装置包括检测元件。 检测元件包括半导体衬底，信号互连部分，检测单元和支撑部分。 半导体衬底在半导体衬底的表面上设置有空腔。 信号互连部分设置在围绕半导体衬底的空腔的区域中。 与空腔上方的半导体衬底间隔开的检测单元包括热电转换层和吸收层。 吸收层与热电转换层层叠，并且设置有多个孔，每个孔具有上部加宽的形状。 支撑部分将检测单元保持在空腔上方并连接信号互连部分和检测单元。

公开(公告)号：US20120007205A1

公开(公告)日：2012-01-12

申请号：US12883732

申请日：2010-09-16

申请人： Kazuhiro Suzuki ,  Ikuo Fujiwara ,  Keita Sasaki ,  Honam Kwon ,  Hitoshi Yagi ,  Hiroto Honda ,  Koichi Ishii ,  Masako Ogata ,  Risako Ueno ,  Hideyuki Funaki

发明人： Kazuhiro Suzuki ,  Ikuo Fujiwara ,  Keita Sasaki ,  Honam Kwon ,  Hitoshi Yagi ,  Hiroto Honda ,  Koichi Ishii ,  Masako Ogata ,  Risako Ueno ,  Hideyuki Funaki

IPC分类号： H01L31/101 ,  H01L31/18

CPC分类号： G01J5/02 ,  G01J5/023 ,  G01J5/024 ,  H04N5/33

摘要： Certain embodiments provide an infrared imaging device including: an SOI structure that is placed at a distance from a substrate, and includes: heat-sensitive diodes that detect infrared rays and convert the infrared rays into heat; and STI regions that separate the heat-sensitive diodes from one another; an interlayer insulating film that is stacked on the SOI structure; and supporting legs that are connected to the heat-sensitive diodes and vertical signal lines provided in outer peripheral regions of the heat-sensitive diodes. Each of the supporting legs includes: an interconnect unit that transmit signals to the vertical signal lines; and interlayer insulating layers that sandwich the interconnect unit, each bottom side of the interlayer insulating layers being located in a higher position than the SOI structure.

摘要翻译： 某些实施例提供了一种红外成像装置，包括：SOI结构，其被放置在离基板一定距离处，并且包括：热敏二极管，其检测红外线并将红外线转换成热; 以及将热敏二极管彼此分离的STI区域; 堆叠在SOI结构上的层间绝缘膜; 以及连接到热敏二极管的支撑腿和设置在热敏二极管的外周区域中的垂直信号线。 每个支撑腿包括：将信号传输到垂直信号线的互连单元; 以及层叠绝缘层，夹着所述互连单元，所述层间绝缘层的每个底侧位于比所述SOI结构更高的位置。

公开(公告)号：US5626703A

公开(公告)日：1997-05-06

申请号：US4901

申请日：1993-01-21

申请人： Takashi Tomita ,  Masakatsu Ohsugi ,  Yushi Matsuda ,  Mitsuharu Kaneko ,  Keita Sasaki ,  Kazuhisa Toh ,  Masayasu Nishihara ,  Kenji Moriwaki

发明人： Takashi Tomita ,  Masakatsu Ohsugi ,  Yushi Matsuda ,  Mitsuharu Kaneko ,  Keita Sasaki ,  Kazuhisa Toh ,  Masayasu Nishihara ,  Kenji Moriwaki

IPC分类号： B29C43/24 ,  B29C47/00 ,  B29C47/06 ,  B29C47/30 ,  B29C53/34 ,  B29C55/00 ,  B29C65/00 ,  B29C67/00 ,  B29C69/00 ,  B29C69/02 ,  B29C70/04 ,  B29C70/06 ,  B29C70/20

CPC分类号： B29C47/065 ,  B29C47/0004 ,  B29C47/0019 ,  B29C47/0021 ,  B29C47/0038 ,  B29C47/0047 ,  B29C47/0066 ,  B29C47/30 ,  B29C53/34 ,  B29C55/00 ,  B29C65/02 ,  B29C66/43 ,  B29C66/431 ,  B29C66/45 ,  B29C66/83413 ,  B29C66/91411 ,  B29C66/91421 ,  B29C66/91431 ,  B29C66/91645 ,  B29C67/0044 ,  B29C70/04 ,  B29C70/06 ,  B29C70/202 ,  B32B38/1816 ,  B29C2793/0027 ,  B29C43/24 ,  B29C47/0014 ,  B29C47/0016 ,  B29C47/0059 ,  B29C47/02 ,  B29K2101/12 ,  B29K2105/0079 ,  B29K2105/08 ,  B29L2007/002 ,  B29L2031/06

摘要： The present invention relates to a method for preparing a composite material comprising a matrix resin of a thermal plastic resin and a liquid crystal resin which has a liquid crystal transition temperature higher than the minimum temperature of capable of molding said thermal plastic resin and which is formed into a fiber structure as a reinforcing material.The method is characterized in that the composite composition is subjected to a melt extrusion process at an apparent shear rate of 3.times.10.sup.2 to 10.sup.5 sec.sup.-1 and above the liquid crystal transition temperature. The resulting material in a filament or thin film has fibers of the liquid crystal resin having an aspect of more than 3 in the matrix resin, so that it is provided with an improved tensile strength by further being subjected to a drawing process at a drawing ratio of 11 to 120. As the composite materials have too small diameter or thickness to be molded in a desired product, they are preferably further subjected to a gathering process, a folding process or a laminating process in which a plurality of strand or film materials are welded to each other at the surface thereof and formed into a strand or sheet form capable of molding.

摘要翻译： 本发明涉及一种制备复合材料的方法，该复合材料包括热塑性树脂的基体树脂和液晶树脂，液晶树脂的液晶转变温度高于能够模制所述热塑性树脂的最低温度并形成 作为增强材料的纤维结构。 该方法的特征在于，复合组合物在3×102〜105秒-1的表观剪切速率和高于液晶转变温度下进行熔融挤出加工。 长丝或薄膜中的所得材料在基质树脂中具有一个方面大于3的液晶树脂的纤维，从而通过进一步以拉伸比进行拉伸加工来提供拉伸强度的提高 由于复合材料的直径或厚度太小而不能模制成所需的产品，因此优选进一步进行聚集过程，折叠过程或层压过程，其中多个线材或薄膜材料是 在其表面彼此焊接并形成能够模制的线或片形式。

公开(公告)号：US20130248714A1

公开(公告)日：2013-09-26

申请号：US13728009

申请日：2012-12-27

申请人： Hiroto Honda ,  Kazuhiro Suzuki ,  Hideyuki Funaki ,  Masaki Atsuta ,  Keita Sasaki ,  Koichi Ishii ,  Honam Kwon

发明人： Hiroto Honda ,  Kazuhiro Suzuki ,  Hideyuki Funaki ,  Masaki Atsuta ,  Keita Sasaki ,  Koichi Ishii ,  Honam Kwon

IPC分类号： H01L27/146 ,  G01J5/20

CPC分类号： G01J5/12 ,  G01J5/023 ,  G01J5/20 ,  G01J5/22 ,  G01J2005/0077 ,  H01L27/14649 ,  H04N5/33

摘要： An uncooled infrared imaging device according to an embodiment includes: reference pixels formed on a semiconductor substrate and arranged in at least one row; and infrared detection pixels arranged in the remaining rows and detecting incident infrared rays. Each of the reference pixels includes a first cell located above a first concave portion. The first cell includes a first thermoelectric conversion unit having a first infrared absorption film; and a first thermoelectric conversion element. Each of the infrared detection pixels includes a second cell located above a second concave portion, and having a larger area than the first cell. The second cell includes: a second thermoelectric converting unit located above the second concave portion; and first and second supporting structure units supporting the second thermoelectric converting unit above the second concave portion. The second thermoelectric converting unit includes: a second infrared absorption film; and a second thermoelectric conversion element.

摘要翻译： 根据实施例的非冷却红外成像装置包括：形成在半导体衬底上并布置在至少一行中的参考像素; 以及布置在其余行中的红外检测像素，并检测入射的红外线。 每个参考像素包括位于第一凹部上方的第一单元。 第一电池包括具有第一红外线吸收膜的第一热电转换单元; 和第一热电转换元件。 每个红外检测像素包括位于第二凹部上方的第二单元，并且具有比第一单元更大的面积。 第二单元包括：位于第二凹部上方的第二热电转换单元; 以及第一和第二支撑结构单元，其在第二凹部上方支撑第二热电转换单元。 第二热电转换单元包括：第二红外线吸收膜; 和第二热电转换元件。