公开(公告)号：US08362723B2

公开(公告)日：2013-01-29

申请号：US12739546

申请日：2008-10-23

申请人： Makoto Kuwamura

发明人： Makoto Kuwamura

IPC分类号： H02P6/16 ,  H02P7/00 ,  H02P27/00 ,  H02K37/00

CPC分类号： H02P6/085 ,  H02P6/14 ,  H02P27/08

摘要： The motor drive circuit 100 supplies a drive current to the motor 2 to drive the motor. Each of the first Hall amplifier HAMP1 to the third Hall amplifier HAMP3 is provided for each phase of the motor 2 and receives a pair of Hall signals from a corresponding phase Hall element to generate each phase sine wave voltage SIN_U, SIN_V and SIN_W by amplifying a difference between the pair of Hall signals. Each of the first PWM comparator PCMP1 to the third PWM comparator PCMP3 is provided for each phase of the motor 2 and compares the corresponding phase sine wave voltage SIN_U, SIN_V and SIN_W, with the periodic voltage Vosc to generate each phase PWM signal PWM_U, PWM_V and PWM_W. The drive unit 10 subjects a phase coil, a target to be driven, to pulse drive by using the pulse modulated signal from the corresponding PWM comparator.

摘要翻译： 马达驱动电路100向马达2提供驱动电流以驱动马达。 第一霍尔放大器HAMP1至第三霍尔放大器HAMP3中的每一个为电动机2的每个相位提供，并且从相应的相位霍尔元件接收一对霍尔信号，以通过放大一个相位的正弦波电压SIN_U，SIN_V和SIN_W来产生 一对霍尔信号之间的差异。 为电动机2的各相提供第一PWM比较器PCMP1〜第三PWM比较器PCMP3，将相应的正弦波电压SIN_U，SIN_V，SIN_W与周期性电压Vosc进行比较，生成各相PWM信号PWM_U，PWM_V 和PWM_W。 驱动单元10通过使用来自相应的PWM比较器的脉冲调制信号使相位线圈（即驱动对象）进行脉冲驱动。

公开(公告)号：US08084971B2

公开(公告)日：2011-12-27

申请号：US12090910

申请日：2006-10-19

申请人： Makoto Kuwamura

发明人： Makoto Kuwamura

IPC分类号： H03K5/00

CPC分类号： H02P6/182

摘要： An energization signal generating circuit respectively compares back electromotive forces generated in coils of each phase of a motor with a midpoint voltage of each phase, and generates energization signals. A pulse signal generating circuit generates a pulse signal in which duty ratio is controlled according to torque. A ramp signal generating circuit divides, into a plurality of times, a period of a frequency generation signal obtained by synthesizing the energization signals, and, for each divided time unit, generates a ramp signal in which pulse width gradually changes, and which has a frequency the same as the pulse signal. An output circuit supplies a drive current to the coils of each phase, based on the energization signals, the pulse signal, and the ramp signal.

摘要翻译： 通电信号发生电路分别将电机各相的线圈中产生的反电动势与各相的中点电压进行比较，并产生通电信号。 脉冲信号发生电路产生根据转矩来控制占空比的脉冲信号。 斜坡信号发生电路将通过合成通电信号而获得的频率产生信号的周期分割成多个，并且对于每个划分的时间单位，生成脉冲宽度逐渐变化的斜坡信号，并且具有 频率与脉冲信号相同。 输出电路基于通电信号，脉冲信号和斜坡信号，向各相的线圈提供驱动电流。

公开(公告)号：US20090121665A1

公开(公告)日：2009-05-14

申请号：US12090910

申请日：2006-10-19

申请人： Makoto Kuwamura

发明人： Makoto Kuwamura

IPC分类号： H02P6/10

CPC分类号： H02P6/182

摘要： An energization signal generating circuit respectively compares back electromotive forces generated in coils of each phase of a motor with a midpoint voltage of each phase, and generates energization signals. A pulse signal generating circuit generates a pulse signal in which duty ratio is controlled according to torque. A ramp signal generating circuit divides, into a plurality of times, a period of a frequency generation signal obtained by synthesizing the energization signals, and, for each divided time unit, generates a ramp signal in which pulse width gradually changes, and which has a frequency the same as the pulse signal. An output circuit supplies a drive current to the coils of each phase, based on the energization signals, the pulse signal, and the ramp signal.

摘要翻译： 通电信号发生电路分别将电机各相的线圈中产生的反电动势与各相的中点电压进行比较，并产生通电信号。 脉冲信号发生电路产生根据转矩来控制占空比的脉冲信号。 斜坡信号发生电路将通过合成通电信号而获得的频率产生信号的周期分割成多个，并且对于每个划分的时间单位，生成脉冲宽度逐渐变化的斜坡信号，并且具有 频率与脉冲信号相同。 输出电路基于通电信号，脉冲信号和斜坡信号，向各相的线圈提供驱动电流。

公开(公告)号：US06200830B1

公开(公告)日：2001-03-13

申请号：US09332949

申请日：1999-06-15

申请人： Satoshi Ito ,  Makoto Kuwamura ,  Masaki Mizutani ,  Hiroshi Noro

发明人： Satoshi Ito ,  Makoto Kuwamura ,  Masaki Mizutani ,  Hiroshi Noro

IPC分类号： H01L2144

CPC分类号： H01L21/563 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/83192 ,  H01L2224/83856 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01051 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/04953 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/3512

摘要： Described is a process for the fabrication of a semiconductor device, which comprises a step of simultaneously or successively mounting at least one semiconductor element having a connecting electrode portion onto each of both sides of an interconnection circuit substrate through an encapsulating resin layer and a step of connecting said at least one semiconductor element with an interconnection electrode on each of both sides of said interconnection circuit substrate by making use of the adhesive force of said encapsulating resin layer.

摘要翻译： 描述了一种用于制造半导体器件的方法，该方法包括通过封装树脂层同时或连续地将至少一个具有连接电极部分的半导体元件安装在互连电路基板的两侧上的步骤，以及步骤 通过利用所述封装树脂层的粘合力，将所述至少一个半导体元件与所述互连电路基板两侧的互连电极连接。

公开(公告)号：US06333206B1

公开(公告)日：2001-12-25

申请号：US09297980

申请日：1999-05-12

申请人： Satoshi Ito ,  Masaki Mizutani ,  Hiroshi Noro ,  Shinichiro Sudo ,  Takashi Fukushima ,  Makoto Kuwamura

发明人： Satoshi Ito ,  Masaki Mizutani ,  Hiroshi Noro ,  Shinichiro Sudo ,  Takashi Fukushima ,  Makoto Kuwamura

IPC分类号： H01L2144

CPC分类号： H01L24/29 ,  C08L63/00 ,  H01L21/563 ,  H01L23/293 ,  H01L24/75 ,  H01L24/83 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/29011 ,  H01L2224/29036 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/73103 ,  H01L2224/73104 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/75 ,  H01L2224/75252 ,  H01L2224/75301 ,  H01L2224/81193 ,  H01L2224/83101 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  C08L2666/02 ,  C08L61/04 ,  C08L2666/08 ,  H01L2924/00014 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/014

摘要： The present invention provides a process for the production of a semiconductor device comprising a semiconductor element provided on a printed circuit board with a plurality of connecting electrode portions provided interposed therebetween, the gap between said printed circuit board and said semiconductor element being sealed with an underfill resin layer. In accordance with the present invention, (1) the underfill resin layer is formed by melting a lamellar solid resin provided interposed between said printed circuit board and said semiconductor element, and (2) the lamellar solid resin provided interposed between said printed circuit board and said semiconductor element is heated for a predetermined period of time until the temperature of the solid resin layer reaches a predetermined range where the two components are connected to each other under pressure under the following conditions (X) and (Y): (X) Supposing that the initial residual heat of reaction of the solid resin before heating is 100% as determined by a differential scanning calorimeter (DSC), the residual heat of reaction thereof is not more than 70% of the initial residual heat of reaction; and (Y) The temperature of the semiconductor element is predetermined higher than that of the printed circuit board, and the difference in temperature between them is not less than 50° C. In this manner, a production process which facilitates the resin sealing of the gap between the semiconductor element and the board and thus can inhibit warpage of the entire semiconductor device and a semiconductor device having an excellent reliability can be provided. In the present invention, the use of a sheet-like underfill material which gives an underfill resin layer having an elastic modulus in tension at 25° C. of from 300 to 15,000 MPa when hardened can provide a semiconductor device which exerts an excellent effect of relaxing the stress on the semiconductor element, printed circuit board and connecting electrode portions and thus exhibits a high reliability.

公开(公告)号：US5565709A

公开(公告)日：1996-10-15

申请号：US551941

申请日：1995-11-02

申请人： Takashi Fukushima ,  Satoshi Ito ,  Makoto Kuwamura ,  Shinya Akizuki ,  Kazuhiro Ikemura ,  Shinichiro Sudo

发明人： Takashi Fukushima ,  Satoshi Ito ,  Makoto Kuwamura ,  Shinya Akizuki ,  Kazuhiro Ikemura ,  Shinichiro Sudo

IPC分类号： H01L23/31 ,  H01L23/433 ,  H01L23/28 ,  H01L23/29

CPC分类号： H01L23/4334 ,  H01L23/3107 ,  H01L23/3128 ,  H01L2224/451 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01039 ,  H01L2924/181

摘要： A semiconductor device comprising a semiconductor element encapsulated with a cured resin having at least two secondary differential peaks of linear thermal expansion by a thermomechanical analytical measurement, the interval between the peaks being at least 20.degree. C. The semiconductor device encapsulated with the cured resin does not cause a warp and is excellent in the TCT test characteristics and the cracking resistance.

摘要翻译： 一种半导体器件，包括用固化树脂封装的半导体元件，所述固化树脂通过热机械分析测量具有至少两个线性热膨胀的二次微分峰，峰之间的间隔至少为20℃。用固化树脂封装的半导体器件 不引起翘曲，TCT试验特性和耐龟裂性优异。

公开(公告)号：US07855523B2

公开(公告)日：2010-12-21

申请号：US11917918

申请日：2006-06-19

申请人： Makoto Kuwamura

发明人： Makoto Kuwamura

IPC分类号： H02P6/18

CPC分类号： H02P6/182 ,  G11B19/28

摘要： A back electromotive detection comparator compares back electromotive voltages Vu to Vw with a common voltage Vn of coils, and generates first rectangular wave signals Pu to Pw. A masking circuit performs masking of the first rectangular wave signals Pu to Pw, and outputs the resultant signals as second rectangular wave signals Mu to Mw. An output circuit supplies a drive current to coils on the basis of the second rectangular wave signals Mu to Mw. A frequency generating circuit generates a frequency generation signal SigFG whose level switches at every edge of the second rectangular wave signals Mu to Mw. A mask signal generating circuit generates a mask signal MSK which is at a high level during an interval multiplied by a coefficient to a pulse width Tp of the frequency generation signal SigFG after level transition of the frequency generation signal SigFG. The masking circuit nullifies level fluctuation of the first rectangular wave signals Pu to Pw during an interval when a mask signal MSK is at the high level.

摘要翻译： 反电动势检测比较器将反向电动势Vu至Vw与线圈的公共电压Vn进行比较，并产生第一矩形波信号Pu至Pw。 掩蔽电路对第一矩形波信号Pu至Pw执行掩蔽，并将所得信号作为第二矩形波信号Mu输出至Mw。 输出电路基于第二矩形波信号Mu至Mw向线圈提供驱动电流。 频率发生电路产生频率产生信号SigFG，其电平在第二矩形波信号Mu的每个边缘切换到Mw。 掩模信号发生电路产生在频率产生信号SigFG的电平转换之后的间隔乘以系数与频率产生信号SigFG的脉冲宽度Tp之间处于高电平的掩码信号MSK。 屏蔽电路在屏蔽信号MSK处于高电平的间隔期间使第一矩形波信号Pu至Pw的电平波动无效。

公开(公告)号：US20100201295A1

公开(公告)日：2010-08-12

申请号：US11917918

申请日：2006-06-19

申请人： Makoto Kuwamura

发明人： Makoto Kuwamura

IPC分类号： H02P6/18

CPC分类号： H02P6/182 ,  G11B19/28

摘要： A back electromotive detection comparator compares back electromotive voltages Vu to Vw with a common voltage Vn of coils, and generates first rectangular wave signals Pu to Pw. A masking circuit performs masking of the first rectangular wave signals Pu to Pw, and outputs the resultant signals as second rectangular wave signals Mu to Mw. An output circuit supplies a drive current to coils on the basis of the second rectangular wave signals Mu to Mw. A frequency generating circuit generates a frequency generation signal SigFG whose level switches at every edge of the second rectangular wave signals Mu to Mw. A mask signal generating circuit generates a mask signal MSK which is at a high level during an interval multiplied by a coefficient to a pulse width Tp of the frequency generation signal SigFG after level transition of the frequency generation signal SigFG. The masking circuit nullifies level fluctuation of the first rectangular wave signals Pu to Pw during an interval when a mask signal MSK is at the high level.

摘要翻译： 反电动势检测比较器将反向电动势Vu至Vw与线圈的公共电压Vn进行比较，并产生第一矩形波信号Pu至Pw。 掩蔽电路对第一矩形波信号Pu至Pw执行掩蔽，并将所得信号作为第二矩形波信号Mu输出至Mw。 输出电路基于第二矩形波信号Mu至Mw向线圈提供驱动电流。 频率发生电路产生频率产生信号SigFG，其电平在第二矩形波信号Mu的每个边缘切换到Mw。 掩模信号发生电路产生在频率产生信号SigFG的电平转换之后的间隔乘以系数与频率产生信号SigFG的脉冲宽度Tp之间处于高电平的掩码信号MSK。 屏蔽电路在屏蔽信号MSK处于高电平的间隔期间使第一矩形波信号Pu至Pw的电平波动无效。

公开(公告)号：US20060049856A1

公开(公告)日：2006-03-09

申请号：US11212993

申请日：2005-08-26

申请人： Tatsuji Nakai ,  Makoto Kuwamura

发明人： Tatsuji Nakai ,  Makoto Kuwamura

IPC分类号： H03K5/153

CPC分类号： H03K17/6871 ,  H02M2001/0009 ,  H03K17/0822

摘要： In a load-driving semiconductor device, a part of metal interconnection in a metal interconnection layer is used to form a detecting resistor for detecting an output current, and a resistance-measuring pad for measuring a resistance value of the detecting resistor is provided. The load-driving semiconductor device generates a trimmed reference voltage in accordance with the resistance value of the detecting resistor, and controls drive of a load based on a comparison between the reference voltage and a detected voltage according to a voltage drop of the detecting resistor. Therefore, it is possible to provide a load-driving semiconductor device in which a current-detecting resistor for detecting a current that flows through a load is embedded to reduce space required on a substrate and thus reduce cost, and a current can be detected with high accuracy.

摘要翻译： 在负载驱动用半导体装置中，使用金属配线层中的金属配线的一部分形成检测电流的检测电阻，并且设置用于测定检测电阻的电阻值的电阻测量焊盘。 负载驱动半导体器件根据检测电阻器的电阻值产生修整的参考电压，并且根据检测电阻器的电压降，基于参考电压与检测电压之间的比较来控制负载的驱动。 因此，可以提供一种负载驱动半导体器件，其中嵌入用于检测流经负载的电流的电流检测电阻器，以减少衬底上所需的空间，从而降低成本，并且可以用 高准确率。

公开(公告)号：US5976916A

公开(公告)日：1999-11-02

申请号：US737137

申请日：1996-11-07

申请人： Makoto Kuwamura ,  Kazuhiro Ikemura ,  Shinya Akizuki ,  Takashi Fukushima ,  Shinichiro Sudo ,  Satoshi Ito

发明人： Makoto Kuwamura ,  Kazuhiro Ikemura ,  Shinya Akizuki ,  Takashi Fukushima ,  Shinichiro Sudo ,  Satoshi Ito

IPC分类号： H01L21/54 ,  H01L23/13 ,  H01L23/24 ,  H01L21/56

CPC分类号： H01L23/13 ,  H01L21/54 ,  H01L23/24 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/181

摘要： A method of production of a semiconductor device such as a plastic pin grid array (PPGA) and a plastic ball grid array (PBGA) having a cavity-fill form. In this method, first, a semiconductor element (3) is placed in a cavity (6) formed in a multiple step-like substrate (2). Under this state, a pellet (7), which is in a solid state at a normal temperature, made of an encapsulating resin composition containing specific components, and has specific characteristics, is placed on the semiconductor element (3). Next, the semiconductor device is heated so that the pellet can melt to fill the cavity (6) with the composition, thereby encapsulating the semiconductor device (3). According to the present invention, a semiconductor device having low stress performance and excellent moisture-proof reliability can be efficiently produced.

摘要翻译： PCT No.PCT / JP96 / 00523 Sec。 371日期：1996年11月7日 102（e）1996年11月7日PCT PCT 1996年3月5日PCT公布。 第WO96 / 27900号公报 日期1996年9月12日制造具有空穴填充形式的诸如塑料针栅格阵列（PPGA）和塑料球栅阵列（PBGA）的半导体器件的制造方法。 在该方法中，首先，将半导体元件（3）放置在形成于多台阶状基板（2）中的空腔（6）中。 在这种状态下，在半导体元件（3）上放置由常规温度为固态的由具有特定成分的包封树脂组合物形成的具有特定特性的颗粒（7）。 接下来，加热半导体器件，使得颗粒可以熔化以用组合物填充空腔（6），从而封装半导体器件（3）。 根据本发明，可以有效地制造具有低应力性能和优异的防湿可靠性的半导体器件。