摘要:
Disclosed is a charged particle radiation device having a charged particle source which generates a charged particle as a probe, a charged particle optical system, a sample stage, a vacuum discharge system, an aperture which restricts a probe, a conductive film, and a charged particle detector, wherein the conductive film is provided at a position excluding the optical axis of the optical system between the sample stage and the aperture; and the distance between the sensing surface of the surface of the charged particle detector and the sample stage is larger than the distance between the sample stage and the conductive film, so that the surface of the conductive film and the sensing surface of the detector are inclined.
摘要:
In a scanning electron microscope, a reflection plate at ground potential is provided in a specimen chamber and backscattering electrons given off from a specimen impinge on the reflection plate to generate subsidiary electrons. An electric field supply electrode applied with a positive voltage of +100 to +500V is arranged in a gap defined by the reflection plate and a specimen stage. A first detection electrode is arranged to detect ion current attributable to backscattering electrons and a second detection electrode is arranged to detect current representative of coexistence of ion currents attributable to secondary electron and backscattering electron. The scanning electron microscope constructed as above can achieve simultaneous separation/detection of secondary electron and backscattering electron.
摘要:
A scanning charged particle microscope which facilitates adjustment, has a deep focal depth, and is provided with an aberration correction means. The state of aberration correction is judged from a SEM image by using a stop having plural openings and the judgment result is fed back to the adjustment of the aberration correction means. A stop of a nearly orbicular zone shape is used in combination with the aberration correction means.
摘要:
A scanning electron microscope includes an irradiation optical system for irradiating an electron beam to a sample; a sample holder for supporting the sample, arranged inside a sample chamber; at least one electric field supply electrode arranged around the sample holder; and an ion current detection electrode.
摘要:
Disclosed is a charged particle radiation device having a charged particle source which generates a charged particle as a probe, a charged particle optical system, a sample stage, a vacuum discharge system, an aperture which restricts a probe, a conductive film, and a charged particle detector, wherein the conductive film is provided at a position excluding the optical axis of the optical system between the sample stage and the aperture; and the distance between the sensing surface of the surface of the charged particle detector and the sample stage is larger than the distance between the sample stage and the conductive film, so that the surface of the conductive film and the sensing surface of the detector are inclined.
摘要:
The present invention provides an electron beam apparatus comprising a means for visualizing an axial displacement of a retarding electric field, and a means for adjusting axial displacement. The axial displacement visualizing means includes a reflective plate (6), and an optical system (2,3) for converging a secondary electron beam (9) on the reflective plate (6), and the axial displacement adjusting means includes an incline rotation mechanism (8) for a sample stage (5). With this configuration, in electron beam apparatuses such as SEM and the like, such problems as visual field displacement caused by displacement of the axial symmetry of the electric field between an objective lens (3) and a sample (4) and inability to measure secondary electrons and reflected electrons that provide desired information can be eliminated.
摘要:
The present invention provides an electron beam apparatus comprising a means for visualizing an axial displacement of a retarding electric field, and a means for adjusting axial displacement. The axial displacement visualizing means includes a reflective plate (6), and an optical system (2, 3) for converging a secondary electron beam (9) on the reflective plate (6), and the axial displacement adjusting means includes an incline rotation mechanism (8) for a sample stage (5). With this configuration, in electron beam apparatuses such as SEM and the like, such problems as visual field displacement caused by displacement of the axial symmetry of the electric field between an objective lens (3) and a sample (4) and inability to measure secondary electrons and reflected electrons that provide desired information can be eliminated.
摘要:
To provide a low acceleration scanning electron microscope that can discriminate and detect reflected electrons and secondary electrons even with a low probe current, this scanning electron microscope is provided with an electron gun (29), an aperture (26), a sample table (3), an electron optical system (4-1) for making an electron beam (31) converge on a sample (2), a deflection means (10), a secondary electron detector (8), a reflected electron detector (9), and a cylindrical electron transport means (5) in a position between the electron gun (29) and sample (2). The reflected electron detector (9) is provided within the electron transport means (5) and on a side further away from the electron gun (29) than the secondary electron detector (8) and the deflection means (10). The reception surface (9-1) of the reflected electron detector (9) is electrically wired so as to have the same potential as the electron transport means (5).
摘要:
The present invention provides a highly sensitive, thin detector useful for observing low-voltage, high-resolution SEM images, and provides a charged particle beam application apparatus based on such a detector. The charged particle beam application apparatus includes a charged particle irradiation source, a charged particle optics for irradiating a sample with a charged particle beam emitted from the charged particle irradiation source, and an electron detection section for detecting electrons that are secondarily generated from the sample. The electron detection section includes a diode device that is a combination of a phosphor layer, which converts the electrons to an optical signal, and a device for converting the optical signal to electrons and subjecting the electrons to avalanche multiplication, or includes a diode device having an electron absorption region that is composed of at least a wide-gap semiconductor substrate with a bandgap greater than 2 eV.
摘要:
A scanning charged particle microscope which facilitates adjustment, has a deep focal depth, and is provided with an aberration correction means. The state of aberration correction is judged from a SEM image by using a stop having plural openings and the judgment result is fed back to the adjustment of the aberration correction means. A stop of a nearly orbicular zone shape is used in combination with the aberration correction means.