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公开(公告)号：US20240359993A1
公开(公告)日：2024-10-31
申请号：US18681649
申请日：2022-07-27
发明人： Keiko YOSHITAKE , Kazuya KUROIWA
IPC分类号： C01B33/149
CPC分类号： C01B33/149 , C01P2006/22
摘要： A silica sol dispersed in a nonaqueous solvent, especially a hydrophobic solvent, to improve the compatibility with organic materials, and method for producing the same; the silica sol containing alkali, in which at least two types of alkoxy groups of Si—OR0 and Si—OR1 (provided that R0 is a C1-4 alkyl group, R1 is a C2-10 organic group which arbitrarily has an oxygen atom, and R0 and R1 are not the same chemical group) are present on or near a surface of silane-coated silica particles, the silica particles having a molar ratio (Si—OR1)/(Si—OR0) of 0.17 to 10 are used as dispersoids, and at least one hydrophobic organic solvent selected from the group consisting of ketones, ethers, esters, amides, and hydrocarbons is used as a dispersion medium.
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公开(公告)号：US20240352281A1
公开(公告)日：2024-10-24
申请号：US18292056
申请日：2022-07-14
发明人： Takahisa OKUNO , Yuki USUI , Tetsuya SHINJO
IPC分类号： C09J5/06 , C09J5/04 , C09J7/10 , C09J183/06 , H01L21/683
CPC分类号： C09J5/06 , C09J5/04 , C09J7/10 , C09J183/06 , H01L21/6835 , C09J2203/326 , C09J2301/208 , C09J2301/304 , C09J2301/408 , C09J2301/502 , H01L2221/68318 , H01L2221/6834 , H01L2221/68381
摘要： A method of manufacturing a laminate includes forming a first adhesive coating layer on a surface of a support substrate; forming a second adhesive coating layer on a surface of a semiconductor substrate; and bonding the first and second adhesive coating layer, followed by heating, to form an adhesive layer from the first adhesive coating layer and the second adhesive coating layer, wherein the first adhesive coating layer is formed from a first adhesive composition, the second adhesive coating layer is formed from a second adhesive composition, and one of the first adhesive composition and the second adhesive composition contains a first thermosetting component and a second thermosetting component that reacts with the first thermosetting component in the presence of a catalyst, and the other contains the catalyst, and at least one of the first adhesive composition and the second adhesive composition contains a release agent component.
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3.发明公开公开(公告)号：US20240302745A1
公开(公告)日：2024-09-12
申请号：US18271390
申请日：2022-01-25
发明人： Shou SHIMIZU , Mamoru TAMURA
IPC分类号： G03F7/11 , C08F220/18 , C08F220/28
CPC分类号： G03F7/11 , C08F220/1811 , C08F220/283
摘要： A composition for forming a resist underlayer film that enables the formation of a desired resist pattern; a method for producing a resist pattern and a method for producing a semiconductor device, each of which uses the composition for forming a resist underlayer film. This composition for forming a resist underlayer film contains a polymer and a solvent, the polymer including a unit structure (A) represented by formula (1)
[in formula (1): R1 represents a hydrogen atom or an alkyl group having 1-6 carbon atoms; and L1 represents an optionally substituted aliphatic ring, an aryl group having 6-40 carbon atoms or a hetero ring] and a unit structure (B) that contains an aliphatic ring in a side chain and that is different from the unit structure (A).-
公开(公告)号：US20240295819A1
公开(公告)日：2024-09-05
申请号：US18567671
申请日：2022-06-10
发明人： Satoshi TAKEDA , Kodai KATO , Wataru SHIBAYAMA , Shuhei SHIGAKI , Ken ISHIBASHI
IPC分类号： G03F7/11 , C09D183/04
CPC分类号： G03F7/11 , C09D183/04
摘要： A composition for forming a silicon-containing resist underlayer film, the composition including: component [A]: a polysiloxane; and component [C]: a solvent, wherein the polysiloxane contains a constituent unit derived from a hydrolyzable silane (A) having an alkyl iodide group.
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公开(公告)号：US12077636B2
公开(公告)日：2024-09-03
申请号：US18142625
申请日：2023-05-03
IPC分类号： C08G73/06 , C07D405/14 , C08G59/32 , C08G59/42 , C08G59/68 , C09D179/04 , C09J179/04
CPC分类号： C08G73/0644 , C07D405/14 , C08G59/3245 , C08G59/4215 , C08G59/688 , C09D179/04 , C09J179/04 , Y10T428/2982
摘要： There is provided an epoxy composition which has difficulty in precipitating a crystal during storage, is homogeneous and can be stored for a long period; and a cured product of the composition having excellent transparency, heat resistance, and light resistance can be obtained on curing. An α-type tris-(2,3-epoxypropyl)-isocyanurate crystal including β-type tris-(2,3-epoxypropyl)-isocyanurate in the crystal in a ratio of 2% by mass to 15% by mass. A method for producing the α-type tris-(2,3-epoxypropyl)-isocyanurate crystal including step (i) separating β-type tris-(2,3-epoxypropyl)-isocyanurate contained in a tris-(2,3-epoxypropyl)-isocyanurate solution from the solution as a solid to obtain a crystal with an increased content ratio of α-type tris-(2,3-epoxypropyl)-isocyanurate.
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6.发明公开公开(公告)号：US20240287346A1
公开(公告)日：2024-08-29
申请号：US18634755
申请日：2024-04-12
发明人： Yoshiomi HIROI , Natsuki ABE , Taito NISHINO
IPC分类号： C09D133/14 , B05D3/00 , B05D7/24 , C08G61/04 , C09D133/26 , C09D165/04 , C12M1/00 , C12M1/22 , C12M1/32 , C12M1/34 , C12M3/00 , G01N21/77
CPC分类号： C09D133/14 , B05D3/00 , B05D7/24 , C09D133/26 , C09D165/04 , C12M1/00 , C12M1/34 , C12M3/00 , C12M23/10 , C12M23/12 , C12M23/20 , G01N21/7703 , C08G61/04 , C08G2261/12 , C08G2261/143 , C08G2261/147
摘要： The invention provides a structural base that includes a coating film on at least a portion of the surface thereof, the coating film having a difference between the maximum film thickness and the minimum film thickness of not more than 1000 Å. A method of the invention produces such structural bases. The coating film includes a copolymer including a repeating unit containing a group represented by formula (a), and a repeating unit containing a group represented by formula (b):
wherein Ua1, Ua2, Ub1, Ub2, Ub3 and An− are as defined herein.-
7.发明公开公开(公告)号：US20240270973A1
公开(公告)日：2024-08-15
申请号：US18579628
申请日：2023-01-25
发明人： Takeshi NAKADA , Kazuya EBARA , Megumi ARAKI , Masatoshi SUGISAWA
CPC分类号： C09C1/3081 , C08K9/06 , C09C3/12 , C01P2002/86 , C01P2004/62 , C01P2004/64 , C01P2006/12 , C01P2006/40 , C08K2201/005 , C08K2201/006 , C08K2201/011
摘要： Silica particles have a dielectric loss tangent of 0.01 or less at 1 GHz and satisfy the requirements (i), (ii) and (iii): (i) an average primary particles diameter of 5 nm to 120 nm; (ii) a ratio of a specific surface area by water vapor adsorption (SH2O) to a specific surface area by nitrogen adsorption (SN2 i.e., (SH2O/SN2) of 0.6 or less; and (iii) a total silanol group content of 5% or less as determined by the following Formula (1): total silanol group content (%)=(Q2×2/4+Q3×1/4+Q4×0/4) . . . Formula (1) [in Formula (1), each of Q2, Q3 and Q4 is the proportion (%) of the peak areas derived from silicon atom structures], and a silica dispersion.
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公开(公告)号：US20240219834A1
公开(公告)日：2024-07-04
申请号：US18286612
申请日：2022-04-25
发明人： Shun KUBODERA , Takahiro KISHIOKA , Tokio NISHITA
摘要： A semiconductor device manufacturing process, forming a multilayer structure of a metal oxide (e.g., copper oxide) and a resist underlayer film on a stepped metal substrate reduces exposure reflectance from the substrate, thereby reducing standing waves of the resist pattern (defects caused by reflection) and provides a favorable rectangular resist pattern on the substrate. A pattern-equipped substrate manufacturing method includes: a step for performing an oxidation treatment on a substrate containing metal on a surface thereof to form a metal oxide film on the substrate surface; a step for applying a resist on the metal oxide film and conducting baking to form a resist film; a step for exposing a semiconductor substrate covered by the metal oxide film and the resist; and a step for developing the exposed resist film and conducting patterning.
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公开(公告)号：US12012368B2
公开(公告)日：2024-06-18
申请号：US18274967
申请日：2023-02-15
发明人： Jiahao Liu , Takuya Fukuoka , Hiroaki Sakaida
IPC分类号： C07C211/63 , C07C209/68 , C07C209/84
CPC分类号： C07C211/63 , C07C209/68 , C07C209/84 , C07B2200/13
摘要： An object is to provide a cage silicate that can be industrially safely and simply produced by using an alkali silicate solution that does not generate alcohol as a Si raw material and using non-toxic quaternary ammonium, and a method for producing the same. The problem is solved by the following cage silicate:
A cage silicate consisting of anion component 1 represented by following formula (1), anion component 2 which is a mineral acid ion, cation component 1 represented by following formula (2), and cation component 2 which is an alkali ion, in which, to the mole number in terms of SiO2, a ratio of the mole number of water, (H2O/SiO2), is 0.7 to 30, a ratio of the mole number of alkali ions, (alkali ions/SiO2), is 1.0×10−7 to 1.0−10−2, and a ratio of the mole number of the mineral acid ions, (mineral acid ions/SiO2), is 1.0×10−7 to 1.0×10−3.
In formula (2), R represents an alkyl group having 2 to 20 carbon atoms.-
公开(公告)号：US20240184204A1
公开(公告)日：2024-06-06
申请号：US18282103
申请日：2022-03-18
发明人： Hiroyuki WAKAYAMA , Shou SHIMIZU , Kosuke IGATA , Mamoru TAMURA
CPC分类号： G03F7/0395 , G03F7/0048 , G03F7/168
摘要： A composition for forming a resist underlayer film that enables the formation of a resist pattern; and resist pattern production and semiconductor device manufacturing methods, which use the composition for forming a resist underlayer film. The composition for forming a resist underlayer film has a basic organic group substituted with a protecting group in the repeating unit structure of a polymer containing a heterocycle, or at a terminal thereof, and further includes a solvent. The polymer may include a heterocycle containing an alkenyl group having 2-10 carbon atoms. The polymer may have, in a main chain thereof, at least one structural unit represented by Formula (3). (In Formula (3), A1, A2, A3, A4, A5, and A6 each independently represent a hydrogen atom, a methyl group, or an ethyl group, and Q1 represents a divalent organic group including a heterocycle, and m1 and m2 each independently represent 0 or 1.)
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