公开(公告)号：US20120137736A1

公开(公告)日：2012-06-07

申请号：US13357117

申请日：2012-01-24

申请人： Osamu Sakamoto ,  Chikao Tanaka ,  Seiji Miyazaki ,  Satoru Ohkawa

发明人： Osamu Sakamoto ,  Chikao Tanaka ,  Seiji Miyazaki ,  Satoru Ohkawa

IPC分类号： C03B3/02 ,  C03B5/00 ,  C03B25/00

CPC分类号： C03B3/026 ,  C03B3/00 ,  C03B5/025 ,  C03B5/2353 ,  F27B3/10 ,  F27B3/20 ,  F27D3/10 ,  Y02P40/52 ,  Y02P40/55

摘要： The present invention provides a glass-melting furnace etc. which can maintain homogeneity of molten glass in an apparatus and a process for producing molten glass by melting glass raw material particles and glass cullet pieces.In the present invention, glass raw material particles are dropped from a glass raw material particle heating unit 14 constituted by oxygen combustion burners 34, 34 . . . and a glass raw material particle feed portion, and the glass raw material particles are changed into liquid glass particles 38, 38 . . . in high-temperature gas phases produced by flames 32, 32 . . . of oxygen combustion burners 34, 34 . . . . In the step of heating and melting the glass raw material particles, glass cullet pieces 30, 30 . . . are feed by an feed means 40 of a glass cullet piece feed portion 12 so as to be spread radially toward the plurality of flames 32, 32 . . . around the feed portion.

摘要翻译： 本发明提供一种能够保持熔融玻璃在设备中的均匀性的玻璃熔化炉等，以及通过熔化玻璃原料颗粒和玻璃碎片来制造熔融玻璃的方法。 在本发明中，玻璃原料颗粒从由氧燃烧器34,34构成的玻璃原料颗粒加热单元14中滴下。 。 。 玻璃原料粒子供给部，玻璃原料粒子变成液晶玻璃粒38,38。 。 。 在由火焰32,32产生的高温气相中。 。 。 的氧燃烧器34,34。 。 。 。 在玻璃原料颗粒加热熔融的步骤中，玻璃碎片30,30。 。 。 通过玻璃碎片进给部分12的进给装置40进给，以便朝向多个火焰32,32径向扩展。 。 。 围绕进料部分。

公开(公告)号：US20090064716A1

公开(公告)日：2009-03-12

申请号：US12260201

申请日：2008-10-29

申请人： Osamu SAKAMOTO ,  Tomoyuki Tsujimura

发明人： Osamu SAKAMOTO ,  Tomoyuki Tsujimura

IPC分类号： C03C10/00

CPC分类号： C03B1/02 ,  C03B3/026 ,  C03B19/01 ,  Y02P40/57

摘要： The present invention provides a process for producing glass, which can reduce energy consumption and which enables to obtain homogenous high quality glass products containing extremely few bubbles and containing no unmelted raw material.A process for producing glass comprising a granulation step of granulating a glass raw material to obtain a granulated product containing a granulated product having a particle size of from 10 to 500 μm, and a vitrification step of making the granulated product obtained in the granulation step pass through a high temperature gas of from 2,000 to 20,000 K to obtain vitrified particles.

摘要翻译： 本发明提供一种玻璃的制造方法，其能够降低能量消耗，能够获得均匀的高品质玻璃制品，其含有极少的气泡，不含未熔化的原料。 一种玻璃制造方法，其特征在于，包括造粒步骤，对玻璃原料进行造粒，得到含有粒径为10〜500μm的粒状物的造粒物，使造粒步骤中得到的造粒物通过的玻璃化工序通过 通过2000〜20,000K的高温气体，得到玻璃化颗粒。

公开(公告)号：US20050178159A1

公开(公告)日：2005-08-18

申请号：US11030294

申请日：2005-01-07

申请人： Yoshihiro Shiraishi ,  Osamu Sakamoto

发明人： Yoshihiro Shiraishi ,  Osamu Sakamoto

IPC分类号： C03B17/06 ,  C03B35/24 ,  C03B40/02

CPC分类号： C03B17/062 ,  C03B17/064 ,  C03B35/188 ,  C03B35/246

摘要： In an apparatus for manufacturing thin sheet glass, comprising a forming body 12 including a main body having a cross-sectional shape converging downwardly, the main body being configured to converging streams of molten glass into a single glass ribbon at a lower converged edge portion thereof, the streams of the molten glass flowing down along both surface of the main body; and edge members, the edge members being configured to restrict a width of the molten glass, wherein the glass ribbon formed by the forming body 12 is downwardly pulled to form thin sheet glass; the apparatus further includes a non-contact support member disposed in the vicinity of the lower converged edge portion of the main body, the non-contact support member being configured to form a thin gas layer on a supporting surface thereof, wherein the glass ribbon is supported over an entire width thereof in a non-contact way by the non-contact support member in a course wherein the glass ribbon is downwardly pulled.

摘要翻译： 在一种薄板玻璃的制造装置中，其特征在于，具备成形体12，该成形体12具有向下方收敛的截面形状的主体，所述主体构成为将熔融玻璃流会聚在其下方的会聚边缘部的单个玻璃带 熔融玻璃流沿着主体的两个表面向下流动; 边缘部件构造成限制熔融玻璃的宽度，其中由成形体12形成的玻璃带向下拉以形成薄板玻璃; 所述装置还包括设置在所述主体的下会聚边缘部分附近的非接触支撑构件，所述非接触支撑构件构造成在其支撑表面上形成薄气体层，其中所述玻璃带是 在玻璃带向下拉的过程中，非接触支撑构件以非接触的方式在其整个宽度上被支撑。

公开(公告)号：US06459121B1

公开(公告)日：2002-10-01

申请号：US09621533

申请日：2000-07-21

申请人： Osamu Sakamoto ,  Naoki Tsuji ,  Satoshi Shimizu

发明人： Osamu Sakamoto ,  Naoki Tsuji ,  Satoshi Shimizu

IPC分类号： H01L29788

CPC分类号： H01L27/11521 ,  H01L27/115

摘要： A method for producing a non-volatile semiconductor memory device, comprising the steps of providing a semiconductor substrate having a surface; forming trench isolations on the substrate, the trench isolations being projected from the surface; forming source and drain regions between the neighboring trench isolations, so that the source and drain regions are faced each other across a channel region; and forming a floating gate electrode on the channel region through a tunnel film which is formed on the channel region.

摘要翻译： 一种制造非易失性半导体存储器件的方法，包括以下步骤：提供具有表面的半导体衬底; 在衬底上形成沟槽隔离，沟槽隔离从表面突出; 在相邻沟槽隔离之间形成源极和漏极区域，使得源极和漏极区域跨越沟道区域彼此面对; 以及通过形成在沟道区上的隧道膜在沟道区上形成浮栅电极。

公开(公告)号：US6034393A

公开(公告)日：2000-03-07

申请号：US982212

申请日：1997-12-01

申请人： Osamu Sakamoto ,  Natsuo Ajika

发明人： Osamu Sakamoto ,  Natsuo Ajika

IPC分类号： H01L21/762 ,  H01L21/8247 ,  H01L29/788

CPC分类号： H01L27/11521 ,  H01L21/76229 ,  H01L21/76232

摘要： A nonvolatile semiconductor memory device with trench isolation having sufficient capability of isolating memory cells is provided. A trench formed as a line in the main surface of semiconductor substrate is filled with a first insulating film. On semiconductor substrate on both sides of trench, a first gate electrode is provided with a first oxide film interposed. On the first gate electrode, a second gate electrode is provided with a second insulating film interposed. An angle formed by a side wall upper surface of trench and the surface of semiconductor substrate is smaller than 90.degree..

摘要翻译： 提供了具有隔离存储单元的足够能力的具有沟槽隔离的非易失性半导体存储器件。 在半导体衬底的主表面中形成为一条线的沟槽填充有第一绝缘膜。 在沟槽两侧的半导体衬底上，第一栅电极设置有插入的第一氧化膜。 在第一栅电极上设置有插入第二绝缘膜的第二栅电极。 由沟槽的侧壁上表面和半导体衬底的表面形成的角度小于90°。

公开(公告)号：US5581093A

公开(公告)日：1996-12-03

申请号：US554508

申请日：1995-11-07

申请人： Osamu Sakamoto

发明人： Osamu Sakamoto

IPC分类号： H01L21/3205 ,  H01L21/768 ,  H01L21/8238 ,  H01L21/8244 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L27/092 ,  H01L27/11 ,  H01L29/417 ,  H01L29/43 ,  H01L29/786

CPC分类号： H01L27/1104 ,  H01L21/76877 ,  H01L23/53271 ,  H01L2924/0002 ,  Y10S257/903

摘要： A silicon layer in a lower layer and an interconnection layer arranged in an upper layer are electrically connected through an opening for contact. A silicon plug layer having the same conductivity type as that of the silicon layer is embedded in the opening. The silicon plug layer is embedded in the opening by an etch back method after deposited using a CVD method. The interconnection layer in the upper layer has conductivity type different from that of the silicon plug layer. A refractory metal silicide layer is formed between the upper interconnection layer and the silicon plug layer.The refractory metal silicide layer prevents pn junction from being formed between the upper interconnection layer and the silicon plug layer.

公开(公告)号：US5497022A

公开(公告)日：1996-03-05

申请号：US185439

申请日：1994-01-24

申请人： Osamu Sakamoto

发明人： Osamu Sakamoto

IPC分类号： H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L27/11 ,  H01L29/78

CPC分类号： H01L27/1108 ,  Y10S257/903

摘要： A semiconductor device includes a polycrystalline silicon layer formed on a silicon layer with an oxide film therebetween, an interlayer insulating layer formed to cover the surface of the silicon layer and the surface of the polycrystalline silicon layer, and a silicon plug layer formed in an embedded manner in a contact hole in the interlayer insulating layer to be directly connected to the surface of an end portion of the polycrystalline silicon layer and the surface of the silicon layer in the proximity of the end portion of the polycrystalline silicon layer. The polycrystalline silicon layer and the silicon plug layer have the same type of conductivity. By this interconnection structure, the semiconductor device is improved in the patterning accuracy of the contact portion of a multilayer stacked interconnection. Furthermore, an ohmic contact between conductive interconnection layers can be realized with relatively simple manufacturing steps without occurrence of a voltage drop caused by a pn junction.

摘要翻译： 半导体器件包括在其上形成有氧化膜的硅层上形成的多晶硅层，形成为覆盖硅层的表面和多晶硅层的表面的层间绝缘层，以及形成于嵌入 在层间绝缘层的接触孔中直接连接到多晶硅层的端部表面和硅层表面在多晶硅层的端部附近的方式。 多晶硅层和硅塞层具有相同类型的导电性。 通过该互连结构，提高了多层堆叠互连的接触部分的图案化精度的半导体器件。 此外，可以通过相对简单的制造步骤实现导电互连层之间的欧姆接触，而不会发生由pn结引起的电压降。

公开(公告)号：US5450828A

公开(公告)日：1995-09-19

申请号：US84508

申请日：1993-06-29

申请人： Osamu Sakamoto ,  Chitoshi Saito

发明人： Osamu Sakamoto ,  Chitoshi Saito

IPC分类号： F02D41/02 ,  F02D31/00 ,  F02D37/02 ,  F02D41/04 ,  F02P5/04 ,  F02P5/15 ,  F02D43/00

CPC分类号： F02P5/1508 ,  F02D31/007 ,  F02D37/02 ,  F02P5/045 ,  Y02T10/46

摘要： Embodiments of engine speed control and methods of maintaining engine speed control and fuel injection so as to minimize hunting and improve exhaust emission control, particularly at low speeds. This is achieved by setting a fixed amount of fuel supplied to the engine per cycle, per cylinder when the engine speed is below a predetermined speed or a speed below a predetermined speed is called for. Engine speed control is maintained under the constant fuel position by controlling the spark advance in one embodiment. A manual spark advance and automatic spark advance are depicted.

摘要翻译： 发动机速度控制的实施例和维持发动机转速控制和燃料喷射的方法，以便最小化起搏并改善废气排放控制，特别是在低速下。 这是通过在发动机速度低于预定速度或者低于预定速度的速度时，每个气缸每循环设定一定量的供给发动机的燃料来实现的。 在一个实施例中，通过控制火花提前，发动机转速控制保持在恒定燃料位置。 描绘了手动火花提前和自动火花提前。

公开(公告)号：US5387163A

公开(公告)日：1995-02-07

申请号：US67220

申请日：1993-05-26

申请人： Osamu Sakamoto ,  Chitoshi Saito

发明人： Osamu Sakamoto ,  Chitoshi Saito

IPC分类号： B63H20/24 ,  F02B61/04 ,  F02B67/00 ,  F02B75/00 ,  F02B75/02 ,  F02B75/18 ,  F02B75/20 ,  F02B75/22 ,  F02D41/00 ,  F02D41/22 ,  F02D41/32 ,  F02D41/34 ,  F02D41/36 ,  F02D45/00 ,  F16H59/70

CPC分类号： F02D41/32 ,  F02B75/007 ,  F02B75/20 ,  F02D41/0087 ,  F02D41/22 ,  F02B2075/025 ,  F02B2075/1812 ,  F02B2075/1824 ,  F02B61/045 ,  F02B75/22 ,  F02D2400/04 ,  Y10T477/663 ,  Y10T477/68

摘要： An outboard motor having vertically spaced cylinders and wherein exhaust emission control is provided by providing a leaner than normal fuel/air mixture to the lower cylinders under certain conditions. In addition, the device provides enrichment when the engine is operating at a below normal condition and also provides an engine speed reduction if the engine is operating at a temperature above a desired maximum temperature. Both three cylinder inline and V-6 embodiments are depicted.

摘要翻译： 具有垂直间隔的气缸的舷外马达，并且其中通过在某些条件下向下部气缸提供比正常燃料/空气混合物更稀的废气排放控制。 此外，当发动机在低于正常条件下操作时，该装置提供浓缩，并且如果发动机在高于所需最大温度的温度下操作，还提供发动机转速降低。 描述了三缸内联和V-6实施例。

公开(公告)号：US5329902A

公开(公告)日：1994-07-19

申请号：US12311

申请日：1993-02-02

申请人： Osamu Sakamoto ,  Chitoshi Saito ,  Seiichi Nishimura

发明人： Osamu Sakamoto ,  Chitoshi Saito ,  Seiichi Nishimura

IPC分类号： F02B23/10 ,  F02B25/14 ,  F02B33/04 ,  F02B61/04 ,  F02B75/02 ,  F02B75/12 ,  F02B75/16 ,  F02M51/06 ,  F02M61/18 ,  F02M69/04

CPC分类号： F02M51/0678 ,  F02B23/101 ,  F02B25/14 ,  F02B33/04 ,  F02B75/16 ,  F02M51/0675 ,  F02M61/1853 ,  F02M69/045 ,  F02B2075/025 ,  F02B2075/125 ,  F02B61/045 ,  Y02T10/123 ,  Y02T10/125

摘要： Embodiments of two-cycle crankcase compression direct injected internal combustion engines that permit good firing and effective stratification, particularly at low speed, low load conditions. The engine defines a combustion chamber having a recess with a projection extending into the center of the recess and against which fuel is injected by a fuel injector as the piston approaches top dead center at idle. The spark plug firing is initiated prior to completion of the fuel injection.

摘要翻译： 双循环曲轴箱压缩直接喷射内燃机的实施例，其允许良好的燃烧和有效的分层，特别是在低速，低负载条件下。 发动机限定了具有凹部的燃烧室，突出部延伸到凹部的中心并随着活塞在怠速时接近上止点时由燃料喷射器喷射燃料。 在完成燃料喷射之前启动火花塞点火。