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    LIGHT EMITTING DEVICE AND LIGHT EMITTING APPARATUS HAVING THE SAME
    1.
    发明申请
    LIGHT EMITTING DEVICE AND LIGHT EMITTING APPARATUS HAVING THE SAME 有权
    发光装置和具有该发光装置的发光装置

    公开(公告)号：US20130119424A1

    公开(公告)日：2013-05-16

    申请号：US13677566

    申请日：2012-11-15

    申请人： Pil Geun KANG ,  Hee Seok CHOI ,  Seok Beom CHOI ,  Ju Won LEE ,  Deok Ki HWANG ,  Young Ju HAN

    发明人： Pil Geun KANG ,  Hee Seok CHOI ,  Seok Beom CHOI ,  Ju Won LEE ,  Deok Ki HWANG ,  Young Ju HAN

    IPC分类号： H01L33/60

    CPC分类号： H01L33/22 ,  H01L33/20 ,  H01L33/40 ,  H01L33/405 ,  H01L33/44 ,  H01L33/50 ,  H01L33/62 ,  H01L33/641 ,  H01L33/642 ,  H01L33/644 ,  H01L2224/16245 ,  H01L2924/01322 ,  H01L2924/00

    摘要： A light emitting device is provided a transmissive substrate; a first pattern portion including a protrusions; a second pattern portion including a concaves having a width smaller than a width of each protrusion; a light emitting structure under the transmissive substrate and including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer; a first electrode under the first conductive semiconductor layer; a reflective electrode layer under the second conductive semiconductor layer; a second electrode under the reflective electrode layer; a first connection electrode under the first electrode; a second connection electrode under the second electrode; and an insulating support member around the first electrode and the first connection electrode and around the second electrode and the second connection electrode and including a ceramic-based thermal diffusion agent.

    摘要翻译： 发光装置设置有透射基板; 包括突起的第一图案部分; 第二图案部分，其包括宽度小于每个突起的宽度的凹部; 在透射基底下方的发光结构，包括第一导电半导体层，第二导电半导体层和有源层; 在第一导电半导体层下方的第一电极; 第二导电半导体层下方的反射电极层; 反射电极层下方的第二电极; 第一电极下方的第一连接电极; 在第二电极下方的第二连接电极; 以及绝缘支撑构件，其围绕所述第一电极和所述第一连接电极并且围绕所述第二电极和所述第二连接电极并且包括陶瓷基热扩散剂。

    Gallium nitride based light emitting diode
    2.
    发明授权
    Gallium nitride based light emitting diode 有权
    氮化镓基发光二极管

    公开(公告)号：US07687821B2

    公开(公告)日：2010-03-30

    申请号：US11647266

    申请日：2006-12-29

    申请人： Dong Min Jeon ,  Jae Ho Han ,  Pil Geun Kang

    发明人： Dong Min Jeon ,  Jae Ho Han ,  Pil Geun Kang

    IPC分类号： H01L33/00 ,  H01L27/15 ,  H01L31/12

    CPC分类号： H01L33/44 ,  H01L33/42

    摘要： A GaN-based LED comprises a substrate; an an-type GaN layer formed on the substrate; an active layer formed on a predetermined region of the n-type GaN layer; a p-type GaN layer formed on the active layer; a transparent electrode formed on the p-type GaN layer; a p-electrode formed on the transparent electrode; an n-type electrode formed on the n-type GaN layer on which the active layer is not formed; and a protective film formed on a resulting structure between the transparent electrode and the n-type electrode, the protective film being composed of a plasma-oxidized transparent layer.

    摘要翻译： GaN基LED包括基板; 在该基板上形成的a型GaN层; 形成在n型GaN层的预定区域上的有源层; 形成在有源层上的p型GaN层; 形成在p型GaN层上的透明电极; 形成在透明电极上的p电极; 在形成有活性层的n型GaN层上形成的n型电极; 以及在所述透明电极和所述n型电极之间形成的所得结构上形成的保护膜，所述保护膜由等离子体氧化的透明层构成。

    LIGHT EMITTING DEVICE AND LIGHT EMITTING APPARATUS
    4.
    发明申请
    LIGHT EMITTING DEVICE AND LIGHT EMITTING APPARATUS 有权
    发光装置和发光装置

    公开(公告)号：US20120299038A1

    公开(公告)日：2012-11-29

    申请号：US13293858

    申请日：2011-11-10

    申请人： Deok Ki Hwang ,  Young Ju Han ,  Hee Seok Choi ,  Ju Won Lee ,  Pil Geun Kang ,  Seok Beom Choi

    发明人： Deok Ki Hwang ,  Young Ju Han ,  Hee Seok Choi ,  Ju Won Lee ,  Pil Geun Kang ,  Seok Beom Choi

    IPC分类号： H01L33/36

    CPC分类号： H01L33/62 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/32 ,  H01L33/385 ,  H01L33/405 ,  H01L33/44 ,  H01L33/46 ,  H01L33/483 ,  H01L33/505 ,  H01L33/507 ,  H01L33/641 ,  H01L2224/16

    摘要： A light emitting device may be provided that includes a substrate, a light emitting structure, a first electrode under the first semiconductor layer, a reflective electrode layer under the second conductive semiconductor layer, a second electrode under the reflective electrode layer, and a support member under the first semiconductor layer and the reflective electrode layer around the first and second electrodes. A first connection electrode may be provided under the first electrode. At least a part of the first connection electrode is provided in the support member. A second connection electrode may be provided under the second electrode At least a part of the second connection electrode may be provided in the support member.

    摘要翻译： 可以提供一种发光器件，其包括衬底，发光结构，第一半导体层下的第一电极，第二导电半导体层下的反射电极层，反射电极层下的第二电极和支撑构件 在第一半导体层和第一和第二电极周围的反射电极层之下。 可以在第一电极下方设置第一连接电极。 第一连接电极的至少一部分设置在支撑构件中。 第二连接电极可以设置在第二电极下方第二连接电极的至少一部分可以设置在支撑构件中。

    Nitride semiconductor light emitting device including electrodes of a multilayer structure
    5.
    发明授权
    Nitride semiconductor light emitting device including electrodes of a multilayer structure 有权
    氮化物半导体发光器件包括多层结构的电极

    公开(公告)号：US07868344B2

    公开(公告)日：2011-01-11

    申请号：US11517343

    申请日：2006-09-08

    申请人： Pil Geun Kang ,  Bong Il Yi ,  Jae Ho Han ,  Dong Min Jeon

    发明人： Pil Geun Kang ,  Bong Il Yi ,  Jae Ho Han ,  Dong Min Jeon

    IPC分类号： H01L33/00

    CPC分类号： H01L33/405 ,  H01L33/32 ,  H01L2933/0016

    摘要： A nitride semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a p-electrode formed on the p-type nitride semiconductor layer; and an n-electrode formed on the n-type nitride semiconductor layer in which the active layer is not formed. The p-electrode and n-electrode are formed to have such a multilayer structure that an ohmic contact layer, a compound layer containing aluminum or silver, and a degradation preventing layer are sequentially laminated.

    摘要翻译： 氮化物半导体LED包括基板; 在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的预定区域上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在p型氮化物半导体层上的p型电极; 以及形成在不形成有源层的n型氮化物半导体层上的n电极。 p电极和n电极形成为具有依次层叠欧姆接触层，含有铝或银的化合物层和降解防止层的多层结构。

    NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING ELECTRODES OF A MULTILAYER STRUCTURE
    6.
    发明申请
    NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING ELECTRODES OF A MULTILAYER STRUCTURE 有权
    包含多层结构电极的氮化物半导体发光器件

    公开(公告)号：US20100308366A1

    公开(公告)日：2010-12-09

    申请号：US11517343

    申请日：2006-09-08

    申请人： Pil Geun Kang ,  Bong Il Yi ,  Jae Ho Han ,  Dong Min Jeon

    发明人： Pil Geun Kang ,  Bong Il Yi ,  Jae Ho Han ,  Dong Min Jeon

    IPC分类号： H01L33/02 ,  H01L33/12 ,  H01L33/36

    CPC分类号： H01L33/405 ,  H01L33/32 ,  H01L2933/0016

    摘要： A nitride semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a p-electrode formed on the p-type nitride semiconductor layer; and an n-electrode formed on the n-type nitride semiconductor layer in which the active layer is not formed. The p-electrode and n-electrode are formed to have such a multilayer structure that an ohmic contact layer, a compound layer containing aluminum or silver, and a degradation preventing layer are sequentially laminated.

    摘要翻译： 氮化物半导体LED包括基板; 在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的预定区域上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在p型氮化物半导体层上的p型电极; 以及形成在不形成有源层的n型氮化物半导体层上的n电极。 p电极和n电极形成为具有依次层叠欧姆接触层，含有铝或银的化合物层和降解防止层的多层结构。