公开(公告)号：US20130193464A1

公开(公告)日：2013-08-01

申请号：US13732628

申请日：2013-01-02

申请人： Seok Hun BAE ,  Seok Beom CHOI ,  Pil Geun KANG ,  Deok Ki HWANG ,  Young Ju HAN ,  Hee Seok CHOI ,  Young Rok PARK ,  Tae Don LEE ,  Hyun Sung OH ,  Jee Hue JOO ,  Dong Woo KANG ,  Sung Sig KIM

发明人： Seok Hun BAE ,  Seok Beom CHOI ,  Pil Geun KANG ,  Deok Ki HWANG ,  Young Ju HAN ,  Hee Seok CHOI ,  Young Rok PARK ,  Tae Don LEE ,  Hyun Sung OH ,  Jee Hue JOO ,  Dong Woo KANG ,  Sung Sig KIM

IPC分类号： H01L33/40

CPC分类号： H01L33/405 ,  H01L33/20 ,  H01L33/382 ,  H01L33/44 ,  H01L33/486 ,  H01L33/62 ,  H01L33/641 ,  H01L2224/14 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2924/01322 ,  H01L2924/1301 ,  H01L2924/00

摘要： Disclosed are a light emitting device, a light emitting device package and a light emitting module. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first and second conductive semiconductor layers; a support member under the light emitting structure; a reflective electrode layer between the second conductive semiconductor layer and the support member; and first to third connection electrodes spaced apart from each other in the support member. The second connection electrode is disposed between the first and third connection electrodes, the first and third connection electrodes are electrically connected with each other, and the support member is disposed at a peripheral portion of the first to third connection electrodes.

摘要翻译： 公开了发光器件，发光器件封装和发光模块。 发光器件包括发光结构，其包括第一导电半导体层，第二导电半导体层和在第一和第二导电半导体层之间的有源层; 在发光结构下的支撑构件; 在所述第二导电半导体层和所述支撑构件之间的反射电极层; 以及在支撑构件中彼此间隔开的第一至第三连接电极。 第二连接电极设置在第一和第三连接电极之间，第一和第三连接电极彼此电连接，并且支撑构件设置在第一至第三连接电极的周边部分。

公开(公告)号：US20130119424A1

公开(公告)日：2013-05-16

申请号：US13677566

申请日：2012-11-15

申请人： Pil Geun KANG ,  Hee Seok CHOI ,  Seok Beom CHOI ,  Ju Won LEE ,  Deok Ki HWANG ,  Young Ju HAN

发明人： Pil Geun KANG ,  Hee Seok CHOI ,  Seok Beom CHOI ,  Ju Won LEE ,  Deok Ki HWANG ,  Young Ju HAN

IPC分类号： H01L33/60

CPC分类号： H01L33/22 ,  H01L33/20 ,  H01L33/40 ,  H01L33/405 ,  H01L33/44 ,  H01L33/50 ,  H01L33/62 ,  H01L33/641 ,  H01L33/642 ,  H01L33/644 ,  H01L2224/16245 ,  H01L2924/01322 ,  H01L2924/00

摘要： A light emitting device is provided a transmissive substrate; a first pattern portion including a protrusions; a second pattern portion including a concaves having a width smaller than a width of each protrusion; a light emitting structure under the transmissive substrate and including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer; a first electrode under the first conductive semiconductor layer; a reflective electrode layer under the second conductive semiconductor layer; a second electrode under the reflective electrode layer; a first connection electrode under the first electrode; a second connection electrode under the second electrode; and an insulating support member around the first electrode and the first connection electrode and around the second electrode and the second connection electrode and including a ceramic-based thermal diffusion agent.

摘要翻译： 发光装置设置有透射基板; 包括突起的第一图案部分; 第二图案部分，其包括宽度小于每个突起的宽度的凹部; 在透射基底下方的发光结构，包括第一导电半导体层，第二导电半导体层和有源层; 在第一导电半导体层下方的第一电极; 第二导电半导体层下方的反射电极层; 反射电极层下方的第二电极; 第一电极下方的第一连接电极; 在第二电极下方的第二连接电极; 以及绝缘支撑构件，其围绕所述第一电极和所述第一连接电极并且围绕所述第二电极和所述第二连接电极并且包括陶瓷基热扩散剂。

公开(公告)号：US20110033965A1

公开(公告)日：2011-02-10

申请号：US12909204

申请日：2010-10-21

申请人： Sang Ho YOON ,  Su Yeol LEE ,  Doo Go BAIK ,  Seok Beom CHOI ,  Tae Sung JANG ,  Jong Gun WOO

发明人： Sang Ho YOON ,  Su Yeol LEE ,  Doo Go BAIK ,  Seok Beom CHOI ,  Tae Sung JANG ,  Jong Gun WOO

IPC分类号： H01L33/44

CPC分类号： H01L33/22 ,  H01L33/0079 ,  H01L33/20

摘要： A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.

摘要翻译： 垂直氮化物基半导体LED包括结构支撑层; 形成在结构支撑层上的p电极; 形成在p电极上的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层; 形成在有源层上的n型氮化物半导体层; 形成在n型氮化物半导体层的一部分上的n电极; 以及形成在其上未形成有n电极的n型氮化物半导体层的区域上的缓冲层，其上形成有凹凸。 与n电极接触的n型氮化物半导体层的表面是平坦的。

公开(公告)号：US20080048206A1

公开(公告)日：2008-02-28

申请号：US11742818

申请日：2007-05-01

申请人： Su Yeol LEE ,  Bang Won OH ,  Doo Go BAIK ,  Tae Sung JANG ,  Jong Gun WOO ,  Seok Beom CHOI ,  Sang Ho YOON ,  Dong Woo KIM ,  In Tae YEO

发明人： Su Yeol LEE ,  Bang Won OH ,  Doo Go BAIK ,  Tae Sung JANG ,  Jong Gun WOO ,  Seok Beom CHOI ,  Sang Ho YOON ,  Dong Woo KIM ,  In Tae YEO

IPC分类号： H01L33/00 ,  H01L21/20

CPC分类号： H01L33/387 ,  H01L33/20 ,  H01L33/22 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of manufacturing a vertical GaN-based LED comprises forming a light emission structure in which an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer are sequentially laminated on a substrate; etching the light emission structure such that the light emission structure is divided into units of LED; forming a p-electrode on each of the divided light emission structures; filling a non-conductive material between the divided light emission structures; forming a metal seed layer on the resulting structure; forming a first plated layer on the metal seed layer excluding a region between the light emission structures; forming a second plated layer on the metal seed layer between the first plated layers; separating the substrate from the light emission structures; removing the non-conductive material between the light emission structures exposed by separating the substrate; forming an n-electrode on the n-type GaN-based semiconductor layer; and removing portions of the metal seed layer and the second plated layer between the light emission structures.

摘要翻译： 制造垂直GaN基LED的方法包括：形成其中n型GaN基半导体层，有源层和p型GaN基半导体层依次层压在基板上的发光结构; 蚀刻发光结构，使得发光结构被分为LED单元; 在每个划分的发光结构上形成p电极; 在分开的发光结构之间填充非导电材料; 在所得结构上形成金属种子层; 在所述金属种子层上形成除了所述发光结构之间的区域的第一镀层; 在所述第一镀层之间的所述金属种子层上形成第二镀层; 将衬底与发光结构分离; 去除通过分离衬底而暴露的发光结构之间的非导电材料; 在n型GaN基半导体层上形成n电极; 以及去除所述发光结构之间的所述金属种子层和所述第二镀层的部分。

公开(公告)号：US20140361243A1

公开(公告)日：2014-12-11

申请号：US14296147

申请日：2014-06-04

申请人： Seok Beom CHOI

发明人： Seok Beom CHOI

IPC分类号： H01L33/06 ,  H01L33/30 ,  H01L33/40

CPC分类号： H01L33/405 ,  H01L33/20 ,  H01L33/30 ,  H01L33/38 ,  H01L33/62 ,  H01L2224/16245

摘要： A light emitting device includes at least one layer below or above a reflective layer to prevent delamination of the reflective layer from a layer below and/or above the reflective layer.

摘要翻译： 发光器件包括在反射层下面或上方的至少一个层，以防止反射层从反射层下面和/或上方的层分层。

公开(公告)号：US20080042149A1

公开(公告)日：2008-02-21

申请号：US11692568

申请日：2007-03-28

申请人： Sang Ho YOON ,  Su Yeol LEE ,  Doo Go BAIK ,  Seok Beom CHOI ,  Tae Sung JANG ,  Jong Gun WOO

发明人： Sang Ho YOON ,  Su Yeol LEE ,  Doo Go BAIK ,  Seok Beom CHOI ,  Tae Sung JANG ,  Jong Gun WOO

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/0079 ,  H01L33/20

摘要： A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.

摘要翻译： 垂直氮化物基半导体LED包括结构支撑层; 形成在结构支撑层上的p电极; 形成在p电极上的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层; 形成在有源层上的n型氮化物半导体层; 形成在n型氮化物半导体层的一部分上的n电极; 以及形成在其上未形成有n电极的n型氮化物半导体层的区域上的缓冲层，其上形成有凹凸。 与n电极接触的n型氮化物半导体层的表面是平坦的。

公开(公告)号：US20110053298A1

公开(公告)日：2011-03-03

申请号：US12909297

申请日：2010-10-21

申请人： Sang Ho YOON ,  Su Yeol LEE ,  Doo Go BAIK ,  Seok Beom CHOI ,  Tae Sung JANG ,  Jong Gun WOO

发明人： Sang Ho YOON ,  Su Yeol LEE ,  Doo Go BAIK ,  Seok Beom CHOI ,  Tae Sung JANG ,  Jong Gun WOO

IPC分类号： H01L33/22 ,  H01L33/48

CPC分类号： H01L33/22 ,  H01L33/0079 ,  H01L33/20

摘要： A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.