公开(公告)号：US5277725A

公开(公告)日：1994-01-11

申请号：US881448

申请日：1992-05-11

申请人： John Acocella ,  Peter A. Agostino ,  Arnold I. Baise ,  Richard A. Bates ,  Ray M. Bryant ,  Jon A. Casey ,  David R. Clarke ,  George Czornyj ,  Allen J. Dam ,  Lawrence D. David ,  Renuka S. Divakaruni ,  Werner E. Dunkel ,  Ajay P. Giri ,  Liang-Choo Hsia ,  James N. Humenik ,  Steven M. Kandetzke ,  Daniel P. Kirby ,  John U. Knickerbocker ,  Sarah H. Knickerbocker ,  Anthony Mastreani ,  Amy T. Matts ,  Robert W. Nufer ,  Charles H. Perry ,  Srinivasa S. N. Reddy ,  Salvatore J. Scilla ,  Mark A. Takacs ,  Lovell B. Wiggins

发明人： John Acocella ,  Peter A. Agostino ,  Arnold I. Baise ,  Richard A. Bates ,  Ray M. Bryant ,  Jon A. Casey ,  David R. Clarke ,  George Czornyj ,  Allen J. Dam ,  Lawrence D. David ,  Renuka S. Divakaruni ,  Werner E. Dunkel ,  Ajay P. Giri ,  Liang-Choo Hsia ,  James N. Humenik ,  Steven M. Kandetzke ,  Daniel P. Kirby ,  John U. Knickerbocker ,  Sarah H. Knickerbocker ,  Anthony Mastreani ,  Amy T. Matts ,  Robert W. Nufer ,  Charles H. Perry ,  Srinivasa S. N. Reddy ,  Salvatore J. Scilla ,  Mark A. Takacs ,  Lovell B. Wiggins

IPC分类号： H05K1/03 ,  C04B41/48 ,  C04B41/49 ,  H01L21/48 ,  H01L23/08 ,  H01L23/538 ,  H05K3/40 ,  C04B37/00 ,  B05D5/12

CPC分类号： H01L21/4857 ,  C04B41/488 ,  C04B41/4961 ,  H01L23/5383 ,  H05K3/4061 ,  C04B2111/00672 ,  C04B2111/00844 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/12044 ,  H05K1/0306 ,  H05K2201/09581 ,  H05K2203/1147 ,  H05K2203/308

摘要： The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addressed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.

摘要翻译： 在金属的热循环过程中经历的裂纹：电介质半导体封装是由热膨胀系数不匹配引起的。 与这种开裂相关的非气密性可以通过用柔性材料回填可渗透裂缝来解决。 金属和电介质材料之间的均匀间隙可以类似地填充柔性材料，以提供应力消除，体积可压缩性和包装的强度。 此外，可渗透的骨架电介质可以被制造为具有烧结冶金的烧结多层结构，并随后注入柔性的温度稳定的材料以提供气密性和强度。

公开(公告)号：US4808365A

公开(公告)日：1989-02-28

申请号：US199214

申请日：1988-05-26

申请人： Benedikt M. J. Kellner ,  Salvatore J. Scilla

发明人： Benedikt M. J. Kellner ,  Salvatore J. Scilla

IPC分类号： C04B35/632 ,  C04B35/64 ,  H05K1/03 ,  H05K3/46 ,  B29C71/00 ,  C04B41/81 ,  F26B21/08 ,  F27D7/02

CPC分类号： C04B35/632 ,  C04B35/64 ,  H05K1/0306 ,  H05K3/4611 ,  H05K3/4629 ,  Y10S264/39

摘要： A process for reducing edge curl in green sheets in which the sheets are first placed in a chamber at about 95% relative humidity for a period of about 2 weeks at room temperature. In this part of the process, the sheets absorb water which causes the internal stresses in the green sheet to relax. Thereafter, the sheets are dried by placing them in a chamber at about 35% relative humidity for a period of about 1 week at room temperature. In this period, the absorbed water evaporates and the green sheets become firm with less edge curl than they exhibited prior to the treatment.

摘要翻译： 一种用于减少生坯中边缘卷曲的方法，其中片材首先在室温下以约95％相对湿度放置在室中约2周的时间。 在该部分工艺中，片材吸收水，导致生片中的内部应力松弛。 此后，通过将片材在室温下以约35％的相对湿度放置在室中干燥约1周的时间。 在这个时期，吸收的水蒸发，绿色片材变得坚固，边缘卷曲比治疗前显示的少。

公开(公告)号：US5139852A

公开(公告)日：1992-08-18

申请号：US503492

申请日：1990-03-30

申请人： Arnold I. Baise ,  Ray M. Bryant ,  Jon A. Casey ,  Allen J. Dam ,  Werner E. Dunkel ,  James N. Humenik ,  Anthony Mastreani ,  Robert W. Nufer ,  Charles H. Perry ,  Salvatore J. Scilla

发明人： Arnold I. Baise ,  Ray M. Bryant ,  Jon A. Casey ,  Allen J. Dam ,  Werner E. Dunkel ,  James N. Humenik ,  Anthony Mastreani ,  Robert W. Nufer ,  Charles H. Perry ,  Salvatore J. Scilla

IPC分类号： C04B41/48 ,  C04B41/49 ,  H01L21/48 ,  H01L23/538 ,  H05K1/03 ,  H05K3/40

CPC分类号： H01L23/5383 ,  C04B41/488 ,  C04B41/4961 ,  H01L21/4857 ,  H05K3/4061 ,  H01L2924/0002 ,  H01L2924/09701 ,  H05K1/0306 ,  H05K2201/09581 ,  H05K2203/1147 ,  H05K2203/308 ,  Y10S428/901 ,  Y10T428/24917 ,  Y10T428/24926

摘要： The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addressed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.

摘要翻译： 在金属的热循环过程中经历的裂纹：电介质半导体封装是由热膨胀系数不匹配引起的。 与这种开裂相关的非气密性可以通过用柔性材料回填可渗透裂缝来解决。 金属和电介质材料之间的均匀间隙可以类似地填充柔性材料，以提供应力消除，体积可压缩性和包装的强度。 此外，可渗透的骨架电介质可以被制造为具有烧结冶金的烧结多层结构，并随后注入柔性的温度稳定的材料以提供气密性和强度。

公开(公告)号：US5135595A

公开(公告)日：1992-08-04

申请号：US503495

申请日：1990-03-30

申请人： John Acocella ,  Peter A. Agostino ,  Arnold I. Baise ,  Richard A. Bates ,  Ray M. Bryant ,  Jon A. Casey ,  David R. Clarke ,  George Czornyj ,  Allen J. Dam ,  Lawrence D. David ,  Renuka S. Divakaruni ,  Werner E. Dunkel ,  Ajay P. Giri ,  Liang-Choo Hsia ,  James N. Humenik ,  Steven M. Kandetzke ,  Daniel P. Kirby ,  John U. Knickerbocker ,  Sarah H. Knickerbocker ,  Anthony Mastreani ,  Amy T. Matts ,  Robert W. Nufer ,  Charles H. Perry ,  Srinivasa S. N. Reddy ,  Salvatore J. Scilla ,  Mark A. Takacs ,  Lovell B. Wiggins

发明人： John Acocella ,  Peter A. Agostino ,  Arnold I. Baise ,  Richard A. Bates ,  Ray M. Bryant ,  Jon A. Casey ,  David R. Clarke ,  George Czornyj ,  Allen J. Dam ,  Lawrence D. David ,  Renuka S. Divakaruni ,  Werner E. Dunkel ,  Ajay P. Giri ,  Liang-Choo Hsia ,  James N. Humenik ,  Steven M. Kandetzke ,  Daniel P. Kirby ,  John U. Knickerbocker ,  Sarah H. Knickerbocker ,  Anthony Mastreani ,  Amy T. Matts ,  Robert W. Nufer ,  Charles H. Perry ,  Srinivasa S. N. Reddy ,  Salvatore J. Scilla ,  Mark A. Takacs ,  Lovell B. Wiggins

IPC分类号： H05K1/03 ,  C04B41/48 ,  C04B41/49 ,  H01L21/48 ,  H01L23/08 ,  H01L23/538 ,  H05K3/40

CPC分类号： H01L21/4857 ,  C04B41/488 ,  C04B41/4961 ,  H01L23/5383 ,  H05K3/4061 ,  C04B2111/00672 ,  C04B2111/00844 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/12044 ,  H05K1/0306 ,  H05K2201/09581 ,  H05K2203/1147 ,  H05K2203/308

摘要： The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addresssed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.