公开(公告)号：US5277725A

公开(公告)日：1994-01-11

申请号：US881448

申请日：1992-05-11

申请人： John Acocella ,  Peter A. Agostino ,  Arnold I. Baise ,  Richard A. Bates ,  Ray M. Bryant ,  Jon A. Casey ,  David R. Clarke ,  George Czornyj ,  Allen J. Dam ,  Lawrence D. David ,  Renuka S. Divakaruni ,  Werner E. Dunkel ,  Ajay P. Giri ,  Liang-Choo Hsia ,  James N. Humenik ,  Steven M. Kandetzke ,  Daniel P. Kirby ,  John U. Knickerbocker ,  Sarah H. Knickerbocker ,  Anthony Mastreani ,  Amy T. Matts ,  Robert W. Nufer ,  Charles H. Perry ,  Srinivasa S. N. Reddy ,  Salvatore J. Scilla ,  Mark A. Takacs ,  Lovell B. Wiggins

发明人： John Acocella ,  Peter A. Agostino ,  Arnold I. Baise ,  Richard A. Bates ,  Ray M. Bryant ,  Jon A. Casey ,  David R. Clarke ,  George Czornyj ,  Allen J. Dam ,  Lawrence D. David ,  Renuka S. Divakaruni ,  Werner E. Dunkel ,  Ajay P. Giri ,  Liang-Choo Hsia ,  James N. Humenik ,  Steven M. Kandetzke ,  Daniel P. Kirby ,  John U. Knickerbocker ,  Sarah H. Knickerbocker ,  Anthony Mastreani ,  Amy T. Matts ,  Robert W. Nufer ,  Charles H. Perry ,  Srinivasa S. N. Reddy ,  Salvatore J. Scilla ,  Mark A. Takacs ,  Lovell B. Wiggins

IPC分类号： H05K1/03 ,  C04B41/48 ,  C04B41/49 ,  H01L21/48 ,  H01L23/08 ,  H01L23/538 ,  H05K3/40 ,  C04B37/00 ,  B05D5/12

CPC分类号： H01L21/4857 ,  C04B41/488 ,  C04B41/4961 ,  H01L23/5383 ,  H05K3/4061 ,  C04B2111/00672 ,  C04B2111/00844 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/12044 ,  H05K1/0306 ,  H05K2201/09581 ,  H05K2203/1147 ,  H05K2203/308

摘要： The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addressed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.

摘要翻译： 在金属的热循环过程中经历的裂纹：电介质半导体封装是由热膨胀系数不匹配引起的。 与这种开裂相关的非气密性可以通过用柔性材料回填可渗透裂缝来解决。 金属和电介质材料之间的均匀间隙可以类似地填充柔性材料，以提供应力消除，体积可压缩性和包装的强度。 此外，可渗透的骨架电介质可以被制造为具有烧结冶金的烧结多层结构，并随后注入柔性的温度稳定的材料以提供气密性和强度。

公开(公告)号：US5135595A

公开(公告)日：1992-08-04

申请号：US503495

申请日：1990-03-30

申请人： John Acocella ,  Peter A. Agostino ,  Arnold I. Baise ,  Richard A. Bates ,  Ray M. Bryant ,  Jon A. Casey ,  David R. Clarke ,  George Czornyj ,  Allen J. Dam ,  Lawrence D. David ,  Renuka S. Divakaruni ,  Werner E. Dunkel ,  Ajay P. Giri ,  Liang-Choo Hsia ,  James N. Humenik ,  Steven M. Kandetzke ,  Daniel P. Kirby ,  John U. Knickerbocker ,  Sarah H. Knickerbocker ,  Anthony Mastreani ,  Amy T. Matts ,  Robert W. Nufer ,  Charles H. Perry ,  Srinivasa S. N. Reddy ,  Salvatore J. Scilla ,  Mark A. Takacs ,  Lovell B. Wiggins

发明人： John Acocella ,  Peter A. Agostino ,  Arnold I. Baise ,  Richard A. Bates ,  Ray M. Bryant ,  Jon A. Casey ,  David R. Clarke ,  George Czornyj ,  Allen J. Dam ,  Lawrence D. David ,  Renuka S. Divakaruni ,  Werner E. Dunkel ,  Ajay P. Giri ,  Liang-Choo Hsia ,  James N. Humenik ,  Steven M. Kandetzke ,  Daniel P. Kirby ,  John U. Knickerbocker ,  Sarah H. Knickerbocker ,  Anthony Mastreani ,  Amy T. Matts ,  Robert W. Nufer ,  Charles H. Perry ,  Srinivasa S. N. Reddy ,  Salvatore J. Scilla ,  Mark A. Takacs ,  Lovell B. Wiggins

IPC分类号： H05K1/03 ,  C04B41/48 ,  C04B41/49 ,  H01L21/48 ,  H01L23/08 ,  H01L23/538 ,  H05K3/40

CPC分类号： H01L21/4857 ,  C04B41/488 ,  C04B41/4961 ,  H01L23/5383 ,  H05K3/4061 ,  C04B2111/00672 ,  C04B2111/00844 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/12044 ,  H05K1/0306 ,  H05K2201/09581 ,  H05K2203/1147 ,  H05K2203/308

摘要： The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addresssed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.

公开(公告)号：US5139851A

公开(公告)日：1992-08-18

申请号：US503493

申请日：1990-03-30

申请人： John Acocella ,  Arnold I. Baise ,  Richard A. Bates ,  Jon A. Casey ,  David R. Clarke ,  Renuka S. Divakaruni ,  James N. Humenik ,  Steven M. Kandetzke ,  Daniel P. Kirby ,  John U. Knickerbocker ,  Sarah H. Knickerbocker ,  Amy T. Matts ,  Robert W. Nufer ,  Srinivasa S. N. Reddy ,  Mark A. Takacs ,  Lovell B. Wiggins

发明人： John Acocella ,  Arnold I. Baise ,  Richard A. Bates ,  Jon A. Casey ,  David R. Clarke ,  Renuka S. Divakaruni ,  James N. Humenik ,  Steven M. Kandetzke ,  Daniel P. Kirby ,  John U. Knickerbocker ,  Sarah H. Knickerbocker ,  Amy T. Matts ,  Robert W. Nufer ,  Srinivasa S. N. Reddy ,  Mark A. Takacs ,  Lovell B. Wiggins

IPC分类号： C04B41/48 ,  C04B41/49 ,  H01L21/48 ,  H01L23/538 ,  H05K1/03 ,  H05K3/40

CPC分类号： C04B41/4961 ,  C04B41/488 ,  H01L21/4857 ,  H01L23/5383 ,  H05K3/4061 ,  H01L2924/0002 ,  H01L2924/09701 ,  H05K1/0306 ,  H05K2201/09581 ,  H05K2203/1147 ,  H05K2203/308 ,  Y10S428/901 ,  Y10T428/24917 ,  Y10T428/24926

摘要： The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addressed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.

公开(公告)号：US5139852A

公开(公告)日：1992-08-18

申请号：US503492

申请日：1990-03-30

申请人： Arnold I. Baise ,  Ray M. Bryant ,  Jon A. Casey ,  Allen J. Dam ,  Werner E. Dunkel ,  James N. Humenik ,  Anthony Mastreani ,  Robert W. Nufer ,  Charles H. Perry ,  Salvatore J. Scilla

发明人： Arnold I. Baise ,  Ray M. Bryant ,  Jon A. Casey ,  Allen J. Dam ,  Werner E. Dunkel ,  James N. Humenik ,  Anthony Mastreani ,  Robert W. Nufer ,  Charles H. Perry ,  Salvatore J. Scilla

IPC分类号： C04B41/48 ,  C04B41/49 ,  H01L21/48 ,  H01L23/538 ,  H05K1/03 ,  H05K3/40

CPC分类号： H01L23/5383 ,  C04B41/488 ,  C04B41/4961 ,  H01L21/4857 ,  H05K3/4061 ,  H01L2924/0002 ,  H01L2924/09701 ,  H05K1/0306 ,  H05K2201/09581 ,  H05K2203/1147 ,  H05K2203/308 ,  Y10S428/901 ,  Y10T428/24917 ,  Y10T428/24926

摘要： The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addressed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.

摘要翻译： 在金属的热循环过程中经历的裂纹：电介质半导体封装是由热膨胀系数不匹配引起的。 与这种开裂相关的非气密性可以通过用柔性材料回填可渗透裂缝来解决。 金属和电介质材料之间的均匀间隙可以类似地填充柔性材料，以提供应力消除，体积可压缩性和包装的强度。 此外，可渗透的骨架电介质可以被制造为具有烧结冶金的烧结多层结构，并随后注入柔性的温度稳定的材料以提供气密性和强度。

公开(公告)号：US4339526A

公开(公告)日：1982-07-13

申请号：US276850

申请日：1981-06-24

申请人： Arnold I. Baise ,  George Czornyj ,  Anthony W. Wu

发明人： Arnold I. Baise ,  George Czornyj ,  Anthony W. Wu

IPC分类号： H01L23/29 ,  G03F7/025 ,  G03F7/09 ,  G03F7/11 ,  H01L21/027 ,  H01L21/312 ,  H01L23/31 ,  H01L21/94

CPC分类号： H01L21/312 ,  G03F7/025

摘要： A protective coating is formed on an integrated circuit device by coating the device with a solution of acetylene terminated, branched polyphenylene prepolymer material and heating the material to form a thermoset crosslinked polymer layer. Selectively patterned portions may be provided when, after the coating step and prior to the heating step, the steps of imagewise exposure to radiation and rinsing with an organic solvent are carried out.

摘要翻译： 通过用乙炔封端的支化聚亚苯基预聚物材料的溶液涂覆该器件并加热该材料以形成热固性交联聚合物层，在集成电路器件上形成保护涂层。 可以在涂布步骤之后并且在加热步骤之前，进行成像曝光和用有机溶剂冲洗的步骤。

公开(公告)号：US4371565A

公开(公告)日：1983-02-01

申请号：US299273

申请日：1981-09-04

申请人： Arnold I. Baise ,  John M. Burns ,  Harbans S. Sachdev

发明人： Arnold I. Baise ,  John M. Burns ,  Harbans S. Sachdev

IPC分类号： C23C14/02 ,  B05D7/24 ,  C08F2/52 ,  C08F30/02 ,  C08J7/00 ,  C23C14/04 ,  H01L21/312 ,  B05D3/06

CPC分类号： B05D1/62 ,  C08F2/52 ,  C08F30/02

摘要： The adhesion of organic resins to substrate materials is increased by depositing on the substrate a coating of a plasma polymerized unsaturated organophosphine.

摘要翻译： 通过在基板上沉积等离子体聚合的不饱和有机膦的涂层，增加了有机树脂对基材的粘合性。

公开(公告)号：US4507333A

公开(公告)日：1985-03-26

申请号：US443251

申请日：1982-11-22

申请人： Arnold I. Baise ,  Anthony W. Wu

发明人： Arnold I. Baise ,  Anthony W. Wu

IPC分类号： C07D241/38 ,  B32B27/00 ,  C07D241/36 ,  C07D241/42 ,  C07D241/44 ,  C08G73/00 ,  C08G73/06 ,  H01B3/30 ,  H01L21/312 ,  B05D3/02 ,  B05D5/12 ,  C08G69/08

CPC分类号： H01B3/303 ,  C08G73/0694 ,  H01L21/312

摘要： An insulating or masking film for semiconductor devices formed by curing applied coatings of biphenylene end-capped quinoxaline polymers.

摘要翻译： 用于通过固化亚联苯封端的喹喔啉聚合物的涂覆形成的用于半导体器件的绝缘或掩蔽膜。