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    Photo mask of semiconductor device and method for manufacturing the same
    1.
    发明授权
    Photo mask of semiconductor device and method for manufacturing the same 失效
    半导体器件的光掩模及其制造方法

    公开(公告)号：US06296975B1

    公开(公告)日：2001-10-02

    申请号：US09426762

    申请日：1999-10-26

    申请人： Seong-yong Moon ,  Yong-hoon Kim ,  Kwang-soo No

    发明人： Seong-yong Moon ,  Yong-hoon Kim ,  Kwang-soo No

    IPC分类号： G03F900

    CPC分类号： G03F1/54

    摘要： A photo mask of a semiconductor device includes a transmission preventing layer formed of a molybdenum alloy, which is a solid solution of a metal atom such as chrome in molybdenum, on a light transmitting substrate. Also, the molybdenum alloy may be a molybdenum vanadium alloy, a molybdenum niobium alloy, a molybdenum tantalum alloy, or a molybdenum tungsten alloy, which is a solid solution of vanadium, niobium, tantalum, or tungsten in molybdenum, respectively. The photo mask provides high resolution during a photolithography process by obtaining a thinner transmission preventing layer.

    摘要翻译： 半导体器件的光掩模包括由钼合金形成的防透光层，其是钼等金属原子的固溶体在透光性基板上。 此外，钼合金可以分别是钼中的钒，铌，钽或钨的固溶体的钼钒合金，钼铌合金，钼钽合金或钼钨合金。 光掩模通过获得较薄的防止传播层在光刻过程中提供高分辨率。

    Method of fabricating phase shift mask
    2.
    发明授权
    Method of fabricating phase shift mask 失效
    制造相移掩模的方法

    公开(公告)号：US06333129B2

    公开(公告)日：2001-12-25

    申请号：US09295352

    申请日：1999-04-21

    申请人： Yong-hoon Kim ,  Jin-hong Park

    发明人： Yong-hoon Kim ,  Jin-hong Park

    IPC分类号： G03F900

    CPC分类号： G03F1/29

    摘要： A method of fabricating a phase shift mask is provided in which light shield film patterns for setting a phase shift region and a phase non-shift region are simultaneously formed on a substrate. A groove is formed in the substrate set as the phase shift region. The light shield film pattern, which contacts the groove and is formed on a region of the substrate set as the phase non-shift region, is removed. A phase shift layer can be formed between the substrate and the light shield film pattern. In this case, regions set by the light shield film pattern become opposite to when the phase shift layer is not formed. That is, a phase shift region is changed into a phase non-shift region, and the phase non-shift region is changed into the phase shift region. As described above, the phase shift region and the phase non-shift region are simultaneously set when the light shield film pattern is formed, thus preventing the position of the phase shift or non-shift region from being shifted due to sequential formation of the phase shift and non-shift regions.

    摘要翻译： 提供一种制造相移掩模的方法，其中在衬底上同时形成用于设置相移区域和相位非移位区域的光屏蔽膜图案。 在衬底组中形成有作为相移区域的沟槽。 除去接触凹槽并形成在作为相位非移位区域的基板的区域上的遮光膜图案。 可以在基板和遮光膜图案之间形成相移层。 在这种情况下，由遮光膜图案设定的区域与没有形成相移层时相反。 也就是说，相移区域被改变为相位非移位区域，并且相位非移位区域变为相移区域。 如上所述，当形成遮光膜图形时，相移区域和相位非移位区域被同时设置，从而防止相移或非移位区域的位置由于相位的顺序形成而偏移 移位和非移位区域。

    Non-volatile memory devices suitable for LCD driver applications
    5.
    发明授权
    Non-volatile memory devices suitable for LCD driver applications 有权
    非易失性存储器件适用于LCD驱动器应用

    公开(公告)号：US07547940B2

    公开(公告)日：2009-06-16

    申请号：US11623829

    申请日：2007-01-17

    申请人： Yong-hoon Kim

    发明人： Yong-hoon Kim

    IPC分类号： H01L29/788

    CPC分类号： H01L27/115 ,  H01L27/11519

    摘要： Non-volatile memory devices according to embodiments of the present invention include an EEPROM transistor in a first portion of a semiconductor substrate, an access transistor in a second portion of the semiconductor substrate and an erase transistor in a third portion of the semiconductor substrate. The second portion of the semiconductor substrate extends adjacent a first side of the first portion of the semiconductor substrate and the third portion of the semiconductor substrate extends adjacent a second side of the first portion of the semiconductor substrate. The first and second sides of the first portion of the semiconductor substrate may be opposite sides of the first portion of the semiconductor substrate. The access transistor has a first source/drain terminal electrically connected to a first source/drain terminal of the EEPROM transistor and the erase transistor has a first source/drain terminal electrically connected to a second source/drain terminal of the access transistor.

    摘要翻译： 根据本发明的实施例的非易失性存储器件包括在半导体衬底的第一部分中的EEPROM晶体管，半导体衬底的第二部分中的存取晶体管和半导体衬底的第三部分中的擦除晶体管。 半导体衬底的第二部分在半导体衬底的第一部分的第一侧附近延伸，并且半导体衬底的第三部分相邻于半导体衬底的第一部分的第二侧延伸。 半导体衬底的第一部分的第一和第二侧可以是半导体衬底的第一部分的相对侧。 存取晶体管具有电连接到EEPROM晶体管的第一源极/漏极端子的第一源极/漏极端子，并且擦除晶体管具有电连接到存取晶体管的第二源极/漏极端子的第一源极/漏极端子。

    Optical system using optical signal and solid state drive module using the optical signal
    9.
    发明申请
    Optical system using optical signal and solid state drive module using the optical signal 审中-公开
    光系统使用光信号和固态驱动模块使用光信号

    公开(公告)号：US20110008048A1

    公开(公告)日：2011-01-13

    申请号：US12662674

    申请日：2010-04-28

    申请人： Yong-hoon Kim ,  Hee-Seok Lee

    发明人： Yong-hoon Kim ,  Hee-Seok Lee

    IPC分类号： H04B10/00 ,  H04J14/02

    CPC分类号： H04J14/0283 ,  H04J14/0201

    摘要： An optical system and an SSD module that maintain optimal SI, PI and EMI characteristics without a shield based on a ground voltage and an impedance match. The optical system includes a solid state drive (SSD) module and an input/output (I/O) interface. The SSD module includes a plurality of solid state memory units. The input/output (I/O) interface receives data to be written to at least one of the solid state memory units from a main memory unit, the input/output (I/O) interface transmits data written in at least one of the solid state memory units to the main memory unit. The SSD module and the I/O interface transmit and receive data using an optical medium.

    摘要翻译： 一种光学系统和一个SSD模块，可以根据接地电压和阻抗匹配保持最佳的SI，PI和EMI特性，而不需要屏蔽。 光学系统包括固态驱动器（SSD）模块和输入/输出（I / O）接口。 SSD模块包括多个固态存储器单元。 输入/输出（I / O）接口从主存储器单元接收要写入至少一个固态存储器单元的数据，输入/输出（I / O）接口发送写入至少一个 固态存储器单元到主存储器单元。 SSD模块和I / O接口使用光学介质发送和接收数据。