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    Suspended getter material-based structure
    1.
    发明授权
    Suspended getter material-based structure 有权
    悬浮吸气剂材料结构

    公开(公告)号：US09260291B2

    公开(公告)日：2016-02-16

    申请号：US12494147

    申请日：2009-06-29

    申请人： Stephane Caplet ,  Xavier Baillin

    发明人： Stephane Caplet ,  Xavier Baillin

    IPC分类号： B32B3/24 ,  H01L23/00 ,  B81B7/00 ,  H01L23/26

    CPC分类号： B81B7/0038 ,  H01L23/26 ,  H01L2924/0002 ,  Y10T428/24331 ,  Y10T428/24612 ,  H01L2924/00

    摘要： Getter structure comprising a substrate and at least one getter material-based layer mechanically connected to the substrate by means of at least one support, in which the surface of the support in contact with the substrate is smaller than the surface of a first face of the getter material layer, in which said first face is in contact with the support, and a second face of the getter material layer, opposite said first face is at least partially exposed.

    摘要翻译： 吸气体结构包括基底和至少一个通过至少一个支撑件机械地连接到基底的吸气剂材料层，其中与衬底接触的支撑体的表面小于第一面的表面 吸气剂材料层，其中所述第一面与支撑体接触，吸气剂材料层的与所述第一面相对的第二面至少部分地露出。

    Vent Closing Method And The Use Of An Ultrasonic Bonding Machine For Carrying Out The Method
    2.
    发明申请
    Vent Closing Method And The Use Of An Ultrasonic Bonding Machine For Carrying Out The Method 审中-公开
    通风口关闭方法及超声波接合机的使用方法

    公开(公告)号：US20080000948A1

    公开(公告)日：2008-01-03

    申请号：US11587241

    申请日：2005-05-03

    申请人： Henri Blanc ,  Stephane Caplet

    发明人： Henri Blanc ,  Stephane Caplet

    IPC分类号： B23K20/10

    CPC分类号： B81C1/00293 ,  B81C2203/0145 ,  H01L21/67138 ,  H01L24/85 ,  H01L2924/00014 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

    摘要： The inventive method for closing a vent (9) formed in a microstructure (3) wall (10) under a controlled atmosphere is carried out by an ultrasonic bonding machine comprising a welding electrode (14), a metal wire (13) crossing the electrode (14) and a working table (15). A ball (12) is formed by melting on the end part of the metal wire (13) and is deposited on the end of the vent (9) and a holding plug (11) and is subsequently exposed to compression forces (F) and ultrasonic vibration (Fus) by the electrode (14) in a controlled atmosphere chamber (17).

    摘要翻译： 在受控气氛下封闭在微结构（3）壁（10）中形成的通风口（9）的本发明方法通过包括焊接电极（14），与电极交叉的金属线（13）的超声波接合机 （14）和工作台（15）。 通过在金属线（13）的端部上熔化而形成球（12），并且沉积在通气孔（9）的端部和保持塞（11）上，随后暴露于压缩力（F）和 在受控的气氛室（17）中由电极（14）进行超声波振动（F> us）。

    METHOD OF ENCAPSULATING A MICROELECTRONIC DEVICE BY A GETTER MATERIAL
    3.
    发明申请
    METHOD OF ENCAPSULATING A MICROELECTRONIC DEVICE BY A GETTER MATERIAL 有权
    通过材料封装微电子器件的方法

    公开(公告)号：US20100003789A1

    公开(公告)日：2010-01-07

    申请号：US12494123

    申请日：2009-06-29

    申请人： Stephane CAPLET ,  Xavier Baillin ,  Jean-Louis Pornin

    发明人： Stephane CAPLET ,  Xavier Baillin ,  Jean-Louis Pornin

    IPC分类号： H01L21/56

    CPC分类号： B81C1/00285 ,  B81C2203/0136 ,  B81C2203/0145

    摘要： A method of encapsulating a microelectronic device arranged on a substrate, comprising at least the following steps: a) formation of a portion of sacrificial material covering at least one part of the microelectronic device, the volume of which occupies a space intended to form at least one part of a cavity in which the device is intended to be encapsulated; b) deposition of a layer based on at least one getter material, covering at least one part of the portion of sacrificial material; c) formation of at least one orifice through at least the layer of getter material, forming an access to the portion of sacrificial material; d) elimination of the portion of sacrificial material via the orifice, forming the cavity in which the microelectronic device is encapsulated; and e) sealing of the cavity.

    摘要翻译： 一种封装布置在衬底上的微电子器件的方法，至少包括以下步骤：a）形成覆盖微电子器件的至少一部分的牺牲材料的一部分，其体积占据至少形成的空间 腔体的一部分，其中装置旨在被包封; b）沉积基于至少一种吸气材料的层，覆盖牺牲材料部分的至少一部分; c）通过至少所述吸气材料层形成至少一个孔口，形成对所述牺牲材料部分的通路; d）通过孔口消除部分牺牲材料，形成其中封装有微电子器件的腔体; 和e）密封腔。

    Method of encapsulating a microelectronic device by a getter material
    4.
    发明授权
    Method of encapsulating a microelectronic device by a getter material 有权
    通过吸气材料封装微电子器件的方法

    公开(公告)号：US09309110B2

    公开(公告)日：2016-04-12

    申请号：US12494123

    申请日：2009-06-29

    申请人： Stephane Caplet ,  Xavier Baillin ,  Jean-Louis Pornin

    发明人： Stephane Caplet ,  Xavier Baillin ,  Jean-Louis Pornin

    IPC分类号： H01L21/00 ,  B81C1/00

    CPC分类号： B81C1/00285 ,  B81C2203/0136 ,  B81C2203/0145

    摘要： A method of encapsulating a microelectronic device arranged on a substrate, comprising at least the following steps: a) formation of a portion of sacrificial material covering at least one part of the microelectronic device, the volume of which occupies a space intended to form at least one part of a cavity in which the device is intended to be encapsulated; b) deposition of a layer based on at least one getter material, covering at least one part of the portion of sacrificial material; c) formation of at least one orifice through at least the layer of getter material, forming an access to the portion of sacrificial material; d) elimination of the portion of sacrificial material via the orifice, forming the cavity in which the microelectronic device is encapsulated; and e) sealing of the cavity.

    摘要翻译： 一种封装布置在衬底上的微电子器件的方法，至少包括以下步骤：a）形成覆盖微电子器件的至少一部分的牺牲材料的一部分，其体积占据至少形成的空间 腔体的一部分，其中装置旨在被包封; b）沉积基于至少一种吸气材料的层，覆盖牺牲材料部分的至少一部分; c）通过至少所述吸气材料层形成至少一个孔口，形成对所述牺牲材料部分的通路; d）通过孔口消除部分牺牲材料，形成其中封装有微电子器件的腔体; 和e）密封腔。

    METHOD FOR PRODUCING A MICROMECHANICAL AND/OR NANOMECHANICAL DEVICE WITH ANTI-BONDING STOPS
    6.
    发明申请
    METHOD FOR PRODUCING A MICROMECHANICAL AND/OR NANOMECHANICAL DEVICE WITH ANTI-BONDING STOPS 有权
    用于生产具有抗粘连的微机械和/或纳米器件的方法

    公开(公告)号：US20090170312A1

    公开(公告)日：2009-07-02

    申请号：US12336317

    申请日：2008-12-16

    申请人： Stephane Caplet

    发明人： Stephane Caplet

    IPC分类号： H01L21/477

    CPC分类号： B81B3/001

    摘要： A method for producing a micromechanical and/or nanomechanical device comprising the steps of:partial etching of at least one sacrificial layer arranged between a first layer and a substrate, forming at least one cavity in which is arranged at least one portion of the sacrificial layer in contact with the first layer and/or the substrate,chemical transformation of at least one wall of the first layer and/or the substrate in the cavity, delimiting at least one stop in the first layer and/or the substrate at the level of the portion of the sacrificial layer,elimination of said portion of the sacrificial layer and the chemically transformed wall of the first layer and/or the substrate.

    摘要翻译： 一种用于制造微机械和/或纳米机械装置的方法，包括以下步骤：部分蚀刻布置在第一层和衬底之间的至少一个牺牲层，形成至少一个空腔，其中至少一部分牺牲层 与第一层和/或衬底接触，在空腔中的第一层和/或衬底的至少一个壁的化学转化，在第一层和/或衬底中的至少一个挡块上限定 牺牲层的部分，牺牲层的所述部分的消除以及第一层和/或衬底的化学转化的壁。

    ALIGNMENT LAYER OF LIQUID CRYSTALS DEPOSITED AND RUBBED BEFORE MAKING MICROSTRUCTURES
    8.
    发明申请
    ALIGNMENT LAYER OF LIQUID CRYSTALS DEPOSITED AND RUBBED BEFORE MAKING MICROSTRUCTURES 审中-公开
    在制造微结构之前，液晶的沉积和沉积层的对准层

    公开(公告)号：US20100014036A1

    公开(公告)日：2010-01-21

    申请号：US12502061

    申请日：2009-07-13

    申请人： Stephane CAPLET

    发明人： Stephane CAPLET

    IPC分类号： G02F1/1337 ,  H01L21/64

    CPC分类号： G02F1/133377 ,  G02C7/083 ,  G02C2202/18 ,  G02F1/133784

    摘要： A process for formation of cavities of a micro-optic device, comprising: a) formation, on the surface plane of a support, of an alignment layer of liquid crystals; and b) formation of walls of said cavities, the base of said cavities being formed by said alignment layer.

    摘要翻译： 一种用于形成微光学器件的空腔的方法，包括：a）在支撑体的表面上形成液晶取向层; 以及b）形成所述空腔的壁，所述空腔的底部由所述对准层形成。

    SUSPENDED GETTER MATERIAL-BASED STRUCTURE
    9.
    发明申请
    SUSPENDED GETTER MATERIAL-BASED STRUCTURE 有权
    暂停的基于材料的结构

    公开(公告)号：US20100001361A1

    公开(公告)日：2010-01-07

    申请号：US12494147

    申请日：2009-06-29

    申请人： Stephane CAPLET ,  Xavier BAILLIN

    发明人： Stephane CAPLET ,  Xavier BAILLIN

    IPC分类号： H01L23/00 ,  B32B3/26 ,  B32B3/24 ,  H01L21/465

    CPC分类号： B81B7/0038 ,  H01L23/26 ,  H01L2924/0002 ,  Y10T428/24331 ,  Y10T428/24612 ,  H01L2924/00

    摘要： Getter structure comprising a substrate and at least one getter material-based layer mechanically connected to the substrate by means of at least one support, in which the surface of the support in contact with the substrate is smaller than the surface of a first face of the getter material layer, in which said first face is in contact with the support, and a second face of the getter material layer, opposite said first face is at least partially exposed.

    摘要翻译： 吸气体结构包括基底和至少一个通过至少一个支撑件机械地连接到基底的吸气剂材料层，其中与衬底接触的支撑体的表面小于第一面的表面 吸气剂材料层，其中所述第一面与支撑体接触，吸气剂材料层的与所述第一面相对的第二面至少部分地露出。

    Method and zone for sealing between two microstructure substrates
    10.
    发明申请
    Method and zone for sealing between two microstructure substrates 有权
    两个微结构基片之间密封的方法和区域

    公开(公告)号：US20070122929A1

    公开(公告)日：2007-05-31

    申请号：US10500196

    申请日：2002-12-17

    申请人： Bernard Diem ,  Stephane Caplet ,  Marie-Therese Delaye

    发明人： Bernard Diem ,  Stephane Caplet ,  Marie-Therese Delaye

    IPC分类号： H01L21/00

    CPC分类号： B81B7/0077

    摘要： The invention concerns a sealing zone between two microstructure substrates. Said sealing zone comprises at least the following parts: on a first wafer level (20), a lower edging (22A) made of an adhesive material capable of causing the first substrate (20) to adhere to a sealing material, said sealing material being adapted to spontaneously diffuse jointly with the material of the second wafer level (30); on said lower edging (22A), a layer of said sealing material; and on said layer of sealing material, a protuberance (36) formed on said second wafer level (30) containing a certain amount of sealing material. The invention is applicable to microstructures comprising vacuum-operated components.

    摘要翻译： 本发明涉及两个微结构基片之间的密封区。 所述密封区至少包括以下部分：在第一晶片级（20）上，由能够使第一基板（20）粘附到密封材料上的粘合材料制成的下边缘（22A），所述密封材料 适于与第二晶片级（30）的材料共同扩散; 在所述下边缘（22A）上形成一层所述密封材料; 并且在所述密封材料层上形成有包含一定量的密封材料的所述第二晶片级（30）上的突起（36）。 本发明适用于包括真空操作部件的微结构。