Preparation method of superabsorbent polymer
    3.
    发明授权
    Preparation method of superabsorbent polymer 有权
    超吸收聚合物的制备方法

    公开(公告)号:US09029480B2

    公开(公告)日:2015-05-12

    申请号:US13824970

    申请日:2011-11-28

    IPC分类号: C08J7/12 B01J20/26 C08J3/24

    摘要: The present invention relates to a preparation method of a superabsorbent polymer, and specifically to a method of preparing a superabsorbent polymer including the steps of: preparing a hydrous gel phase polymer by thermal polymerizing or photo-polymerizing a monomer composition including a water-soluble ethylene-based unsaturated monomer and a polymerization initiator; drying the hydrous gel phase polymer; milling the dried polymer; classifying the milled hydrous gel phase polymer into two or more grades by particle size; adding a surface cross-linking agent to each hydrous gel phase polymer classified into two or more grades; and carrying out a surface cross-linking reaction of the hydrous gel phase polymer to which the surface cross-linking agent is added.

    摘要翻译: 本发明涉及超吸收性聚合物的制备方法,具体涉及一种制备超吸收性聚合物的方法,包括以下步骤:通过热聚合或光聚合包含水溶性乙烯的单体组合物制备含水凝胶相聚合物 的不饱和单体和聚合引发剂; 干燥含水凝胶相聚合物; 研磨干燥聚合物; 将研磨的含水凝胶相聚合物通过粒度分级成两个或更多个等级; 向分级为两个或更多个等级的每个含水凝胶相聚合物加入表面交联剂; 并进行加入表面交联剂的含水凝胶相聚合物的表面交联反应。

    Semiconductor device, method of manufacturing the same, and electronic device including the semiconductor device
    6.
    发明授权
    Semiconductor device, method of manufacturing the same, and electronic device including the semiconductor device 有权
    半导体装置及其制造方法以及包括半导体装置的电子装置

    公开(公告)号:US08466472B2

    公开(公告)日:2013-06-18

    申请号:US13098165

    申请日:2011-04-29

    IPC分类号: H01L33/02

    摘要: A semiconductor device, a method of manufacturing the semiconductor device, and an electronic device including the semiconductor device are provided. The semiconductor device includes a silicon substrate; a plurality of nanorods formed on the silicon substrate; and a nitride semiconductor layer formed on the silicon substrate and the plurality of nanorods, wherein a plurality of voids are formed between the silicon substrate and the nitride semiconductor in regions between the plurality of nanorods.

    摘要翻译: 提供半导体器件,半导体器件的制造方法和包括半导体器件的电子器件。 半导体器件包括硅衬底; 形成在硅衬底上的多个纳米棒; 以及形成在所述硅基板和所述多个纳米棒上的氮化物半导体层,其中在所述多个纳米棒之间的区域中在所述硅基板和所述氮化物半导体之间形成多个空隙。

    TOUCH SCREEN PANEL APPARATUS WITH IMPROVED ELECTRODE STRUCTURE
    9.
    发明申请
    TOUCH SCREEN PANEL APPARATUS WITH IMPROVED ELECTRODE STRUCTURE 审中-公开
    具有改进的电极结构的触摸屏面板设备

    公开(公告)号:US20120235931A1

    公开(公告)日:2012-09-20

    申请号:US13368909

    申请日:2012-02-08

    IPC分类号: G06F3/041

    CPC分类号: G06F3/044

    摘要: A touch screen panel apparatus is provided. The touch screen panel apparatus includes a first electrode layer including a plurality of first electrode lines arranged in a first direction to be spaced apart from each other by a predetermined distance; a plurality of first odd-numbered electrode plates coupled to odd-numbered lines of the first electrode lines; and a plurality of first even-numbered electrode plates coupled to even-numbered lines of the first electrode lines. The plurality of first odd-numbered electrode plates and the plurality of first even-numbered electrode plates are alternately arranged in a second direction different from the first direction.

    摘要翻译: 提供了触摸屏面板装置。 触摸屏面板装置包括:第一电极层,包括沿第一方向布置的彼此间隔预定距离的多个第一电极线; 耦合到第一电极线的奇数行的多个第一奇数电极板; 以及耦合到第一电极线的偶数行的多个第一偶数电极板。 多个第一奇数电极板和多个第一偶数电极板沿与第一方向不同的第二方向交替布置。