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1.发明授权公开(公告)号：US08399353B2
公开(公告)日：2013-03-19
申请号：US13081172
申请日：2011-04-06
申请人： Tadahiro Ishizaka , Atsushi Gomi , Takara Kato , Osamu Yokoyama , Takashi Sakuma , Chiaki Yasumuro , Hiroyuki Toshima , Tatsuo Hatano , Yasushi Mizusawa , Masamichi Hara
发明人： Tadahiro Ishizaka , Atsushi Gomi , Takara Kato , Osamu Yokoyama , Takashi Sakuma , Chiaki Yasumuro , Hiroyuki Toshima , Tatsuo Hatano , Yasushi Mizusawa , Masamichi Hara
IPC分类号： H01L21/768
CPC分类号： C23C16/16 , C23C14/024 , C23C14/025 , C23C14/046 , C23C14/165 , C23C14/345 , C23C14/568 , C23C14/5873 , C23C16/0272 , C23C16/045 , C23C16/54 , C23C16/56 , C23C28/023 , H01L21/2855 , H01L21/28556 , H01L21/76846 , H01L21/76882 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding copper in the trench or hole by forming a Cu film on the Ru film using PVD while heating the substrate such that migration of copper into the trench or hole occurs.
摘要翻译： 提供了一种在衬底中形成的沟槽或孔中形成Cu布线的方法。 该方法包括在沟槽或孔的表面上形成阻挡膜，在阻挡膜上形成Ru膜，并通过在加热衬底的同时在PVD膜上形成Cu膜，将铜包埋在沟槽或孔中，使得 发生铜进入沟槽或孔的迁移。
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公开(公告)号：US20120222782A1
公开(公告)日：2012-09-06
申请号：US13496714
申请日：2010-08-27
申请人： Atsushi Gomi , Yasushi Mizusawa , Tatsuo Hatano , Osamu Yokoyama , Tadahiro Ishizaka , Chiaki Yasumuro , Takara Kato
发明人： Atsushi Gomi , Yasushi Mizusawa , Tatsuo Hatano , Osamu Yokoyama , Tadahiro Ishizaka , Chiaki Yasumuro , Takara Kato
CPC分类号： H01L23/53238 , H01L21/76829 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76877 , H01L21/76883 , H01L2924/0002 , H01L2924/00
摘要： In a Cu wiring forming method which is followed by a post-process including a treatment of a temperature of 500° C. or higher, an adhesion film made of a metal having a lattice spacing that differs from the lattice spacing of Cu by 10% or less is formed on a substrate having a trench and/or a hole in the surface such that the adhesion film is deposited on at least the bottom and side surfaces of the trench and/or hole. A Cu film is formed on the adhesion film to fill the trench and/or hole. An annealing process is performed on the substrate on which the Cu film has been formed at 350° C. or higher. The CU film is polished to leave only the part of the Cu film which corresponds to the trench and/or hole. A cap is formed on the polished Cu film to form a Cu wiring.
摘要翻译： 在Cu布线形成方法中，其后是包括处理500℃或更高温度的后续处理，由具有不同于Cu的晶格间距的晶格间距的金属制成的粘合膜为10％ 或更少的表面形成在具有沟槽和/或孔的衬底上，使得粘附膜沉积在沟槽和/或孔的至少底部和侧表面上。 在粘合膜上形成Cu膜以填充沟槽和/或孔。 在其上形成有Cu膜的基板上进行退火处理为350℃以上。 CU膜被抛光以仅留下对应于沟槽和/或孔的Cu膜的部分。 在抛光的Cu膜上形成盖以形成Cu布线。
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3.发明申请公开(公告)号：US20120196437A1
公开(公告)日：2012-08-02
申请号：US13081172
申请日：2011-04-06
申请人： Tadahiro ISHIZAKA , Atsushi GOMI , Takara KATO , Osamu YOKOYAMA , Takashi SAKUMA , Chiaki YASUMURO , Hiroyuki TOSHIMA , Tatsuo HATANO , Yasushi MIZUSAWA , Masamichi HARA
发明人： Tadahiro ISHIZAKA , Atsushi GOMI , Takara KATO , Osamu YOKOYAMA , Takashi SAKUMA , Chiaki YASUMURO , Hiroyuki TOSHIMA , Tatsuo HATANO , Yasushi MIZUSAWA , Masamichi HARA
IPC分类号： H01L21/768 , C23C16/52 , C23C16/50 , C23C16/46
CPC分类号： C23C16/16 , C23C14/024 , C23C14/025 , C23C14/046 , C23C14/165 , C23C14/345 , C23C14/568 , C23C14/5873 , C23C16/0272 , C23C16/045 , C23C16/54 , C23C16/56 , C23C28/023 , H01L21/2855 , H01L21/28556 , H01L21/76846 , H01L21/76882 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding copper in the trench or hole by forming a Cu film on the Ru film using PVD while heating the substrate such that migration of copper into the trench or hole occurs.
摘要翻译： 提供了一种在衬底中形成的沟槽或孔中形成Cu布线的方法。 该方法包括在沟槽或孔的表面上形成阻挡膜，在阻挡膜上形成Ru膜，并通过在加热衬底的同时在PVD膜上形成Cu膜，将铜包埋在沟槽或孔中，使得 发生铜进入沟槽或孔的迁移。
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公开(公告)号：US20130252417A1
公开(公告)日：2013-09-26
申请号：US13619083
申请日：2012-09-14
申请人： Tadahiro ISHIZAKA , Jonathan Rullan , Osamu Yokoyama , Atsushi Gomi , Chiaki Yasumuro , Takara Kato , Tatsuo Hatano , Hiroaki Kawasaki
发明人： Tadahiro ISHIZAKA , Jonathan Rullan , Osamu Yokoyama , Atsushi Gomi , Chiaki Yasumuro , Takara Kato , Tatsuo Hatano , Hiroaki Kawasaki
IPC分类号： H01L21/768
CPC分类号： H01L21/76829 , C23C14/025 , C23C14/18 , C23C14/5806 , C23C14/5873 , C23C16/0272 , C23C16/08 , C23C16/56 , C23C28/322 , C23C28/34 , C23C28/345 , C23C28/42 , H01L21/76846 , H01L21/76877 , H01L21/76883 , H01L23/53238 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： A thin film forming method in which a thin film is formed on a surface of a target object to be processed to fill a recess formed in the surface of the target object includes the steps of forming a metal layer for filling on the surface of the target object to fill the recess formed in the surface of the target object and forming a metal film for preventing diffusion on an entire surface of the target object to cover the metal layer for filling. The thin film forming method further includes the step of annealing the target object having the metal film for preventing diffusion formed thereon.
摘要翻译： 一种薄膜形成方法，其中在要处理的目标物体的表面上形成薄膜以填充形成在目标物体的表面上的凹部的薄膜形成方法包括以下步骤：形成用于填充在靶材表面上的金属层 目的是填充形成在目标物体的表面上的凹部，并形成用于防止在目标物体的整个表面上扩散的金属膜，以覆盖用于填充的金属层。 薄膜形成方法还包括退火具有用于防止扩散形成的金属膜的目标物体的步骤。
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公开(公告)号：US20130237053A1
公开(公告)日：2013-09-12
申请号：US13876682
申请日：2011-09-26
申请人： Tadahiro Ishizaka , Takashi Sakuma , Tatsuo Hatano , Osamu Yokoyama , Atsushi Gomi , Chiaki Yasumuro , Toshihiko Fukushima , Hiroyuki Toshima , Masaya Kawamata , Yasushi Mizusawa , Takara Kato
发明人： Tadahiro Ishizaka , Takashi Sakuma , Tatsuo Hatano , Osamu Yokoyama , Atsushi Gomi , Chiaki Yasumuro , Toshihiko Fukushima , Hiroyuki Toshima , Masaya Kawamata , Yasushi Mizusawa , Takara Kato
IPC分类号： H01L21/768 , H01J37/34
CPC分类号： H01L21/768 , C23C14/021 , C23C14/024 , C23C14/14 , C23C14/345 , C23C14/3492 , C23C14/541 , C23C14/542 , H01J37/34 , H01L21/2855 , H01L21/76865 , H01L21/76873 , H01L21/76877 , H01L21/76882
摘要： A film forming method which generates metal ions from a metal target with a plasma in a processing chamber and attracts the metal ions with a bias to deposit a metal thin film on a target object wherein trenches are formed. The method includes: generating metal ions from a target and attracting the metal ions into a target object with a bias to form a base film in a trench; ionizing a rare gas with the bias in a state where no metal ion is generated and attracting the generated ions into the target object to etch the base film; and plasma sputtering the target to generate metal ions and attracting the metal ions into the object with a high frequency power for bias to deposit a main film as a metal film, while reflowing the main film by heating.
摘要翻译： 一种在处理室中从具有等离子体的金属靶产生金属离子的薄膜形成方法，并且在偏压下吸引金属离子以在形成有沟槽的目标物体上沉积金属薄膜。 该方法包括：从靶产生金属离子并以偏压将金属离子吸引到目标物体中，以在沟槽中形成基膜; 在不产生金属离子的状态下以偏压电离稀有气体，并将产生的离子吸引到目标物体中以蚀刻基膜; 并且等离子体溅射靶以产生金属离子并以高频功率将金属离子吸引到物体中以偏压沉积作为金属膜的主膜，同时通过加热回流主膜。
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6.发明授权公开(公告)号：US08859422B2
公开(公告)日：2014-10-14
申请号：US13359138
申请日：2012-01-26
申请人： Tadahiro Ishizaka , Atsushi Gomi , Takara Kato , Osamu Yokoyama , Takashi Sakuma , Chiaki Yasumuro , Hiroyuki Toshima , Tatsuo Hatano , Yasushi Mizusawa , Masamichi Hara , Kenzi Suzuki
发明人： Tadahiro Ishizaka , Atsushi Gomi , Takara Kato , Osamu Yokoyama , Takashi Sakuma , Chiaki Yasumuro , Hiroyuki Toshima , Tatsuo Hatano , Yasushi Mizusawa , Masamichi Hara , Kenzi Suzuki
IPC分类号： H01L21/44
CPC分类号： H01L21/02104 , C23C14/025 , C23C14/046 , C23C14/345 , C23C14/541 , C23C14/5806 , C23C16/16 , H01J37/32899 , H01J37/34
摘要： A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding Cu in the trench or hole by forming a Cu film on the Ru film using PVD while annealing the substrate such that migration of copper into the trench or hole occurs.
摘要翻译： 提供了一种在衬底中形成的沟槽或孔中形成Cu布线的方法。 该方法包括在沟槽或孔的表面上形成阻挡膜，在阻挡膜上形成Ru膜，并且通过在使衬底退火的同时在PVD膜上形成Cu膜而将Cu嵌入沟槽或孔中，使得 发生铜进入沟槽或孔的迁移。
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7.发明申请公开(公告)号：US20120196052A1
公开(公告)日：2012-08-02
申请号：US13359138
申请日：2012-01-26
申请人： Tadahiro ISHIZAKA , Atsushi GOMI , Takara KATO , Osamu YOKOYAMA , Takashi SAKUMA , Chiaki YASUMURO , Hiroyuki TOSHIMA , Tatsuo HATANO , Yasushi MIZUSAWA , Masamichi HARA , Kenzi SUZUKI
发明人： Tadahiro ISHIZAKA , Atsushi GOMI , Takara KATO , Osamu YOKOYAMA , Takashi SAKUMA , Chiaki YASUMURO , Hiroyuki TOSHIMA , Tatsuo HATANO , Yasushi MIZUSAWA , Masamichi HARA , Kenzi SUZUKI
CPC分类号： H01L21/02104 , C23C14/025 , C23C14/046 , C23C14/345 , C23C14/541 , C23C14/5806 , C23C16/16 , H01J37/32899 , H01J37/34
摘要： A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding Cu in the trench or hole by forming a Cu film on the Ru film using PVD while annealing the substrate such that migration of copper into the trench or hole occurs.
摘要翻译： 提供了一种在衬底中形成的沟槽或孔中形成Cu布线的方法。 该方法包括在沟槽或孔的表面上形成阻挡膜，在阻挡膜上形成Ru膜，并且通过在使衬底退火的同时在PVD膜上形成Cu膜而将Cu嵌入沟槽或孔中，使得 发生铜进入沟槽或孔的迁移。
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8.发明申请METHOD FOR FORMING CVD-RU FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES 审中-公开形成CVD-RU膜的方法和制造半导体器件的方法公开(公告)号：US20120064717A1
公开(公告)日：2012-03-15
申请号：US13230351
申请日：2011-09-12
申请人： Takara KATO , Yasushi Mizusawa , Tatsuo Hatano , Atsushi Gomi , Chiaki Yasumuro , Osamu Yokoyama
发明人： Takara KATO , Yasushi Mizusawa , Tatsuo Hatano , Atsushi Gomi , Chiaki Yasumuro , Osamu Yokoyama
IPC分类号： H01L21/768 , C23C16/16 , C23C16/56 , G06F19/00
CPC分类号： H01L23/53238 , C23C16/16 , C23C16/56 , H01L21/28556 , H01L21/76846 , H01L21/76864 , H01L21/76873 , H01L2924/0002 , H01L2924/00
摘要： In a CVD-Ru film forming method, an Ru-film is formed on a substrate by means of CVD using a ruthenium carbonyl as a film-forming material before forming a Cu film. Then the substrate on which the aforementioned Ru film is formed is annealed in a hydrogen containing atmosphere.
摘要翻译： 在CVD-Ru膜形成方法中，在形成Cu膜之前，通过使用羰基钌作为成膜材料的CVD在基板上形成Ru膜。 然后将其上形成上述Ru膜的基板在含氢气氛中退火。
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