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    POLISHING APPARATUS AND POLISHING METHOD
    1.
    发明申请
    POLISHING APPARATUS AND POLISHING METHOD 有权
    抛光装置和抛光方法

    公开(公告)号：US20110217906A1

    公开(公告)日：2011-09-08

    申请号：US13036114

    申请日：2011-02-28

    申请人： Masayuki NAKANISHI ,  Tetsuji Togawa ,  Kenya Ito ,  Masaya Seki ,  Kenji Iwade ,  Takeo Kubota ,  Takeshi Nishioka

    发明人： Masayuki NAKANISHI ,  Tetsuji Togawa ,  Kenya Ito ,  Masaya Seki ,  Kenji Iwade ,  Takeo Kubota ,  Takeshi Nishioka

    IPC分类号： B24B1/00 ,  B24B55/00

    CPC分类号： B24B1/00 ,  B24B55/00

    摘要： A polishing apparatus can effectively prevent abrasive particles from falling off a polishing tape during polishing. The polishing apparatus includes: a polishing head for polishing a peripheral portion of a substrate by pressing a surface of a polishing tape, having abrasive particles fixed on the surface, against the peripheral portion of the substrate while allowing the polishing tape to travel in one direction; and a conditioning apparatus, disposed upstream of the polishing head in the traveling direction of the polishing tape, for conditioning the surface of the polishing tape in advance in order to prevent the abrasive particles from falling off the surface of the polishing tape during polishing.

    摘要翻译： 抛光装置可以有效地防止研磨颗粒在抛光过程中从抛光带上脱落。 抛光装置包括：抛光头，用于通过将具有固定在表面上的研磨颗粒的研磨带的表面按压在基板的周边部分上，同时允许研磨带沿单向移动来抛光基板的周边部分 ; 以及调整装置，其设置在研磨带的行进方向上的抛光头的上游，用于预先调整研磨带的表面，以防止研磨颗粒在抛光期间从研磨带的表面脱落。

    Semiconductor device
    3.
    发明申请
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US20050167842A1

    公开(公告)日：2005-08-04

    申请号：US10974922

    申请日：2004-10-28

    申请人： Naofumi Nakamura ,  Noriaki Matsunaga ,  Sachiyo Ito ,  Masahiko Hasunuma ,  Takeshi Nishioka

    发明人： Naofumi Nakamura ,  Noriaki Matsunaga ,  Sachiyo Ito ,  Masahiko Hasunuma ,  Takeshi Nishioka

    IPC分类号： H01L23/52 ,  H01L21/00 ,  H01L21/3205 ,  H01L21/822 ,  H01L23/00 ,  H01L23/522 ,  H01L23/58 ,  H01L27/04 ,  H01L27/10 ,  H01L29/40

    CPC分类号： H01L23/564 ,  H01L23/522 ,  H01L23/585 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device includes a first insulating layer provided above a semiconductor substrate. The first insulating layer includes a layer consisting essentially of a material having a relative dielectric constant smaller than 3. The first insulating layer includes a first integral structure consisting of a plug and wiring. The upper surface of the wiring is flush with the upper surface of the first insulating layer, and the lower surface of the plug is flush with the lower surface of the first insulating layer. A region protective member is formed of a second integral structure consisting of a plug and wiring. The second integral structure extends from the upper surface of the first insulating layer to the lower surface of the first insulating layer. The region protective member surrounds one of first to n-th regions (n being a natural 2 or more) partitioned by a boundary region on a horizontal plane.

    摘要翻译： 半导体器件包括设置在半导体衬底之上的第一绝缘层。 第一绝缘层包括基本上由相对介电常数小于3的材料组成的层。第一绝缘层包括由插头和布线组成的第一整体结构。 布线的上表面与第一绝缘层的上表面齐平，插头的下表面与第一绝缘层的下表面齐平。 区域保护构件由由插头和布线组成的第二整体结构形成。 第二整体结构从第一绝缘层的上表面延伸到第一绝缘层的下表面。 区域保护构件围绕由水平面上的边界区划分的第一至第n区域（n为自然2以上）中的一个。

    Polishing apparatus and polishing method
    4.
    发明授权
    Polishing apparatus and polishing method 有权
    抛光设备和抛光方法

    公开(公告)号：US08641480B2

    公开(公告)日：2014-02-04

    申请号：US13036114

    申请日：2011-02-28

    申请人： Masayuki Nakanishi ,  Tetsuji Togawa ,  Kenya Ito ,  Masaya Seki ,  Kenji Iwade ,  Takeo Kubota ,  Takeshi Nishioka

    发明人： Masayuki Nakanishi ,  Tetsuji Togawa ,  Kenya Ito ,  Masaya Seki ,  Kenji Iwade ,  Takeo Kubota ,  Takeshi Nishioka

    IPC分类号： B24B1/00

    CPC分类号： B24B1/00 ,  B24B55/00

    摘要： A polishing apparatus can effectively prevent abrasive particles from falling off a polishing tape during polishing. The polishing apparatus includes: a polishing head for polishing a peripheral portion of a substrate by pressing a surface of a polishing tape, having abrasive particles fixed on the surface, against the peripheral portion of the substrate while allowing the polishing tape to travel in one direction; and a conditioning apparatus, disposed upstream of the polishing head in the traveling direction of the polishing tape, for conditioning the surface of the polishing tape in advance in order to prevent the abrasive particles from falling off the surface of the polishing tape during polishing.

    摘要翻译： 抛光装置可以有效地防止研磨颗粒在抛光过程中从抛光带上脱落。 抛光装置包括：抛光头，用于通过将具有固定在表面上的研磨颗粒的研磨带的表面按压在基板的周边部分上，同时允许研磨带沿单向移动来抛光基板的周边部分 ; 以及调整装置，其设置在研磨带的行进方向上的抛光头的上游，用于预先调整研磨带的表面，以防止研磨颗粒在抛光期间从研磨带的表面脱落。

    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    8.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
    制造半导体器件的方法

    公开(公告)号：US20090156000A1

    公开(公告)日：2009-06-18

    申请号：US12332802

    申请日：2008-12-11

    申请人： Yukiteru MATSUI ,  Atsushi Shigeta ,  Yoshikuni Tateyama ,  Takeshi Nishioka ,  Hiroyuki Yano

    发明人： Yukiteru MATSUI ,  Atsushi Shigeta ,  Yoshikuni Tateyama ,  Takeshi Nishioka ,  Hiroyuki Yano

    IPC分类号： H01L21/283

    CPC分类号： H01L21/02118 ,  C09G1/02 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76835

    摘要： A method for manufacturing a semiconductor device is provided, which includes forming a coated film by coating a solution containing a solvent and an organic component above an insulating film located above a semiconductor substrate and having a recess, baking the coated film at a first temperature which does not accomplish cross-linking of the organic component to obtain an organic film precursor, polishing the organic film precursor using a first slurry containing first resin particles and a water-soluble polymer to planarize a surface of the organic film precursor, and polishing the organic film precursor where the surface is planarized using a second slurry containing second resin particles and a water-soluble polymer to leave the organic film precursor in the recess, thereby exposing the insulating film, an average particle diameter of the second resin particles being smaller than that of the first resin particles.

    摘要翻译： 提供了一种制造半导体器件的方法，其包括通过将含有溶剂和有机组分的溶液涂覆在位于半导体衬底上方并具有凹槽的绝缘膜上的溶液形成涂膜，在第一温度下烘烤该涂膜 不能实现有机成分的交联以获得有机膜前体，使用含有第一树脂粒子和水溶性聚合物的第一浆料对有机膜前体进行研磨，使有机膜前体的表面平坦化， 膜前体，其中使用含有第二树脂颗粒和水溶性聚合物的第二浆料将表面平坦化，以使凹陷中的有机膜前体离开，从而暴露绝缘膜，第二树脂颗粒的平均粒径小于 的第一树脂颗粒。

    Semiconductor device and manufacturing method thereof
    10.
    发明申请
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US20070099394A1

    公开(公告)日：2007-05-03

    申请号：US11583698

    申请日：2006-10-20

    申请人： Toshiyuki Morita ,  Takeshi Nishioka

    发明人： Toshiyuki Morita ,  Takeshi Nishioka

    IPC分类号： H01L21/76 ,  H01L21/461 ,  H01L21/302

    CPC分类号： H01L21/2885 ,  H01L21/76838 ,  H01L21/76877 ,  H01L23/522 ,  H01L2924/0002 ,  Y10S438/926 ,  H01L2924/00

    摘要： A semiconductor device, has a semiconductor substrate; a first insulating film which is disposed above the semiconductor substrate; a second insulating film which is disposed above the first insulating film; a wiring which is disposed in the first insulating film and has a plug connecting part; a plug which is disposed in the second insulating film and connected to the plug connecting part; a plurality of first dummy wirings which are disposed in a first area near the plug connecting part in the first insulating film; and a plurality of second dummy wirings which are disposed in a second area near the wiring excepting the plug connecting part in the first insulating film, and have at least either a width smaller than that of the first dummy wirings or a pattern coverage ratio larger than that of the first dummy wirings.

    摘要翻译： 半导体器件具有半导体衬底; 设置在所述半导体基板上方的第一绝缘膜; 第二绝缘膜，设置在第一绝缘膜的上方; 布置在所述第一绝缘膜中并具有插头连接部的布线; 插塞，其设置在所述第二绝缘膜中并连接到所述插头连接部; 多个第一虚拟布线，其布置在所述第一绝缘膜中的所述插头连接部附近的第一区域中; 以及多个第二虚拟布线，其布置在除了所述第一绝缘膜中的所述插头连接部以外的所述布线附近的第二区域中，并且具有比所述第一虚拟布线的宽度小的至少一个或者大于 第一个虚拟布线。