公开(公告)号：US09177839B2

公开(公告)日：2015-11-03

申请号：US12399396

申请日：2009-03-06

申请人： Toshifumi Ishida

发明人： Toshifumi Ishida

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/67 ,  H01J37/32 ,  C23C16/455

CPC分类号： H01L21/67069 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32449

摘要： A processing gas diffusing and supplying unit includes a supporting portion having an opening, a plate including gas supply holes, an internal space, between the supporting portion and the plate, communicating with the opening, and a cover part installed within the internal space and connected to the opening. The cover part includes a shielding portion which is disposed within the internal space and has a surface facing the opening, a side wall which holds the shielding portion, and a through hole formed at the side wall and communicating with the opening and the internal space. At least a portion of the gas supply holes is located right below the cover part and a height of the internal space is equal to or greater than 8 mm.

摘要翻译： 处理气体扩散供给单元包括具有开口的支撑部，包括气体供给孔的板，支撑部与板之间的内部空间，与开口连通，以及安装在内部空间内的盖部， 到开幕 盖部包括屏蔽部，其设置在内部空间内并且具有面向开口的表面，保持屏蔽部的侧壁和形成在侧壁上并与开口和内部空间连通的通孔。 气体供给孔的至少一部分位于盖部的正下方，内部空间的高度为8mm以上。

公开(公告)号：US20100240154A1

公开(公告)日：2010-09-23

申请号：US12726602

申请日：2010-03-18

申请人： Toshifumi Ishida

发明人： Toshifumi Ishida

IPC分类号： H01L21/465

CPC分类号： H01L21/67109 ,  H01L21/67103 ,  H01L21/67248

摘要： Provided is a temperature control device for controlling a temperature of a member to be exposed to plasma in a substrate processing apparatus. The substrate processing apparatus includes a mounting electrode for mounting a target substrate and a facing electrode positioned to face the mounting electrode, excites a processing gas supplied between the mounting electrode and the facing electrode into plasma, and performs a plasma process on the target substrate with the plasma. The temperature control device includes a heating layer configured to heat a heating target member, a heat insulating layer positioned in contact with an opposite surface to a heating layer's surface facing the heating target member, and a cooling layer positioned in contact with an opposite surface to a heat insulating layer's surface facing the heating layer.

摘要翻译： 提供了一种用于控制在基板处理装置中暴露于等离子体的部件的温度的温度控制装置。 基板处理装置包括安装目标基板的安装电极和面对安装电极的面对电极，将在安装电极和对置电极之间供给的处理气体激发成等离子体，并对目标基板进行等离子体处理， 等离子体。 温度控制装置包括：加热层，被配置为加热加热目标构件;隔热层，其与与加热目标构件相对的加热层的表面的相对表面接触;以及冷却层，其与相对的表面 面向加热层的绝热层的表面。

公开(公告)号：US20110000894A1

公开(公告)日：2011-01-06

申请号：US12876597

申请日：2010-09-07

申请人： Toshifumi ISHIDA ,  Daisuke Hayashi

发明人： Toshifumi ISHIDA ,  Daisuke Hayashi

IPC分类号： B23K9/00 ,  B23K20/00 ,  B23K31/02

CPC分类号： H05H1/46 ,  H01J37/32009 ,  H01J37/32724

摘要： The present invention is a cooling block that forms an electrode for generating a plasma for use in a plasma process, and includes a channel for a cooling liquid, the cooling block comprising: a first base material and a second base material respectively made of aluminum, at least one of the first and second base materials having a recess for forming a channel for a cooling liquid; and a diffusion bonding layer, in which zinc is diffused in aluminum, and an anti-corrosion layer of a zinc oxide film, the layers being formed by interposing zinc between the first and second base materials, and by bonding the first and second base materials with zinc interposed therebetween in a heating atmosphere containing oxygen.

摘要翻译： 本发明是一种冷却块，其形成用于产生用于等离子体处理的等离子体的电极，并且包括用于冷却液体的通道，所述冷却块包括：分别由铝制成的第一基材和第二基材， 所述第一和第二基底材料中的至少一个具有用于形成用于冷却液体的通道的凹部; 以及锌在铝中扩散的扩散接合层和氧化锌膜的防腐蚀层，所述层通过在第一和第二基底材料之间插入锌而形成，并且通过将第一和第二基底材料 在含有氧的加热气氛中夹有锌。

公开(公告)号：US20090223449A1

公开(公告)日：2009-09-10

申请号：US12399396

申请日：2009-03-06

申请人： Toshifumi ISHIDA

发明人： Toshifumi ISHIDA

IPC分类号： C23C16/455

CPC分类号： H01L21/67069 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32449

摘要： A cover part is provided in a substrate processing apparatus including a processing chamber for accommodating a substrate, a processing gas diffusing and supplying unit, and a processing gas introducing pipe for introducing the processing gas into the processing gas diffusing and supplying unit. The processing gas diffusing and supplying unit includes an internal space formed therein and widening in parallel to a surface of the substrate accommodated in the processing chamber and gas holes allowing the internal space to communicate with the processing chamber. The processing gas introducing pipe is connected to the internal space via an opening, the opening facing a portion of the gas holes. The cover part covering the opening includes a shielding portion which is disposed within the internal space and has a surface facing the opening and a holding portion which holds the shielding portion at a predetermined position.

摘要翻译： 在包括用于容纳衬底的处理室，处理气体扩散供给单元和用于将处理气体引入处理气体扩散供给单元的处理气体导入管的基板处理装置中设置有盖部。 处理气体扩散供给单元包括形成在其中的内部空间，并且平行于容纳在处理室中的基板的表面变宽，允许内部空间与处理室连通的气体孔。 处理气体导入管经由开口连接到内部空间，该开口面对气体孔的一部分。 覆盖开口的盖部包括：屏蔽部，其设置在内部空间内并且具有面向开口的表面以及将屏蔽部保持在预定位置的保持部。

公开(公告)号：US20070210037A1

公开(公告)日：2007-09-13

申请号：US11708677

申请日：2007-02-21

申请人： Toshifumi Ishida ,  Daisuke Hayashi

发明人： Toshifumi Ishida ,  Daisuke Hayashi

IPC分类号： B23K9/00

CPC分类号： H05H1/46 ,  H01J37/32009 ,  H01J37/32724

摘要： The present invention is a cooling block that forms an electrode for generating a plasma for use in a plasma process, and includes a channel for a cooling liquid, the cooling block comprising: a first base material and a second base material respectively made of aluminum, at least one of the first and second base materials having a recess for forming a channel for a cooling liquid; and a diffusion bonding layer, in which zinc is diffused in aluminum, and an anti-corrosion layer of a zinc oxide film, the layers being formed by interposing zinc between the first and second base materials, and by bonding the first and second base materials with zinc interposed therebetween in a heating atmosphere containing oxygen.

摘要翻译： 本发明是一种冷却块，其形成用于产生用于等离子体处理的等离子体的电极，并且包括用于冷却液体的通道，所述冷却块包括：分别由铝制成的第一基材和第二基材， 所述第一和第二基底材料中的至少一个具有用于形成用于冷却液体的通道的凹部; 以及锌在铝中扩散的扩散接合层和氧化锌膜的防腐蚀层，所述层通过在第一和第二基底材料之间插入锌而形成，并且通过将第一和第二基底材料 在含有氧的加热气氛中夹有锌。

公开(公告)号：US20120247673A1

公开(公告)日：2012-10-04

申请号：US13435689

申请日：2012-03-30

申请人： Daisuke HAYASHI ,  Toshifumi ISHIDA ,  Norihiko AMIKURA

发明人： Daisuke HAYASHI ,  Toshifumi ISHIDA ,  Norihiko AMIKURA

IPC分类号： H01J1/02 ,  H05H1/24 ,  B44C1/22 ,  C23C16/50 ,  C23C16/455

CPC分类号： H01J37/32449 ,  C23C16/455 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/45576 ,  C23C16/50 ,  C23C16/503 ,  C23C16/505 ,  C23C16/509 ,  C23F1/12 ,  H01J1/00 ,  H01J1/02 ,  H01J37/32532

摘要： An electrode having a gas discharge function, where the degree of freedom related to a maximum gas flow rate is abundant, an electrode cover member may be thinned, and a change of a gas behavior according to time is difficult to be generated in a processing chamber during gas introduction. The electrode includes: a base material having a plurality of gas holes; and an electrode cover member having a plurality of gas holes respectively corresponding to the plurality of gas holes of the base material in a one-to-one manner, fixed to the base material, and disposed facing a processing space in which the object is plasma-processed, wherein a gas hole diameter of the electrode cover member is larger than a gas hole diameter of the base material.

摘要翻译： 具有气体放电功能的电极，其中与最大气体流量相关的自由度丰富，电极盖构件可能变薄，并且在处理室中难以产生根据时间的气体性能的变化 在气体引入期间。 电极包括：具有多个气孔的基材; 以及电极盖构件，其具有分别对应于所述基材的所述多个气孔的多个气孔，所述多个气孔以一对一的方式固定到所述基材上，并且面对所述物体为等离子体的处理空间 其特征在于，所述电极盖部件的气孔直径大于所述基材的气孔直径。

公开(公告)号：US09082593B2

公开(公告)日：2015-07-14

申请号：US13435689

申请日：2012-03-30

申请人： Daisuke Hayashi ,  Toshifumi Ishida ,  Norihiko Amikura

发明人： Daisuke Hayashi ,  Toshifumi Ishida ,  Norihiko Amikura

IPC分类号： C23C16/455 ,  C23C16/50 ,  C23C16/503 ,  C23C16/505 ,  C23C16/509 ,  C23F1/00 ,  H01J37/32 ,  H01J1/02 ,  C23F1/12 ,  H01J1/00

CPC分类号： H01J37/32449 ,  C23C16/455 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/45576 ,  C23C16/50 ,  C23C16/503 ,  C23C16/505 ,  C23C16/509 ,  C23F1/12 ,  H01J1/00 ,  H01J1/02 ,  H01J37/32532

摘要： An electrode having a gas discharge function, where the degree of freedom related to a maximum gas flow rate is abundant, an electrode cover member may be thinned, and a change of a gas behavior according to time is difficult to be generated in a processing chamber during gas introduction. The electrode includes: a base material having a plurality of gas holes; and an electrode cover member having a plurality of gas holes respectively corresponding to the plurality of gas holes of the base material in a one-to-one manner, fixed to the base material, and disposed facing a processing space in which the object is plasma-processed, wherein a gas hole diameter of the electrode cover member is larger than a gas hole diameter of the base material.

摘要翻译： 具有气体放电功能的电极，其中与最大气体流量相关的自由度丰富，电极盖构件可能变薄，并且在处理室中难以产生根据时间的气体性能的变化 在气体引入期间。 电极包括：具有多个气孔的基材; 以及电极盖构件，其具有分别对应于所述基材的所述多个气孔的多个气孔，所述多个气孔以一对一的方式固定到所述基材上，并且面对所述物体为等离子体的处理空间 其特征在于，所述电极盖部件的气孔直径大于所述基材的气孔直径。

公开(公告)号：US08319141B2

公开(公告)日：2012-11-27

申请号：US12876597

申请日：2010-09-07

申请人： Toshifumi Ishida ,  Daisuke Hayashi

发明人： Toshifumi Ishida ,  Daisuke Hayashi

IPC分类号： B23K9/00 ,  F02M3/10 ,  F28F7/00

CPC分类号： H05H1/46 ,  H01J37/32009 ,  H01J37/32724

摘要： The present invention is a cooling block that forms an electrode for generating a plasma for use in a plasma process, and includes a channel for a cooling liquid, the cooling block comprising: a first base material and a second base material respectively made of aluminum, at least one of the first and second base materials having a recess for forming a channel for a cooling liquid; and a diffusion bonding layer, in which zinc is diffused in aluminum, and an anti-corrosion layer of a zinc oxide film, the layers being formed by interposing zinc between the first and second base materials, and by bonding the first and second base materials with zinc interposed therebetween in a heating atmosphere containing oxygen.

摘要翻译： 本发明是一种冷却块，其形成用于产生用于等离子体处理的等离子体的电极，并且包括用于冷却液体的通道，所述冷却块包括：分别由铝制成的第一基材和第二基材， 所述第一和第二基底材料中的至少一个具有用于形成用于冷却液体的通道的凹部; 以及锌在铝中扩散的扩散接合层和氧化锌膜的防腐蚀层，所述层通过在第一和第二基底材料之间插入锌而形成，并且通过将第一和第二基底材料 在含有氧的加热气氛中夹有锌。

公开(公告)号：US20050000442A1

公开(公告)日：2005-01-06

申请号：US10844436

申请日：2004-05-13

申请人： Daisuke Hayashi ,  Toshifumi Ishida ,  Shigetoshi Kimura

发明人： Daisuke Hayashi ,  Toshifumi Ishida ,  Shigetoshi Kimura

IPC分类号： H05H1/46 ,  B01J3/00 ,  B01J19/08 ,  C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  C23F4/00 ,  H01J37/32 ,  H01L21/02 ,  H01L21/3065 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/5096 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32724

摘要： An upper electrode for use in generating a plasma of a processing gas includes a cooling block having a coolant path for circulating a coolant therethrough and one or more through holes for passing the processing gas therethrough, an electrode plate having one or more injection openings for injecting the processing gas toward the substrate to be processed mounted on the mounting table, and an electrode frame installed at an upper portion of the cooling block and providing a processing gas diffusion gap for diffusing the processing gas between the cooling block and the electrode frame. The electrode plate is detachably fixed to a bottom surface of the cooling block via a thermally conductive member having flexibility.

摘要翻译： 用于产生处理气体的等离子体的上电极包括具有用于使冷却剂循环的冷却剂通道的冷却块和用于使处理气体通过的一个或多个通孔，具有一个或多个注射开口的电极板 处理气体朝着安装在安装台上的被处理基板，以及安装在冷却块的上部的电极框架，并且提供用于在冷却块和电极框架之间扩散处理气体的处理气体扩散间隙。 电极板通过具有柔性的导热构件可拆卸地固定在冷却块的底面上。