Magnetic recording media having chemically modified patterned substrate to assemble self organized magnetic arrays
    2.
    发明授权
    Magnetic recording media having chemically modified patterned substrate to assemble self organized magnetic arrays 失效
    具有经化学改性的图案化基底以组装自组织磁阵列的磁记录介质

    公开(公告)号:US07153597B2

    公开(公告)日:2006-12-26

    申请号:US10682690

    申请日:2003-10-09

    IPC分类号: G11B5/64

    摘要: A data storage medium is provided according to the present invention for magnetic recording. The data storage medium includes a substrate having a locking pattern etched therein defining patterned regions. The patterned regions are chemically modified by depositing a self-assembled monolayer therein. A first layer of nanoparticles is provided in the patterned regions on top of the self-assembled monolayer and is chemically bonded to the substrate via the self-assembled monolayer. The first layer of nanoparticles is chemically modified using functional surfactant molecules applied thereto, such that a second layer of nanoparticles may be formed on top of the first layer and chemically bonded thereto via the functional surfactant molecules. Additional layers of nanoparticles may be applied by chemically modifying the top layer of nanoparticles utilizing the functional surfactant molecules and applying a further layer of nanoparticles thereto.

    摘要翻译: 根据本发明提供了用于磁记录的数据存储介质。 数据存储介质包括其中蚀刻有锁定图案的基板,其中限定图案化区域。 通过在其中沉积自组装单层来对图案化区进行化学修饰。 在自组装单层顶部的图案化区域中提供第一层纳米颗粒,并通过自组装单层化学键合到基底上。 使用施加到其上的功能性表面活性剂分子对第一层纳米颗粒进行化学修饰,使得可以在第一层的顶部上形成第二层纳米颗粒,并通过功能性表面活性剂分子与其化学键合。 可以通过使用功能性表面活性剂分子对纳米颗粒的顶层进行化学修饰来施加另外的纳米颗粒层来施加另外的纳米颗粒层。

    Electron beam lithography method for plating sub-100 nm trenches
    3.
    发明授权
    Electron beam lithography method for plating sub-100 nm trenches 失效
    电子束光刻法用于电镀100nm以下的沟槽

    公开(公告)号:US06815358B2

    公开(公告)日:2004-11-09

    申请号:US10108309

    申请日:2002-03-28

    IPC分类号: H01L21311

    摘要: A lithography method for plating sub-100 nm narrow trenches, including providing a thin undercoat dissolution layer intermediate a seed layer and a resist layer, wherein the undercoat dissolution layer is relatively completely cleared off the seed layer by the developer solution such that the sides of the narrow trench will be generally vertical, particularly at the base of the narrow trench, thus facilitating plating the narrow trench with a high magnetic moment material.

    摘要翻译: 用于电镀次100nm窄沟槽的光刻方法,包括提供种子层和抗蚀剂层之间的薄底涂层溶解层,其中底涂层溶解层通过显影剂溶液相对完全从种子层清除,使得 窄沟槽通常是垂直的,特别是在窄沟槽的底部,因此有助于用高磁矩材料镀覆窄沟槽。

    Pole for magnetic recording
    5.
    发明授权
    Pole for magnetic recording 有权
    极磁记录

    公开(公告)号:US08848315B2

    公开(公告)日:2014-09-30

    申请号:US13602915

    申请日:2012-09-04

    摘要: A method for forming a magnetic write pole with a trapezoidal cross-section is described. The method consists of first forming a magnetic seedlayer on a base followed by depositing a removable material layer on the seedlayer, and then a resist layer on the removable material layer. A trench is then formed in the resist, and the resist is heated to cause the cross -sectional profile of the trench to assume a trapezoidal shape. The resist is then capped with another resist layer and further heated to cause the width of the trapezoidal trench to become narrower. The cap layer and removable material layer at the bottom of the trench are then removed and the trench filled with magnetic material by electroplating. The resist and seedlayer external to the trench are finally removed to form a write pole with a trapezoidal cross-section.

    摘要翻译: 描述了形成具有梯形截面的磁性写入极的方法。 该方法包括首先在基底上形成磁性种子层,然后在种子层上沉积可去除的材料层,然后在可移除材料层上形成抗蚀剂层。 然后在抗蚀剂中形成沟槽,并且加热抗蚀剂以使沟槽的横截面呈现呈梯形。 然后将抗蚀剂用另一抗蚀剂层封盖,并进一步加热,使梯形沟槽的宽度变窄。 然后去除沟槽底部的覆盖层和可移除材料层,并通过电镀填充磁性材料的沟槽。 最后去除沟槽外部的抗蚀剂和籽晶层以形成具有梯形横截面的写入极。

    Formation of a device using block copolymer lithography
    7.
    发明授权
    Formation of a device using block copolymer lithography 有权
    使用嵌段共聚物光刻形成器件

    公开(公告)号:US08268545B2

    公开(公告)日:2012-09-18

    申请号:US12135387

    申请日:2008-06-09

    IPC分类号: G03F7/26

    摘要: The formation of a device using block copolymer lithography is provided. The formation of the device includes forming a block copolymer structure. The block copolymer structure includes a first polymer and a second polymer. The block copolymer structure also includes a first component deposited between adjacent blocks of the first polymer and a second component deposited between adjacent blocks of the second polymer. A template is developed by removing either the first and second polymers or the first and second components from the block copolymer structure. The formation of the device also includes lithographically patterning the device utilizing the block copolymer structure template. The device may be a data storage medium.

    摘要翻译: 提供了使用嵌段共聚物光刻法形成装置。 该装置的形成包括形成嵌段共聚物结构。 嵌段共聚物结构包括第一聚合物和第二聚合物。 嵌段共聚物结构还包括沉积在第一聚合物的相邻嵌段之间的第一组分和沉积在第二聚合物的相邻嵌段之间的第二组分。 通过从嵌段共聚物结构中除去第一和第二聚合物或第一和第二组分来开发模板。 该器件的形成还包括利用嵌段共聚物结构模板对该器件进行光刻图案化。 该设备可以是数据存储介质。