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    GaN semiconductor device
    1.
    发明授权
    GaN semiconductor device 有权

    公开(公告)号：US08487317B2

    公开(公告)日：2013-07-16

    申请号：US12382955

    申请日：2009-03-27

    申请人： Yi-Chieh Lin ,  Cheng-Ta Kuo ,  Yu-Pin Hsu ,  Chi-Ming Tsai

    发明人： Yi-Chieh Lin ,  Cheng-Ta Kuo ,  Yu-Pin Hsu ,  Chi-Ming Tsai

    IPC分类号： H01L33/00 ,  H01L29/20

    CPC分类号： H01L33/12 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/007

    摘要： This invention discloses a GaN semiconductor device comprising a substrate; a metal-rich nitride compound thin film on the substrate; a buffer layer formed on the metal-rich nitride compound thin film, and a semiconductor stack layer on the buffer layer wherein the metal-dominated nitride compound thin film covers a partial upper surface of the substrate. Because metal-rich nitride compound is amorphous, the epitaxial growth direction of the buffer layer grows upwards in the beginning and then turns laterally, and the epitaxy defects of the buffer layer also bend with the epitaxial growth direction of the buffer layer. Therefore, the probability of the epitaxial defects extending to the semiconductor stack layer is reduced and the reliability of the GaN semiconductor device is improved.

    GaN semiconductor device
    2.
    发明申请
    GaN semiconductor device 有权
    GaN半导体器件

    公开(公告)号：US20090256159A1

    公开(公告)日：2009-10-15

    申请号：US12382955

    申请日：2009-03-27

    申请人： Yi-Chieh Lin ,  Cheng-Ta Kuo ,  Yu-Pin Hsu ,  Chi-Ming Tsai

    发明人： Yi-Chieh Lin ,  Cheng-Ta Kuo ,  Yu-Pin Hsu ,  Chi-Ming Tsai

    IPC分类号： H01L33/00 ,  H01L29/20

    CPC分类号： H01L33/12 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/007

    摘要： This invention discloses a GaN semiconductor device comprising a substrate; a metal-rich nitride compound thin film on the substrate; a buffer layer formed on the metal-rich nitride compound thin film, and a semiconductor stack layer on the buffer layer wherein the metal-dominated nitride compound thin film covers a partial upper surface of the substrate. Because metal-rich nitride compound is amorphous, the epitaxial growth direction of the buffer layer grows upwards in the beginning and then turns laterally, and the epitaxy defects of the buffer layer also bend with the epitaxial growth direction of the buffer layer. Therefore, the probability of the epitaxial defects extending to the semiconductor stack layer is reduced and the reliability of the GaN semiconductor device is improved.

    摘要翻译： 本发明公开了一种包括基板的GaN半导体器件; 在基板上形成富金属的氮化物化合物薄膜; 形成在富金属氮化物化合物薄膜上的缓冲层，以及缓冲层上的半导体堆叠层，其中金属主导的氮化物化合物薄膜覆盖基板的部分上表面。 因为富金属的氮化物是非晶体，所以缓冲层的外延生长方向在开始时向上生长然后横向变化，并且缓冲层的外延缺陷也随着缓冲层的外延生长方向而弯曲。 因此，延伸到半导体堆叠层的外延缺陷的概率降低，并且提高了GaN半导体器件的可靠性。

    Opto-electronic device
    3.
    发明授权
    Opto-electronic device 有权
    光电器件

    公开(公告)号：US08729525B2

    公开(公告)日：2014-05-20

    申请号：US12547073

    申请日：2009-08-25

    申请人： Jui-Yi Chu ,  Cheng-Ta Kuo ,  Yu-Pin Hsu ,  Chun-Kai Wang ,  Hsin-Hsien Wu ,  Yi-Chieh Lin

    发明人： Jui-Yi Chu ,  Cheng-Ta Kuo ,  Yu-Pin Hsu ,  Chun-Kai Wang ,  Hsin-Hsien Wu ,  Yi-Chieh Lin

    IPC分类号： H01L29/06 ,  H01L33/06

    CPC分类号： H01L33/06 ,  H01L33/325

    摘要： The present application relates to an opto-electronic device. The opto-electronic device includes an n-cladding layer, a p-cladding layer and a multi-quantum well structure. The multi-quantum well structure is located between the p-cladding layer and the n-cladding layer, and includes a plurality of barrier layers, a plurality of well layers and a barrier tuning layer. The barrier tuning layer is made by doping the barrier layer adjacent to the p-cladding layer with an impurity therein for changing an energy barrier thereof to improve the light extraction efficiency of the opto-electronic device.

    摘要翻译： 本申请涉及一种光电器件。 光电器件包括n包层，p包层和多量子阱结构。 多量子阱结构位于p包覆层和n包层之间，并且包括多个势垒层，多个阱层和势垒调整层。 阻挡层调整层是通过将与p型包层相邻的势垒层与其中的杂质掺杂以改变其能量势垒而制成的，以提高光电器件的光提取效率。

    OPTO-ELECTRONIC DEVICE
    4.
    发明申请
    OPTO-ELECTRONIC DEVICE 有权
    光电设备

    公开(公告)号：US20100046205A1

    公开(公告)日：2010-02-25

    申请号：US12547073

    申请日：2009-08-25

    申请人： Jui-Yi CHU ,  Cheng-Ta Kuo ,  Yu-Pin Hsu ,  Chun-Kai Wang ,  Hsin-Hsien Wu ,  Yi-Chieh Lin

    发明人： Jui-Yi CHU ,  Cheng-Ta Kuo ,  Yu-Pin Hsu ,  Chun-Kai Wang ,  Hsin-Hsien Wu ,  Yi-Chieh Lin

    IPC分类号： G02F1/13357 ,  H01L29/15

    CPC分类号： H01L33/06 ,  H01L33/325

    摘要： The present application relates to an opto-electronic device. The opto-electronic device includes an n-cladding layer, a p-cladding layer and a multi-quantum well structure. The multi-quantum well structure is located between the p-cladding layer and the n-cladding layer, and includes a plurality of barrier layers, a plurality of well layers and a barrier tuning layer. The barrier tuning layer is made by doping the barrier layer adjacent to the p-cladding layer with an impurity therein for changing an energy barrier thereof to improve the light extraction efficiency of the opto-electronic device.

    摘要翻译： 本申请涉及一种光电器件。 光电器件包括n包层，p包层和多量子阱结构。 多量子阱结构位于p包覆层和n包层之间，并且包括多个势垒层，多个阱层和势垒调整层。 阻挡层调整层是通过将与p型包层相邻的势垒层与其中的杂质掺杂以改变其能量势垒而制成的，以提高光电器件的光提取效率。

    Light emitting diode device and manufacturing method therof
    5.
    发明申请
    Light emitting diode device and manufacturing method therof 有权
    发光二极管器件及其制造方法

    公开(公告)号：US20090057696A1

    公开(公告)日：2009-03-05

    申请号：US12222814

    申请日：2008-08-18

    申请人： Cheng-Ta Kuo ,  Yu-Pin Hsu ,  Chun-Kai Wang ,  Jui-Yi Chu ,  Tsung-Kuang Chen

    发明人： Cheng-Ta Kuo ,  Yu-Pin Hsu ,  Chun-Kai Wang ,  Jui-Yi Chu ,  Tsung-Kuang Chen

    IPC分类号： H01L33/00

    CPC分类号： H01L33/14

    摘要： A light-emitting diode device (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first n-type semiconductor layer, an n-type three-dimensional electron cloud structure, a second n-type semiconductor layer, an active layer and a p-type semiconductor layer. The first n-type semiconductor layer, the n-type three-dimensional electron cloud structure, the second n-type semiconductor layer, the active layer and the p-type semiconductor layer are subsequently grown on the substrate.

    摘要翻译： 提供了一种发光二极管器件（LED）器件及其制造方法，其中LED器件包括衬底，第一n型半导体层，n型三维电子云结构，第二n型半导体 层，有源层和p型半导体层。 随后，在基板上生长第一n型半导体层，n型三维电子云结构，第二n型半导体层，有源层和p型半导体层。

    Light emitting diode device that includes a three dimensional cloud structure and manufacturing method thereof
    6.
    发明授权
    Light emitting diode device that includes a three dimensional cloud structure and manufacturing method thereof 有权
    包括三维云结构的发光二极管装置及其制造方法

    公开(公告)号：US07902562B2

    公开(公告)日：2011-03-08

    申请号：US12222814

    申请日：2008-08-18

    申请人： Cheng-Ta Kuo ,  Yu-Pin Hsu ,  Chun-Kai Wang ,  Jui-Yi Chu ,  Tsung-Kuang Chen

    发明人： Cheng-Ta Kuo ,  Yu-Pin Hsu ,  Chun-Kai Wang ,  Jui-Yi Chu ,  Tsung-Kuang Chen

    IPC分类号： H01L33/32

    CPC分类号： H01L33/14

    摘要： A light-emitting diode device (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first n-type semiconductor layer, an n-type three-dimensional electron cloud structure, a second n-type semiconductor layer, an active layer and a p-type semiconductor layer. The first n-type semiconductor layer, the n-type three-dimensional electron cloud structure, the second n-type semiconductor layer, the active layer and the p-type semiconductor layer are subsequently grown on the substrate.

    摘要翻译： 提供了一种发光二极管器件（LED）器件及其制造方法，其中LED器件包括衬底，第一n型半导体层，n型三维电子云结构，第二n型半导体 层，有源层和p型半导体层。 随后，在基板上生长第一n型半导体层，n型三维电子云结构，第二n型半导体层，有源层和p型半导体层。

    Light-emitting device
    7.
    发明授权
    Light-emitting device 有权
    发光装置

    公开(公告)号：US08294174B2

    公开(公告)日：2012-10-23

    申请号：US12870407

    申请日：2010-08-27

    申请人： Chao-Hsing Chen ,  Yu-Pin Hsu

    发明人： Chao-Hsing Chen ,  Yu-Pin Hsu

    IPC分类号： H01L33/00 ,  H01L29/417 ,  H01L29/86 ,  H01L29/861

    CPC分类号： H01L27/156 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/12032 ,  H01L2924/00014 ,  H01L2924/00

    摘要： This disclosure discloses a light-emitting device comprising a substrate; and a plurality of rectifying units, comprising a first rectifying unit and a second rectifying unit, formed on the substrate for receiving and regulating an alternating current signal into a direct current signal. Each of the rectifying units comprises a contact layer and a schottky metal layer. The light-emitting device further comprises a plurality of light-emitting diodes receiving the direct current signal; and a first terminal provided on the substrate and covering the contact layer of the first rectifying unit and the schottky metal layer of the second rectifying unit.

    摘要翻译： 本公开公开了一种包括基板的发光装置; 以及多个整流单元，包括形成在所述基板上的第一整流单元和第二整流单元，用于接收和调节交流信号为直流信号。 每个整流单元包括接触层和肖特基金属层。 发光装置还包括接收直流信号的多个发光二极管; 以及设置在基板上并覆盖第一整流单元的接触层和第二整流单元的肖特基金属层的第一端子。

    SYSTEM FOR SENSING ARTERIAL PULSE WAVEFORM
    8.
    发明申请
    SYSTEM FOR SENSING ARTERIAL PULSE WAVEFORM 有权

    公开(公告)号：US20220257126A1

    公开(公告)日：2022-08-18

    申请号：US17622280

    申请日：2020-06-26

    申请人： Yu-Pin Hsu ,  Zemin Liu ,  Mona Mostafa Hella

    发明人： Yu-Pin Hsu ,  Zemin Liu ,  Mona Mostafa Hella

    IPC分类号： A61B5/021 ,  A61B5/00 ,  H03M1/10 ,  H03M1/46

    摘要： One embodiment provides an offset calibration circuitry configured to compensate an offset voltage of a resistive bridge sensor. The offset calibration circuitry includes a first current digital to analog converter (IDAC) coupled to a first successive approximation register (SAR), a second IDAC coupled to a second SAR and an SAR controller circuitry. The first IDAC is configured to couple to a negative voltage port of a resistive bridge sensor. The first SAR is configured to store a circuitry first digital value. The second IDAC is configured to couple to a positive voltage port of the resistive bridge sensor. The second SAR is configured to store a second digital value. The SAR controller circuitry is configured to adjust each bit of the first SAR and each bit of the second SAR based, at least in part, on an output of a comparator. The comparator is configured to compare a voltage on the negative voltage port or a voltage on the positive voltage port to a common mode voltage.

    LIGHT-EMITTING DEVICE
    10.
    发明申请
    LIGHT-EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20110062891A1

    公开(公告)日：2011-03-17

    申请号：US12870407

    申请日：2010-08-27

    申请人： Chao-Hsing CHEN ,  Yu-Pin Hsu

    发明人： Chao-Hsing CHEN ,  Yu-Pin Hsu

    IPC分类号： H05B41/36

    CPC分类号： H01L27/156 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/12032 ,  H01L2924/00014 ,  H01L2924/00

    摘要： This disclosure discloses a light-emitting device comprising a substrate; and a plurality of rectifying units, comprising a first rectifying unit and a second rectifying unit, formed on the substrate for receiving and regulating an alternating current signal into a direct current signal. Each of the rectifying units comprises a contact layer and a schottky metal layer. The light-emitting device further comprises a plurality of light-emitting diodes receiving the direct current signal; and a first terminal provided on the substrate and covering the contact layer of the first rectifying unit and the schottky metal layer of the second rectifying unit.

    摘要翻译： 本公开公开了一种包括基板的发光装置; 以及多个整流单元，包括形成在所述基板上的第一整流单元和第二整流单元，用于接收和调节交流信号为直流信号。 每个整流单元包括接触层和肖特基金属层。 发光装置还包括接收直流信号的多个发光二极管; 以及设置在基板上并覆盖第一整流单元的接触层和第二整流单元的肖特基金属层的第一端子。