摘要:
Methods for producing a substrate for mounting a device and for producing a semiconductor module are provided. The methods comprise preparing a metal plate on one major surface of which a plurality of projected electrodes are provided. An insulating resin layer is formed on the major surface so as to cover the top surface of the projected electrodes. The top surface of at least one of the plurality of projected electrodes is exposed by removing the insulating resin layer so that a major surface of the insulating resin layer opposite to the metal plate is level. A plurality of counter electrodes is arranged having a counterface to face the top face of the plurality of projected electrodes or a semiconductor device having a plurality of device electrodes is arranged to face the top face of the plurality of projected electrodes. The at least one of the plurality of projected electrodes, the top surface of which is exposed, is electrically connected with at least one of the plurality of counter electrodes facing the projected electrodes, by pressure-bonding the metal plate with the counter electrode. A wiring layer is formed by selectively removing the metal plate.
摘要:
An insulating resin layer (30) is formed on a metal substrate (20), and a wiring is formed on the insulating resin layer (30). A circuit composed of a circuit element (50) and a passive element (60) is formed on the wiring (40), and the metal substrate (20) is covered with an over coat (80) and a sealing resin member (90). The insulating resin layer (30) is provided with an opening (31) so that a part of the metal substrate (20) is exposed therefrom. The exposed part of the metal substrate (20) is connected to one terminal of a capacitor (62) through a conductive wire (42), and the other terminal of the capacitor (62) is connected to the ground potential.
摘要:
A substrate for mounting a device comprises: an insulating resin layer; a plurality of projected electrodes that are connected electrically to a wiring layer provided on one major surface of the insulating resin layer, and that project toward the insulating resin layer from the wiring layer; and a counter electrode provided at a position corresponding to each of the plurality of projected electrodes on the other major surface of the insulating resin layer. Among the projected electrodes, a projected length of part of the projected electrodes is smaller than that of the other projected electrodes; and the projected electrode and the counter electrode corresponding thereto are capacitively-coupled, and the projected electrode and the counter electrode are connected electrically.
摘要:
A memory capable of suppressing disturbance is provided. This memory comprises a bit line, a word line arranged to intersect with the bit line and first storage means connected between the bit line and the word line, and applies prescribed reverse voltages to at least non-selected first storage means connected to a non-selected word line substantially identical times respectively or substantially applies no voltage through a read operation and a rewrite operation.
摘要:
A memory capable of suppressing disturbance is provided. This memory comprises a bit line, a word line arranged to intersect with the bit line and first storage means connected between the bit line and the word line, and applies prescribed reverse voltages to at least non-selected first storage means connected to a non-selected word line substantially identical times respectively or substantially applies no voltage through a read operation and a rewrite operation.
摘要:
A battery cell module includes a plurality of battery cells arranged to each other, bus bars used to connect external terminals of the plurality of battery cells, and separators provided between adjacent battery cells. Each battery cell includes an electrode body, a casing that houses the electrode body, and external terminals, provided external to the casing, which are electrically connected to the electrode body. The separator includes a heat transfer section that performs heat transfer between the heat section and the battery cell and an insulator that electrically insulates between the heat transfer section and the battery cell. The heat transfer section has a thermal conductivity higher than that of the insulator.
摘要:
An insulating resin layer (30) is formed on a metal substrate (20), and a wiring is formed on the insulating resin layer (30). A circuit composed of a circuit element (50) and a passive element (60) is formed on the wiring (40), and the metal substrate (20) is covered with an over coat (80) and a sealing resin member (90). The insulating resin layer (30) is provided with an opening (31) so that a part of the metal substrate (20) is exposed therefrom. The exposed part of the metal substrate (20) is connected to one terminal of a capacitor (62) through a conductive wire (42), and the other terminal of the capacitor (62) is connected to the ground potential.
摘要:
A circuit device includes: a first booster circuit, started by a predetermined input voltage, which converts the input voltage into a first boosted voltage higher than the input voltage; a capacitor, connected to the booster circuit, which charges the first boosted voltage; a second booster circuit, connected to the capacitor via a first switch element and started by a storage voltage in the capacitor, which converts the input voltage into a second boosted voltage higher than the first boosted voltage; and a second switch element which connects an output terminal of the second booster circuit with the capacitor. The first switch element turns on to start the second booster circuit so as to supply the storage voltage in the capacitor to the second booster circuit. After the second booster circuit has been started, the first switch element turns off to stop supplying the storage voltage. After the second booster circuit has been started, the second switch element turns on to supply the second boosted voltage to the capacitor.
摘要:
An electronic tuning system includes an electronic tuner for adjusting the predetermined control voltage of a voltage controlled oscillator (VCO) to tune the local frequency signal to radio waves on an arbitrary channel in accordance with channel selection information. A booster circuit boosts a source voltage to generate a boosted voltage in order to ensure the predetermined control voltage. A non-volatile memory stores the channel selection information in response to a predetermined write voltage. The boosted voltage of the booster circuit is utilized as the predetermined write voltage.
摘要:
A semiconductor memory device having a first memory including a bit line, a word line arranged to intersect with the bit line and a storage unit arranged between the bit line and the word line, and a second memory different in type from the first memory. The first memory and the second memory are formed on a semiconductor substrate in a stacked manner reducing the thickness in the height direction and attaining further miniaturization (thinning). Further, no wire having a large parasitic capacitance or solder is employed for connecting the first memory and the second memory, thereby enabling high-speed data transfer between the first memory and the second memory.