公开(公告)号：US20060252246A1

公开(公告)日：2006-11-09

申请号：US11395157

申请日：2006-04-03

申请人： Kyung-Wook Paik ,  Myung-Jin Yim ,  Ho-Young Son ,  Yong-Min Kwon

发明人： Kyung-Wook Paik ,  Myung-Jin Yim ,  Ho-Young Son ,  Yong-Min Kwon

IPC分类号： H01L21/44

CPC分类号： H01L31/02162 ,  H01L27/14618 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/14632 ,  H01L27/14687 ,  H01L31/0203 ,  H01L31/02325 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

摘要： The present invention relates to an image sensor module and a manufacturing method thereof, especially to a wafer level chip size package (WL-CSP) realized by directly contacting an image sensor chip wafer to a glass wafer on which an IR filter coating layer is deposited, an electrode rearrangement and a dicing process, a miniaturized image sensor module using this wafer level chip size package (WL-CSP) and a method thereof. The CMOS image sensor module using a wafer level chip size package technology according to the present invention comprises: an image sensor chip wafer having a partition with a lattice structure formed at portions except an image sensing area; and a glass wafer with an IR filter coating layer and a metal electrode; and wherein the image sensor chip wafer and the glass wafer form an electric contact and a chip sealing by a flip-chip bonding; and wherein a solder bump and a non solder bump are formed after a metal wiring is rearranged on a lower surface of the glass wafer. According to the present invention, it is possible to realize a cheap wafer level chip size package (WL-CSP) using the existing wafer processing and the metal deposition processing equipments. Further, an image sensor module with smaller thickness and area than the existing CSP package can be realized. Moreover, an image sensor module with a smaller area than the existing COG package can be realized.

摘要翻译： 图像传感器模块及其制造方法技术领域本发明涉及一种图像传感器模块及其制造方法，特别涉及通过将图像传感器芯片晶片直接接触到其上沉积有IR滤光器涂层的玻璃晶片实现的晶片级芯片尺寸封装（WL-CSP） ，电极重排和切割处理，使用该晶片级芯片尺寸封装（WL-CSP）的小型化图像传感器模块及其方法。 使用根据本发明的晶片级芯片尺寸封装技术的CMOS图像传感器模块包括：图像传感器芯片晶片，具有形成在除了图像感测区域之外的部分处的格子结构的分隔; 和具有IR滤光器涂层和金属电极的玻璃晶片; 并且其中所述图像传感器芯片晶片和所述玻璃晶片通过倒装芯片接合形成电接触和芯片密封; 并且其中在金属布线重新布置在玻璃晶片的下表面上之后形成焊料凸块和非焊料凸点。 根据本发明，可以使用现有的晶片处理和金属沉积处理设备来实现廉价的晶片级芯片尺寸封装（WL-CSP）。 此外，可以实现具有比现有CSP封装更小的厚度和面积的图像传感器模块。 此外，可以实现具有比现有COG封装小的面积的图像传感器模块。

公开(公告)号：US20160351767A1

公开(公告)日：2016-12-01

申请号：US15056117

申请日：2016-02-29

申请人： Pun Jae CHOI ,  Geun Woo KO ,  Yong Min KWON ,  Ah Young WOO ,  Jun Ho LEE ,  Jin Wook CHUNG

发明人： Pun Jae CHOI ,  Geun Woo KO ,  Yong Min KWON ,  Ah Young WOO ,  Jun Ho LEE ,  Jin Wook CHUNG

IPC分类号： H01L33/62 ,  H01L33/38 ,  H01L27/15 ,  H01L33/54

CPC分类号： H01L33/62 ,  H01L25/0753 ,  H01L25/167 ,  H01L33/486 ,  H01L33/56 ,  H01L33/60

摘要： A semiconductor light-emitting device package includes: a light-emitting structure having a first surface, a second surface opposite to the first surface and side surfaces disposed between the first and the second surfaces, the light-emitting structure comprising a first light-emitting laminate and a second light-emitting laminate, each of the first and the second light emitting laminates including: a first conductivity-type semiconductor layer; an active layer, and a second conductivity-type semiconductor layer, an interconnector provided on the second surface of the light-emitting structure and configured to electrically connect the first and the second light-emitting laminates; a metal guide surrounding the side surfaces of the light-emitting structure; and an encapsulant surrounding the metal guide and the second and the side surfaces of the light-emitting structure and exposing the first surface of the light-emitting structure.

摘要翻译： 一种半导体发光器件封装，包括：发光结构，具有第一表面，与第一表面相对的第二表面和设置在第一和第二表面之间的侧表面，发光结构包括第一发光 层叠体和第二发光层叠体，第一发光层叠体和第二发光层叠体各自包括：第一导电型半导体层; 有源层和第二导电型半导体层，设置在发光结构的第二表面上并被配置为电连接第一和第二发光层压板的互连器; 围绕发光结构的侧表面的金属引导件; 以及围绕所述金属引导件和所述发光结构的所述第二侧面和所述侧表面的密封剂，并且暴露所述发光结构的所述第一表面。

公开(公告)号：US20160270885A1

公开(公告)日：2016-09-22

申请号：US15069980

申请日：2016-03-15

申请人： Soon Yong KWON ,  Ji Min KWON ,  Yong Min KWON

发明人： Soon Yong KWON ,  Ji Min KWON ,  Yong Min KWON

IPC分类号： A61C7/28

CPC分类号： A61C7/282 ,  A61C7/22

摘要： Disclosed are a dental wire supporter, which supports an orthodontic wire and limits the movement of the orthodontic wire in a predetermined direction, and an orthodontic device (orthodontic system) having the same. The dental wire supporter includes a limiter having a wire hole into which an orthodontic wire is inserted, and a support base provided at the limiter in order to fix the limiter to a tooth. One side of the wire hole is blocked and an opposite side of the wire hole is open so that the limiter supports the end of the orthodontic wire in a longitudinal direction of the orthodontic wire.

摘要翻译： 公开了一种牙线支撑件，其支撑正牙线并限制正畸线在预定方向上的移动，以及具有其的正畸装置（正畸系统）。 牙线支撑件包括限制器，其具有插入正畸线的线孔，以及设置在限制器上的支撑基座，以将限制器固定到牙齿上。 线孔的一侧被阻塞，并且线孔的相对侧打开，使得限制器在正畸线的纵向方向上支撑正牙线的端部。

公开(公告)号：US09901422B2

公开(公告)日：2018-02-27

申请号：US15069980

申请日：2016-03-15

申请人： Soon Yong Kwon ,  Ji Min Kwon ,  Yong Min Kwon

发明人： Soon Yong Kwon ,  Ji Min Kwon ,  Yong Min Kwon

IPC分类号： A61C7/28 ,  A61C7/22

CPC分类号： A61C7/282 ,  A61C7/22

摘要： Disclosed are a dental wire supporter, which supports an orthodontic wire and limits the movement of the orthodontic wire in a predetermined direction, and an orthodontic device (orthodontic system) having the same. The dental wire supporter includes a limiter having a wire hole into which an orthodontic wire is inserted, and a support base provided at the limiter in order to fix the limiter to a tooth. One side of the wire hole is blocked and an opposite side of the wire hole is open so that the limiter supports the end of the orthodontic wire in a longitudinal direction of the orthodontic wire.

公开(公告)号：US07446384B2

公开(公告)日：2008-11-04

申请号：US11395157

申请日：2006-04-03

申请人： Kyung-Wook Paik ,  Myung-Jin Yim ,  Ho-Young Son ,  Yong-Min Kwon

发明人： Kyung-Wook Paik ,  Myung-Jin Yim ,  Ho-Young Son ,  Yong-Min Kwon

IPC分类号： H01L27/14 ,  H01L31/00

CPC分类号： H01L31/02162 ,  H01L27/14618 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/14632 ,  H01L27/14687 ,  H01L31/0203 ,  H01L31/02325 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

摘要： The present invention relates to an image sensor module and a manufacturing method thereof, especially to a wafer level chip size package (WL-CSP) realized by directly contacting an image sensor chip wafer to a glass wafer on which an IR filter coating layer is deposited, an electrode rearrangement and a dicing process, a miniaturized image sensor module using this wafer level chip size package (WL-CSP) and a method thereof. The CMOS image sensor module using a wafer level chip size package technology according to the present invention comprises: an image sensor chip wafer having a partition with a lattice structure formed at portions except an image sensing area; and a glass wafer with an IR filter coating layer and a metal electrode; and wherein the image sensor chip wafer and the glass wafer form an electric contact and a chip sealing by a flip-chip bonding; and wherein a solder bump and a non solder bump are formed after a metal wiring is rearranged on a lower surface of the glass wafer. According to the present invention, it is possible to realize a cheap wafer level chip size package (WL-CSP) using the existing wafer processing and the metal deposition processing equipments. Further, an image sensor module with smaller thickness and area than the existing CSP package can be realized. Moreover, an image sensor module with a smaller area than the existing COG package can be realized.

摘要翻译： 图像传感器模块及其制造方法技术领域本发明涉及一种图像传感器模块及其制造方法，特别涉及通过将图像传感器芯片晶片直接接触到其上沉积有IR滤光器涂层的玻璃晶片实现的晶片级芯片尺寸封装（WL-CSP） ，电极重排和切割处理，使用该晶片级芯片尺寸封装（WL-CSP）的小型化图像传感器模块及其方法。 使用根据本发明的晶片级芯片尺寸封装技术的CMOS图像传感器模块包括：图像传感器芯片晶片，具有形成在除了图像感测区域之外的部分处的格子结构的分隔; 和具有IR滤光器涂层和金属电极的玻璃晶片; 并且其中所述图像传感器芯片晶片和所述玻璃晶片通过倒装芯片接合形成电接触和芯片密封; 并且其中在金属布线重新布置在玻璃晶片的下表面上之后形成焊料凸块和非焊料凸块。 根据本发明，可以使用现有的晶片处理和金属沉积处理设备来实现廉价的晶片级芯片尺寸封装（WL-CSP）。 此外，可以实现具有比现有CSP封装更小的厚度和面积的图像传感器模块。 此外，可以实现具有比现有COG封装小的面积的图像传感器模块。

公开(公告)号：US20150372207A1

公开(公告)日：2015-12-24

申请号：US14644174

申请日：2015-03-10

申请人： Kyoung Jun KIM ,  Yong Min KWON

发明人： Kyoung Jun KIM ,  Yong Min KWON

IPC分类号： H01L33/62 ,  H01L33/56 ,  H01L33/36 ,  H01L33/50

CPC分类号： H01L33/62 ,  H01L33/20 ,  H01L33/385 ,  H01L33/44 ,  H01L33/50

摘要： A semiconductor light emitting device package includes a semiconductor laminate having first and second surfaces and side surfaces, and including first and second conductivity-type semiconductor layers, and an active layer, a support body disposed on the second surface and including first and second package electrodes, a first electrode layer disposed on the first surface and connected to the first conductivity-type semiconductor layer and extended along a side of the semiconductor laminate to be connected to the first package electrode, a side insulating layer disposed on a side of the semiconductor laminate and electrically insulating the first electrode layer from the side of the semiconductor laminate, and a second electrode layer disposed on the second surface and electrically connecting the first conductivity-type semiconductor layer to the second package electrode.

摘要翻译： 半导体发光器件封装包括具有第一表面和第二表面以及侧表面并且包括第一和第二导电类型半导体层的半导体层叠体和有源层，设置在第二表面上的支撑体，并且包括第一和第二封装电极 第一电极层，设置在第一表面上并连接到第一导电类型半导体层并且沿着半导体层叠体的一侧延伸以连接到第一封装电极;侧绝缘层，设置在半导体层叠体的一侧 并且将所述第一电极层与所述半导体层叠体的侧面电绝缘，以及设置在所述第二表面上并将所述第一导电类型半导体层电连接到所述第二封装电极的第二电极层。

公开(公告)号：US20140339581A1

公开(公告)日：2014-11-20

申请号：US14274497

申请日：2014-05-09

申请人： Yong Min KWON ,  Hak Hwan KIM ,  Min Young SON ,  Sung Jun IM

发明人： Yong Min KWON ,  Hak Hwan KIM ,  Min Young SON ,  Sung Jun IM

IPC分类号： H01L33/64 ,  H01L33/50 ,  H01L33/62 ,  H01L33/00

CPC分类号： H01L33/382 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/50

摘要： A semiconductor light emitting device package is provided having a light transmissive substrate, and a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially laminated on the light transmissive substrate. The light emitting structure comprises a first surface and a second opposing surface facing the light transmissive substrate. The semiconductor light emitting device package comprises a via penetrating the second conductivity-type semiconductor layer and the active layer, and exposing the first conductivity-type semiconductor layer. A first electrode has a first portion disposed on the first surface, and a second portion extending into the via and contacting the first conductivity-type semiconductor layer. An insulating layer is disposed between the first electrode, and each of the second conductivity type semiconductor layer, the active layer, and the first surface. A second electrode is disposed on the first surface.

摘要翻译： 提供一种半导体发光器件封装，其具有透光性基板，以及包括依次层叠在透光性基板上的第一导电型半导体层，有源层和第二导电型半导体层的发光结构。 发光结构包括面向透光基板的第一表面和第二相对表面。 半导体发光器件封装包括穿透第二导电型半导体层和有源层的通孔，并露出第一导电型半导体层。 第一电极具有设置在第一表面上的第一部分和延伸到通孔中并与第一导电类型半导体层接触的第二部分。 绝缘层设置在第一电极和第二导电类型半导体层，有源层和第一表面之间。 第二电极设置在第一表面上。