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    Nonvolatile semiconductor memory device and manufacturing method for same
    4.
    发明授权
    Nonvolatile semiconductor memory device and manufacturing method for same 有权
    非易失性半导体存储器件及其制造方法

    公开(公告)号：US08450713B2

    公开(公告)日：2013-05-28

    申请号：US12713223

    申请日：2010-02-26

    申请人： Nobuyoshi Awaya ,  Yoshiji Ohta ,  Yoshiaki Tabuchi

    发明人： Nobuyoshi Awaya ,  Yoshiji Ohta ,  Yoshiaki Tabuchi

    IPC分类号： H01L45/00 ,  H01L21/822

    CPC分类号： H01L27/249 ,  G11C13/0007 ,  G11C2013/0083 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/71 ,  G11C2213/72 ,  G11C2213/77 ,  H01L27/0688 ,  H01L27/101 ,  H01L27/2409 ,  H01L27/2418 ,  H01L27/2436 ,  H01L27/2454 ,  H01L45/08 ,  H01L45/1226 ,  H01L45/146 ,  H01L45/1616

    摘要： A three-dimensional memory cell array of memory cells with two terminals having a variable resistive element is formed such that: one ends of memory cells adjacent in Z direction are connected to one of middle selection lines extending in Z direction aligned in X and Y directions; the other ends of the memory cells located at the same point in Z direction are connected to one of third selection lines aligned in Z direction; a two-dimensional array where selection transistors are aligned in X and Y directions is adjacent to the memory cell array in Z direction; gates of selection transistors adjacent in X direction, drains of selection transistors adjacent in Y direction and sources of selection transistors are connected to same first selection line, second selection line, and different middle selection lines, respectively; and first, second and third selection lines are connected to X, Y and Z decoders, respectively.

    摘要翻译： 具有两个具有可变电阻元件的端子的存储单元的三维存储单元阵列被形成为：在Z方向上相邻的存储单元的一端连接到沿Z方向延伸的中间选择线之一，在X和Y方向上对齐 ; 位于Z方向相同点的存储单元的另一端连接到在Z方向上排列的第三选择线之一; 选择晶体管在X和Y方向上排列的二维阵列与Z方向上的存储单元阵列相邻; 在X方向上相邻的选择晶体管的栅极，在Y方向相邻的选择晶体管的漏极和选择晶体管的源极分别连接到相同的第一选择线，第二选择线和不同的中间选择线; 并且第一，第二和第三选择线分别连接到X，Y和Z解码器。

    Nonvolatile semiconductor memory device
    5.
    发明授权
    Nonvolatile semiconductor memory device 有权
    非易失性半导体存储器件

    公开(公告)号：US08422270B2

    公开(公告)日：2013-04-16

    申请号：US13044892

    申请日：2011-03-10

    申请人： Suguru Kawabata ,  Shinobu Yamazaki ,  Yoshiji Ohta ,  Kazuya Ishihara ,  Nobuyoshi Awaya ,  Akio Kitagawa ,  Kazuya Nakayama

    发明人： Suguru Kawabata ,  Shinobu Yamazaki ,  Yoshiji Ohta ,  Kazuya Ishihara ,  Nobuyoshi Awaya ,  Akio Kitagawa ,  Kazuya Nakayama

    IPC分类号： G11C11/34

    CPC分类号： G11C13/004 ,  G11C2013/0045 ,  G11C2213/71 ,  G11C2213/72 ,  G11C2213/77

    摘要： A nonvolatile semiconductor memory device includes a bit voltage adjusting circuit which, for each bit line, fixes potentials of a selected bit line and a non-selected bit line to a predetermined potential to perform a memory operation and a data voltage adjusting circuit which, for each data line, fixes potentials of a selected data line and a non-selected data line to a predetermined potential to perform a memory operation. Each of the voltage adjusting circuits includes an operational amplifier and a transistor, a voltage required for a memory operation is input to the non-inverted input terminal of the operational amplifier, and the inverted input terminal of the operational amplifier is connected to the bit line or the data line, so that the potential of the bit line or the data line is fixed to a potential of the non-inverted input terminal of the operational amplifier.

    摘要翻译： 非易失性半导体存储器件包括：位电压调整电路，对于每个位线，将选定位线和非选定位线的电位固定到预定电位以执行存储器操作，以及数据电压调整电路， 每个数据线将所选数据线和未选择的数据线的电位固定到预定电位以执行存储器操作。 每个电压调节电路包括运算放大器和晶体管，将存储器操作所需的电压输入到运算放大器的非反相输入端，运算放大器的反相输入端连接到位线 或数据线，使得位线或数据线的电位固定为运算放大器的非反相输入端的电位。

    Moving apparatus
    7.
    发明授权
    Moving apparatus 有权
    移动装置

    公开(公告)号：US08210470B2

    公开(公告)日：2012-07-03

    申请号：US11166743

    申请日：2005-06-23

    申请人： Yoshiji Ohta ,  Keita Hara ,  Masaki Hamamoto

    发明人： Yoshiji Ohta ,  Keita Hara ,  Masaki Hamamoto

    IPC分类号： B64C33/02

    CPC分类号： B64C33/00

    摘要： In a moving apparatus, flapping angle of a front wing shaft is γ+Δγ/2, and the flapping angle of rear wing shaft is γ−Δγ/2. Specifically, amplitude difference between front wing shaft and rear wing shaft is Δγ. Further, the flapping motion of front wing shaft is represented by sin (τ+φ/2), and the flapping motion of rear wing shaft is represented by sin (τ−φ/2). In other words, phase difference between the front and rear wing shafts is φ. Further, amplitude difference Δγ and phase difference φ are each represented by a function using a common parameter. Therefore, a control portion can independently change the amplitude difference Δγ and phase difference φ, so as to variously change a torsion angle formed by a tip end portion of the wing and a prescribed phantom plane. Thus, a moving apparatus that can make an efficient transition from hovering to forward or backward flight can be provided.

    摘要翻译： 在移动装置中，前翼轴的拍击角为γ+＆Dgr;γ/ 2，后翼轴的拍打角为γ＆Dgr;γ/ 2。 具体来说，前翼轴和后翼轴之间的振幅差为＆Dgr;γ。 此外，前翼轴的拍击运动由sin（τ+＆phgr; / 2）表示，后翼轴的扑动运动由sin（τ-＆phgr; / 2）表示。 换句话说，前翼和后翼轴之间的相位差是＆phgr。 此外，振幅差Dgr;γ和相位差 各自由使用公共参数的函数表示。 因此，控制部分可以独立地改变振幅差Dgrγ和相位差phgr，以便不同地改变由翼的末端部分形成的扭转角和规定的幻影平面。 因此，可以提供可以从盘旋到向前或向后飞行的有效过渡的移动装置。

    Semiconductor storage device and electronic equipment therefor
    8.
    发明授权
    Semiconductor storage device and electronic equipment therefor 有权
    半导体存储装置及其电子设备

    公开(公告)号：US07978515B2

    公开(公告)日：2011-07-12

    申请号：US12052335

    申请日：2008-03-20

    申请人： Hiroshi Iwata ,  Yoshiji Ohta

    发明人： Hiroshi Iwata ,  Yoshiji Ohta

    IPC分类号： G11C11/34

    CPC分类号： G11C16/26

    摘要： A semiconductor storage device includes a first memory cell for storing two kinds of states, a second memory cell for storing two kinds of states, and a sense amplifier for detecting a potential difference between voltages equivalent to readout currents of the first and second memory cells, respectively. Either one of information data “0” or data “1”, which is stored in combination of the first and second memory cells, is read out by detecting the potential difference equivalent to the readout current difference between the first and second memory cells.

    摘要翻译： 半导体存储装置包括用于存储两种状态的第一存储单元，用于存储两种状态的第二存储单元和用于检测与第一和第二存储单元的读出电流相当的电压之间的电位差的读出放大器， 分别。 通过检测与第一和第二存储单元之间的读出电流差相当的电位差来读出存储在第一和第二存储单元组合中的信息数据“0”或数据“1”中的任何一个。

    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF CONTROLLING THE SAME
    9.
    发明申请
    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF CONTROLLING THE SAME 有权
    非易失性半导体存储器件及其控制方法

    公开(公告)号：US20100118592A1

    公开(公告)日：2010-05-13

    申请号：US12611279

    申请日：2009-11-03

    申请人： Kazuya Ishihara ,  Yutaka Ishikawa ,  Yoshiji Ohta

    发明人： Kazuya Ishihara ,  Yutaka Ishikawa ,  Yoshiji Ohta

    IPC分类号： G11C11/00 ,  G11C8/00 ,  G11C7/00

    CPC分类号： G11C8/12 ,  G11C8/18 ,  G11C13/0007 ,  G11C13/0023 ,  G11C13/0026 ,  G11C13/0028 ,  G11C13/0064 ,  G11C13/0069 ,  G11C2213/32 ,  G11C2216/22

    摘要： Provided is a nonvolatile semiconductor memory device capable of performing a writing action for a memory cell at high speed. The device comprises: a memory cell array having a first sub-bank and a second sub-bank each having a plurality of nonvolatile memory cells arranged in a form of a matrix; a row decoder shared by the first sub-bank and the second sub-bank; a first column decoder and a second column decoder provided in the first sub-bank and the second sub-bank, respectively; and a control circuit arranged to execute alternately a first action cycle to perform a programming action in the first sub-bank and a reading action for a programming verifying action in the second sub-bank and a second action cycle to perform the reading action for the programming verifying action in the first sub-bank and the programming action in the second sub-bank.

    摘要翻译： 提供了一种能够高速地对存储单元执行写入动作的非易失性半导体存储器件。 该装置包括：具有第一子库和第二子库的存储单元阵列，每个具有以矩阵形式布置的多个非易失性存储单元; 由第一子银行和第二子银行共享的行解码器; 分别设置在第一子行和第二子行中的第一列解码器和第二列解码器; 以及控制电路，被配置为交替地执行第一动作循环以在第一子存储体中执行编程动作，以及执行用于第二子存储体中的编程验证动作的读取动作和第二动作循环，以执行对于第二子存储体的读取动作 在第一子行中编程验证动作和第二子行中的编程动作。

    Method of manufacturing fluttering robot using a fluid-structure interactive numerical model for developing controls for wing driving apparatus
    10.
    发明授权
    Method of manufacturing fluttering robot using a fluid-structure interactive numerical model for developing controls for wing driving apparatus 有权
    使用流体结构交互数字模型制造飞行机器人的方法，用于开发翼驱动装置的控制

    公开(公告)号：US07584084B2

    公开(公告)日：2009-09-01

    申请号：US10299947

    申请日：2002-11-19

    申请人： Masaki Hamamoto ,  Yoshiji Ohta ,  Keita Hara ,  Toshiaki Hisada

    发明人： Masaki Hamamoto ,  Yoshiji Ohta ,  Keita Hara ,  Toshiaki Hisada

    IPC分类号： G06G7/60 ,  G06G7/72 ,  G05B13/04 ,  G05B19/18 ,  G09B9/05 ,  G09B9/10

    CPC分类号： G06F17/5018 ,  G06F2217/12 ,  G06F2217/16

    摘要： A numerical model related to fluttering of an insect, when an equivalent model of actual structure of a wing of the insect is moved in the air in accordance with a model of fluttering motion of the wing of the insect is calculated by fluid-structure interactive analysis, in which behavior of the wing and behavior of the air are given as numerical values, including interaction therebetween. Thereafter, a method of controlling a fluttering robot, wing shape and the like are determined by modifying numerical models of fluttering of an insect prepared by fluid-structure interactive analysis, in accordance with sensitivity analysis. Accordingly, a method of preparing numerical models of wing and air considering the behavior of the wing of the insect in the air is provided and, in addition, a method of manufacturing a fluttering robot utilizing the numerical model prepared by this method of preparing numerical model can be provided.

    摘要翻译： 与昆虫飘动相关的数值模型，当昆虫翼翼的实际结构的等效模型根据昆虫翼的飘动运动的模式在空中移动时，通过流体结构相互作用分析计算 ，其中机翼的行为和空气的行为被给予为数值，包括它们之间的相互作用。 此后，根据灵敏度分析，通过修改通过流体 - 结构相互作用分析制备的昆虫振动的数值模型来确定控制飘动机器人，翼形等的方法。 因此，提出了考虑到昆虫在空气中的机翼的行为的机翼和空气的数值模型的制备方法，此外，还提供了一种使用通过这种制备数值模型的方法制备的数值模型来制造振动机器人的方法 可以提供。