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公开(公告)号：US07180390B2
公开(公告)日：2007-02-20
申请号：US10913311
申请日：2004-08-09
Applicant: Keiichi Umeda , Hajime Yamada , Yoshimitsu Ushimi , Daisuke Nakamura
Inventor： Keiichi Umeda , Hajime Yamada , Yoshimitsu Ushimi , Daisuke Nakamura
CPC classification number: H03H9/02094 , H03H3/02 , H03H9/173 , H03H9/174 , H03H2003/023
Abstract: An insulating film including an aluminum nitride film is provided on a support substrate to be supported thereby. Then, a lower electrode, a piezoelectric thin film, and an upper electrode are provided in that order on the aluminum nitride film. The piezoelectric film is disposed between the lower electrode and the upper electrode which oppose each other. Furthermore, the aluminum nitride film is subjected to a plasma treatment in an oxygen-containing atmosphere to form an oxide layer on the aluminum nitride film, the oxide layer being made smoother than the aluminum nitride film.
Abstract translation: 在支撑基板上设置包括氮化铝膜的绝缘膜，由此支撑。 然后，在氮化铝膜上依次设置下电极，压电薄膜和上电极。 压电膜设置在彼此相对的下电极和上电极之间。 此外，在含氧气氛中对氮化铝膜进行等离子体处理，以在氮化铝膜上形成氧化物层，使氧化物层比氮化铝膜更光滑。
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2.发明授权Piezoelectric resonator, piezoelectric filter, duplexer, communication apparatus, and method for manufacturing piezoelectric resonator 有权压电谐振器，压电滤波器，双工器，通信装置和制造压电谐振器的方法公开(公告)号：US06906451B2
公开(公告)日：2005-06-14
申请号：US10329602
申请日：2002-12-27
Applicant: Hajime Yamada , Masaki Takeuchi , Hideki Kawamura , Hiroyuki Fujino , Yukio Yoshino , Ken-ichi Uesaka , Tadashi Nomura , Daisuke Nakamura , Yoshimitsu Ushimi , Takashi Hayashi
Inventor： Hajime Yamada , Masaki Takeuchi , Hideki Kawamura , Hiroyuki Fujino , Yukio Yoshino , Ken-ichi Uesaka , Tadashi Nomura , Daisuke Nakamura , Yoshimitsu Ushimi , Takashi Hayashi
CPC classification number: H03H9/174 , C23C14/10 , C23C14/35 , H03H3/02 , H03H3/04 , H03H9/02133 , H03H9/02149 , H03H9/173 , H03H9/564 , H03H9/568 , H04R17/00 , Y10T29/42 , Y10T29/49005 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49155 , Y10T29/49156
Abstract: A piezoelectric thin film resonator having a stabilized temperature characteristic of resonant frequency, a method for manufacturing the same, and a communication apparatus using the piezoelectric thin film resonator are provided. The piezoelectric thin film resonator is provided with a substrate having an opening, first and second insulation films which are provided on one surface of the substrate while covering the opening and which primarily include SiO2 and Al2O3, respectively, Al2O3 having oxygen defect and being in an amorphous state, and a piezoelectric thin film which is provided on the second insulation film and is sandwiched between electrodes and which primarily includes ZnO.
Abstract translation: 提供具有稳定的谐振频率的温度特性的压电薄膜谐振器，其制造方法和使用该压电薄膜谐振器的通信装置。 压电薄膜谐振器设置有具有开口的第一绝缘膜和第二绝缘膜的基板，所述第一和第二绝缘膜设置在基板的一个表面上，同时覆盖开口并且主要包括SiO 2和Al 2 O 3分别具有氧缺陷并处于非晶状态的Al 2 O 3 N 3，以及压电薄膜 其设置在第二绝缘膜上并夹在电极之间并且主要包括ZnO。
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公开(公告)号：US20090050808A1
公开(公告)日：2009-02-26
申请号：US12264961
申请日：2008-11-05
Applicant: Yoshimitsu USHIMI , Naoko AIZAWA , Hiroyuki FUJINO , Hajime YAMADA
Inventor： Yoshimitsu USHIMI , Naoko AIZAWA , Hiroyuki FUJINO , Hajime YAMADA
IPC: G01J5/12
CPC classification number: G01J5/10 , G01J5/02 , G01J5/023 , G01J5/024 , G01J5/04 , G01J5/045 , G01J5/046 , G01J5/34 , H01L37/02
Abstract: An infrared sensor includes a first substrate made of a thermoelectric conversion material and a second substrate. The first substrate is supported by posts made of an electrode material while being spaced apart from the second substrate. A sensing electrode and lead portions connected thereto are provided on the first substrate. The sensing electrode and the lead portions are covered with an infrared-absorbing film. The posts are connected to the lead portions, and external terminal connection electrodes are connected to the posts.
Abstract translation: 红外线传感器包括由热电转换材料和第二基板制成的第一基板。 第一衬底由与电极材料制成的柱支撑，同时与第二衬底间隔开。 感测电极和与其连接的引线部分设置在第一基板上。 感测电极和引线部分被红外线吸收膜覆盖。 柱连接到引线部分，并且外部端子连接电极连接到柱。
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Patent Agency Ranking
公开(公告)号：US20050035829A1
公开(公告)日：2005-02-17
申请号：US10913311
申请日：2004-08-09
Applicant: Keiichi Umeda , Hajime Yamada , Yoshimitsu Ushimi , Daisuke Nakamura
Inventor： Keiichi Umeda , Hajime Yamada , Yoshimitsu Ushimi , Daisuke Nakamura
IPC: H01L41/09 , H01L41/18 , H01L41/187 , H01L41/22 , H01L41/319 , H03H3/02 , H03H9/02 , H03H9/17 , H03H9/56
CPC classification number: H03H9/02094 , H03H3/02 , H03H9/173 , H03H9/174 , H03H2003/023
Abstract: An insulating film including an aluminum nitride film is provided on a support substrate to be supported thereby. Then, a lower electrode, a piezoelectric thin film, and an upper electrode are provided in that order on the aluminum nitride film. The piezoelectric film is disposed between the lower electrode and the upper electrode which oppose each other. Furthermore, the aluminum nitride film is subjected to a plasma treatment in an oxygen-containing atmosphere to form an oxide layer on the aluminum nitride film, the oxide layer being made smoother than the aluminum nitride film.
Abstract translation: 在支撑基板上设置包括氮化铝膜的绝缘膜，由此支撑。 然后，在氮化铝膜上依次设置下电极，压电薄膜和上电极。 压电膜设置在彼此相对的下电极和上电极之间。 此外，在含氧气氛中对氮化铝膜进行等离子体处理，以在氮化铝膜上形成氧化物层，使氧化物层比氮化铝膜更光滑。
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公开(公告)号：US20050168110A1
公开(公告)日：2005-08-04
申请号：US11094622
申请日：2005-03-30
Applicant: Hajime Yamada , Masaki Takeuchi , Hideki Kawamura , Hiroyuki Fujino , Yukio Yoshino , Ken-ichi Uesaka , Tadashi Nomura , Daisuke Nakamura , Yoshimitsu Ushimi , Takashi Hayashi
Inventor： Hajime Yamada , Masaki Takeuchi , Hideki Kawamura , Hiroyuki Fujino , Yukio Yoshino , Ken-ichi Uesaka , Tadashi Nomura , Daisuke Nakamura , Yoshimitsu Ushimi , Takashi Hayashi
CPC classification number: H03H9/174 , C23C14/10 , C23C14/35 , H03H3/02 , H03H3/04 , H03H9/02133 , H03H9/02149 , H03H9/173 , H03H9/564 , H03H9/568 , H04R17/00 , Y10T29/42 , Y10T29/49005 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49155 , Y10T29/49156
Abstract: A piezoelectric thin film resonator having a stabilized temperature characteristic of resonant frequency, a method for manufacturing the same, and a communication apparatus using the piezoelectric thin film resonator are provided. The piezoelectric thin film resonator is provided with a substrate having an opening, first and second insulation films which are provided on one surface of the substrate while covering the opening and which primarily include SiO2 and Al2O3, respectively, Al2O3 having oxygen defect and being in an amorphous state, and a piezoelectric thin film which is provided on the second insulation film and is sandwiched between electrodes and which primarily includes ZnO.
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公开(公告)号：US07663106B2
公开(公告)日：2010-02-16
申请号：US12264961
申请日：2008-11-05
Applicant: Yoshimitsu Ushimi , Naoko Aizawa , Hiroyuki Fujino , Hajime Yamada
Inventor： Yoshimitsu Ushimi , Naoko Aizawa , Hiroyuki Fujino , Hajime Yamada
IPC: G01J5/00
CPC classification number: G01J5/10 , G01J5/02 , G01J5/023 , G01J5/024 , G01J5/04 , G01J5/045 , G01J5/046 , G01J5/34 , H01L37/02
Abstract: An infrared sensor includes a first substrate made of a thermoelectric conversion material and a second substrate. The first substrate is supported by posts made of an electrode material while being spaced apart from the second substrate. A sensing electrode and lead portions connected thereto are provided on the first substrate. The sensing electrode and the lead portions are covered with an infrared-absorbing film. The posts are connected to the lead portions, and external terminal connection electrodes are connected to the posts.
Abstract translation: 红外线传感器包括由热电转换材料和第二基板制成的第一基板。 第一衬底由与电极材料制成的柱支撑，同时与第二衬底间隔开。 感测电极和与其连接的引线部分设置在第一基板上。 感测电极和引线部分被红外线吸收膜覆盖。 柱连接到引线部分，并且外部端子连接电极连接到柱。
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7.发明申请PIEZOELECTRIC RESONATOR, PIEZOELECTRIC FILTER, DUPLEXER, COMMUNICATION APPARATUS, AND METHOD FOR MANUFACTURING PIEZOELECTRIC RESONATOR 审中-公开压电谐振器，压电滤波器，双工器，通信装置和制造压电谐振器的方法公开(公告)号：US20070221494A1
公开(公告)日：2007-09-27
申请号：US11754897
申请日：2007-05-29
Applicant: Hajime YAMADA , Masaki TAKEUCHI , Hideki KAWAMURA , Hiroyuki FUJINO , Yukio YOSHINO , Ken-ichi UESAKA , Tadashi NOMURA , Daisuke NAKAMURA , Yoshimitsu USHIMI , Takashi HAYASHI
Inventor： Hajime YAMADA , Masaki TAKEUCHI , Hideki KAWAMURA , Hiroyuki FUJINO , Yukio YOSHINO , Ken-ichi UESAKA , Tadashi NOMURA , Daisuke NAKAMURA , Yoshimitsu USHIMI , Takashi HAYASHI
CPC classification number: H03H9/174 , C23C14/10 , C23C14/35 , H03H3/02 , H03H3/04 , H03H9/02133 , H03H9/02149 , H03H9/173 , H03H9/564 , H03H9/568 , H04R17/00 , Y10T29/42 , Y10T29/49005 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49155 , Y10T29/49156
Abstract: A piezoelectric thin film resonator having a stabilized temperature characteristic of resonant frequency, a method for manufacturing the same, and a communication apparatus using the piezoelectric thin film resonator are provided. The piezoelectric thin film resonator is provided with a substrate having an opening, first and second insulation films which are provided on one surface of the substrate while covering the opening and which primarily include SiO2 and Al2O3, respectively, Al2O3 having oxygen defect and being in an amorphous state, and a piezoelectric thin film which is provided on the second insulation film and is sandwiched between electrodes and which primarily includes ZnO.
Abstract translation: 提供具有稳定的谐振频率的温度特性的压电薄膜谐振器，其制造方法和使用该压电薄膜谐振器的通信装置。 压电薄膜谐振器设置有具有开口的第一绝缘膜和第二绝缘膜的基板，所述第一和第二绝缘膜设置在基板的一个表面上，同时覆盖开口并且主要包括SiO 2和Al 2 O 3分别具有氧缺陷并处于非晶状态的Al 2 O 3 N 3，以及压电薄膜 其设置在第二绝缘膜上并夹在电极之间并且主要包括ZnO。
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公开(公告)号：US07240410B2
公开(公告)日：2007-07-10
申请号：US11094622
申请日：2005-03-30
Applicant: Hajime Yamada , Masaki Takeuchi , Hideki Kawamura , Hiroyuki Fujino , Yukio Yoshino , Ken-ichi Uesaka , Tadashi Nomura , Daisuke Nakamura , Yoshimitsu Ushimi , Takashi Hayashi
Inventor： Hajime Yamada , Masaki Takeuchi , Hideki Kawamura , Hiroyuki Fujino , Yukio Yoshino , Ken-ichi Uesaka , Tadashi Nomura , Daisuke Nakamura , Yoshimitsu Ushimi , Takashi Hayashi
CPC classification number: H03H9/174 , C23C14/10 , C23C14/35 , H03H3/02 , H03H3/04 , H03H9/02133 , H03H9/02149 , H03H9/173 , H03H9/564 , H03H9/568 , H04R17/00 , Y10T29/42 , Y10T29/49005 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49155 , Y10T29/49156
Abstract: A piezoelectric thin film resonator having a stabilized temperature characteristic of resonant frequency, a method for manufacturing the same, and a communication apparatus using the piezoelectric thin film resonator are provided. The piezoelectric thin film resonator is provided with a substrate having an opening, first and second insulation films which are provided on one surface of the substrate while covering the opening and which primarily include SiO2 and Al2O3, respectively, Al2O3 having oxygen defect and being in an amorphous state, and a piezoelectric thin film which is provided on the second insulation film and is sandwiched between electrodes and which primarily includes ZnO.
Abstract translation: 提供具有稳定的谐振频率的温度特性的压电薄膜谐振器，其制造方法和使用该压电薄膜谐振器的通信装置。 压电薄膜谐振器设置有具有开口的第一绝缘膜和第二绝缘膜的基板，所述第一和第二绝缘膜设置在基板的一个表面上，同时覆盖开口并且主要包括SiO 2和Al 2 O 3分别具有氧缺陷并处于非晶状态的Al 2 O 3 N 3，以及压电薄膜 其设置在第二绝缘膜上并夹在电极之间并且主要包括ZnO。
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