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公开(公告)号：US07180390B2
公开(公告)日：2007-02-20
申请号：US10913311
申请日：2004-08-09
CPC分类号： H03H9/02094 , H03H3/02 , H03H9/173 , H03H9/174 , H03H2003/023
摘要： An insulating film including an aluminum nitride film is provided on a support substrate to be supported thereby. Then, a lower electrode, a piezoelectric thin film, and an upper electrode are provided in that order on the aluminum nitride film. The piezoelectric film is disposed between the lower electrode and the upper electrode which oppose each other. Furthermore, the aluminum nitride film is subjected to a plasma treatment in an oxygen-containing atmosphere to form an oxide layer on the aluminum nitride film, the oxide layer being made smoother than the aluminum nitride film.
摘要翻译： 在支撑基板上设置包括氮化铝膜的绝缘膜，由此支撑。 然后，在氮化铝膜上依次设置下电极，压电薄膜和上电极。 压电膜设置在彼此相对的下电极和上电极之间。 此外，在含氧气氛中对氮化铝膜进行等离子体处理，以在氮化铝膜上形成氧化物层，使氧化物层比氮化铝膜更光滑。
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公开(公告)号：US20050035829A1
公开(公告)日：2005-02-17
申请号：US10913311
申请日：2004-08-09
IPC分类号： H01L41/09 , H01L41/18 , H01L41/187 , H01L41/22 , H01L41/319 , H03H3/02 , H03H9/02 , H03H9/17 , H03H9/56
CPC分类号： H03H9/02094 , H03H3/02 , H03H9/173 , H03H9/174 , H03H2003/023
摘要： An insulating film including an aluminum nitride film is provided on a support substrate to be supported thereby. Then, a lower electrode, a piezoelectric thin film, and an upper electrode are provided in that order on the aluminum nitride film. The piezoelectric film is disposed between the lower electrode and the upper electrode which oppose each other. Furthermore, the aluminum nitride film is subjected to a plasma treatment in an oxygen-containing atmosphere to form an oxide layer on the aluminum nitride film, the oxide layer being made smoother than the aluminum nitride film.
摘要翻译： 在支撑基板上设置包括氮化铝膜的绝缘膜，由此支撑。 然后，在氮化铝膜上依次设置下电极，压电薄膜和上电极。 压电膜设置在彼此相对的下电极和上电极之间。 此外，在含氧气氛中对氮化铝膜进行等离子体处理，以在氮化铝膜上形成氧化物层，使氧化物层比氮化铝膜更光滑。
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3.发明授权Piezoelectric resonator, piezoelectric filter, duplexer, communication apparatus, and method for manufacturing piezoelectric resonator 有权压电谐振器，压电滤波器，双工器，通信装置和制造压电谐振器的方法公开(公告)号：US06906451B2
公开(公告)日：2005-06-14
申请号：US10329602
申请日：2002-12-27
申请人： Hajime Yamada , Masaki Takeuchi , Hideki Kawamura , Hiroyuki Fujino , Yukio Yoshino , Ken-ichi Uesaka , Tadashi Nomura , Daisuke Nakamura , Yoshimitsu Ushimi , Takashi Hayashi
发明人： Hajime Yamada , Masaki Takeuchi , Hideki Kawamura , Hiroyuki Fujino , Yukio Yoshino , Ken-ichi Uesaka , Tadashi Nomura , Daisuke Nakamura , Yoshimitsu Ushimi , Takashi Hayashi
CPC分类号： H03H9/174 , C23C14/10 , C23C14/35 , H03H3/02 , H03H3/04 , H03H9/02133 , H03H9/02149 , H03H9/173 , H03H9/564 , H03H9/568 , H04R17/00 , Y10T29/42 , Y10T29/49005 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49155 , Y10T29/49156
摘要： A piezoelectric thin film resonator having a stabilized temperature characteristic of resonant frequency, a method for manufacturing the same, and a communication apparatus using the piezoelectric thin film resonator are provided. The piezoelectric thin film resonator is provided with a substrate having an opening, first and second insulation films which are provided on one surface of the substrate while covering the opening and which primarily include SiO2 and Al2O3, respectively, Al2O3 having oxygen defect and being in an amorphous state, and a piezoelectric thin film which is provided on the second insulation film and is sandwiched between electrodes and which primarily includes ZnO.
摘要翻译： 提供具有稳定的谐振频率的温度特性的压电薄膜谐振器，其制造方法和使用该压电薄膜谐振器的通信装置。 压电薄膜谐振器设置有具有开口的第一绝缘膜和第二绝缘膜的基板，所述第一和第二绝缘膜设置在基板的一个表面上，同时覆盖开口并且主要包括SiO 2和Al 2 O 3分别具有氧缺陷并处于非晶状态的Al 2 O 3 N 3，以及压电薄膜 其设置在第二绝缘膜上并夹在电极之间并且主要包括ZnO。
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公开(公告)号：US20050168110A1
公开(公告)日：2005-08-04
申请号：US11094622
申请日：2005-03-30
申请人： Hajime Yamada , Masaki Takeuchi , Hideki Kawamura , Hiroyuki Fujino , Yukio Yoshino , Ken-ichi Uesaka , Tadashi Nomura , Daisuke Nakamura , Yoshimitsu Ushimi , Takashi Hayashi
发明人： Hajime Yamada , Masaki Takeuchi , Hideki Kawamura , Hiroyuki Fujino , Yukio Yoshino , Ken-ichi Uesaka , Tadashi Nomura , Daisuke Nakamura , Yoshimitsu Ushimi , Takashi Hayashi
CPC分类号： H03H9/174 , C23C14/10 , C23C14/35 , H03H3/02 , H03H3/04 , H03H9/02133 , H03H9/02149 , H03H9/173 , H03H9/564 , H03H9/568 , H04R17/00 , Y10T29/42 , Y10T29/49005 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49155 , Y10T29/49156
摘要： A piezoelectric thin film resonator having a stabilized temperature characteristic of resonant frequency, a method for manufacturing the same, and a communication apparatus using the piezoelectric thin film resonator are provided. The piezoelectric thin film resonator is provided with a substrate having an opening, first and second insulation films which are provided on one surface of the substrate while covering the opening and which primarily include SiO2 and Al2O3, respectively, Al2O3 having oxygen defect and being in an amorphous state, and a piezoelectric thin film which is provided on the second insulation film and is sandwiched between electrodes and which primarily includes ZnO.
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公开(公告)号：US07240410B2
公开(公告)日：2007-07-10
申请号：US11094622
申请日：2005-03-30
申请人： Hajime Yamada , Masaki Takeuchi , Hideki Kawamura , Hiroyuki Fujino , Yukio Yoshino , Ken-ichi Uesaka , Tadashi Nomura , Daisuke Nakamura , Yoshimitsu Ushimi , Takashi Hayashi
发明人： Hajime Yamada , Masaki Takeuchi , Hideki Kawamura , Hiroyuki Fujino , Yukio Yoshino , Ken-ichi Uesaka , Tadashi Nomura , Daisuke Nakamura , Yoshimitsu Ushimi , Takashi Hayashi
CPC分类号： H03H9/174 , C23C14/10 , C23C14/35 , H03H3/02 , H03H3/04 , H03H9/02133 , H03H9/02149 , H03H9/173 , H03H9/564 , H03H9/568 , H04R17/00 , Y10T29/42 , Y10T29/49005 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49155 , Y10T29/49156
摘要： A piezoelectric thin film resonator having a stabilized temperature characteristic of resonant frequency, a method for manufacturing the same, and a communication apparatus using the piezoelectric thin film resonator are provided. The piezoelectric thin film resonator is provided with a substrate having an opening, first and second insulation films which are provided on one surface of the substrate while covering the opening and which primarily include SiO2 and Al2O3, respectively, Al2O3 having oxygen defect and being in an amorphous state, and a piezoelectric thin film which is provided on the second insulation film and is sandwiched between electrodes and which primarily includes ZnO.
摘要翻译： 提供具有稳定的谐振频率的温度特性的压电薄膜谐振器，其制造方法和使用该压电薄膜谐振器的通信装置。 压电薄膜谐振器设置有具有开口的第一绝缘膜和第二绝缘膜的基板，所述第一和第二绝缘膜设置在基板的一个表面上，同时覆盖开口并且主要包括SiO 2和Al 2 O 3分别具有氧缺陷并处于非晶状态的Al 2 O 3 N 3，以及压电薄膜 其设置在第二绝缘膜上并夹在电极之间并且主要包括ZnO。
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公开(公告)号：US07663106B2
公开(公告)日：2010-02-16
申请号：US12264961
申请日：2008-11-05
IPC分类号： G01J5/00
CPC分类号： G01J5/10 , G01J5/02 , G01J5/023 , G01J5/024 , G01J5/04 , G01J5/045 , G01J5/046 , G01J5/34 , H01L37/02
摘要： An infrared sensor includes a first substrate made of a thermoelectric conversion material and a second substrate. The first substrate is supported by posts made of an electrode material while being spaced apart from the second substrate. A sensing electrode and lead portions connected thereto are provided on the first substrate. The sensing electrode and the lead portions are covered with an infrared-absorbing film. The posts are connected to the lead portions, and external terminal connection electrodes are connected to the posts.
摘要翻译： 红外线传感器包括由热电转换材料和第二基板制成的第一基板。 第一衬底由与电极材料制成的柱支撑，同时与第二衬底间隔开。 感测电极和与其连接的引线部分设置在第一基板上。 感测电极和引线部分被红外线吸收膜覆盖。 柱连接到引线部分，并且外部端子连接电极连接到柱。
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公开(公告)号：US20070035207A1
公开(公告)日：2007-02-15
申请号：US11583696
申请日：2006-10-20
申请人： Hideki Kawamura , Takahiro Oguchi , Keiichi Umeda , Hajime Yamada
发明人： Hideki Kawamura , Takahiro Oguchi , Keiichi Umeda , Hajime Yamada
IPC分类号： H01L41/08
CPC分类号： H03H9/02086 , H03H9/174
摘要： A thin-film piezoelectric resonator having a thin-film portion with a piezoelectric thin film disposed between a pair of opposing electrodes, an insulating layer formed on one of the pair of electrodes of the thin-film portion, and a substrate supporting the other electrode of the thin-film portion. The thin-film portion and the insulating layer together vibrate in at least one mode of second and higher harmonic modes, and an antinode in the at least one mode of the second and higher harmonic modes is located in the insulating layer.
摘要翻译： 一种薄膜压电谐振器，具有设置在一对相对电极之间的具有压电薄膜的薄膜部分，形成在薄膜部分的一对电极中的一个上的绝缘层和支撑另一个电极的基板 的薄膜部分。 薄膜部分和绝缘层一起在至少一种第二和高次谐波模式下振动，并且第二和高次谐波模式的至少一种模式中的波腹位于绝缘层中。
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8.发明授权公开(公告)号：US07504910B2
公开(公告)日：2009-03-17
申请号：US11583696
申请日：2006-10-20
申请人： Hideki Kawamura , Takahiro Oguchi , Keiichi Umeda , Hajime Yamada
发明人： Hideki Kawamura , Takahiro Oguchi , Keiichi Umeda , Hajime Yamada
CPC分类号： H03H9/02086 , H03H9/174
摘要： A thin-film piezoelectric resonator having a thin-film portion with a piezoelectric thin film disposed between a pair of opposing electrodes, an insulating layer formed on one of the pair of electrodes of the thin-film portion, and a substrate supporting the other electrode of the thin-film portion. The thin-film portion and the insulating layer together vibrate in at least one mode of second and higher harmonic modes, and an antinode in the at least one mode of the second and higher harmonic modes is located in the insulating layer.
摘要翻译： 一种薄膜压电谐振器，具有设置在一对相对电极之间的具有压电薄膜的薄膜部分，形成在薄膜部分的一对电极中的一个上的绝缘层和支撑另一个电极的基板 的薄膜部分。 薄膜部分和绝缘层一起在至少一种第二和高次谐波模式下振动，并且第二和高次谐波模式的至少一种模式中的波腹位于绝缘层中。
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9.发明授权Piezoelectric thin-film resonator, piezoelectric filter, and electronic component including the piezoelectric filter 有权压电薄膜谐振器，压电滤波器和包括压电滤波器的电子部件公开(公告)号：US07276994B2
公开(公告)日：2007-10-02
申请号：US11004687
申请日：2004-12-03
申请人： Masaki Takeuchi , Hajime Yamada , Hideki Kawamura , Daisuke Nakamura , Yukio Yoshino , Yoshihiko Gotoh , Seiichi Arai
发明人： Masaki Takeuchi , Hajime Yamada , Hideki Kawamura , Daisuke Nakamura , Yukio Yoshino , Yoshihiko Gotoh , Seiichi Arai
CPC分类号： H03H9/60 , H03H9/0095 , H03H9/02094 , H03H9/02102 , H03H9/02133 , H03H9/174 , H03H9/586 , H03H9/588
摘要： A piezoelectric thin-film resonator includes a supporting substrate. A piezoelectric thin-film is formed on the supporting substrate. A lower electrode and an upper electrode are formed with the piezoelectric thin-film therebetween. The stiffness of at least one of the lower and upper electrodes is higher than that of the piezoelectric thin-film.
摘要翻译： 压电薄膜谐振器包括支撑衬底。 在支撑基板上形成压电薄膜。 下电极和上电极之间形成有压电薄膜。 下电极和上电极中的至少一个的刚度高于压电薄膜的刚度。
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10.发明授权Piezoelectric thin-film resonator, piezoelectric filter, and electronic component including the piezoelectric filter 有权压电薄膜谐振器，压电滤波器和包括压电滤波器的电子部件公开(公告)号：US07002437B2
公开(公告)日：2006-02-21
申请号：US10456173
申请日：2003-06-06
CPC分类号： H03H9/02133 , H03H9/0095 , H03H9/02102 , H03H9/02149 , H03H9/174
摘要： A piezoelectric thin-film resonator includes a supporting substrate. A piezoelectric thin-film is formed on the supporting substrate. A lower electrode and an upper electrode are formed with the piezoelectric thin-film therebetween. The stiffness of at least one of the lower and upper electrodes is higher than that of the piezoelectric thin-film.
摘要翻译： 压电薄膜谐振器包括支撑衬底。 在支撑基板上形成压电薄膜。 下电极和上电极之间形成有压电薄膜。 下电极和上电极中的至少一个的刚度高于压电薄膜的刚度。
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