公开(公告)号：US6025252A

公开(公告)日：2000-02-15

申请号：US917266

申请日：1997-08-25

申请人： Masahiro Shindo ,  Daisuke Kosaka ,  Tetsuo Hikawa ,  Akira Takata ,  Yukihiro Ukai ,  Takashi Sawada ,  Toshifumi Asakawa

发明人： Masahiro Shindo ,  Daisuke Kosaka ,  Tetsuo Hikawa ,  Akira Takata ,  Yukihiro Ukai ,  Takashi Sawada ,  Toshifumi Asakawa

IPC分类号： B81B3/00 ,  C23C16/48 ,  C23C16/511 ,  C23C16/56 ,  G01L9/00 ,  G01P15/08 ,  H01H59/00 ,  H01J37/32 ,  H01L27/12 ,  H01L31/0376 ,  H01L31/078 ,  H01L31/18 ,  H02N1/00 ,  H01L31/06

CPC分类号： H01J37/32678 ,  B81C1/0038 ,  C23C16/48 ,  C23C16/486 ,  C23C16/511 ,  C23C16/56 ,  G01L9/0042 ,  G01P15/0802 ,  H01L27/12 ,  H01L27/1203 ,  H01L31/03762 ,  H01L31/0693 ,  H01L31/0725 ,  H01L31/073 ,  H01L31/078 ,  H01L31/1804 ,  H01L31/1828 ,  H01L31/186 ,  H02N1/002 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81C2201/0109 ,  G02F2001/136281 ,  H01H59/0009 ,  Y02E10/543 ,  Y02E10/544 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer (1104) of a single-crystalline Si substrate (1102) whose (100) plane is upwardly directed is irradiated with Ne atom currents from a plurality of prescribed directions, so that the crystal orientation of the uppermost layer (1104) is converted to such orientation that the (111) plane is upwardly directed. A masking member (106) is employed as a shielding member to anisotropically etch the substrate (1102) from its bottom surface, thereby forming a V-shaped groove (1112). At this time, the uppermost layer (1104) serves as an etching stopper. Thus, it is possible to easily manufacture a micromachine having a single-crystalline diaphragm having a uniform thickness. A micromachine having a complicated member such as a diagram which is made of a single-crystalline material can be easily manufactured through no junction.

公开(公告)号：US5895887A

公开(公告)日：1999-04-20

申请号：US897415

申请日：1997-07-21

申请人： Akira Takata ,  Tetsuo Hikawa ,  Takashi Sawada ,  Tom Dang-hsing Yiu ,  Ful-Long Ni

发明人： Akira Takata ,  Tetsuo Hikawa ,  Takashi Sawada ,  Tom Dang-hsing Yiu ,  Ful-Long Ni

IPC分类号： H01L27/04 ,  H01L21/82 ,  H01L21/822 ,  H01L23/485 ,  H01L23/50 ,  H01L27/10 ,  H01L23/02

CPC分类号： H01L24/06 ,  H01L23/50 ,  H01L24/49 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/45124 ,  H01L2224/48247 ,  H01L2224/48699 ,  H01L2224/49171 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01058 ,  H01L2924/01082 ,  H01L2924/13091 ,  H01L2924/3011

摘要： In order to reduce the chip size of a semiconductor device as well as to separate noises between at least two types of pads having different functions, power supply pins and ground pins are provided on opposite edges of a package with input address pins being arranged therebetween and output data pins being arranged outside the same. Control pins and a nonconnected excess pin are arranged in the center. This allows the package to omit wires and reduce chip size.

摘要翻译： 为了减少半导体器件的芯片尺寸以及在具有不同功能的至少两种类型的焊盘之间分离噪声，在封装的相对边缘上提供电源引脚和接地引脚，其中输入地址引脚布置在其间， 输出数据引脚布置在外部。 控制引脚和非连接的多余引脚布置在中心。 这允许封装省略电线并减少芯片尺寸。

公开(公告)号：US5738731A

公开(公告)日：1998-04-14

申请号：US298800

申请日：1994-08-31

申请人： Masahiro Shindo ,  Daisuke Kosaka ,  Tetsuo Hikawa ,  Akira Takata ,  Yukihiro Ukai ,  Takashi Sawada ,  Toshifumi Asakawa

发明人： Masahiro Shindo ,  Daisuke Kosaka ,  Tetsuo Hikawa ,  Akira Takata ,  Yukihiro Ukai ,  Takashi Sawada ,  Toshifumi Asakawa

IPC分类号： B81B3/00 ,  C23C16/48 ,  C23C16/511 ,  C23C16/56 ,  G01L9/00 ,  G01P15/08 ,  H01H59/00 ,  H01J37/32 ,  H01L27/12 ,  H01L31/0376 ,  H01L31/078 ,  H01L31/18 ,  H02N1/00 ,  H01L31/06

CPC分类号： H01J37/32678 ,  B81C1/0038 ,  C23C16/48 ,  C23C16/486 ,  C23C16/511 ,  C23C16/56 ,  G01L9/0042 ,  G01P15/0802 ,  H01L27/12 ,  H01L27/1203 ,  H01L31/03762 ,  H01L31/0693 ,  H01L31/0725 ,  H01L31/073 ,  H01L31/078 ,  H01L31/1804 ,  H01L31/1828 ,  H01L31/186 ,  H02N1/002 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81C2201/0109 ,  G02F2001/136281 ,  H01H59/0009 ,  Y02E10/543 ,  Y02E10/544 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A solar cell comprising: a first junction part having a first conductivity type first semiconductor film and a second conductivity type second semiconductor film formed on an upper surface of said first semiconductor film; and a second junction part having a first conductivity type third semiconductor film formed on an upper surface of said second semiconductor film and a second conductivity type fourth semiconductor formed on an upper surface of said third semiconductor film, said junction parts arranged from that having a larger forbidden band width along the direction of progress of light through said semiconductor layers, said first, second, third, and fourth semiconductor films being formed of single-crystalline filming; wherein an interlayer conductor prepared from a metal forming ohmic junctions with each of said junction parts and having a thickness capable of transmitting light therethrough is interposed between said first and second junction parts; and wherein said second semiconductor film arranged on one side of said interlayer conductor is different in crystal orientation from said third semiconductor film arranged on the other side of said interlayer conductor.

摘要翻译： 一种太阳能电池，包括：第一接合部，其具有形成在所述第一半导体膜的上表面上的第一导电型第一半导体膜和第二导电型第二半导体膜; 以及第二接合部，其具有形成在所述第二半导体膜的上表面上的第一导电类型的第三半导体膜和形成在所述第三半导体膜的上表面上的第二导电类型的第四半导体，所述接合部的布置具有较大的 沿着通过所述半导体层的光的进行方向的禁带宽度，所述第一，第二，第三和第四半导体膜由单晶成膜形成; 其中由形成欧姆结的金属制成的层间导体与每个所述接合部分并且具有能透过光的厚度的介质插入在所述第一和第二接合部分之间; 并且其中布置在所述层间导体的一侧上的所述第二半导体膜的晶体取向与布置在所述层间导体的另一侧上的所述第三半导体膜不同。

公开(公告)号：US5666304A

公开(公告)日：1997-09-09

申请号：US608194

申请日：1996-02-28

申请人： Tetsuo Hikawa ,  Akira Takata ,  Takashi Sawada

发明人： Tetsuo Hikawa ,  Akira Takata ,  Takashi Sawada

IPC分类号： G11C17/12 ,  G11C11/56 ,  G11C16/02 ,  G11C16/04 ,  G11C16/06 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/112 ,  H01L27/115 ,  G11C17/00

CPC分类号： H01L27/1126 ,  G11C11/56 ,  G11C11/5692 ,  G11C16/0483 ,  H01L27/112 ,  H01L27/11266 ,  G11C19/00 ,  G11C8/04

摘要： In order to improve the degree of storage data integration, side walls (32) are selectively formed on side surfaces of word lines (22) to serve as masks for changing ON-state current values of memory cells by changing widths or lengths of active regions (24) of the memory cells, thereby forming a plurality of types of memory cells having different electrical properties. Thus, storage data per memory cell is so multivalued that the number of memory cells is reduced.

公开(公告)号：US5640367A

公开(公告)日：1997-06-17

申请号：US609147

申请日：1996-02-28

申请人： Tetsuo Hikawa ,  Akira Takata ,  Takashi Sawada

发明人： Tetsuo Hikawa ,  Akira Takata ,  Takashi Sawada

IPC分类号： G11C17/12 ,  G11C11/56 ,  G11C16/02 ,  G11C16/04 ,  G11C16/06 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/112 ,  H01L27/115 ,  G11C8/00

CPC分类号： H01L27/1126 ,  G11C11/56 ,  G11C11/5692 ,  G11C16/0483 ,  H01L27/112 ,  H01L27/11266 ,  G11C19/00 ,  G11C8/04

摘要： In order to improve the degree of storage data integration, side walls (32) are selectively formed on side surfaces of word lines (22) to serve as masks for changing ON-state current values of memory cells by changing widths or lengths of active regions (24) of the memory cells, thereby forming a plurality of types of memory cells having different electrical properties. Thus, storage data per memory cell is so multivalued that the number of memory cells is reduced.

摘要翻译： 为了提高存储数据整合的程度，在字线（22）的侧面选择性地形成侧壁（32），以用作通过改变有源区的宽度或长度来改变存储单元的导通状态电流值的掩模 （24），从而形成具有不同电特性的多种类型的存储单元。 因此，每个存储器单元的存储数据是多值的，使得存储器单元的数量减少。

公开(公告)号：US4634494A

公开(公告)日：1987-01-06

申请号：US760135

申请日：1985-07-29

申请人： Satoru Taji ,  Norio Yoshida ,  Tetsuo Hikawa

发明人： Satoru Taji ,  Norio Yoshida ,  Tetsuo Hikawa

IPC分类号： H01L21/306 ,  C03C15/00 ,  C03C23/00 ,  B44C1/22 ,  C03C25/06

CPC分类号： C03C3/19 ,  C03C15/00 ,  C03C23/0055 ,  Y10S438/978

摘要： The etch rate of phosphosilicate glass becomes lowered as boron ions are implanted therein. In accordance with the principle of the present invention, boron ions are implanted into a phosphosilicate glass film selectively in location or concentration and the thus boron-implanted phosphosilicate glass film is etched by an etchant, for example buffered hydrofluoric acid solution, to etch an intended portion of the phosphosilcate glass film preferentially thereby defining a hole, such as a contact hole, or substantially flat surface.

摘要翻译： 磷硅玻璃的蚀刻速率随着硼离子注入而降低。 根据本发明的原理，在位置或浓度上选择性地将硼离子注入磷硅玻璃膜中，并且通过蚀刻剂（例如缓冲氢氟酸溶液）蚀刻硼注入的磷硅酸盐玻璃膜，以蚀刻预期的 磷硅酸盐玻璃膜的一部分优先从而限定孔，例如接触孔或基本平坦的表面。

公开(公告)号：US06225668B1

公开(公告)日：2001-05-01

申请号：US08917268

申请日：1997-08-25

申请人： Masahiro Shindo ,  Daisuke Kosaka ,  Tetsuo Hikawa ,  Akira Takata ,  Yukihiro Ukai ,  Takashi Sawada ,  Toshifumi Asakawa

发明人： Masahiro Shindo ,  Daisuke Kosaka ,  Tetsuo Hikawa ,  Akira Takata ,  Yukihiro Ukai ,  Takashi Sawada ,  Toshifumi Asakawa

IPC分类号： H01L2336

CPC分类号： H01J37/32678 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81C1/0038 ,  B81C2201/0109 ,  C23C16/48 ,  C23C16/486 ,  C23C16/511 ,  C23C16/56 ,  G01L9/0042 ,  G01P15/0802 ,  G02F2001/136281 ,  H01H59/0009 ,  H01L27/12 ,  H01L27/1203 ,  H01L31/03762 ,  H01L31/0693 ,  H01L31/0725 ,  H01L31/073 ,  H01L31/078 ,  H01L31/1804 ,  H01L31/1828 ,  H01L31/186 ,  H02N1/002 ,  Y02E10/543 ,  Y02E10/544 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer (1104) of a single-crystalline Si substrate (1102) whose (100) plane is upwardly directed is irradiated with Ne atom currents from a plurality of prescribed directions, so that the crystal orientation of the uppermost layer (1104) is converted to such orientation that the (111) plane is upwardly directed. A masking member (106) is employed as a shielding member to anisotropically etch the substrate (1102) from its bottom surface, thereby forming a V-shaped groove (1112). At this time, the uppermost layer (1104) serves as an etching stopper. Thus, it is possible to easily manufacture a micromachine having a single-crystalline diaphragm having a uniform thickness. A micromachine having a complicated member such as a diagram which is made of a single-crystalline material can be easily manufactured through no junction.

摘要翻译： 为了容易且精确地制造包括由单晶材料制成且具有复杂结构的构件的微加工机构，（100）面向上的单晶Si衬底（1102）的最上层（1104） 从多个规定方向对Ne原子电流进行照射，使得最上层（1104）的晶体取向被转换为（111）面向上方向的取向。 采用掩模构件（106）作为屏蔽构件，从其底面各向异性地蚀刻衬底（1102），从而形成V形槽（1112）。 此时，最上层（1104）用作蚀刻停止器。 因此，可以容易地制造具有均匀厚度的单晶隔膜的微加工机。 具有复合构件的微机械，例如由单晶材料制成的图可以容易地通过无接合制造。

公开(公告)号：US5563844A

公开(公告)日：1996-10-08

申请号：US411983

申请日：1995-03-28

申请人： Akira Takata ,  Tetsuo Hikawa ,  Takashi Sawada ,  Tom Dang-hsing Yiu ,  Ful-Long Ni

发明人： Akira Takata ,  Tetsuo Hikawa ,  Takashi Sawada ,  Tom Dang-hsing Yiu ,  Ful-Long Ni

IPC分类号： H01L27/10 ,  G11C8/04 ,  G11C17/00 ,  G11C17/10 ,  G11C8/00

CPC分类号： G11C17/10 ,  G11C8/04

摘要： In order to improve area efficiency of a mask ROM, a head address is inputted from a common pad (204) only in an initial access, so that addresses are thereafter changed by an internal counter (212). Data output is carried out through the common pad (204). Wires are employed for address input and data output in common, thereby remarkably reducing the number of wires.

摘要翻译： 为了提高掩模ROM的面积效率，仅在初始访问中从公共焊盘（204）输入头地址，于是之后通过内部计数器（212）改变地址。 数据输出通过公共焊盘（204）进行。 电线用于地址输入和数据输出，从而显着减少了电线数量。

公开(公告)号：US6137120A

公开(公告)日：2000-10-24

申请号：US918010

申请日：1997-08-27

申请人： Masahiro Shindo ,  Daisuke Kosaka ,  Tetsuo Hikawa ,  Akira Takata ,  Yukihiro Ukai ,  Takashi Sawada ,  Toshifumi Asakawa

发明人： Masahiro Shindo ,  Daisuke Kosaka ,  Tetsuo Hikawa ,  Akira Takata ,  Yukihiro Ukai ,  Takashi Sawada ,  Toshifumi Asakawa

IPC分类号： B81B3/00 ,  C23C16/48 ,  C23C16/511 ,  C23C16/56 ,  G01L9/00 ,  G01P15/08 ,  H01H59/00 ,  H01J37/32 ,  H01L27/12 ,  H01L31/0376 ,  H01L31/078 ,  H01L31/18 ,  H02N1/00 ,  H01L29/04 ,  H01L31/036

CPC分类号： H01J37/32678 ,  B81C1/0038 ,  C23C16/48 ,  C23C16/486 ,  C23C16/511 ,  C23C16/56 ,  G01L9/0042 ,  G01P15/0802 ,  H01L27/12 ,  H01L27/1203 ,  H01L31/03762 ,  H01L31/0693 ,  H01L31/0725 ,  H01L31/073 ,  H01L31/078 ,  H01L31/1804 ,  H01L31/1828 ,  H01L31/186 ,  H02N1/002 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81C2201/0109 ,  G02F2001/136281 ,  H01H59/0009 ,  Y02E10/543 ,  Y02E10/544 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer (1104) of a single-crystalline Si substrate (1102) whose (100) plane is upwardly directed is irradiated with Ne atom currents from a plurality of prescribed directions, so that the crystal orientation of the uppermost layer (1104) is converted to such orientation that the (111) plane is upwardly directed. A masking member (106) is employed as a shielding member to anisotropically etch the substrate (1102) from its bottom surface, thereby forming a V-shaped groove (1112). At this time, the uppermost layer (1104) serves as an etching stopper. Thus, it is possible to easily manufacture a micromachine having a single-crystalline diaphragm having a uniform thickness. A micromachine having a complicated member such as a diagram which is made of a single-crystalline material can be easily manufactured through no junction.

摘要翻译： 为了容易且精确地制造包括由单晶材料制成且具有复杂结构的构件的微加工机构，（100）面向上的单晶Si衬底（1102）的最上层（1104） 从多个规定方向对Ne原子电流进行照射，使得最上层（1104）的晶体取向被转换为（111）面向上方向的取向。 采用掩模构件（106）作为屏蔽构件，从其底面各向异性地蚀刻衬底（1102），从而形成V形槽（1112）。 此时，最上层（1104）用作蚀刻停止器。 因此，可以容易地制造具有均匀厚度的单晶隔膜的微加工机。 具有复合构件的微机械，例如由单晶材料制成的图可以容易地通过无接合制造。

公开(公告)号：US6106734A

公开(公告)日：2000-08-22

申请号：US917267

申请日：1997-08-25

申请人： Masahiro Shindo ,  Daisuke Kosaka ,  Tetsuo Hikawa ,  Akira Takata ,  Yukihiro Ukai ,  Takashi Sawada ,  Toshifumi Asakawa

发明人： Masahiro Shindo ,  Daisuke Kosaka ,  Tetsuo Hikawa ,  Akira Takata ,  Yukihiro Ukai ,  Takashi Sawada ,  Toshifumi Asakawa

IPC分类号： B81B3/00 ,  C23C16/48 ,  C23C16/511 ,  C23C16/56 ,  G01L9/00 ,  G01P15/08 ,  H01H59/00 ,  H01J37/32 ,  H01L27/12 ,  H01L31/0376 ,  H01L31/078 ,  H01L31/18 ,  H02N1/00 ,  H01L21/302

CPC分类号： H01J37/32678 ,  B81C1/0038 ,  C23C16/48 ,  C23C16/486 ,  C23C16/511 ,  C23C16/56 ,  G01L9/0042 ,  G01P15/0802 ,  H01L27/12 ,  H01L27/1203 ,  H01L31/03762 ,  H01L31/0693 ,  H01L31/0725 ,  H01L31/073 ,  H01L31/078 ,  H01L31/1804 ,  H01L31/1828 ,  H01L31/186 ,  H02N1/002 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81C2201/0109 ,  G02F2001/136281 ,  H01H59/0009 ,  Y02E10/543 ,  Y02E10/544 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer (1104) of a single-crystalline Si substrate (1102) whose (100) plane is upwardly directed is irradiated with Ne atom currents from a plurality of prescribed directions, so that the crystal orientation of the uppermost layer (1104) is converted to such orientation that the (111) plane is upwardly directed. A masking member (106) is employed as a shielding member to anisotropically etch the substrate (1102) from its bottom surface, thereby forming a V-shaped groove (1112). At this time, the uppermost layer (1104) serves as an etching stopper. Thus, it is possible to easily manufacture a micromachine having a single-crystalline diaphragm having a uniform thickness. A micromachine having a complicated member such as a diaphragm which is made of a single-crystalline material can be easily manufactured through no junction.

摘要翻译： 为了容易且精确地制造包括由单晶材料制成且具有复杂结构的构件的微加工机构，（100）面向上的单晶Si衬底（1102）的最上层（1104） 从多个规定方向对Ne原子电流进行照射，使得最上层（1104）的晶体取向被转换为（111）面向上方向的取向。 采用掩模构件（106）作为屏蔽构件，从其底面各向异性地蚀刻衬底（1102），从而形成V形槽（1112）。 此时，最上层（1104）用作蚀刻停止器。 因此，可以容易地制造具有均匀厚度的单晶隔膜的微加工机。 具有由单晶材料制成的诸如隔膜的复杂构件的微加工机可以容易地通过无接合制造。