公开(公告)号：US08685866B2

公开(公告)日：2014-04-01

申请号：US12822317

申请日：2010-06-24

申请人： Sadayoshi Horii ,  Atsushi Sano ,  Masahito Kitamura ,  Yoshitake Kato

发明人： Sadayoshi Horii ,  Atsushi Sano ,  Masahito Kitamura ,  Yoshitake Kato

IPC分类号： H01L21/31

CPC分类号： H01L21/3141 ,  C23C16/40 ,  C23C16/403 ,  C23C16/405 ,  C23C16/4412 ,  C23C16/45531 ,  C23C16/45561 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/0228

摘要： A method of manufacturing a semiconductor device including alternately repeating a process of forming a first metal oxide film including a first metal element and a process of forming a second metal oxide film including a second metal element on a substrate accommodated in a processing chamber, so as to form a third metal oxide film including the first and second metal elements with a predetermined composition ratio on the substrate. One of the first and second metal elements of the third metal oxide film has a concentration higher than a concentration of the other, and one of the first and second metal oxide films including the higher-concentration metal element is formed in a chemical vapor deposition (CVD) mode or an atomic layer deposition (ALD) saturation mode, and the other of the first and second metal oxide films is formed in an ALD unsaturation mode.

摘要翻译： 一种制造半导体器件的方法，包括交替地重复形成包括第一金属元素的第一金属氧化物膜的工艺和在容纳在处理室中的基板上形成包括第二金属元素的第二金属氧化物膜的工艺，以便 在衬底上形成具有预定组成比的第一和第二金属元素的第三金属氧化物膜。 第三金属氧化物膜的第一和第二金属元素中的一个具有比另一个的浓度高的浓度，并且包括高浓度金属元素的第一和第二金属氧化物膜中的一个在化学气相沉积中形成 CVD）模式或原子层沉积（ALD）饱和模式，并且第一和第二金属氧化物膜中的另一个以ALD不饱和模式形成。

公开(公告)号：US20070264840A1

公开(公告)日：2007-11-15

申请号：US11663179

申请日：2005-10-14

申请人： Hideharu Itatani ,  Hidehiro Yanai ,  Sadayoshi Horii ,  Atsushi Sano

发明人： Hideharu Itatani ,  Hidehiro Yanai ,  Sadayoshi Horii ,  Atsushi Sano

IPC分类号： H01L21/00 ,  B05C13/00

CPC分类号： C23C16/4412

摘要： To prevent particles from generating by reducing a contact-gas area and improve a purge efficiency by reducing a flow passage capacity. There is provided a substrate processing apparatus, comprising a processing chamber 1 for processing a substrate 2; a substrate carrying port 10 provided on a sidewall of the processing chamber 1, for carrying-in/carrying-out the substrate 2 to/from the processing chamber 1; a holder provided so as to be lifted and lowered in the processing chamber 1, for holding the substrate 2; supply ports 3 and 4 provided above the holder, for supplying gas into the processing chamber 1; an exhaust duct 35 provided on the peripheral part of the holder, for exhausting the gas supplied into the processing chamber 1; and an exhaust port 5 provided below an upper surface of the exhaust duct 35 when the substrate is processed, for exhausting the gas discharged by the exhaust duct 35 outside the processing chamber 1, wherein at least a part of a member constituting the exhaust duct 35 is provided so as to be lifted and lowered.

摘要翻译： 为了防止通过减少接触气体区域而产生颗粒，并通过降低流通能力来提高吹扫效率。 提供了一种基板处理装置，包括：处理基板2的处理室1; 设置在处理室1的侧壁上的用于将基板2输入/移出处理室1的基板输送口10; 设置成在处理室1中升降的保持件，用于保持基板2; 供应口3和4设置在保持器上方，用于将气体供应到处理室1中; 设置在保持器的周边部分上的用于排出供给到处理室1中的气体的排气管道35; 以及在处理基板时设置在排气管道35的上表面下方的排气口5，用于将排气管道35排出的气体排出到处理室1外部，其中构成排气管道35的构件的至少一部分 被提供以被提升和降低。

公开(公告)号：US07723245B2

公开(公告)日：2010-05-25

申请号：US11791222

申请日：2005-11-29

申请人： Atsushi Sano ,  Sadayoshi Horii ,  Hideharu Itatani ,  Katsuhiko Yamamoto

发明人： Atsushi Sano ,  Sadayoshi Horii ,  Hideharu Itatani ,  Katsuhiko Yamamoto

IPC分类号： H01L21/31

CPC分类号： H01L21/02148 ,  C23C16/401 ,  C23C16/45523 ,  H01L21/0228 ,  H01L21/31604

摘要： The ability to control a concentration ratio of a metal and silicon in a metal silicate film is improved, allowing a high-quality semiconductor device to be manufactured.A step is provided for supplying a first raw material, which contains a metal atom, and a second raw material, which contains a silicon atom and a nitrogen atom, into a processing chamber (4); and forming on a substrate (30) a metal silicate film containing the metal atom and silicon atom. A raw material supply ratio of the first and second raw materials is controlled in the step of forming a metal silicate film, thereby controlling a concentration ratio of the metal and silicon in the resulting metal silicate film.

摘要翻译： 提高了控制金属硅酸盐膜中的金属和硅的浓度比的能力，能够制造高品质的半导体装置。 提供了将含有金属原子的第一原料和含有硅原子和氮原子的第二原料供给到处理室（4）中的步骤; 以及在基板（30）上形成含有所述金属原子和硅原子的金属硅酸盐膜。 在形成金属硅酸盐膜的步骤中控制第一和第二原料的原料供给比，从而控制所得金属硅酸盐膜中的金属和硅的浓度比。

公开(公告)号：US20090233429A1

公开(公告)日：2009-09-17

申请号：US12293884

申请日：2007-05-16

申请人： Dai Ishikawa ,  Sadayoshi Horii ,  Atsushi Sano

发明人： Dai Ishikawa ,  Sadayoshi Horii ,  Atsushi Sano

IPC分类号： H01L21/31 ,  H01L21/28 ,  C23C16/513

CPC分类号： H01L21/02332 ,  C23C16/308 ,  C23C16/401 ,  C23C16/45525 ,  C23C16/54 ,  C23C16/56 ,  H01J37/32009 ,  H01J37/32541 ,  H01J37/3266 ,  H01L21/02148 ,  H01L21/02205 ,  H01L21/02216 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/3145 ,  H01L21/31645 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/823842 ,  H01L29/513 ,  H01L29/517

摘要： Nitrogen supplied into the high dielectric constant film is prevented from leaving from the film.A semiconductor device manufacturing method, includes the steps of: nitriding a high dielectric constant film, formed on a substrate by using plasma, heat treating the nitrided high dielectric constant film, and transferring the heat treated substrate, wherein the nitriding step and the heat treating step are performed consecutively or simultaneously in the same substrate processing apparatus without exposing the substrate to air, and the step of transferring the substrate is performed while, the substrate is exposed to air.

摘要翻译： 供给到高介电常数膜中的氮被防止从膜中离开。 一种半导体器件制造方法，包括以下步骤：通过使用等离子体对形成在基板上的高介电常数膜进行氮化，对所述氮化高介电常数膜进行热处理，并转移所述热处理基板，其中所述氮化步骤和所述热处理 在相同的基板处理装置中连续或同时地执行步骤，而不将基板暴露于空气中，并且在基板暴露于空气的同时进行基板的转印步骤。

公开(公告)号：US07531467B2

公开(公告)日：2009-05-12

申请号：US10574571

申请日：2005-01-21

申请人： Atsushi Sano ,  Sadayoshi Horii ,  Hideharu Itatani ,  Masayuki Asai

发明人： Atsushi Sano ,  Sadayoshi Horii ,  Hideharu Itatani ,  Masayuki Asai

IPC分类号： H01L21/31

CPC分类号： H01L21/02148 ,  C23C16/34 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/31645 ,  H01L21/3185

摘要： To provide a manufacturing method of a semiconductor device and a substrate processing apparatus capable of easily controlling a nitrogen concentration distribution in a film containing a metal atom and a silicon atom, and manufacturing a high quality semiconductor device.The method comprises a step of forming a film containing the metal atom and the silicon atom on a substrate 30 in a reaction chamber 4, and performing a nitriding process for the film, wherein the film is formed by changing a silicon concentration at least in two stages in the step of forming a film.

摘要翻译： 提供能够容易地控制含有金属原子和硅原子的膜的氮浓度分布的半导体装置的制造方法和基板处理装置，以及制造高品质的半导体装置。 该方法包括在反应室4中在基板30上形成含有金属原子和硅原子的膜，并对膜进行氮化处理的步骤，其中通过将硅浓度至少改变为二 形成薄膜步骤的阶段。

公开(公告)号：US07579276B2

公开(公告)日：2009-08-25

申请号：US11663179

申请日：2005-10-14

申请人： Hideharu Itatani ,  Hidehiro Yanai ,  Sadayoshi Horii ,  Atsushi Sano

发明人： Hideharu Itatani ,  Hidehiro Yanai ,  Sadayoshi Horii ,  Atsushi Sano

IPC分类号： H01L21/44

CPC分类号： C23C16/4412

摘要： To prevent particles from generating by reducing a contact-gas area and improve a purge efficiency by reducing a flow passage capacity. There is provided a substrate processing apparatus, comprising a processing chamber 1 for processing a substrate 2; a substrate carrying port 10 provided on a sidewall of the processing chamber 1, for carrying-in/carrying-out the substrate 2 to/from the processing chamber 1; a holder provided so as to be lifted and lowered in the processing chamber 1, for holding the substrate 2; supply ports 3 and 4 provided above the holder, for supplying gas into the processing chamber 1; an exhaust duct 35 provided on the peripheral part of the holder, for exhausting the gas supplied into the processing chamber 1; and an exhaust port 5 provided below an upper surface of the exhaust duct 35 when the substrate is processed, for exhausting the gas discharged by the exhaust duct 35 outside the processing chamber 1, wherein at least a part of a member constituting the exhaust duct 35 is provided so as to be lifted and lowered.

摘要翻译： 为了防止通过减少接触气体区域而产生颗粒，并通过降低流通能力来提高吹扫效率。 提供了一种基板处理装置，包括：处理基板2的处理室1; 设置在处理室1的侧壁上的用于将基板2输入/移出处理室1的基板输送口10; 设置成在处理室1中升降的保持件，用于保持基板2; 供应口3和4设置在保持器上方，用于将气体供应到处理室1中; 设置在保持器的周边部分上的用于排出供给到处理室1中的气体的排气管道35; 以及在处理基板时设置在排气管道35的上表面下方的排气口5，用于将排气管道35排出的气体排出到处理室1外部，其中构成排气管道35的构件的至少一部分 被提供以被提升和降低。

公开(公告)号：US07524766B2

公开(公告)日：2009-04-28

申请号：US10521248

申请日：2003-07-15

申请人： Hideharu Itatani ,  Sadayoshi Horii ,  Masayuki Asai ,  Atsushi Sano

发明人： Hideharu Itatani ,  Sadayoshi Horii ,  Masayuki Asai ,  Atsushi Sano

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： C23C16/45542 ,  C23C16/0272 ,  H01L28/55 ,  H01L28/60 ,  H01L28/90

摘要： To obtain a conductive metal film having superior step coverage, adhesiveness, and high productivity. A conductive metal film or metal oxidized film suitable as a capacitor electrode is formed on a substrate by performing an excited-gas supplying step after a source gas supplying step. In the source gas supplying step, gas obtained by vaporizing an organic source is supplied to the substrate, and the gas thus supplied is allowed to be adsorbed on the substrate. In the excited-gas supplying step, oxygen or nitrogen containing gas excited by plasma is supplied to the substrate to decompose the source adsorbed on the substrate, thus forming a film. An initial film-forming stop is a step of forming the film by repeating the source gas supplying step and the excited-gas supplying step once or multiple times. A desired thickness can be obtained by one step of the initial film-forming step. However, thereafter, in addition to the initial film-forming step, the film-forming step may be two steps by performing the main film-forming step of simultaneously supplying the gas obtained by vaporizing the organic source and oxygen containing gas or nitrogen containing gas not excited by plasma by using a thermal CVD method.

摘要翻译： 以获得具有优异的台阶覆盖率，粘合性和高生产率的导电金属膜。 通过在源气体供给工序之后进行激励气体供给工序，在基板上形成适合作为电容电极的导电性金属膜或金属氧化膜。 在原料气体供给工序中，将通过汽化有机源得到的气体供给到基板，由此供给的气体被吸附在基板上。 在激励气体供给步骤中，将由等离子体激发的含氧气体或氮气的气体供给到基板，以分解吸附在基板上的源，从而形成膜。 初始成膜停止是通过重复源气体供给步骤和激发气体供给步骤一次或多次来形成膜的步骤。 通过初始成膜步骤的一个步骤可以获得所需的厚度。 然而，此后，除了初始成膜步骤之外，成膜步骤可以分两步进行主要成膜步骤：同时供给通过蒸发有机源和含氧气体或含氮气体获得的气体 不使用热CVD法等离子体激发。

公开(公告)号：US20080032514A1

公开(公告)日：2008-02-07

申请号：US11791222

申请日：2005-11-29

申请人： Atsushi Sano ,  Sadayoshi Horii ,  Hideharu Itatani ,  Katsuhiko Yamamoto

发明人： Atsushi Sano ,  Sadayoshi Horii ,  Hideharu Itatani ,  Katsuhiko Yamamoto

IPC分类号： H01L21/31 ,  C23C16/00

CPC分类号： H01L21/02148 ,  C23C16/401 ,  C23C16/45523 ,  H01L21/0228 ,  H01L21/31604

摘要： The ability to control a concentration ratio of a metal and silicon in a metal silicate film is improved, allowing a high-quality semiconductor device to be manufactured. A step is provided for supplying a first raw material, which contains a metal atom, and a second raw material, which contains a silicon atom and a nitrogen atom, into a processing chamber (4); and forming on a substrate (30) a metal silicate film containing the metal atom and silicon atom. A raw material supply ratio of the first and second raw materials is controlled in the step of forming a metal silicate film, thereby controlling a concentration ratio of the metal and silicon in the resulting metal silicate film.

摘要翻译： 提高了控制金属硅酸盐膜中的金属和硅的浓度比的能力，能够制造高品质的半导体装置。 提供了将含有金属原子的第一原料和含有硅原子和氮原子的第二原料供给到处理室（4）中的步骤; 以及在基板（30）上形成含有所述金属原子和硅原子的金属硅酸盐膜。 在形成金属硅酸盐膜的步骤中控制第一和第二原料的原料供给比，从而控制所得金属硅酸盐膜中的金属和硅的浓度比。

公开(公告)号：US20070042581A1

公开(公告)日：2007-02-22

申请号：US10574571

申请日：2005-01-21

申请人： Atsushi Sano ,  Sadayoshi Horii ,  Hideharu Itatani ,  Masayuki Asai

发明人： Atsushi Sano ,  Sadayoshi Horii ,  Hideharu Itatani ,  Masayuki Asai

IPC分类号： H01L21/24

CPC分类号： H01L21/02148 ,  C23C16/34 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/31645 ,  H01L21/3185

摘要： To provide a manufacturing method of a semiconductor device and a substrate processing apparatus capable of easily controlling a nitrogen concentration distribution in a film containing a metal atom and a silicon atom, and manufacturing a high quality semiconductor device. The method comprises a step of forming a film containing the metal atom and the silicon atom on a substrate 30 in a reaction chamber 4, and performing a nitriding process for the film, wherein the film is formed by changing a silicon concentration at least in two stages in the step of forming a film.

摘要翻译： 提供能够容易地控制含有金属原子和硅原子的膜的氮浓度分布的半导体装置的制造方法和基板处理装置，以及制造高品质的半导体装置。 该方法包括在反应室4中在基板30上形成含有金属原子和硅原子的膜，并对膜进行氮化处理的步骤，其中通过将硅浓度至少改变为二 形成薄膜步骤的阶段。

公开(公告)号：US20050250341A1

公开(公告)日：2005-11-10

申请号：US10521248

申请日：2003-07-15

申请人： Hideharu Itatani ,  Sadayoshi Horii ,  Masayuki Asai ,  Atsushi Sano

发明人： Hideharu Itatani ,  Sadayoshi Horii ,  Masayuki Asai ,  Atsushi Sano

IPC分类号： C23C16/44 ,  C23C16/455 ,  H01L21/02 ,  H01L21/31 ,  H01L21/469

CPC分类号： C23C16/45542 ,  C23C16/0272 ,  H01L28/55 ,  H01L28/60 ,  H01L28/90

摘要： To obtain a conductive metal film having superior step coverage, adhesiveness, and high productivity. A conductive metal film or metal oxidized film suitable as a capacitor electrode is formed on a substrate by performing an excited-gas supplying step after a source gas supplying step. In the source gas supplying step, gas obtained by vaporizing an organic source is supplied to the substrate, and the gas thus supplied is allowed to be adsorbed on the substrate. In the excited-gas supplying step, oxygen or nitrogen containing gas excited by plasma is supplied to the substrate to decompose the source adsorbed on the substrate, thus forming a film. An initial film-forming stop is a step of forming the film by repeating the source gas supplying step and the excited-gas supplying step once or multiple times. A desired thickness can be obtained by one step of the initial film-forming step. However, thereafter, in addition to the initial film-forming step, the film-forming step may be two steps by performing the main film-forming step of simultaneously supplying the gas obtained by vaporizing the organic source and oxygen containing gas or nitrogen containing gas not excited by plasma by using a thermal CVD method.

摘要翻译： 以获得具有优异的台阶覆盖率，粘合性和高生产率的导电金属膜。 通过在源气体供给工序之后进行激励气体供给工序，在基板上形成适合作为电容电极的导电性金属膜或金属氧化膜。 在原料气体供给工序中，将通过汽化有机源得到的气体供给到基板，由此供给的气体被吸附在基板上。 在激励气体供给步骤中，将由等离子体激发的含氧气体或氮气的气体供给到基板，以分解吸附在基板上的源，从而形成膜。 初始成膜停止是通过重复源气体供给步骤和激发气体供给步骤一次或多次来形成膜的步骤。 通过初始成膜步骤的一个步骤可以获得所需的厚度。 然而，此后，除了初始成膜步骤之外，成膜步骤可以分两步进行主要成膜步骤：同时供给通过蒸发有机源和含氧气体或含氮气体获得的气体 不使用热CVD法等离子体激发。