公开(公告)号：US20060276055A1

公开(公告)日：2006-12-07

申请号：US10645908

申请日：2003-08-22

申请人： Yoichiro Numasawa ,  Yukinobu Murao

发明人： Yoichiro Numasawa ,  Yukinobu Murao

IPC分类号： H01L21/00

CPC分类号： C23C16/24 ,  C23C16/56 ,  Y10S977/814

摘要： A substrate is set at a predetermined temperature in a plasma treatment chamber, then the inside of the plasma treatment chamber is regulated at a reduced pressure containing at least a silicon hydride gas and a hydrogen gas, a high-frequency electric field is applied to form a silicon film of nanometer scale thickness composed of fine silicon crystals and amorphous silicon on the substrate. Thereafter, application of the high-frequency electric field is terminated, then the inside of the plasma treatment chamber is replaced by an oxidizing or nitriding gas, and a high-frequency electric field is applied again for plasma oxidizing treatment or plasma nitriding treatment of the silicon film formed on the substrate. Thereby, a silicon nanocrystalline structure can be formed on a silicon substrate by using a process of producing silicon integrated circuits with achieving high luminous efficiency, and terminating reliably with oxygen or nitrogen on the surface thereof. According to the method of the present invention, the particle diameter of the oxygen- or nitrogen-terminated silicon nanocrystals can be regulated in an accuracy of 1 to 2 nm, the density thereof per unit area can be increased, and the silicon nanocrystalline structure can be produced easily and inexpensively.

摘要翻译： 在等离子体处理室中将衬底设定在预定温度，然后等离子体处理室的内部被调节至少包含氢化硅气体和氢气的减压，施加高频电场以形成 在衬底上由精细硅晶体和非晶硅组成的纳米级厚度的硅膜。 此后，终止施加高频电场，然后用氧化或氮化气体代替等离子体处理室的内部，再次施加高频电场进行等离子体氧化处理或等离子体氮化处理 硅膜形成在基板上。 因此，可以通过使用具有实现高发光效率的硅集成电路的制造工艺，在其表面上用氧气或氮气可靠地终止在硅衬底上形成硅纳米晶体结构。 根据本发明的方法，氧或氮封端的硅纳米晶体的粒径可以以1〜2nm的精度进行调节，每单位面积的密度可以增加，并且硅纳米晶体结构可以 可以轻松，低成本地生产。

公开(公告)号：US5491108A

公开(公告)日：1996-02-13

申请号：US164580

申请日：1993-12-10

申请人： Mieko Suzuki ,  Tetsuya Homma ,  Yukinobu Murao ,  Takaho Tanigawa ,  Hiroki Koga

发明人： Mieko Suzuki ,  Tetsuya Homma ,  Yukinobu Murao ,  Takaho Tanigawa ,  Hiroki Koga

IPC分类号： H01L21/3205 ,  H01L21/316 ,  H01L21/768 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  H01L21/44

CPC分类号： H01L21/76801 ,  H01L21/76819 ,  H01L21/76832

摘要： A method which can markedly improve the flatness of a semiconductor integrated circuit device by forming selectively a layer insulating film on an underlying substrate having level differences is disclosed. First, a Ti--W alloy film is formed on a member which brings about level differences due to wirings or the like, then a PECVD silicon oxide film is formed followed by a plasma treatment using CF.sub.4 gas. Further, a silicon oxide film is deposited by atmospheric pressure CVD using ozone and tetraethoxysilane. Then, the surface is flattened by etchback using an organic SOG film, and a silicon oxide film is formed by plasma excited CVD.

摘要翻译： 公开了一种能够通过在具有电平差的下层衬底上选择性地形成层间绝缘膜来显着提高半导体集成电路器件的平坦度的方法。 首先，在由于布线等引起的电位差的构件上形成Ti-W合金膜，然后形成PECVD氧化硅膜，然后使用CF 4气体进行等离子体处理。 此外，通过使用臭氧和四乙氧基硅烷的大气压CVD沉积氧化硅膜。 然后，通过使用有机SOG膜的回蚀使表面平坦化，并且通过等离子体激发CVD形成氧化硅膜。

公开(公告)号：US07589002B2

公开(公告)日：2009-09-15

申请号：US12152944

申请日：2008-05-19

申请人： Yoichiro Numasawa ,  Yukinobu Murao

发明人： Yoichiro Numasawa ,  Yukinobu Murao

IPC分类号： H01L21/36 ,  H01L21/20

CPC分类号： C23C16/24 ,  C23C16/56 ,  Y10S977/814

摘要： An oxygen- or nitrogen-terminated silicon nanocrystalline structure is formed on a silicon substrate by forming a silicon film of fine silicon crystals and amorphous silicon on a substrate, and oxidizing or nitriding the formed silicon film with ions and radicals formed from an oxidizing gas or a nitriding gas. The oxidizing or nitriding step comprises substeps of disposing the substrate provided with the silicon film in an oxidizing or nitriding gas atmosphere within a plasma treatment chamber, and then plasma-oxiziding or plasma-nitriding the substrate provided with the silicon film by applying a high frequency electric field to the oxidizing or nitriding gas atmosphere. The method allows the particle diameter of the oxygen- or nitrogen-terminated silicon nanocrystals to be regulated to an accuracy of 1 to 2 nm, the density thereof per unit area to be increased, and the silicon nanocrystalline structure to be produced easily and inexpensively.

摘要翻译： 在硅衬底上形成氧或氮封端的硅纳米晶体结构，通过在衬底上形成精细的硅晶体和非晶硅的硅膜，以及用氧化气体形成的离子和自由基对形成的硅膜进行氧化或氮化， 氮化气体。 氧化或氮化步骤包括将设置有硅膜的基板设置在等离子体处理室内的氧化或氮化气体气氛中的子步骤，然后通过施加高频率等离子体氧化或等离子体处理设置有硅膜的基板 电场对氧化或氮化气体的气氛。 该方法允许将氧或氮封端的硅纳米晶体的粒径调节至1〜2nm的精度，其每单位面积的密度增加，并且容易且廉价地制造硅纳米晶体结构。

公开(公告)号：US20080296579A1

公开(公告)日：2008-12-04

申请号：US12128465

申请日：2008-05-28

申请人： YUKINOBU MURAO ,  AKIRA KUMAGAI ,  YOICHIRO NUMASAWA

发明人： YUKINOBU MURAO ,  AKIRA KUMAGAI ,  YOICHIRO NUMASAWA

IPC分类号： H01L29/04 ,  H01L21/205

CPC分类号： H01L27/1203 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/28035 ,  H01L21/84 ,  H01L29/04 ,  H01L29/4925 ,  H01L29/66666 ,  H01L29/7827 ,  Y10S977/89 ,  Y10S977/936

摘要： This invention provides a substrate structure capable of controlling the threshold voltage of a MOS transistor independently of the substrate concentration and easily suppressing a short channel effect caused by reducing the channel length. A first nanosilicon film formed from nanosilicon grains having the same grain size is formed on a silicon oxide film on the surface of a silicon substrate. A silicon nitride film is formed on the first nanosilicon film. Then, a second nanosilicon film having an average grain size different from that of the first nanosilicon film is formed. A semiconductor circuit device is formed on a thus manufactured nanosilicon semiconductor substrate.

摘要翻译： 本发明提供了一种能够独立于衬底浓度来控制MOS晶体管的阈值电压的衬底结构，并且容易抑制由通道长度减小引起的短沟道效应。 在硅衬底的表面的氧化硅膜上形成由具有相同粒径的纳米硅粒子形成的第一纳米硅膜。 在第一纳米硅膜上形成氮化硅膜。 然后，形成平均粒径与第一纳米硅膜不同的第二纳米硅膜。 在这样制造的纳米硅半导体衬底上形成半导体电路器件。

公开(公告)号：US20070262307A1

公开(公告)日：2007-11-15

申请号：US11826476

申请日：2007-07-16

申请人： Yoichiro Numasawa ,  Yukinobu Murao

发明人： Yoichiro Numasawa ,  Yukinobu Murao

IPC分类号： H01L21/20 ,  H01L31/00

CPC分类号： C23C16/24 ,  C23C16/56 ,  Y10S977/814

摘要： A substrate is set at a predetermined temperature in a plasma treatment chamber, then the inside of the plasma treatment chamber is regulated at a reduced pressure containing at least a silicon hydride gas and a hydrogen gas, a high-frequency electric field is applied to form a silicon film of nanometer scale thickness composed of fine silicon crystals and amorphous silicon on the substrate. Thereafter, application of the high-frequency electric field is terminated, then the inside of the plasma treatment chamber is replaced by an oxidizing or nitriding gas, and a high-frequency electric field is applied again for plasma oxidizing treatment or plasma nitriding treatment of the silicon film formed on the substrate. Thereby, a silicon nanocrystalline structure can be formed on a silicon substrate by using a process of producing silicon integrated circuits with achieving high luminous efficiency, and terminating reliably with oxygen or nitrogen on the surface thereof. According to the method of the present invention, the particle diameter of the oxygen- or nitrogen-terminated silicon nanocrystals can be regulated in an accuracy of 1 to 2 nm, the density thereof per unit area can be increased, and the silicon nanocrystalline structure can be produced easily and inexpensively.

摘要翻译： 在等离子体处理室中将衬底设定在预定温度，然后等离子体处理室的内部被调节至少包含氢化硅气体和氢气的减压，施加高频电场以形成 在衬底上由精细硅晶体和非晶硅组成的纳米级厚度的硅膜。 此后，终止施加高频电场，然后用氧化或氮化气体代替等离子体处理室的内部，再次施加高频电场进行等离子体氧化处理或等离子体氮化处理 硅膜形成在基板上。 因此，可以通过使用具有实现高发光效率的硅集成电路的制造工艺，在其表面上用氧气或氮气可靠地终止在硅衬底上形成硅纳米晶体结构。 根据本发明的方法，氧或氮封端的硅纳米晶体的粒径可以以1〜2nm的精度进行调节，每单位面积的密度可以增加，并且硅纳米晶体结构可以 可以轻松，低成本地生产。

公开(公告)号：US5518962A

公开(公告)日：1996-05-21

申请号：US411390

申请日：1995-03-28

申请人： Yukinobu Murao

发明人： Yukinobu Murao

IPC分类号： H01L21/3105 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L21/283

CPC分类号： H01L21/02164 ,  H01L21/02129 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/3105 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/76802

摘要： A semiconductor device formed at a substrate surface region is coated with a non-doped CVD silicon oxide film, and an interlayer insulating film composed of a BPSG film, a first ozone-TEOS NSG film and a second ozone-TEOS NSG film is formed on the silicon oxide film. The BPSG film has a thickness of not less than 50 nm but not greater than 200 nm, and is heat-treated at a temperature of not lower than 700.degree. C. but not higher than 800.degree. C. In addition, the first and second zone-TEOS NSG films are also heat-treated at a temperature of not lower than 700.degree. C. but not higher than 800.degree. C.

摘要翻译： 形成在基板表面区域的半导体器件涂覆有未掺杂的CVD氧化硅膜，并且在BPSG膜，第一臭氧-TEOS NSG膜和第二臭氧-TEOS NSG膜上构成的层间绝缘膜形成在 氧化硅膜。 BPSG膜的厚度不小于50nm但不大于200nm，并且在不低于700℃但不高于800℃的温度下进行热处理。此外，第一和第二 zone-TEOS NSG膜也在不低于700℃但不高于800℃的温度下进行热处理。

公开(公告)号：US06281536B1

公开(公告)日：2001-08-28

申请号：US09287413

申请日：1999-04-07

申请人： Sota Shinohara ,  Kazushi Amanuma ,  Yukinobu Murao ,  Yuukoh Katoh ,  Tsuneo Takeuchi ,  Yoshihiro Hayashi

发明人： Sota Shinohara ,  Kazushi Amanuma ,  Yukinobu Murao ,  Yuukoh Katoh ,  Tsuneo Takeuchi ,  Yoshihiro Hayashi

IPC分类号： H01L2972

CPC分类号： H01L27/11502 ,  H01L28/55

摘要： A ferroelectric memory device includes a ferroelectric capacitance element formed through an insulating film on a semiconductor substrate. The ferroelectric capacitance element includes a lower electrode, a ferroelectric film formed on the lower electrode, and an upper electrode formed on the ferroelectric film. The upper electrode has a laminate structure which contains a conductive oxide layer of first metal which is connected with the ferroelectric film.

摘要翻译： 铁电存储器件包括通过半导体衬底上的绝缘膜形成的铁电电容元件。 铁电电容元件包括下电极，形成在下电极上的铁电膜和形成在铁电体膜上的上电极。 上部电极具有包含与铁电体膜连接的第一金属的导电性氧化物层的层叠结构。

公开(公告)号：US07666763B2

公开(公告)日：2010-02-23

申请号：US12128465

申请日：2008-05-28

申请人： Yukinobu Murao ,  Akira Kumagai ,  Yoichiro Numasawa

发明人： Yukinobu Murao ,  Akira Kumagai ,  Yoichiro Numasawa

IPC分类号： H01L21/20

CPC分类号： H01L27/1203 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/28035 ,  H01L21/84 ,  H01L29/04 ,  H01L29/4925 ,  H01L29/66666 ,  H01L29/7827 ,  Y10S977/89 ,  Y10S977/936

摘要： This invention provides a substrate structure capable of controlling the threshold voltage of a MOS transistor independently of the substrate concentration and easily suppressing a short channel effect caused by reducing the channel length. A first nanosilicon film formed from nanosilicon grains having the same grain size is formed on a silicon oxide film on the surface of a silicon substrate. A silicon nitride film is formed on the first nanosilicon film. Then, a second nanosilicon film having an average grain size different from that of the first nanosilicon film is formed. A semiconductor circuit device is formed on a thus manufactured nanosilicon semiconductor substrate.

摘要翻译： 本发明提供了一种能够独立于衬底浓度来控制MOS晶体管的阈值电压的衬底结构，并且容易抑制由通道长度减小引起的短沟道效应。 在硅衬底的表面的氧化硅膜上形成由具有相同粒径的纳米硅粒子形成的第一纳米硅膜。 在第一纳米硅膜上形成氮化硅膜。 然后，形成平均粒径与第一纳米硅膜不同的第二纳米硅膜。 在这样制造的纳米硅半导体衬底上形成半导体电路器件。

公开(公告)号：US20080230781A1

公开(公告)日：2008-09-25

申请号：US12152944

申请日：2008-05-19

申请人： Yoichiro Numasawa ,  Yukinobu Murao

发明人： Yoichiro Numasawa ,  Yukinobu Murao

IPC分类号： H01L21/20 ,  H01L49/02

CPC分类号： C23C16/24 ,  C23C16/56 ,  Y10S977/814

摘要： A substrate is set at a predetermined temperature in a plasma treatment chamber, then the inside of the plasma treatment chamber is regulated at a reduced pressure containing at least a silicon hydride gas and a hydrogen gas, a high-frequency electric field is applied to form a silicon film of nanometer scale thickness composed of fine silicon crystals and amorphous silicon on the substrate. Thereafter, application of the high-frequency electric field is terminated, then the inside of the plasma treatment chamber is replaced by an oxidizing or nitriding gas, and a high-frequency electric field is applied again for plasma oxidizing treatment or plasma nitriding treatment of the silicon film formed on the substrate.Thereby, a silicon nanocrystalline structure can be formed on a silicon substrate by using a process of producing silicon integrated circuits with achieving high luminous efficiency, and terminating reliably with oxygen or nitrogen on the surface thereof. According to the method of the present invention, the particle diameter of the oxygen- or nitrogen-terminated silicon nanocrystals can be regulated in an accuracy of 1 to 2 nm, the density thereof per unit area can be increased, and the silicon nanocrystalline structure can be produced easily and inexpensively.

摘要翻译： 在等离子体处理室中将衬底设定在预定温度，然后等离子体处理室的内部被调节至少包含氢化硅气体和氢气的减压，施加高频电场以形成 在衬底上由精细硅晶体和非晶硅组成的纳米级厚度的硅膜。 此后，终止施加高频电场，然后用氧化或氮化气体代替等离子体处理室的内部，再次施加高频电场进行等离子体氧化处理或等离子体氮化处理 硅膜形成在基板上。 因此，可以通过使用具有实现高发光效率的硅集成电路的制造工艺，在其表面上用氧气或氮气可靠地终止在硅衬底上形成硅纳米晶体结构。 根据本发明的方法，氧或氮封端的硅纳米晶体的粒径可以以1〜2nm的精度进行调节，每单位面积的密度可以增加，并且硅纳米晶体结构可以 可以轻松，低成本地生产。