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公开(公告)号:US20240324248A1
公开(公告)日:2024-09-26
申请号:US18474179
申请日:2023-09-25
Applicant: Advanced Micro Devices, Inc. , ATI Technologies ULC
Inventor: John Wuu , Kevin Gillespie , Samuel Naffziger , Spence Oliver , Rajit Seahra , Regina T. Schmidt , Raja Swaminathan , Omar Zia
IPC: H10B80/00 , H01L23/544 , H01L25/00 , H01L25/18
CPC classification number: H10B80/00 , H01L23/544 , H01L25/18 , H01L25/50 , H01L23/481 , H01L23/5286 , H01L24/06 , H01L24/08 , H01L2223/54433 , H01L2224/06181 , H01L2224/08145
Abstract: A method for die pair partitioning can include providing a circuit die. The method can additionally include providing one or more additional circuit die having one or more fuses positioned therein, wherein the one or more fuses identify the circuit die. The method can also include connecting the one or more additional circuit die to the circuit die. Various other methods, systems, and computer-readable media are also disclosed.
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公开(公告)号:US11830817B2
公开(公告)日:2023-11-28
申请号:US17085215
申请日:2020-10-30
Applicant: ADVANCED MICRO DEVICES, INC. , ATI TECHNOLOGIES ULC
Inventor: Rahul Agarwal , Raja Swaminathan , Michael S. Alfano , Gabriel H. Loh , Alan D. Smith , Gabriel Wong , Michael Mantor
IPC: H01L23/538 , H01L25/065 , H01L21/50 , H01L27/06
CPC classification number: H01L23/5384 , H01L21/50 , H01L23/5381 , H01L23/5385 , H01L25/0657 , H01L27/0688
Abstract: A semiconductor package includes a first die, a second die, and an interconnect die coupled to a first plurality of through-die vias in the first die and a second plurality of through-die vias in the second die. The interconnect die provides communications pathways the first die and the second die.
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公开(公告)号:US20230197619A1
公开(公告)日:2023-06-22
申请号:US17556346
申请日:2021-12-20
Applicant: ADVANCED MICRO DEVICES, INC.
Inventor: Gabriel H LOH , Raja Swaminathan , Rahul Agarwal , Brett P. Wilkerson
IPC: H01L23/538 , G05F1/575 , H01L25/065 , H01L27/06
CPC classification number: H01L23/5384 , G05F1/575 , H01L23/5385 , H01L23/5386 , H01L25/0657 , H01L27/0688
Abstract: A semiconductor package includes a package substrate having a first surface and an opposing second surface, and further includes an integrated circuit (IC) die disposed at the second surface and having a third surface facing the second surface and an opposing fourth surface. The IC die has a first region comprising one or more metal layers and circuit components for one or more functions of the IC die and a second region offset from the first region in a direction parallel with the third and fourth surfaces. The semiconductor package further includes a voltage regulator disposed at the fourth surface in the second region and having an input configured to receive a supply voltage and an output configured to provide a regulated voltage, and also includes a conductive path coupling the output of the voltage regulator to a voltage input of circuitry of the IC die.
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公开(公告)号:US12165981B2
公开(公告)日:2024-12-10
申请号:US17556346
申请日:2021-12-20
Applicant: ADVANCED MICRO DEVICES, INC.
Inventor: Gabriel H Loh , Raja Swaminathan , Rahul Agarwal , Brett P. Wilkerson
IPC: H01L23/538 , G05F1/575 , H01L25/065 , H01L27/06
Abstract: A semiconductor package includes a package substrate having a first surface and an opposing second surface, and further includes an integrated circuit (IC) die disposed at the second surface and having a third surface facing the second surface and an opposing fourth surface. The IC die has a first region comprising one or more metal layers and circuit components for one or more functions of the IC die and a second region offset from the first region in a direction parallel with the third and fourth surfaces. The semiconductor package further includes a voltage regulator disposed at the fourth surface in the second region and having an input configured to receive a supply voltage and an output configured to provide a regulated voltage, and also includes a conductive path coupling the output of the voltage regulator to a voltage input of circuitry of the IC die.
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公开(公告)号:US20240321702A1
公开(公告)日:2024-09-26
申请号:US18474166
申请日:2023-09-25
Applicant: Advanced Micro Devices, Inc. , Xilinx, Inc.
Inventor: Yan Wang , Kevin Gillespie , Samuel Naffziger , Richard Schultz , Raja Swaminathan , Omar Zia , John Wuu
IPC: H01L23/498 , H01L23/00 , H01L23/367 , H01L25/065
CPC classification number: H01L23/49822 , H01L23/3675 , H01L23/49816 , H01L24/05 , H01L24/32 , H01L25/0652 , H01L2224/05009 , H01L2224/05025 , H01L2224/32146 , H01L2224/32165 , H01L2924/1431 , H01L2924/1437 , H01L2924/351
Abstract: A method for providing backside power can include providing a first circuit die having a first metal stack. The method can also include connecting a second metal stack of a second circuit die to the first metal stack of the first circuit die, wherein a backside power delivery network is located in a passivation layer of at least one of the first circuit die or the second circuit die. Various other methods, systems, and computer-readable media are also disclosed.
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公开(公告)号:US20240047228A1
公开(公告)日:2024-02-08
申请号:US17816944
申请日:2022-08-02
Applicant: Advanced Micro Devices, Inc.
Inventor: Sri Ranga Sai Boyapati , Deepak Vasant Kulkarni , Raja Swaminathan , Brett P. Wilkerson , Arsalan Alam
IPC: H01L21/48 , H01L23/64 , H01L23/498
CPC classification number: H01L21/486 , H01L21/4857 , H01L23/642 , H01L23/49822 , H01L23/49838 , H01L23/49894
Abstract: A disclosed method can include (i) positioning a first surface of a component of a semiconductor device on a first plated through-hole, (ii) covering, with a layer of dielectric material, at least a second surface of the component that is opposite the first surface of the component, (iii) removing a portion of the layer of dielectric material covering the second surface of the component to form at least one cavity, and (iv) depositing conductive material in the cavity to form a second plated through-hole on the second surface of the component. Various other apparatuses, systems, and methods are also disclosed.
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公开(公告)号:US11709327B2
公开(公告)日:2023-07-25
申请号:US17361033
申请日:2021-06-28
Applicant: ADVANCED MICRO DEVICES, INC.
Inventor: Brett P. Wilkerson , Raja Swaminathan , Kong Toon Ng , Rahul Agarwal
CPC classification number: G02B6/4274 , G02B6/425 , G02B6/4255 , G02B6/43
Abstract: A semiconductor package includes a first mold layer at least partially encasing at least one photonic integrated circuit. A redistribution layer structure is fabricated on the first mold layer, the redistribution layer structure including dielectric material and conductive structures. A second mold layer at least partially encasing at least one semiconductor chip is fabricated on the redistribution layer structure. The redistribution layer structure provides electrical pathways between the at least one semiconductor chip and the at least one photonic integrated circuit. One or more voids are defined in the second mold layer in an area above an optical interface of the at least one photonic integrated circuit such that light is transmittable through dielectric material above the optical interface.
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公开(公告)号:US20230207544A1
公开(公告)日:2023-06-29
申请号:US17560691
申请日:2021-12-23
Applicant: Advanced Micro Devices, Inc.
Inventor: Gabriel H. Loh , Rahul Agarwal , Raja Swaminathan , Brett P. Wilkerson
IPC: H01L25/18 , H01L23/00 , H01L25/00 , H01L21/768
CPC classification number: H01L25/18 , H01L24/16 , H01L25/50 , H01L21/76898 , H01L2224/16145 , H01L2224/16225
Abstract: A semiconductor device includes one or more active devices disposed between a processor die and a package substrate. The semiconductor device includes a first layer with a processor die, a second layer with one or more active devices, and a third layer with a package substrate, where the second layer is disposed between the first and third layers. The one or more active devices are semiconductor-based devices, such as voltage regulators, that participate in supplying power to the processor die and are electrically connected to the processor die using various connection configurations. The implementations use short path lengths for improved performance with a compact structure that avoids the use of edge wiring or interposers without occupying processor die space. Implementations include the use of through-silicon vias (TSVs) to provide short path lengths while reducing the number of connection resources used by the one or more power components.
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公开(公告)号:US20240321827A1
公开(公告)日:2024-09-26
申请号:US18474158
申请日:2023-09-25
Applicant: Advanced Micro Devices, Inc. , Xilinx, Inc.
Inventor: Omar Zia , Thomas D Burd , Kevin Gillespie , Samuel Naffziger , Richard Schultz , Raja Swaminathan , Srividhya Venkataraman , Yan Wang , John Wuu
IPC: H01L25/065 , H01L23/00 , H01L23/36 , H01L23/48 , H10B80/00
CPC classification number: H01L25/0657 , H01L23/36 , H01L23/481 , H01L24/08 , H01L24/16 , H01L24/80 , H10B80/00 , H01L2224/08145 , H01L2224/16145 , H01L2224/80895 , H01L2224/80896
Abstract: A method for circuit die stacking can include providing a first circuit die having a first metal stack, wherein the first circuit die corresponds to a primary thermal source of an integrated circuit including the first circuit die. The method can additionally include providing a second circuit die of the integrated circuit, wherein the second circuit die has a second metal stack and is configured for connection to at least one of a package substrate or an additional die. The method can also include connecting the first metal stack to the second metal stack. Various other methods, systems, and computer-readable media are also disclosed.
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公开(公告)号:US20240321668A1
公开(公告)日:2024-09-26
申请号:US18474138
申请日:2023-09-25
Applicant: Advanced Micro Devices, Inc. , Xilinx, Inc.
Inventor: Thomas D. Burd , Gabriel H. Loh , John Wuu , Kevin Gillespie , Raja Swaminathan , Richard Schultz , Samuel Naffziger , Srividhya Venkataraman , Yan Wang
IPC: H01L23/34 , H01L23/00 , H01L25/065 , H10B80/00
CPC classification number: H01L23/34 , H01L24/08 , H01L24/16 , H01L24/32 , H01L24/80 , H01L25/0652 , H10B80/00 , H01L2224/08145 , H01L2224/16225 , H01L2224/32221 , H01L2224/80895 , H01L2224/80896 , H01L2924/1437
Abstract: A method for die pair partitioning can include providing a first circuit die having a first metal stack. The method can additionally include positioning a second circuit die having a second metal stack in a manner that places a temperature sensor in a transistor layer of the second circuit die in planar proximity to at least one hot spot located in an additional transistor layer of the first circuit die. The method can also include connecting the first metal stack of the first circuit die to the second metal stack of the second circuit die. Various other methods, systems, and computer-readable media are also disclosed.
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