Abstract:
A method for providing backside power can include providing a first circuit die having a first metal stack. The method can also include connecting a second metal stack of a second circuit die to the first metal stack of the first circuit die, wherein a backside power delivery network is located in a passivation layer of at least one of the first circuit die or the second circuit die. Various other methods, systems, and computer-readable media are also disclosed.
Abstract:
A method for circuit die stacking can include providing a first circuit die having a first metal stack, wherein the first circuit die corresponds to a primary thermal source of an integrated circuit including the first circuit die. The method can additionally include providing a second circuit die of the integrated circuit, wherein the second circuit die has a second metal stack and is configured for connection to at least one of a package substrate or an additional die. The method can also include connecting the first metal stack to the second metal stack. Various other methods, systems, and computer-readable media are also disclosed.
Abstract:
A method for die pair partitioning can include providing a first circuit die having a first metal stack. The method can additionally include positioning a second circuit die having a second metal stack in a manner that places a temperature sensor in a transistor layer of the second circuit die in planar proximity to at least one hot spot located in an additional transistor layer of the first circuit die. The method can also include connecting the first metal stack of the first circuit die to the second metal stack of the second circuit die. Various other methods, systems, and computer-readable media are also disclosed.
Abstract:
Various semiconductor chip devices with stacked chips are disclosed. In one aspect, a semiconductor chip device is provided. The semiconductor chip device includes a first semiconductor chip that has a floor plan with a high heat producing area and a low heat producing area. At least one second semiconductor chip is stacked on the low heat producing area. The semiconductor chip device also includes means for transferring heat from the high heat producing area.
Abstract:
In one form, a clock doubler includes a switched inverter, an exclusive logic circuit, and a control signal generation circuit. The switched inverter has first and second control inputs for respectively receiving first and second control signals, a signal input for receiving a clock input signal, and an output. The exclusive logic circuit has a first input for receiving the clock input signal, a second input coupled to the output of the switched inverter, and an output for providing a clock output signal. A control signal generation circuit provides the first and second control signals in response to the clock output signal. The clock doubler may be used in a clock distribution circuit for an integrated circuit that also includes a phase locked loop for providing the input clock signals, and a plurality of clock sub-domains each having one of the clock doublers.
Abstract:
In one form, a clock doubler includes a switched inverter, an exclusive logic circuit, and a control signal generation circuit. The switched inverter has first and second control inputs for respectively receiving first and second control signals, a signal input for receiving a clock input signal, and an output. The exclusive logic circuit has a first input for receiving the clock input signal, a second input coupled to the output of the switched inverter, and an output for providing a clock output signal. A control signal generation circuit provides the first and second control signals in response to the clock output signal. The clock doubler may be used in a clock distribution circuit for an integrated circuit that also includes a phase locked loop for providing the input clock signals, and a plurality of clock sub-domains each having one of the clock doublers.
Abstract:
Refreshing displays using on-die cache, including: determining that a static display condition has been met; storing, in cache memory of a processor, first display data; and displaying the first display data from the cache memory.
Abstract:
A method for controlling a data processing system includes detecting a droop in a power supply voltage of a functional circuit of the data processing system greater than a programmable droop threshold. An operation of the data processing system is throttled according to a programmable step size, a programmable assertion time, and a programmable de-assertion time in response to detecting the droop.
Abstract:
The low end operating voltage of an integrated circuit is adjusted. Oscillations are counted at a ring oscillator on the integrated circuit over a designated period of clock cycles. Based on the number of oscillations, a prediction model associated with a first set of device degradation data and a second set of static random-access memory (SRAM) low end operating voltage data is used to select a low end operating voltage limit for a processor on the integrated circuit. The low end operating voltage of the processor is set based on the selected low end operating voltage limit. These steps are repeated multiple times during operation of the processor. A method of testing integrated circuits to provide the data employed to produce the prediction model is also provided.
Abstract:
A processing system includes a compute die and a stacked memory stacked with the compute die. The stacked memory includes a first memory die and a second memory die stacked on top of the first memory die. A parallel access using a single memory address is directed towards different memory banks of the first memory die and the second memory die. The single memory address of the parallel access is swizzled to access the first memory die and the second memory die at different physical locations.