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    Method for Forming Si-Containing Film Using Two Precursors by ALD
    1.
    发明申请
    Method for Forming Si-Containing Film Using Two Precursors by ALD 有权
    使用ALD的两种前体形成含Si膜的方法

    公开(公告)号：US20130244446A1

    公开(公告)日：2013-09-19

    申请号：US13799708

    申请日：2013-03-13

    Applicant: ASM IP HOLDING B.V.

    Inventor： Naoto Tsuji ,  Atsuki Fukazawa ,  Noboru Takamure ,  Suvi Haukka ,  Antti Juhani Niskanen ,  Hyung Sang Park

    IPC: H01L21/02

    CPC classification number: H01L21/0228 ,  C23C16/325 ,  C23C16/345 ,  C23C16/45534 ,  C23C16/4554 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/76829

    Abstract: A method for forming a silicon-containing dielectric film on a substrate by atomic layer deposition (ALD) includes: providing two precursors, one precursor containing a halogen in its molecule, another precursor containing a silicon but no halogen in its molecule, adsorbing a first precursor, which is one of the two precursors onto a substrate to deposit a monolayer of the first precursor; adsorbing a second precursor, which is the other of the two precursors onto the monolayer of the first precursor to deposit a monolayer of the second precursor; and exposing the monolayer of the second precursor to radicals of a reactant to cause surface reaction with the radicals to form a compound monolayer of a silicon-containing film.

    Abstract translation: 通过原子层沉积（ALD）在衬底上形成含硅电介质膜的方法包括：提供两个前体，在其分子中含有卤素的一种前体，在其分子中含有硅但不含卤素的另一种前体，吸附第一 前体，其是沉积单层第一前体的底物上的两种前体之一; 将作为所述两种前体中的另一种的第二前体吸附到所述第一前体的单层上以沉积所述第二前体的单层; 并将第二前体的单层暴露于反应物的自由基以引起与自由基的表面反应以形成含硅膜的化合物单层。

    Method for Forming Ti-Containing Film by PEALD using TDMAT or TDEAT
    2.
    发明申请
    Method for Forming Ti-Containing Film by PEALD using TDMAT or TDEAT 有权
    使用TDMAT或TDEAT通过PEALD形成含钛膜的方法

    公开(公告)号：US20150099072A1

    公开(公告)日：2015-04-09

    申请号：US14050150

    申请日：2013-10-09

    Applicant: ASM IP Holding B.V.

    Inventor： Noboru Takamure ,  Tatsuhiro Okabe

    IPC: C23C16/517 ,  C23C16/40 ,  C23C16/30 ,  C23C16/34 ,  C23C16/36

    CPC classification number: C23C16/405 ,  C23C16/308 ,  C23C16/34 ,  C23C16/36 ,  C23C16/4554 ,  C23C16/45553 ,  C23C16/52

    Abstract: A method for forming a Ti-containing film on a substrate by plasma-enhanced atomic layer deposition (PEALD) using tetrakis(dimethylamino)titanium (TDMAT) or tetrakis(diethylamino)titanium (TDEAT), includes: introducing TDMAT and/or TDEAT in a pulse to a reaction space where a substrate is placed; continuously introducing a NH3-free reactant gas to the reaction space; applying RF power in a pulse to the reaction space wherein the pulse of TDMAT and/or TDEAT and the pulse of RF power do not overlap; and repeating the above steps to deposit a Ti-containing film on the substrate.

    Abstract translation: 通过使用四（二甲基氨基）钛（TDMAT）或四（二乙氨基）钛（TDEAT））的等离子体增强原子层沉积（PEALD）在衬底上形成含Ti膜的方法包括：将TDMAT和/或TDEAT引入 向放置基板的反应空间的脉冲; 连续向反应空间引入不含NH 3的反应气体; 将RF功率脉冲施加到反应空间，其中TDMAT和/或TDEAT的脉冲和RF功率的脉冲不重叠; 并重复上述步骤以在基板上沉积含Ti的膜。

    Method for forming dielectric film in trenches by PEALD using H-containing gas
    3.
    发明授权
    Method for forming dielectric film in trenches by PEALD using H-containing gas 有权
    使用含H气体的PEALD在沟槽中形成电介质膜的方法

    公开(公告)号：US09455138B1

    公开(公告)日：2016-09-27

    申请号：US14937053

    申请日：2015-11-10

    Applicant: ASM IP Holding B.V.

    Inventor： Atsuki Fukazawa ,  Hideaki Fukuda ,  Noboru Takamure ,  Masaru Zaitsu

    IPC: H01L21/311 ,  H01L21/02

    CPC classification number: H01L21/0228 ,  H01L21/02123 ,  H01L21/02211 ,  H01L21/02274

    Abstract: A method for forming a dielectric film in a trench on a substrate by plasma-enhanced atomic layer deposition (PEALD) performs one or more process cycles, each process cycle including: (i) feeding a silicon-containing precursor in a pulse; (ii) supplying a hydrogen-containing reactant gas at a flow rate of more than about 30 sccm but less than about 800 sccm in the absence of nitrogen-containing gas; (iii) supplying a noble gas to the reaction space; and (iv) applying RF power in the presence of the reactant gas and the noble gas and in the absence of any precursor in the reaction space, to form a monolayer constituting a dielectric film on a substrate at a growth rate of less than one atomic layer thickness per cycle.

    Abstract translation: 通过等离子体增强原子层沉积（PEALD）在衬底上的沟槽中形成电介质膜的方法执行一个或多个工艺循环，每个工艺循环包括：（i）以脉冲方式供给含硅前体; （ii）在不存在含氮气体的情况下以大于约30sccm但小于约800sccm的流量供应含氢反应气体; （iii）向反应空间供应惰性气体; 和（iv）在反应气体和惰性气体的存在下，在反应空间中不存在任何前体的情况下施加RF功率，以在小于一个原子的生长速率下在衬底上形成构成电介质膜的单层 每个周期的层厚度。

    Method for forming Ti-containing film by PEALD using TDMAT or TDEAT
    5.
    发明授权
    Method for forming Ti-containing film by PEALD using TDMAT or TDEAT 有权
    使用TDMAT或TDEAT通过PEALD形成含Ti薄膜的方法

    公开(公告)号：US09556516B2

    公开(公告)日：2017-01-31

    申请号：US14050150

    申请日：2013-10-09

    Applicant: ASM IP Holding B.V.

    Inventor： Noboru Takamure ,  Tatsuhiro Okabe

    IPC: C23C16/44 ,  C23C16/40 ,  C23C16/34 ,  C23C16/36 ,  C23C16/30 ,  C23C16/455 ,  C23C16/52

    CPC classification number: C23C16/405 ,  C23C16/308 ,  C23C16/34 ,  C23C16/36 ,  C23C16/4554 ,  C23C16/45553 ,  C23C16/52

    Abstract: A method for forming a Ti-containing film on a substrate by plasma-enhanced atomic layer deposition (PEALD) using tetrakis(dimethylamino)titanium (TDMAT) or tetrakis(diethylamino)titanium (TDEAT), includes: introducing TDMAT and/or TDEAT in a pulse to a reaction space where a substrate is placed; continuously introducing a NH3-free reactant gas to the reaction space; applying RF power in a pulse to the reaction space wherein the pulse of TDMAT and/or TDEAT and the pulse of RF power do not overlap; and repeating the above steps to deposit a Ti-containing film on the substrate.

    Abstract translation: 通过使用四（二甲基氨基）钛（TDMAT）或四（二乙氨基）钛（TDEAT））的等离子体增强原子层沉积（PEALD）在衬底上形成含Ti膜的方法包括：将TDMAT和/或TDEAT引入 向放置基板的反应空间的脉冲; 连续向反应空间引入不含NH 3的反应气体; 将RF功率脉冲施加到反应空间，其中TDMAT和/或TDEAT的脉冲和RF功率的脉冲不重叠; 并重复上述步骤以在基板上沉积含Ti的膜。

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