Abstract:
An optical inspection apparatus, including: an optical metrology tool configured to measure structures, the optical metrology tool including: an electromagnetic (EM) radiation source configured to direct a beam of EM radiation along an EM radiation path; and an adaptive optical system disposed in a portion of the EM radiation path and configured to adjust a shape of a wave front of the beam of EM radiation, the adaptive optical system including: a first aspherical optical element; a second aspherical optical element adjacent the first aspherical optical element; and an actuator configured to cause relative movement between the first optical element and the second optical element in a direction different from a beam axis of the portion of the EM radiation path.
Abstract:
A beam homogenizer for homogenizing a beam of radiation and an illumination system and metrology apparatus comprising such a beam homogenizer as provided. The beam homogenizer comprises a filter system having a controllable radial absorption profile and configured to output a filtered beam and an optical mixing element configured to homogenize the filtered beam. The filter system may be configured to homogenize the angular beam profile radially and said optical mixing element may be configured to homogenize the angular beam profile azimuthally.
Abstract:
An inspection apparatus including: a substrate holder configured to hold a substrate; an aperture device; and an optical system configured to direct a first measurement beam of radiation onto the substrate, the first measurement beam having a first intensity distribution, and configured to direct a second focusing beam of radiation onto the substrate at a same time as the first measurement beam is directed on the substrate, the second focusing beam having a second intensity distribution, wherein at least part of the second intensity distribution is spatially separated from the first intensity distribution at least at the substrate and/or the aperture device.
Abstract:
A radiation receiving system for an inspection apparatus, used to perform measurements on target structures on lithographic substrates as part of a lithographic process, comprises a spectrometer with a number of inputs. The radiation receiving system comprises: a plurality of inputs, each input being arranged to provide radiation from a target structure; a first optical element operable to receive radiation from each of the plurality of inputs; a second optical element operable to receive radiation from the first optical element and to scatter the radiation; and a third optical element operable to direct the scattered radiation onto a detector. The second optical element may for example be a reflective diffraction grating that diffracts incoming radiation into an output radiation spectrum.
Abstract:
Disclosed is a method of mitigating for a process dependent stray light artifact on a measurement a structure. The method comprises obtaining a calibration scaling factor for the process dependent stray light artifact based on a reference angle resolved measurement and target angle resolved measurement, and a correction of an image with the obtained calibration scaling factor.
Abstract:
A metrology apparatus is disclosed that measures a structure formed on a substrate to determine a parameter of interest. The apparatus comprises an optical system configured to focus radiation onto the structure and direct radiation after reflection from the structure onto a detector, wherein: the optical system is configured such that the detector detects a radiation intensity resulting from interference between radiation from at least two different points in a pupil plane field distribution, wherein the interference is such that a component of the detected radiation intensity containing information about the parameter of interest is enhanced relative to one or more other components of the detected radiation intensity.
Abstract:
An inspection apparatus includes an optical system, which has a radiation beam delivery system for delivering radiation to a target, and a radiation beam collection system for collecting radiation after scattering from the target. Both the delivery system and the collection system comprise optical components that control the characteristics of the radiation and the collected radiation. By controlling the characteristics of one or both of the radiation and collected radiation, the depth of focus of the optical system may be increased.
Abstract:
Disclosed is a metrology apparatus for measuring a parameter of a lithographic process, and associated computer program and method. The metrology apparatus comprises an optical system for measuring a target on a substrate by illuminating the target with measurement radiation and detecting the measurement radiation scattered by the target; and an array of lenses. Each lens of the array is operable to focus the scattered measurement radiation onto a sensor, said array of lenses thereby forming an image on the sensor which comprises a plurality of sub-images, each sub-image being formed by a corresponding lens of the array of lenses. The resulting plenoptic image comprises image plane information from the sub-images, wavefront distortion information (from the relative positions of the sub-images) and pupil information from the relative intensities of the sub-images.
Abstract:
Described is a metrology system for determining a characteristic of interest relating to at least one structure on a substrate, and associated method. The metrology system comprises a processor being configured to computationally determine phase and amplitude information from a detected characteristic of scattered radiation having been reflected or scattered by the at least one structure as a result of illumination of said at least one structure with illumination radiation in a measurement acquisition, and use the determined phase and amplitude to determine the characteristic of interest.
Abstract:
An approach is used to estimate and correct the overlay variation as function of offset for each measurement. A target formed on a substrate includes periodic gratings. The substrate is illuminated with a circular spot on the substrate with a size larger than each grating. Radiation scattered by each grating is detected in a dark-field scatterometer to obtain measurement signals. The measurement signals are used to calculate overlay. The dependence (slope) of the overlay as a function of position in the illumination spot is determined. An estimated value of the overlay at a nominal position such as the illumination spot's center can be calculated, correcting for variation in the overlay as a function of the target's position in the illumination spot. This compensates for the effect of the position error in the wafer stage movement, and the resulting non-centered position of the target in the illumination spot.