Lithographic photoresist composition and process for its use
    7.
    发明授权
    Lithographic photoresist composition and process for its use 有权
    平版光刻胶组合物及其使用方法

    公开(公告)号:US06730452B2

    公开(公告)日:2004-05-04

    申请号:US09771261

    申请日:2001-01-26

    IPC分类号: G03F7039

    摘要: A lithographic photoresist composition is provided that can be used as a chemical amplification photoresist. In a preferred embodiment, the composition is substantially transparent to deep ultraviolet radiation, i.e., radiation of a wavelength less than 250 nm, including 157 nm, 193 nm and 248 nm radiation, and has improved sensitivity and resolution. The composition comprises a fluorinated vinylic polymer, particularly a fluorinated methacrylate, a fluorinated methacrylonitrile, or a fluorinated methacrylic acid, and a photoacid generator. The polymer may be a homopolymer or a copolymer. A process for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.

    摘要翻译: 提供可用作化学扩增光致抗蚀剂的平版光刻胶组合物。 在优选的实施方案中,组合物对深紫外辐射即波长小于250nm(包括157nm,193nm和248nm辐射)的辐射基本上是透明的,并具有改进的灵敏度和分辨率。 组合物包含氟化乙烯基聚合物,特别是氟化甲基丙烯酸酯,氟化甲基丙烯腈或氟化甲基丙烯酸,以及光酸产生剂。 聚合物可以是均聚物或共聚物。 还提供了使用该组合物在衬底上产生抗蚀剂图像的方法,即在集成电路等的制造中。