SEMICONDUCTOR DEVICE HAVING AT LEAST ONE CONTACT, AND MANUFACTURING METHOD FOR A SEMICONDUCTOR DEVICE HAVING AT LEAST ONE CONTACT
    3.
    发明申请
    SEMICONDUCTOR DEVICE HAVING AT LEAST ONE CONTACT, AND MANUFACTURING METHOD FOR A SEMICONDUCTOR DEVICE HAVING AT LEAST ONE CONTACT 有权
    具有至少一个接触件的半导体器件以及具有至少一个接触件的半导体器件的制造方法

    公开(公告)号:US20120292641A1

    公开(公告)日:2012-11-22

    申请号:US13446531

    申请日:2012-04-13

    IPC分类号: H01L29/161 H01L21/28

    摘要: A semiconductor device having a substrate, and at least one contact, situated on and/or above a surface of the substrate, having at least one layer made of a conductive material, the conductive material including at least one metal. The layer made of the conductive material is sputtered on, and has tear-off marks on at least one outer side area between an outer base area facing the surface and an outer contact area facing away from the surface. A manufacturing method for a semiconductor device having at least one contact is also described.

    摘要翻译: 一种半导体器件,其具有位于衬底表面上和/或上表面上的衬底和至少一个触点,该衬底具有至少一层由导电材料制成的层,该导电材料包括至少一种金属。 由导电材料制成的层被溅射在面向表面的外部基底区域和背离表面的外部接触区域之间的至少一个外侧区域上并具有撕裂痕迹。 还描述了具有至少一个接触的半导体器件的制造方法。

    Piezoresistive Micromechanical Sensor Component and Corresponding Measuring Method
    5.
    发明申请
    Piezoresistive Micromechanical Sensor Component and Corresponding Measuring Method 有权
    压电微机械传感器部件及相应的测量方法

    公开(公告)号:US20130098154A1

    公开(公告)日:2013-04-25

    申请号:US13635581

    申请日:2011-01-19

    IPC分类号: G01P15/09

    摘要: A piezoresistive micromechanical sensor component includes a substrate, a seismic mass, at least one piezoresistive bar, and a measuring device. The seismic mass is suspended from the substrate such that it can be deflected. The at least one piezoresistive bar is provided between the substrate and the seismic mass and is subject to a change in resistance when the seismic mass is deflected. The at least one piezoresistive bar has a lateral and/or upper and/or lower conductor track which at least partially covers the piezoresistive bar and extends into the region of the substrate. The measuring device is electrically connected to the substrate and to the conductor track and is configured to measure the change in resistance over a circuit path which runs from the substrate through the piezoresistive bar and from the piezoresistive bar through the lateral and/or upper and/or lower conductor track.

    摘要翻译: 压阻微机电传感器部件包括基板,抗震块,至少一个压阻棒和测量装置。 地震质量从基板悬挂使其能够偏转。 所述至少一个压阻棒设置在所述基底和所述抗震块之间,并且当所述地震质量被偏转时,所述至少一个压阻棒经受阻力的变化。 至少一个压阻棒具有至少部分地覆盖压阻棒并延伸到衬底的区域中的横向和/或上部和/或下部导体轨道。 测量装置电连接到基板和导体轨道,并且被配置成测量电路的电阻变化,该电阻通过基板通过压阻棒和从压阻棒通过横向和/或上部和/ 或下导体轨道。

    Piezoresistive micromechanical sensor component and corresponding measuring method
    7.
    发明授权
    Piezoresistive micromechanical sensor component and corresponding measuring method 有权
    压电微机械传感器元件及相应的测量方法

    公开(公告)号:US09110090B2

    公开(公告)日:2015-08-18

    申请号:US13635581

    申请日:2011-01-19

    IPC分类号: G01P15/12 G01P15/09 G01P15/08

    摘要: A piezoresistive micromechanical sensor component includes a substrate, a seismic mass, at least one piezoresistive bar, and a measuring device. The seismic mass is suspended from the substrate such that it can be deflected. The at least one piezoresistive bar is provided between the substrate and the seismic mass and is subject to a change in resistance when the seismic mass is deflected. The at least one piezoresistive bar has a lateral and/or upper and/or lower conductor track which at least partially covers the piezoresistive bar and extends into the region of the substrate. The measuring device is electrically connected to the substrate and to the conductor track and is configured to measure the change in resistance over a circuit path which runs from the substrate through the piezoresistive bar and from the piezoresistive bar through the lateral and/or upper and/or lower conductor track.

    摘要翻译: 压阻微机电传感器部件包括基板,抗震块,至少一个压阻棒和测量装置。 地震质量从基板悬挂使其能够偏转。 所述至少一个压阻棒设置在所述基底和所述抗震块之间,并且当所述地震质量被偏转时,所述至少一个压阻棒经受阻力的变化。 至少一个压阻棒具有至少部分地覆盖压阻棒并延伸到衬底的区域中的横向和/或上部和/或下部导体轨道。 测量装置电连接到基板和导体轨道,并且被配置成测量电路的电阻变化,该电阻通过基板通过压阻棒和从压阻棒通过横向和/或上部和/ 或下导体轨道。