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    Virtual substrates for epitaxial growth and methods of making the same
    6.
    发明授权
    Virtual substrates for epitaxial growth and methods of making the same 有权
    用于外延生长的虚拟衬底及其制造方法

    公开(公告)号：US09455146B2

    公开(公告)日：2016-09-27

    申请号：US12928762

    申请日：2010-12-17

    申请人： Harry A. Atwater ,  Marina S. Leite ,  Emily C. Warmann ,  Dennis M. Callahan

    发明人： Harry A. Atwater ,  Marina S. Leite ,  Emily C. Warmann ,  Dennis M. Callahan

    IPC分类号： H01L29/06 ,  H01L21/18

    CPC分类号： H01L21/187

    摘要： A virtual substrate includes a handle support and a strain-relieved single crystalline layer on the handle support. A method of making the virtual substrate includes growing a coherently-strained single crystalline layer on an initial growth substrate, removing the initial growth substrate to relieve the strain on the single crystalline layer, and applying the strain-relieved single crystalline layer on a handle support.

    摘要翻译： 虚拟衬底包括手柄支撑件和手柄支撑件上的应变消除的单晶层。 制造虚拟衬底的方法包括在初始生长衬底上生长相干应变的单晶层，去除初始生长衬底以减轻单晶层上的应变，并将应变消除的单晶层施加在手柄支撑件上 。

    MICROELECTRONIC STRUCTURES INCLUDING CUPROUS OXIDE SEMICONDUCTORS AND HAVING IMPROVED P-N HETEROJUNCTIONS
    8.
    发明申请
    MICROELECTRONIC STRUCTURES INCLUDING CUPROUS OXIDE SEMICONDUCTORS AND HAVING IMPROVED P-N HETEROJUNCTIONS 审中-公开
    微电子结构包括铜氧化物半导体并具有改进的P-N异质结

    公开(公告)号：US20130298985A1

    公开(公告)日：2013-11-14

    申请号：US13876652

    申请日：2011-09-29

    申请人： Davis S. Darvish ,  Harry A. Atwater

    发明人： Davis S. Darvish ,  Harry A. Atwater

    IPC分类号： H01L21/02 ,  H01L31/0336 ,  H01L29/24

    CPC分类号： H01L21/02565 ,  C30B23/04 ,  C30B29/16 ,  H01L29/242 ,  H01L31/0336 ,  H01L31/03365 ,  H01L31/072 ,  H01L33/005 ,  Y02E10/50

    摘要： The present invention provides strategies for making higher quality p-n heterojunctions that incorporate cuprous oxide and another material suitable for forming the heterojunction. When incorporated into microelectronic devices, these improved heterojunctions would be expected to provide improved microelectronic properties such as improved defect density, in particular lower interfacial defect density at the p-n heterojunction, leading to improved microelectronic devices such as solar cell devices with improved open circuit voltage, fill factor, efficiency, current density, and the like.

    摘要翻译： 本发明提供了制造更高质量p-n异质结的策略，其中掺入了氧化亚铜和适用于形成异质结的另一种材料。 当纳入微电子器件时，预期这些改进的异质结将提供改进的微电子特性，例如改善的缺陷密度，特别是在pn异质结处的较低的界面缺陷密度，导致改进的微电子器件，例如具有改进的开路电压的太阳能电池器件， 填充因子，效率，电流密度等。

    Group IIB/VA semiconductors suitable for use in photovoltaic devices
    10.
    发明授权
    Group IIB/VA semiconductors suitable for use in photovoltaic devices 有权
    适用于光伏器件的IIB / VA系列半导体

    公开(公告)号：US08507307B2

    公开(公告)日：2013-08-13

    申请号：US13160681

    申请日：2011-06-15

    申请人： Gregory M. Kimball ,  Marty W. DeGroot ,  Nathan S. Lewis ,  Harry A. Atwater

    发明人： Gregory M. Kimball ,  Marty W. DeGroot ,  Nathan S. Lewis ,  Harry A. Atwater

    IPC分类号： H01L31/109

    CPC分类号： H01L31/18 ,  H01L31/032 ,  H01L31/0321 ,  H01L31/068 ,  Y02E10/547

    摘要： The present invention relates to devices, particularly photovoltaic devices, incorporating Group IIB/VA semiconductors such phosphides, arsenides, and/or antimonides of one or more of Zn and/or Cd. In particular, the present invention relates to methodologies, resultant products, and precursors thereof in which electronic performance of the semiconductor material is improved by causing the Group IIB/VA semiconductor material to react with at least one metal-containing species (hereinafter co-reactive species) that is sufficiently co-reactive with at least one Group VA species incorporated into the Group IIB/VA semiconductor as a lattice substituent (recognizing that the same and/or another Group VA species also optionally may be incorporated into the Group IIB/VA semiconductor in other ways, e.g., as a dopant or the like).

    摘要翻译： 本发明涉及装置，特别是掺入了IIB / VA族半导体的光伏器件，例如Zn和/或Cd中的一种或多种的磷化物，砷化物和/或锑化物。 特别地，本发明涉及其中通过使IIB / VA族半导体材料与至少一种含金属物质（以下称为共反应性物质）反应来改善半导体材料的电子性能的方法，产物及其前体 物种），其与并入作为晶格取代基的IIB / VA族半导体中的至少一种VA族物质具有充分的共反应性（认识到相同的和/或另一种VA族也可以并入IIB / VA族 半导体以其他方式，例如，作为掺杂剂等）。