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    Method for producing saturated alcohols, ketones, aldehydes and carboxylic acids
    1.
    发明授权
    Method for producing saturated alcohols, ketones, aldehydes and carboxylic acids 失效
    饱和醇，酮，醛和羧酸的制备方法

    公开(公告)号：US07145041B2

    公开(公告)日：2006-12-05

    申请号：US10482777

    申请日：2002-06-12

    申请人： Adolf Kuehnle ,  Carsten Jost ,  Roger Arthur Sheldon ,  Sandrine M. M. Chatel ,  Isabella W. C. E. Arends

    发明人： Adolf Kuehnle ,  Carsten Jost ,  Roger Arthur Sheldon ,  Sandrine M. M. Chatel ,  Isabella W. C. E. Arends

    IPC分类号： C07C45/00 ,  C07C35/00 ,  C07C27/00 ,  C07C51/10

    CPC分类号： C07C45/34 ,  C07B41/00 ,  C07C29/175 ,  C07C29/50 ,  C07C2601/20 ,  C07C49/413 ,  C07C35/205

    摘要： The invention relates to a method for catalytically oxidizing unsaturated hydrocarbons to form oxidation products, and to the production of saturated alcohols, ketones, aldehydes or carboxylic acids by subsequently hydrogenating the oxidation product. A compound of formula (I) is used as a catalyst during oxidizing in which: R1, R2=H, an aliphatic or aromatic alkoxy radical, carboxyl radical, alkoxycarbonyl radical or hydrocarbon radical, each having 1 to 20 carbon atoms, SO3H, NH2, OH, F, Cl, Br, I and/or NO2, whereby R1 and R2 signify identical or different radicals or R1 and R2 can be coupled to one another via a covalent bond, with Q1, Q2=the same or different, C, CH, N; X, Z=C, S or CH2; Y=O or OH; k=0, 1 or 2; 1=0, 1 or 2; m=1 to 100 in the presence of a radical initiator. Peroxy compounds or azo compounds can be used as radical initiators. Preferred substrates are cyclic aliphatic or aromatic compounds.

    摘要翻译： 本发明涉及一种催化氧化不饱和烃以形成氧化产物的方法，以及通过随后氢化氧化产物来生产饱和醇，酮，醛或羧酸。 式（I）化合物在氧化过程中用作催化剂，其中：R 1，R 2 = H，脂族或芳族烷氧基，羧基，烷氧基羰基或烃基，各自具有1至20个碳原子，SO 3 H，NH 2 ，OH，F，Cl，Br，I和/或NO 2，其中R1和R2表示相同或不同的基团，或者R1和R2可以通过共价键彼此偶联，其中Q1，Q2 =相同或不同的C ，CH，N; X，Z = C，S或CH 2; Y = O或OH; k = 0,1或2; 1 = 0,1或2; 在自由基引发剂的存在下，m = 1〜100。 过氧化合物或偶氮化合物可用作自由基引发剂。 优选的底物是环状脂族或芳族化合物。

    Transparent masterbatches for thermoplastics
    3.
    发明授权
    Transparent masterbatches for thermoplastics 失效
    用于热塑性塑料的透明母粒

    公开(公告)号：US07598307B2

    公开(公告)日：2009-10-06

    申请号：US10556719

    申请日：2004-03-18

    申请人： Adolf Kuehnle ,  Carsten Jost

    发明人： Adolf Kuehnle ,  Carsten Jost

    IPC分类号： B60C1/00 ,  C08K5/24 ,  C08K5/54 ,  A61Q19/00

    CPC分类号： C08L83/04 ,  C08G77/045 ,  C08G77/12 ,  C08G77/14 ,  C08G77/16 ,  C08G77/18 ,  C08G77/20 ,  C08G77/24 ,  C08G77/26 ,  C08G77/46 ,  C08G77/50 ,  C08G77/60 ,  C08J3/226 ,  C08L83/06 ,  C08L83/08 ,  C08L2666/02

    摘要： The invention relates to a transparent masterbatch for improving the surface properties of thermoplastics, said masterbatch containing from 10% to 60% by weight of polyhedral oligomeric silicon-oxygen cluster units in accordance with the formula [(RaXb,SiO1-5)m(RCXdSIO)n(ReXfSi2O2.5)o(RgXhSi2O2)p] where: a, b, c=0-1; d=1-2; e, f, g=0-3; h=1-4; m+n+o+p≧4; a+b=1; c+d=2; e+f=3 and g+h=4; R=hydrogen atom, alkyl, cycloalkyl, alkenyl, cycloalkenyl, alkynyl, cycloalkynyl group or polymer unit, each substituted or unsubstituted, or further functionalized polyhedral oligomeric silicon-oxygen cluster units attached via a polymer unit or a bridging unit, X=oxy, hydroxy, alkoxy, carboxy, silyl, alkylsilyl, alkoxysilyl, siloxy, alkylsiloxy, alkoxysiloxy, silylalkyl, alkoxysilylalkyl, alkylsilylalkyl, halogen, epoxy, ester, fluoroalkyl, isocyanate, blocked isocyanate, acrylate, methacrylate, nitrile, amino, phosphine or polyether group or substituents of type R containing at least one such group of type X the substituents of type R being identical or different and the substituents of type X being identical or different and from 40% to 9011/o by weight of a thermoplastic carrier material, and to a transparent thermoplastic and to its production process.

    摘要翻译： 本发明涉及一种用于改善热塑性塑料表面性能的透明母料，所述母料含有按重量计10％至60％重量的多面体低聚硅 - 氧簇簇单元[（RaXb，SiO1-5）m（RCXdSIO ）n（ReXfSi2O2.5）o（RgXhSi2O2）p]其中：a，b，c = 0-1; d = 1-2; e，f，g = 0-3; h = 1-4; m + n + o + p> = 4; a + b = 1; c + d = 2; e + f = 3，g + h = 4; R =氢原子，烷基，环烷基，烯基，环烯基，炔基，环炔基或聚合物单元，每个取代或未取代的或通过聚合单元或桥接单元连接的其它官能化多面体低聚硅 - 氧簇簇，X =氧， 羟基，烷氧基，羧基，甲硅烷基，烷基甲硅烷氧基，烷氧基甲硅烷氧基，甲硅烷基烷基，烷氧基甲硅烷基烷基，烷基甲硅烷基烷基，卤素，环氧基，酯，氟代烷基，异氰酸酯，封端异氰酸酯，丙烯酸酯，甲基丙烯酸酯，腈，氨基，膦或聚醚基团或 R型的取代基包含至少一个这种X型基团，R型取代基相同或不同，并且X型取代基相同或不同，为热塑性载体材料的重量百分比为40％至9011 / 透明的热塑性塑料及其生产工艺。

    Process for producing low-k dielectric films
    4.
    发明授权
    Process for producing low-k dielectric films 失效
    低k电介质薄膜的制造方法

    公开(公告)号：US07410914B2

    公开(公告)日：2008-08-12

    申请号：US10563450

    申请日：2004-06-02

    申请人： Adolf Kuehnle ,  Carsten Jost ,  Hartwig Rauleder ,  Come Rentrop ,  Roelant Van Dam ,  Klaas Timmer ,  Hartmut Fischer

    发明人： Adolf Kuehnle ,  Carsten Jost ,  Hartwig Rauleder ,  Come Rentrop ,  Roelant Van Dam ,  Klaas Timmer ,  Hartmut Fischer

    IPC分类号： H01L21/00

    CPC分类号： H01L21/02126 ,  C09D183/04 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695

    摘要： The invention relates to processes for producing low-k dielectric films on semiconductors or electrical circuits, which comprises using incompletely condensed polyhedral oligomeric silsesquioxanes of the formula [(RaXbSiO1.5)m(RcYdSiO)n] with: a, b=0-1; c, d=1; m+n≧3; a+b=1; n, m≧1, R=hydrogen atom or alkyl, cycloalkyl, alkenyl, cycloalkenyl, alkynyl, cycloalkynyl, aryl or heteroaryl group, in each case substituted or unsubstituted, X=an oxy, hydroxyl, alkoxy, carboxyl, silyl, silyloxy, halogen, epoxy, ester, fluoroalkyl, isocyanate, acrylate, methacrylate, nitrile, amino or phosphine group or substituents of type R containing at least one such group of type X, Y=hydroxyl, alkoxy or a substituent of type O—SiZ1Z2Z3, where Z1, Z2 and Z3 are fluoroalkyl, alkoxy, silyloxy, epoxy, ester, acrylate, methacrylate or a nitrile group or substituents of type R and are identical or different, not only the substituents of type R being identical or different but also the substituents of type X and Y in each case being identical or different, and comprising at least one hydroxyl group as substituent of type Y, for producing the film, and to low-k dielectric films produced by this process.

    摘要翻译： 本发明涉及用于在半导体或电路上生产低k电介质膜的方法，其包括使用下式的不完全缩合的多面体低聚倍半硅氧烷：[（R a）a＆lt; b＆gt; 其中：a（a）和（c），m ，b = 0-1; c，d = 1; m + n> = 3; a + b = 1; n，m = 1，R =氢原子或烷基，环烷基，烯基，环烯基，炔基，环炔基，芳基或杂芳基，各自为取代或未取代的，X =氧基，羟基，烷氧基，羧基，甲硅烷基， 卤素，环氧基，酯，氟代烷基，异氰酸酯，丙烯酸酯，甲基丙烯酸酯，腈，氨基或膦基或含有至少一个X，Y =羟基，烷氧基或O-SiZ型取代基的至少一种的R型取代基， 其中Z 1，Z 2和Z 3是氟代烷基，烷氧基，甲硅烷氧基，环氧基，酯，丙烯酸酯，甲基丙烯酸酯或腈基或R的取代基相同或不同，不仅R的取代基相同或不同，而且取代基 X和Y各自相同或不同，并且包含至少一个作为Y型取代基的羟基，用于制备该膜，以及通过该方法制备的低k电介质膜。

    Process for producing low-k dielectric films
    5.
    发明申请
    Process for producing low-k dielectric films 失效
    低k电介质薄膜的制造方法

    公开(公告)号：US20070166456A1

    公开(公告)日：2007-07-19

    申请号：US10563450

    申请日：2004-06-02

    申请人： Adolf Kuehnle ,  Carsten Jost ,  Hartwig Rauleder ,  Come Rentrop ,  Roelant Van Dam ,  Klaas Timmer ,  Hartmut Fischer

    发明人： Adolf Kuehnle ,  Carsten Jost ,  Hartwig Rauleder ,  Come Rentrop ,  Roelant Van Dam ,  Klaas Timmer ,  Hartmut Fischer

    IPC分类号： B05D3/12 ,  B05D3/02

    CPC分类号： H01L21/02126 ,  C09D183/04 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695

    摘要： The invention relates to processes for producing low-k dielectric films on semiconductors or electrical circuits, which comprises using incompletely condensed polyhedral oligomeric silsesquioxanes of the formula [(RaXbSiO1.5)m(RcYdSiO)n] with: a, b=0-1; c, d=1; m+n≧3; a+b=1; n, m≧1, R=hydrogen atom or alkyl, cycloalkyl, alkenyl, cycloalkenyl, alkynyl, cycloalkynyl, aryl or heteroaryl group, in each case substituted or unsubstituted, X=an oxy, hydroxyl, alkoxy, carboxyl, silyl, silyloxy, halogen, epoxy, ester, fluoroalkyl, isocyanate, acrylate, methacrylate, nitrile, amino or phosphine group or substituents of type R containing at least one such group of type X, Y=hydroxyl, alkoxy or a substituent of type O—SiZ1Z2Z3, where Z1, Z2 and Z3 are fluoroalkyl, alkoxy, silyloxy, epoxy, ester, acrylate, methacrylate or a nitrile group or substituents of type R and are identical or different, not only the substituents of type R being identical or different but also the substituents of type X and Y in each case being identical or different, and comprising at least one hydroxyl group as substituent of type Y, for producing the film, and to low-k dielectric films produced by this process.

    摘要翻译： 本发明涉及用于在半导体或电路上生产低k电介质膜的方法，其包括使用下式的不完全缩合的多面体低聚倍半硅氧烷：[（R a）a＆lt; b＆gt; 其中：a（a）和（c），m ，b = 0-1; c，d = 1; m + n> = 3; a + b = 1; n，m = 1，R =氢原子或烷基，环烷基，烯基，环烯基，炔基，环炔基，芳基或杂芳基，各自为取代或未取代的，X =氧基，羟基，烷氧基，羧基，甲硅烷基， 卤素，环氧基，酯，氟代烷基，异氰酸酯，丙烯酸酯，甲基丙烯酸酯，腈，氨基或膦基或含有至少一个X，Y =羟基，烷氧基或O-SiZ型取代基的至少一种的R型取代基， 其中Z 1，Z 2和Z 3是氟代烷基，烷氧基，甲硅烷氧基，环氧基，酯，丙烯酸酯，甲基丙烯酸酯或腈基或R的取代基相同或不同，不仅R的取代基相同或不同，而且取代基 X和Y各自相同或不同，并且包含至少一个作为Y型取代基的羟基，用于制备该膜，以及通过该方法制备的低k电介质膜。

    Radiation-curable powder coating compositions and their use
    6.
    发明申请
    Radiation-curable powder coating compositions and their use 审中-公开
    可辐射固化粉末涂料组合物及其用途

    公开(公告)号：US20050009945A1

    公开(公告)日：2005-01-13

    申请号：US10887103

    申请日：2004-07-09

    申请人： Andreas Wenning ,  Friedrich Schmidt ,  Adolf Kuehnle ,  Carsten Jost ,  Marielle Wouters ,  Henk van Bracht

    发明人： Andreas Wenning ,  Friedrich Schmidt ,  Adolf Kuehnle ,  Carsten Jost ,  Marielle Wouters ,  Henk van Bracht

    IPC分类号： C09D4/00 ,  C08F2/46 ,  C08K5/549 ,  C09D5/00 ,  C09D5/03 ,  C09D7/12 ,  C09D133/00 ,  C09D175/04 ,  C09D183/04 ,  C08G2/00 ,  C08J3/28

    CPC分类号： C09D5/03 ,  C08K5/549

    摘要： A radiation-curable powder coating composition, contains: I. a binder containing at least one compound crosslinkable by actinic radiation; and II. at least one compound containing polyhedral oligomeric silicon-oxygen cluster units, represented by the formula [(RaXbSiO1.5)m(RcXdSiO)n(ReXfSi2O2.5)o(RgXhSi2O2)p]wherein a, b, c=0-1; d=1-2; e, f, g=0-3; h=1-4; m+n+o+p=4; a+b=1; c+d=2; e+f=3 and g+h=4; R=a hydrogen atom, alkyl, cycloalkyl, alkenyl, cycloalkenyl, alkynyl, cycloalkynyl, aryl or heteroaryl group or polymer unit, each of which is substituted or unsubstituted, or further functionalized polyhedral oligomeric silicon-oxygen cluster units, attached via a polymer unit or a bridge unit, X=an oxy, hydroxyl, alkoxy, carboxyl, silyl, alkylsilyl, alkoxysilyl, siloxy, alkylsiloxy, alkoxysiloxy, silylalkyl, alkoxysilylalkyl, alkylsilylalkyl, halo, epoxy, ester, fluoroalkyl, isocyanate, blocked isocyanate, acrylate, methacrylate, nitrile, amino or phosphine group or substituents R containing at least one group X, the substituents R being identical or different and the substituents X being identical or different, and III. auxiliaries and additives.

    摘要翻译： 一种可辐射固化的粉末涂料组合物，包含：I.含有至少一种可通过光化辐射可交联的化合物的粘合剂; 和II。 由式[（RaXbSiO1.5）m（RcXdSiO）n（ReXfSi2O2））（RgXhSi2O2）p]表示的至少一种含多面体低聚硅 - 氧簇单元的化合物，其中a，b，c = 0-1; d = 1-2; e，f，g = 0-3; h = 1-4; m + n + o + p = 4; a + b = 1; c + d = 2; e + f = 3，g + h = 4; R =氢原子，烷基，环烷基，烯基，环烯基，炔基，环炔基，芳基或杂芳基或聚合物单元，其各自为取代或未取代的或通过聚合物单元连接的其它官能化多面体低聚硅 - 氧簇单元 或桥接单元，X =氧基，羟基，烷氧基，羧基，甲硅烷基，烷基甲硅烷基，烷氧基甲硅烷基，甲硅烷氧基，烷基甲硅烷氧基，烷氧基甲硅烷氧基，甲硅烷基烷基，烷氧基甲硅烷基烷基，烷基甲硅烷基烷基，卤素，环氧基，酯，氟烷基，异氰酸酯，封端异氰酸酯， 腈，氨基或膦基或含有至少一个基团X的取代基R，取代基R相同或不同，取代基X相同或不同，以及III。 助剂和助剂。

    Functionalized polyherdral oligomeric silicon-oxygen clusters as cross-linking agents
    8.
    发明申请
    Functionalized polyherdral oligomeric silicon-oxygen clusters as cross-linking agents 审中-公开
    官能化多聚低聚硅氧簇作为交联剂

    公开(公告)号：US20060058488A1

    公开(公告)日：2006-03-16

    申请号：US10511593

    申请日：2003-05-02

    申请人： Adolf Kuhnle ,  Carsten Jost ,  Hendrikus Abbenhuis

    发明人： Adolf Kuhnle ,  Carsten Jost ,  Hendrikus Abbenhuis

    IPC分类号： C08G77/04

    CPC分类号： C08K5/0025 ,  C08K5/549

    摘要： The invention relates to a crosslinker for crosslinking matrix materials, to the matrix resulting therefrom, to the method employed therefor, and to the use of said crosslinker, the crosslinker comprising functionalized polyhedral oligomeric silicon-oxygen cluster units of the formula [(RaXbSiO1.5)m(RcXdSiO)n(ReXfSi2O2.5)o(RgXhSi2O2)p with a,b,c=0-1; d=1-2; e,f,g=0-3; h=1-4; m+n+o+p≧4; a+b=1; c+d=2; e+f=3 and g+h=4; R=hydrogen atom, alkyl, cycloalkyl, alkenyl, cyclo-alkenyl, alkynyl, cycloalkynyl, aryl, heteroaryl group or polymer unit, which are in each case substituted or unsubstituted or further functionalized polyhedral oligomeric silicon-oxygen cluster units, which are attached by way of a polymer unit or a bridging unit, X=oxy, hydroxyl, alkoxy, carboxyl, silyl, alkyl-silyl, alkoxysilyl, siloxy, alkylsiloxy, alkoxy-siloxy, silylalkyl, alkoxysilylalkyl, alkylsilyl-alkyl, halogen, epoxy, ester, fluoroalkyl, isocyanate, blocked isocyanate, acrylate, methacrylate, nitrile, amino, phosphine group or substituents of the type R containing at least one such group of the type X, the substituents of the type R being identical or different and the substituents of the type X being identical or different.

    摘要翻译： 本发明涉及用于交联基质材料的交联剂，由其得到的基质，其所用的方法，以及所述交联剂的用途，所述交联剂包括形式为官能化的多面体低聚硅 - 氧簇单元