公开(公告)号：US20150255242A1

公开(公告)日：2015-09-10

申请号：US14201747

申请日：2014-03-07

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： William DIVERGILIO ,  Stephen SAVAS ,  Susan FELCH ,  Tienyu SHENG ,  Hao CHEN

IPC: H01J37/08 ,  H01J37/30 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J37/3007 ,  H01J37/3171 ,  H01J37/32412 ,  H01J37/3266 ,  H01J2237/061 ,  H01J2237/083

Abstract: A plasma-based material modification system for material modification of a work piece may include a plasma source chamber coupled to a process chamber. A support structure, configured to support the work piece, may be disposed within the process chamber. The plasma source chamber may include a first plurality of magnets, a second plurality of magnets, and a third plurality of magnets that surround a plasma generation region within the plasma source chamber. The plasma source chamber may be configured to generate a plasma having ions within the plasma generation region. The third plurality of magnets may be configured to confine a majority of electrons of the plasma having energy greater than 10 eV within the plasma generation region while allowing ions from the plasma to pass through the third plurality of magnets into the process chamber for material modification of the work piece.

Abstract translation: 用于工件的材料改性的等离子体材料改性系统可以包括耦合到处理室的等离子体源室。 构造成支撑工件的支撑结构可以设置在处理室内。 等离子体源室可以包括第一多个磁体，第二多个磁体和围绕等离子体源室中的等离子体产生区域的第三多个磁体。 等离子体源室可以被配置为产生在等离子体产生区域内具有离子的等离子体。 第三多个磁体可以被配置为在等离子体产生区域内限制具有大于10eV的能量的等离子体的大部分电子，同时允许来自等离子体的离子通过第三多个磁体进入处理室，用于材料修饰 工件。

公开(公告)号：US20160203950A1

公开(公告)日：2016-07-14

申请号：US14595813

申请日：2015-01-13

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Anwar HUSAIN ,  Tzuyuan YIIN ,  Tienyu SHENG

IPC: H01J37/317 ,  C23C14/48 ,  H01J37/244 ,  G01K7/22 ,  H01J37/20

CPC classification number: H01J37/3171 ,  C23C14/48 ,  G01K7/22 ,  H01J37/185 ,  H01J37/20 ,  H01J37/244 ,  H01J2237/2001 ,  H01J2237/202 ,  H01J2237/20292 ,  H01J2237/31701 ,  H01J2237/31705

Abstract: A method for a recipe of a low temperature implantation comprises: pre-cooling a workpiece transferred from a FOUP to a lower temperature to meet the recipe, implanting the workpiece according to the recipe, and post-heating the workpiece to a higher temperature before returning the workpiece to the FOUP. Further, an ion implanter comprising a process chamber, a FOUP, a cooling module and a heating module is provided. The workpiece can be implanted according to the recipe in the process chamber. The FOUP can transfer the workpiece toward and away from the process chamber. The cooling module is disposed outside the process chamber and can pre-cool the workpiece to the lower temperature to meet the recipe before implanting the workpiece. The heating module is disposed outside the process chamber and can post-heat the workpiece to the higher temperature before returning the workpiece to the FOUP.

Abstract translation: 一种用于低温植入配方的方法包括：将从FOUP传送的工件预冷到较低温度以满足配方，根据配方植入工件，并在返回之前将工件后加热到更高的温度 工件到FOUP。 此外，提供了包括处理室，FOUP，冷却模块和加热模块的离子注入机。 可以根据处理室中的配方植入工件。 FOUP可以将工件朝向和远离处理室传送。 冷却模块设置在处理室外部，并且可以在植入工件之前将工件预冷却到较低温度以满足配方。 加热模块设置在处理室外部，并可在将工件返回到FOUP之前将工件后加热到更高的温度。

公开(公告)号：US20160233047A1

公开(公告)日：2016-08-11

申请号：US15133619

申请日：2016-04-20

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Daniel TANG ,  Tienyu SHENG

IPC: H01J37/02 ,  H01J37/32 ,  H01L21/265

CPC classification number: H05H3/02 ,  H01J37/026 ,  H01J37/08 ,  H01J37/3171 ,  H01J37/3211 ,  H01J37/32357 ,  H01J37/32412 ,  H01J37/32422 ,  H01J37/3266 ,  H01J37/32688 ,  H01J2237/061 ,  H01J2237/083

Abstract: Systems and processes for plasma-based material modification of a work piece are provided. In an example process, a first plasma in a plasma source chamber is generated. A magnetic field is generated using a plurality of magnets. The magnetic field confines electrons of the first plasma having energy greater than 10 eV within the plasma source chamber. A second plasma is generated in a process chamber coupled to the plasma source chamber. An ion beam is generated in the process chamber by extracting ions from the first plasma through the plurality of magnets. The ion beam travels through the second plasma and is neutralized by the second plasma to generate a neutral beam. The work piece is positioned in the process chamber such that the neutral beam treats a surface of the work piece.

Abstract translation: 提供了工件等离子体材料改性的系统和工艺。 在示例性过程中，产生等离子体源室中的第一等离子体。 使用多个磁体产生磁场。 磁场限制等离子体源室内具有大于10eV的能量的第一等离子体的电子。 在耦合到等离子体源室的处理室中产生第二等离子体。 在处理室中通过从多个磁体中提取离子从第一等离子体中产生离子束。 离子束穿过第二等离子体并被第二等离子体中和以产生中性光束。 工件定位在处理室中，使得中性梁处理工件的表面。

公开(公告)号：US20160076142A1

公开(公告)日：2016-03-17

申请号：US14952624

申请日：2015-11-25

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Tienyu SHENG ,  Hao CHEN

IPC: C23C14/48 ,  C23C14/30 ,  H01L21/265 ,  C23C14/22

CPC classification number: H01L21/265 ,  H01J37/08 ,  H01J37/317 ,  H01J37/32412 ,  H01J37/3266 ,  H01J2237/061 ,  H01J2237/083

Abstract: The present invention provides a deposition apparatus and deposition method using the same. The deposition apparatus comprises: a process chamber, wherein a work piece is disposed therein; a plasma source chamber coupled to the process chamber, the plasma source chamber comprising a first plasma generator for ionizing a first gas in the plasma source chamber to generate a first plasma having ions, the ions of the first plasma with ions bombard the work piece; and a second plasma generator disposed within the process chamber, the second plasma generator ionized a second gas in the process chamber to generate a second plasma having radical, the second plasma having radical deposits a surface of the work piece.

Abstract translation: 本发明提供一种使用其的沉积设备和沉积方法。 沉积设备包括：处理室，其中设置工件; 等离子体源室，其耦合到处理室，等离子体源室包括用于离子化等离子体源室中的第一气体的第一等离子体发生器，以产生具有离子的第一等离子体，第一等离子体的离子用离子轰击工件; 以及设置在所述处理室内的第二等离子体发生器，所述第二等离子体发生器将所述处理室中的第二气体离子化，以产生具有自由基的第二等离子体，所述第二等离子体具有沉积工件表面的自由基。