公开(公告)号：US06283273B1

公开(公告)日：2001-09-04

申请号：US09456457

申请日：1999-12-08

申请人： Akihiro Miyauchi ,  Yohsuke Inoue ,  Takaya Suzuki

发明人： Akihiro Miyauchi ,  Yohsuke Inoue ,  Takaya Suzuki

IPC分类号： B65G4734

CPC分类号： H01L21/67745 ,  H01L21/67748 ,  Y10S414/141

摘要： A substrate processing apparatus comprises a substrate processing chamber, a transfer chamber, a substrate mounting body having a through hole formed in a vertical direction and being provided in the substrate processing chamber, a substrate lifting member capable of vertically moving in the through hole, a first arm, capable of extending from the transfer chamber into the substrate processing chamber, for transferring the substrate in a horizontal direction, a second arm capable of extending from the transfer chamber into the substrate processing chamber, capable of moving in a vertical direction and separating the substrate upward from the substrate mounting body by moving the substrate lifting member upward, and a driving mechanism provided in the transfer chamber for extending the first and second arms from the transfer chamber into the substrate processing chamber and for moving the first arm in the horizontal direction and moving the second arm in the vertical direction.

摘要翻译： 基板处理装置包括基板处理室，转印室，具有沿垂直方向形成的通孔并设置在基板处理室中的基板安装体，能够在通孔中垂直移动的基板升降构件， 第一臂能够从传送室延伸到基板处理室中，用于沿水平方向传送基板，第二臂能够从传送室延伸到基板处理室中，能够沿垂直方向移动并分离 所述基板通过向上移动所述基板提升构件而从所述基板安装体向上移动;以及驱动机构，其设置在所述传送室中，用于将所述第一和第二臂从所述传送室延伸到所述基板处理室中并且用于使所述第一臂在所述水平方向上移动 方向并且沿垂直方向移动第二臂。

公开(公告)号：US5736753A

公开(公告)日：1998-04-07

申请号：US521548

申请日：1995-08-30

申请人： Toshiyuki Ohno ,  Yohsuke Inoue ,  Daisuke Kawase ,  Yuzo Kozono ,  Takaya Suzuki ,  Tsutomu Yatsuo

发明人： Toshiyuki Ohno ,  Yohsuke Inoue ,  Daisuke Kawase ,  Yuzo Kozono ,  Takaya Suzuki ,  Tsutomu Yatsuo

IPC分类号： H01L21/04 ,  H01L29/24 ,  H01L29/78 ,  H01L29/808 ,  H01L31/0312 ,  H01L29/74 ,  H01L29/861

CPC分类号： H01L29/7802 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7801 ,  H01L29/7813 ,  H01L29/8083

摘要： To provide a field-effect transistor having a large power conversion capacity and its fabrication method by decreasing the leakage current between the source and the drain of a semiconductor device made of hexagonal-system silicon carbide when the gate voltage of the semiconductor device is turned off and also decreasing the electrical resistance of the semiconductor device when the gate voltage of the semiconductor device is turned on. The main current path of the field-effect transistor is formed so that the current flowing between the source and the drain of, for example, a field-effect transistor flows in the direction parallel with the {0001} plane and a channel forming plane is parallel with the {1120} plane. �Selected Drawing!FIG. 1

摘要翻译： 为了提供具有大的功率转换能力的场效应晶体管及其制造方法，当半导体器件的栅极电压被关断时，通过减小由六方晶系碳化硅制成的半导体器件的源极和漏极之间的漏电流 并且当半导体器件的栅极电压导通时也降低半导体器件的电阻。 形成场效应晶体管的主电流路径，使得在例如场效应晶体管的源极和漏极之间流动的电流沿与{0001}平面平行的方向流动，沟道形成面为 与{1120}平面平行。 [所选图]

公开(公告)号：US4745088A

公开(公告)日：1988-05-17

申请号：US830713

申请日：1986-02-19

申请人： Yosuke Inoue ,  Takaya Suzuki ,  Masahiro Okamura ,  Noboru Akiyama ,  Masato Fujita ,  Hiroo Tochikubo ,  Shinya Iida

发明人： Yosuke Inoue ,  Takaya Suzuki ,  Masahiro Okamura ,  Noboru Akiyama ,  Masato Fujita ,  Hiroo Tochikubo ,  Shinya Iida

IPC分类号： H01L21/205 ,  C23C16/458 ,  C23C16/46 ,  H01L21/31 ,  C23C16/00

CPC分类号： C23C16/46 ,  C23C16/4584 ,  Y10S148/057 ,  Y10S148/169 ,  Y10S438/935

摘要： The vapor phase growth on semiconductor wafers is carried out by an apparatus in which a multiplicity of semiconductor wafers are held by a holder so that the semiconductor wafers lie one over another in a vertical direction, and are rotated together with the holder, the holder is placed in a heater disposed in a reaction vessel, a raw material gas supply nozzle and a raw material gas exhaust nozzle are provided within the heater so that the semiconductor wafers are interposed between the gas supply nozzle and the gas discharge nozzle, and the gas supply nozzle and the gas discharge nozzle have gas supply holes and gas discharge holes, respectively, so that a raw material gas can flow on each semiconductor wafer in horizontal directions. When the temperature of the heater is raised by a heating source to heat the semiconductor wafers, the raw material gas is supplied from the gas supply holes to each semiconductor wafer, and thus a uniform layer is grown on each semiconductor wafer from the raw material gas.

摘要翻译： 半导体晶片上的气相生长由多个半导体晶片被保持器保持的装置进行，使得半导体晶片在垂直方向上一个接一个地并且与保持器一起旋转，保持器是 放置在设置在反应容器中的加热器中，原料气体供给喷嘴和原料气体排出喷嘴设置在加热器内，使得半导体晶片插入在气体供给喷嘴和气体排出喷嘴之间，气体供给 喷嘴和气体排出喷嘴分别具有气体供给孔和气体排出孔，使得原料气体可以在水平方向上在每个半导体晶片上流动。 当加热器的温度由加热源升高以加热半导体晶片时，原料气体从气体供给孔供给到每个半导体晶片，因此从原料气体在每个半导体晶片上生长均匀的层 。

公开(公告)号：US4562637A

公开(公告)日：1986-01-07

申请号：US622584

申请日：1984-06-20

申请人： Tadao Kushima ,  Tasao Soga ,  Takaya Suzuki

发明人： Tadao Kushima ,  Tasao Soga ,  Takaya Suzuki

IPC分类号： H01L31/042 ,  H01L31/05 ,  H05K3/36 ,  H01L31/18

CPC分类号： H01L31/1876 ,  H01L31/0512 ,  H05K3/363 ,  Y02E10/50 ,  Y02P70/521 ,  Y10T29/49169 ,  Y10T29/49179 ,  Y10T29/49181

摘要： A method of manufacturing a solar battery by serially connecting a plurality of solar battery elements arranged spaced from each other. A pair of flexible films are used to sandwich the arrangement of the solar battery elements, and each of the flexible films has a plurality of conductive members formed thereon at positions respectively corresponding to the solar battery elements. However, each conductive member has one end portion extended beyond the surface of the corresponding solar battery element in the direction of the alignment of the solar battery elements. Thus, when the pair of flexible films are disposed to sandwich the solar battery elements, the extended end portion of the conductive member on the side of the light receiving surface of one solar battery element is positioned in the space between adjacent solar battery elements opposite the end portion of the conductive member on the side of the back surface of the next solar battery element. By welding both end portions of the conductive members by, for example, a laser beam, the adjacent solar battery elements are successively connected in series.

摘要翻译： 通过串联连接彼此间隔布置的多个太阳能电池元件来制造太阳能电池的方法。 使用一对柔性膜来夹持太阳能电池元件的布置，并且每个柔性膜在分别对应于太阳能电池元件的位置处形成有多个导电构件。 然而，每个导电构件具有在太阳能电池元件的对准方向上延伸超过相应的太阳能电池元件的表面的一个端部。 因此，当一对柔性膜被设置成夹持太阳能电池元件时，导电构件的一个太阳能电池元件的光接收表面侧的延伸端部位于相邻的太阳能电池元件之间的空间中 导电构件的下一个太阳能电池元件的背面侧的端部。 通过例如通过激光束焊接导电部件的两端部，相邻的太阳能电池元件依次连续地连接。

公开(公告)号：US4388342A

公开(公告)日：1983-06-14

申请号：US154025

申请日：1980-05-28

申请人： Takaya Suzuki ,  Yosuke Inoue ,  Takashi Aoyama

发明人： Takaya Suzuki ,  Yosuke Inoue ,  Takashi Aoyama

IPC分类号： C30B25/16 ,  C23C16/455 ,  C23C16/52 ,  H01L21/205 ,  H01L21/31 ,  B05D5/12

CPC分类号： H01L21/02532 ,  C23C16/455 ,  C23C16/52 ,  H01L21/02381 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  Y10T436/12

摘要： A method of forming by CVD technique a layer of material with good uniformity and reproducibility on the surfaces of a plurality of substrates supported within the reaction chamber. The feature of the invention is that a gaseous mixture containing a reaction gas is supplied into the reaction chamber from the inlet of the reaction chamber and the auxiliary gas nozzle provided between the inlet and the exhaust in a predetermined control manner. Moreover, part of the gaseous mixture within the reaction chamber is sampled from the gas flow for the measurement of the concentration of the reaction gas, and from the measured results is determined the rate of gas supply from the auxiliary gas nozzle.

摘要翻译： 通过CVD技术在支撑在反应室内的多个基板的表面上形成具有良好均匀性和再现性的材料层的方法。 本发明的特征是含有反应气体的气体混合物以预定的控制方式从反应室的入口和设置在入口和排气口之间的辅助气体喷嘴供入反应室。 此外，反应室内的气体混合物的一部分从气流中取样以测量反应气体的浓度，并且从测量结果确定来自辅助气体喷嘴的气体供应速率。

公开(公告)号：USD353584S

公开(公告)日：1994-12-20

申请号：US7548

申请日：1993-04-26

申请人： Yasuharu Sato ,  Takaya Suzuki ,  Katsuhiko Kushi ,  Kenichi Yamauchi

设计人： Yasuharu Sato ,  Takaya Suzuki ,  Katsuhiko Kushi ,  Kenichi Yamauchi

公开(公告)号：US5363682A

公开(公告)日：1994-11-15

申请号：US982982

申请日：1992-11-30

申请人： Ryo Takeda ,  Eisuke Yamanaka ,  Hidenori Kondo ,  Kiyoji Ino ,  Hiroshi Hagihara ,  Takaya Suzuki ,  Sadao Yoshizawa ,  Atsumu Nakamura

发明人： Ryo Takeda ,  Eisuke Yamanaka ,  Hidenori Kondo ,  Kiyoji Ino ,  Hiroshi Hagihara ,  Takaya Suzuki ,  Sadao Yoshizawa ,  Atsumu Nakamura

IPC分类号： B21B1/18 ,  B21B13/12 ,  B21B31/18 ,  B21B31/26 ,  B21B35/10 ,  B21B35/04

CPC分类号： B21B13/12 ,  B21B1/18 ,  B21B2203/182 ,  B21B31/18 ,  B21B31/26 ,  B21B35/10

摘要： A four-roller type sizing mill apparatus for forming round steel rods, comprises two four-roller mills each having two pair of facing rollers. One pair of facing rollers is arranged in rolling direction perpendicular to the rolling direction of the other pair of rollers. The two four-roller mills are arranged in line, with the rolling direction of one of the two four-roller mills being shifted by 45.degree. from the rolling direction of the other four-roller mill. The two pair of rollers of a first four-roller mill positioned closer to the rolling material inlet are separated from each other by a distance which is greater than zero and not greater than five times the projected contact length of one of the pair of rollers positioned closer to the rolling material inlet. The distance is measured between a first standard straight line which passes through the centers of one of the pair of rollers and lies on a plane parallel to the side surfaces of the same pair of rollers and a second standard straight line obtained by projecting the axes of the other pair of rollers onto the above-mentioned plane.

摘要翻译： 用于形成圆钢棒的四辊式定型磨机装置包括两个四辊磨机，每个具有两对面对辊。 一对面对辊沿垂直于另一对辊的轧制方向的轧制方向布置。 两个四辊磨机排列成一列，两个四辊磨机之一的轧制方向从另一个四辊磨机的轧制方向偏移45°。 位于更靠近轧制材料入口的第一个四辊磨机的两对辊彼此分开一段距离，该距离大于零和不大于定位的一对辊之一的投影接触长度的五倍 更靠近滚动材料入口。 在通过一对辊中的一个辊的中心并位于平行于同一对辊的侧表面的平面上的第一标准直线之间测量距离，以及通过将 另一对辊到上述平面上。

公开(公告)号：USD341578S

公开(公告)日：1993-11-23

申请号：US809072

申请日：1991-12-19

申请人： Yasuharu Sato ,  Takaya Suzuki ,  Katsuhiko Kushi

设计人： Yasuharu Sato ,  Takaya Suzuki ,  Katsuhiko Kushi

公开(公告)号：US4693758A

公开(公告)日：1987-09-15

申请号：US784033

申请日：1985-10-04

申请人： Yutaka Kobayashi ,  Takaya Suzuki

发明人： Yutaka Kobayashi ,  Takaya Suzuki

IPC分类号： H01L29/78 ,  H01L21/20 ,  H01L21/205 ,  H01L21/26 ,  H01L21/268 ,  H01L21/428 ,  H01L21/86 ,  H01L27/12 ,  H01L29/786 ,  H01L21/263 ,  H01L21/225

CPC分类号： H01L27/12 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02516 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02686 ,  H01L21/268 ,  H01L29/78657 ,  Y10S117/904 ,  Y10S438/967

摘要： This invention relates to improvements in the SOS technology including the so-called laser annealing processing. According to this invention, a semiconductor layer of an SOS structure consists of the three layers of an interface layer made up of twins, a seed crystalline layer and a re-grown layer far thicker than the preceding two layers when viewed from the side of an insulating substrate. The re-grown layer is formed in such a way that a semiconductor layer deposited on the insulating substrate is irradiated with an electromagnetic wave, for example, pulsed ruby laser beam, which is absorbed substantially uniformly by a portion except the interface layer and the seed crystalline layer. According to this invention, the quality of the re-grown layer is improved, and the mobility of carriers is enhanced. As a result, the operating speed of a semiconductor device employing the SOS structure is raised, and the leakage current is reduced.

摘要翻译： 本发明涉及SOS技术的改进，包括所谓的激光退火处理。 根据本发明，SOS结构的半导体层由三层由双胞胎组成的界面层，晶种层和再生长层组成，当从 绝缘基板。 再生长层以这样的方式形成，使得沉积在绝缘基板上的半导体层被电磁波照射，例如脉冲红宝石激光束，其被除了界面层和种子之外的部分基本均匀地吸收 晶体层。 根据本发明，再生层的质量得到改善，并且载体的迁移率增强。 结果，使用SOS结构的半导体器件的工作速度提高，并且泄漏电流降低。

公开(公告)号：US08957228B2

公开(公告)日：2015-02-17

申请号：US13995519

申请日：2011-10-28

申请人： Haruhiko Fuwa ,  Makoto Sasaki ,  Hiroshi Kubo ,  Takaya Suzuki

发明人： Haruhiko Fuwa ,  Makoto Sasaki ,  Hiroshi Kubo ,  Takaya Suzuki

IPC分类号： C07D321/00 ,  C07D493/16 ,  C07D493/18

CPC分类号： C07D493/16 ,  C07D493/18

摘要： The present invention relates to a macrolide compound expected to have a cell growth-inhibiting activity and a novel anticancer drug utilizing the compound. Specifically, the invention relates to a compound represented by Formula (I) or (II) or a pharmaceutically acceptable salt thereof and relates to a cell growth inhibitor and an anticancer drug each containing the compound or the salt as an active ingredient.

摘要翻译： 本发明涉及预期具有细胞生长抑制活性的大环内酯类化合物和利用该化合物的新型抗癌药物。 具体地说，本发明涉及由式（I）或（II）表示的化合物或其药学上可接受的盐，涉及各自含有化合物或盐作为有效成分的细胞生长抑制剂和抗癌药。