Method for the production of low density copolymers of ethylene
    1.
    发明授权
    Method for the production of low density copolymers of ethylene 失效
    乙烯低密度共聚物生产方法

    公开(公告)号:US4190614A

    公开(公告)日:1980-02-26

    申请号:US784308

    申请日:1977-04-04

    申请人: Akira Ito Kenji Iwata

    发明人: Akira Ito Kenji Iwata

    摘要: In producing a low density polyethylene by a slurry copolymerization of ethylene and an .alpha.-olefin with use of a catalyst consisting of a magnesium compound-supported titanium and/or vanadium compound and an organoaluminum compound, a certain amount of ethylene is subject to a pre-polymerization in the presence of said catalyst prior to the copolymerization. Successively, the slurry copolymerization of ethylene and an .alpha.-olefin is effected in a low-boiling diluent to obtain a low density polyethylene of 0.925-0.950 in density, covering various grades in a wide range.

    摘要翻译: 在通过使用由镁化合物负载的钛和/或钒化合物和有机铝化合物组成的催化剂通过乙烯和α-烯烃的淤浆共聚制备低密度聚乙烯时,一定量的乙烯经受预 在共聚之前在所述催化剂存在下进行聚合。 接着,在低沸点稀释剂中进行乙烯和α-烯烃的淤浆共聚,得到密度为0.925-0.950的低密度聚乙烯,覆盖了宽范围内的各种等级。

    Catalyst for polymerizing .alpha.-olefins
    2.
    发明授权
    Catalyst for polymerizing .alpha.-olefins 失效
    用于聚合α-烯烃的催化剂

    公开(公告)号:US4175171A

    公开(公告)日:1979-11-20

    申请号:US814690

    申请日:1977-07-11

    摘要: A catalyst for polymerizing .alpha.-olefins composed of a titanium composition formed by heating a co-comminuted mixture of a magnesium halide and a complex of an aluminum halide and a carboxylic acid ester of the formula R.sup.1 COOR.sup.2, with titanium tetra-chloride; and an organic aluminum compound of the formula AlR.sup.3 mH.sup.3 --m; and optionally added thereto at least one component selected from an alkyl aluminum halide of the formula AlR.sup.4 nX.sub.3 --n; a carboxylic acid ester of the formula R.sup.5 COOR.sup.6 ; and its complex formed with an aluminum halide; is disclosed.

    摘要翻译: 用于聚合由通过加热卤化镁和卤化铝与式R 1 COOR 2的羧酸酯的配合物的共粉碎混合物与四氯化钛形成的钛组合物组成的α-烯烃的催化剂; 和式AlR 3 mH 3-m的有机铝化合物; 并且任选地加入至少一种选自式AlR 4 nX 3-n的烷基铝卤化物的组分; 式R 5 COOR 6的羧酸酯; 其复合物与卤化铝形成; 被披露。

    Catalyst for polymerizing .alpha.-olefins
    3.
    发明授权
    Catalyst for polymerizing .alpha.-olefins 失效
    用于聚合α-烯烃的催化剂

    公开(公告)号:US4282114A

    公开(公告)日:1981-08-04

    申请号:US116206

    申请日:1980-01-28

    IPC分类号: C08F4/02 C08F4/64 C08F10/00

    CPC分类号: C08F10/00 C08F4/022

    摘要: Disclosed is a catalyst for polymerizing .alpha.-olefins which comprises(A) a composition obtained by co-comminuting(a) a magnesium halide,(b) an organic acid ester,(c) a halogenated aliphatic or alicyclic hydrocarbon,(d) at least one ingredient selected from the group consisting of aliphatic hydrocarbons, alicyclic hydrocarbons, aromatic hydrocarbons, halogenated aromatic hydrocarbons, liquid propylene oligomers and aromatic ethers, and(e) an aluminum halide optionally added thereto and then heat-treating the resulting mixture together with titanium tetrachloride;(B) an organic aluminum compound; and(C) an organic acid ester or a complex thereof with an aluminum halide.

    摘要翻译: 公开了用于聚合α-烯烃的催化剂,其包括(A)通过共混粉碎(a)卤化镁,(b)有机酸酯,(c)卤化脂族或脂环族烃,(d)在 至少一种选自脂族烃,脂环族烃,芳族烃,卤代芳烃,液态丙烯低聚物和芳族醚的成分,和(e)任选加入的卤化铝,然后将所得混合物与钛一起热处理 四氯化碳 (B)有机铝化合物; 和(C)有机酸酯或其与卤化铝的络合物。

    Method for polymerization of ethylene
    4.
    发明授权
    Method for polymerization of ethylene 失效
    乙烯聚合方法

    公开(公告)号:US4105847A

    公开(公告)日:1978-08-08

    申请号:US629134

    申请日:1975-11-05

    申请人: Akira Ito Kenji Iwata

    发明人: Akira Ito Kenji Iwata

    IPC分类号: C08F4/02 C08F10/02

    摘要: Ethylene is polymerized or copolymerized with an .alpha.-olefin in the presence of a catalyst consisting of(A) a co-comminuted composition of:(a) a titanium compound;(b) a magnesium halide; and(c) a siloxane polymer; and(B) an organoaluminum compound.

    摘要翻译: 在由(A)共粉碎的组合物组成的催化剂存在下,乙烯与α-烯烃聚合或共聚,

    Method and system for last gasp device detection
    8.
    发明授权
    Method and system for last gasp device detection 有权
    最后一个喘气装置检测方法和系统

    公开(公告)号:US09088994B2

    公开(公告)日:2015-07-21

    申请号:US13601692

    申请日:2012-08-31

    IPC分类号: H04W24/00 H04W74/08 H04L29/14

    CPC分类号: H04W74/0841 H04L69/40

    摘要: A method is provided for device detection by a base station comprising receiving a plurality of signals over a preamble subframe from an endpoint. The plurality of signals are attempting to access an access group of the preamble subframe. Additionally, the plurality of signals are received on a random access channel using a wireless network. Further, the plurality of signals have a plurality of last gasp messages (LGMs). The method additionally comprises determining an allowable rate of collisions for the plurality of signals and determining an actual rate of collisions for the plurality of signals. The method includes increasing the size of the access group allocated to the plurality of signals having the plurality of LGMs, based on whether the actual rate of collisions exceeds the allowable rate of collisions.

    摘要翻译: 提供了一种用于由基站进行设备检测的方法,包括:从端点通过前导码子帧接收多个信号。 多个信号正试图访问前同步码子帧的接入组。 另外,使用无线网络在随机接入信道上接收多个信号。 此外,多个信号具有多个最后的喘气信息(LGM)。 该方法还包括确定多个信号的可允许冲突率并确定多个信号的实际碰撞速率。 该方法包括:基于实际的冲突率是否超过允许的冲突率,增加分配给具有多个LGM的多个信号的接入组的大小。

    Field transistor structure manufactured using gate last process
    9.
    发明授权
    Field transistor structure manufactured using gate last process 有权
    使用门最后工艺制造的场晶体管结构

    公开(公告)号:US08841674B2

    公开(公告)日:2014-09-23

    申请号:US13174083

    申请日:2011-06-30

    IPC分类号: H01L29/78 H01L21/28

    CPC分类号: H01L29/7839 G11C17/16

    摘要: According to embodiments of the invention, a field transistor structure is provided. The field transistor structure includes a semiconductor substrate, a metal gate, a polycrystalline silicon (polysilicon) layer, and first and second metal portions. The polysilicon layer has first, second, third, and fourth sides and is disposed between the semiconductor substrate on the first side and the metal gate on the second side. The polysilicon layer is also disposed between the first and second metal portions on the third and fourth sides. According to some embodiments of the present invention, the field transistor structure may also include a thin metal layer disposed between the polysilicon layer and the semiconductor substrate. The thin metal layer may be electronically coupled to each of the first and second metal portions.

    摘要翻译: 根据本发明的实施例,提供了场晶体管结构。 场晶体管结构包括半导体衬底,金属栅极,多晶硅(多晶硅)层以及第一和第二金属部分。 多晶硅层具有第一,第二,第三和第四边,并且设置在第一侧的半导体衬底和第二侧上的金属栅极之间。 多晶硅层也设置在第三和第四侧上的第一和第二金属部分之间。 根据本发明的一些实施例,场晶体管结构还可以包括设置在多晶硅层和半导体衬底之间的薄金属层。 薄金属层可以电连接到第一和第二金属部分中的每一个。