公开(公告)号：US06290580B1

公开(公告)日：2001-09-18

申请号：US09390772

申请日：1999-09-07

申请人： Hiroaki Tanaka ,  Akitoshi Yoshida ,  Yoshihisa Ogawa ,  Yusuke Inoue ,  Shunji Hakomori

发明人： Hiroaki Tanaka ,  Akitoshi Yoshida ,  Yoshihisa Ogawa ,  Yusuke Inoue ,  Shunji Hakomori

IPC分类号： B24B100

CPC分类号： B24B37/0056 ,  B24B9/065 ,  B24B37/044 ,  C09G1/02

摘要： The present invention provides a polishing compound which does not make stain grow on the surface of work-piece comprising, the dispersion containing 1-30 wt. % of metal oxide particles having 8-500 nm average diameter, acid or alkali and salt, and whose pH is 7-12. Desirably said polishing compound is the compound in which water soluble organic solvent is contained. Further, present invention provides edge polishing method and surface polishing method by use of said polishing compound.

摘要翻译： 本发明提供了在工件表面上不会使污渍生长的抛光化合物，其包含：含有1-30wt。 ％的平均直径为8-500nm的金属氧化物颗粒，酸或碱和盐，其pH为7-12。 理想地，所述抛光化合物是含有水溶性有机溶剂的化合物。 此外，本发明通过使用所述研磨化合物提供边缘抛光方法和表面抛光方法。

公开(公告)号：US06300249B1

公开(公告)日：2001-10-09

申请号：US09296283

申请日：1999-04-22

申请人： Akitoshi Yoshida ,  Yoshihisa Ogawa ,  Hiroaki Tanaka

发明人： Akitoshi Yoshida ,  Yoshihisa Ogawa ,  Hiroaki Tanaka

IPC分类号： H01L21302

CPC分类号： H01L21/02024 ,  C09G1/02

摘要： The present invention is a polishing compound comprising a colloidal solution containing 1˜15 wt. % of silicon oxide particles of 8˜500 nanometer average diameter, wherein said colloidal solution is prepared as a buffer solution which has buffering action between pH 8.7˜10.6 by the addition of one combination selected from groups composed by weak acid and strong base, strong acid and weak base or weak acid and weak base, and logarithms of reciprocal number of acid dissociation constant at 25° C. of said weak acid and/or weak base is 8.0˜12.0.

摘要翻译： 本发明是一种抛光剂，其包含含有1〜15wt。 ％的氧化硅颗粒的平均直径为8〜500nm，其中所述胶体溶液通过加入选自弱酸和强碱组成的组合之间的缓冲溶液制备，其缓冲作用在pH 8.7〜10.6之间，强 酸弱碱或弱酸弱碱，所述弱酸和/或弱碱的25℃酸解离常数相对数为8.0〜12.0。

公开(公告)号：US06238272B1

公开(公告)日：2001-05-29

申请号：US09389605

申请日：1999-09-03

申请人： Hiroaki Tanaka ,  Akitoshi Yoshida ,  Yoshihisa Ogawa

发明人： Hiroaki Tanaka ,  Akitoshi Yoshida ,  Yoshihisa Ogawa

IPC分类号： B24B100

CPC分类号： C09K3/1463 ,  C09G1/02

摘要： The present invention is a polishing compound comprising a colloidal solution of silicon oxide to which an alkaline component and an acid component are added in order to have a buffering action, wherein said alkali component is a quaternary ammonium whose carbon number per one molecular is smaller than 12, and said acid component is at least one selected from the group composed by carbonic acid, boric acid and silicic acid.

摘要翻译： 本发明是一种包含硅氧烷的胶体溶液的抛光化合物，其中加入碱性组分和酸组分以具有缓冲作用，其中所述碱组分是每1分子碳数小于 12，所述酸成分为选自由碳酸，硼酸，硅酸组成的组中的至少1种。

公开(公告)号：US10962776B2

公开(公告)日：2021-03-30

申请号：US16779843

申请日：2020-02-03

申请人： Hiroaki Tanaka ,  Toshihiro Yamashiro

发明人： Hiroaki Tanaka ,  Toshihiro Yamashiro

IPC分类号： G02B27/01

摘要： A display device includes a light source; a light deflector configured to deflect light emitted from the light source to scan as scanning light in a main scanning direction and a sub-scanning direction; a screen having a scanning area to be two-dimensionally scanned with the scanning light at a predetermined cycle, the scanning area having a first area and a second area that differ in position in the sub-scanning direction; a light receiver disposed on the screen, configured to detect the light scanning in each of the first area and the second area of the screen; and a control unit configured to adjust a position of the scanning light in the scanning area according to the number of scanning lines in each of the first area and the second area.

公开(公告)号：US09372433B2

公开(公告)日：2016-06-21

申请号：US14830352

申请日：2015-08-19

申请人： Hiroyuki Suhara ,  Hiroaki Tanaka

发明人： Hiroyuki Suhara ,  Hiroaki Tanaka

IPC分类号： G03G15/043 ,  B41J2/385 ,  B41J2/435

CPC分类号： G03G15/043 ,  B41J2/385 ,  B41J2/435

摘要： An electrostatic latent image forming method for forming, on an image carrier, an electrostatic latent image that has a pattern where there are an irradiated area and a not-irradiated area in a mixed manner, the electrostatic latent image forming method comprises; adjusting an exposure condition of an irradiated area that is included in the irradiated area and is adjacent to the not-irradiated area so that an electric field intensity of an electrostatic latent image that corresponds to the not-irradiated area is increased so as to prevent adhesion of a developer, and irradiating the image carrier with light under the adjusted exposure condition.

公开(公告)号：US20150054075A1

公开(公告)日：2015-02-26

申请号：US14501244

申请日：2014-09-30

申请人： Tadahiro Ohmi ,  Hiroaki Tanaka

发明人： Tadahiro Ohmi ,  Hiroaki Tanaka

IPC分类号： H01L29/10 ,  H01L29/417 ,  H01L29/45 ,  H01L29/78

CPC分类号： H01L29/1087 ,  H01L27/1203 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/7816

摘要： There is provided a semiconductor device. An n-type transistor is formed on a (551) surface of a silicon substrate. A silicide layer region in contact with a diffusion region (heavily doped region) of the n-type transistor has a thickness not more than 5 nm. A metal layer region in contact with the silicide layer has a thickness of 25 nm (inclusive) to 400 nm (inclusive). A barrier height between the silicide layer region and the diffusion region has a minimum value in this thickness relationship.

摘要翻译： 提供了一种半导体器件。 n型晶体管形成在硅衬底的（551）表面上。 与n型晶体管的扩散区域（重掺杂区域）接触的硅化物层区域的厚度不大于5nm。 与硅化物层接触的金属层区域的厚度为25nm（含）〜400nm（含）。 硅化物层区域和扩散区域之间的势垒高度在该厚度关系中具有最小值。

公开(公告)号：US08836150B2

公开(公告)日：2014-09-16

申请号：US13989962

申请日：2010-11-29

申请人： Hiroaki Tanaka

发明人： Hiroaki Tanaka

IPC分类号： H01L23/498 ,  H01L23/00 ,  H01L29/739 ,  H01L29/417

CPC分类号： H01L23/498 ,  H01L24/05 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L29/417 ,  H01L29/41741 ,  H01L29/7397 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05557 ,  H01L2224/05624 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48132 ,  H01L2224/4847 ,  H01L2224/48491 ,  H01L2224/49175 ,  H01L2224/85205 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/3511 ,  H01L2224/45099 ,  H01L2924/00

摘要： A semiconductor device disclosed in this description has a semiconductor substrate including an element region in which a semiconductor element is formed, and an upper surface electrode formed on an upper surface of the element region of the semiconductor substrate. The upper surface electrode has a first thickness region and a second thickness region which is thicker than the first thickness region, and a bonding wire is bonded on the second thickness region.

摘要翻译： 在本说明书中公开的半导体器件具有包括其中形成半导体元件的元件区域和形成在半导体衬底的元件区域的上表面上的上表面电极的半导体衬底。 上表面电极具有比第一厚度区域厚的第一厚度区域和第二厚度区域，并且接合线接合在第二厚度区域上。

公开(公告)号：US08704937B2

公开(公告)日：2014-04-22

申请号：US13837623

申请日：2013-03-15

申请人： Keiji Matsusaka ,  Hiroaki Tanaka

发明人： Keiji Matsusaka ,  Hiroaki Tanaka

IPC分类号： H04N5/225 ,  G02B9/34

CPC分类号： G02B3/00 ,  G02B3/04 ,  G02B13/004 ,  G02B13/18 ,  H04N5/23245

摘要： An imaging optical system, an imaging device, and a digital apparatus have a four lens construction with positive, negative, positive, and negative refractive powers. A surface position at the maximum effective diameter of the second lens element is located on the object side than a surface vertex thereof. The fourth lens element has an inflection point at a position other than the intersection of the optical axis and the fourth lens element. The optical system satisfies the following conditions. 0.7 72 ν4>50, and 0.55

摘要翻译： 成像光学系统，成像装置和数字装置具有正，负，正和负折射力的四透镜结构。 第二透镜元件的最大有效直径处的表面位置位于物体侧，而不是其表面​​顶点。 第四透镜元件在光轴和第四透镜元件的交点以外的位置具有拐点。 光学系统满足以下条件。 0.7 72＆ ; 4> 50和0.55

公开(公告)号：US20130241084A1

公开(公告)日：2013-09-19

申请号：US13989962

申请日：2010-11-29

申请人： Hiroaki Tanaka

发明人： Hiroaki Tanaka

IPC分类号： H01L23/498

CPC分类号： H01L23/498 ,  H01L24/05 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L29/417 ,  H01L29/41741 ,  H01L29/7397 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05557 ,  H01L2224/05624 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48132 ,  H01L2224/4847 ,  H01L2224/48491 ,  H01L2224/49175 ,  H01L2224/85205 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/3511 ,  H01L2224/45099 ,  H01L2924/00

摘要： A semiconductor device disclosed in this description has a semiconductor substrate including an element region in which a semiconductor element is formed, and an upper surface electrode formed on an upper surface of the element region of the semiconductor substrate. The upper surface electrode has a first thickness region and a second thickness region which is thicker than the first thickness region, and a bonding wire is bonded on the second thickness region.

摘要翻译： 在本说明书中公开的半导体器件具有包括其中形成半导体元件的元件区域和形成在半导体衬底的元件区域的上表面上的上表面电极的半导体衬底。 上表面电极具有比第一厚度区域厚的第一厚度区域和第二厚度区域，并且接合线接合在第二厚度区域上。

公开(公告)号：US20130193279A1

公开(公告)日：2013-08-01

申请号：US13878792

申请日：2011-03-28

申请人： Hiroaki Tanaka

发明人： Hiroaki Tanaka

IPC分类号： F16L3/137

CPC分类号： F16L3/137 ,  B60R16/0215 ,  F16B21/086 ,  H02G3/32 ,  Y10T24/1498

摘要： A band clip includes a body, a band integral with the body, and a clip that is attached to the body. The body has a vertical plate with a band insertion hole and a horizontal plate with a clip attachment hole. The band extends from the vertical plate. Locking holes penetrate the band at intervals. The clip includes a shaft that is fit into the clip attachment hole of the body, a wing on one end of the shaft, a band locking claw at another end of the shaft, and a body locking claw on an intermediate portion of the shaft. The band is wrapped around a group of wires and inserted into the band insertion hole. The band locking claw of the clip is inserted into and locked to a band locking hole, and the body locking claw contacts the surface of the body.

摘要翻译： 带夹包括主体，与身体整体的带，以及附接到身体的夹子。 本体具有带有带插孔的垂直板和带有夹子安装孔的水平板。 带从垂直板延伸。 锁孔每隔一段时间穿透。 该夹子包括一个装配在主体的夹子附接孔中的轴，在轴的一端上的翼，在轴的另一端的带锁定爪，以及在轴的中间部分上的主体锁定爪。 带缠绕在一组电线上并插入带插入孔。 夹子的带锁定爪插入并锁定到带锁定孔，并且身体锁定爪接触身体的表面。