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    Wavelength-converting light-emitting devices
    1.
    发明授权
    Wavelength-converting light-emitting devices 有权
    波长转换发光器件

    公开(公告)号：US07196354B1

    公开(公告)日：2007-03-27

    申请号：US11238667

    申请日：2005-09-29

    申请人： Alexei A. Erchak ,  Michael Lim ,  Elefterios Lidorikis ,  Jo A. Venezia ,  Michael G. Brown ,  Robert F. Karlicek, Jr.

    发明人： Alexei A. Erchak ,  Michael Lim ,  Elefterios Lidorikis ,  Jo A. Venezia ,  Michael G. Brown ,  Robert F. Karlicek, Jr.

    IPC分类号： H01L27/15 ,  H01L21/00

    CPC分类号： H01L33/507 ,  H01L25/0753 ,  H01L33/644 ,  H01L33/648 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A light-emitting device is provided. The device may include a thermally conductive region in contact with a wavelength-converting region (e.g., a phosphor region). The thermally conductive region may aid in the extraction of heat resulting from light absorption in the wavelength-converting region, which, if excessive, may impair device operation. The presence of a thermally conductive region can enable devices including wavelength-converting regions to operate even at high power levels (e.g., light generated by the light-generating region and/or by the light-emitting device having a total power greater than 0.5 Watts) for long operating lifetimes (e.g., greater than 2,000 hours).

    摘要翻译： 提供了一种发光装置。 该器件可以包括与波长转换区域（例如，磷光体区域）接触的导热区域。 导热区域可以有助于提取由波长转换区域中的光吸收引起的热量，如果过量，可能会损害器件的工作。 导热区域的存在可以使包括波长转换区域在内的装置即使在高功率水平（例如，由发光区域产生的光和/或由整个功率大于0.5瓦特的发光装置）也能够运行 ），可延长使用寿命（如2,000小时以上）。

    Semiconductor device separation using a patterned laser projection
    9.
    发明授权
    Semiconductor device separation using a patterned laser projection 有权
    使用图案化激光投影的半导体器件分离

    公开(公告)号：US06413839B1

    公开(公告)日：2002-07-02

    申请号：US09178287

    申请日：1998-10-23

    申请人： Michael G. Brown ,  Ivan Eliashevich ,  Mark Gottfried ,  Robert F. Karlicek, Jr. ,  James E. Nering

    发明人： Michael G. Brown ,  Ivan Eliashevich ,  Mark Gottfried ,  Robert F. Karlicek, Jr. ,  James E. Nering

    IPC分类号： H01L2146

    CPC分类号： B23K26/0738 ,  B23K26/066 ,  B23K26/364 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  H01L21/3043 ,  H01L21/6836 ,  H01L21/78 ,  H01L33/0095 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2924/0002 ,  Y10S438/94 ,  H01L2924/00

    摘要： A method for separating a semiconductor wafer into several thousand devices or dies by laser ablation. Semiconductor wafers are initially pre-processed to create multiple devices, such as blue LEDs, on the wafers. The wafers are then mounted with tape coated with a generally high level adhesive. The mounted wafer is then placed on a vacuum chuck (which is itself positioned on a computer controlled positioning table) to hold it in place during the cutting process. The cutting surface is then covered with a protective layer to prevent contamination from the effluent resulting from the actual cutting process. A laser beam is generated and passed through optical elements and masks to create a pattern, such as a line or multiple lines. The patterned laser projection is directed at the wafer at a substantially normal angle and applied to the wafer until at least a partial cut is achieved through it. A mechanical separation process completes the separation when only a partial cut is achieved by the patterned laser projection. The dies are then transferred to a grip ring for further processing.

    摘要翻译： 通过激光烧蚀将半导体晶片分离成数千个器件或管芯的方法。 半导体晶片最初被预处理以在晶片上产生多个器件，例如蓝色LED。 然后将晶片安装在涂有一般高水平粘合剂的胶带上。 然后将安装的晶片放置在真空吸盘（其本身位于计算机控制的定位台上），以在切割过程中将其保持在适当位置。 然后用保护层覆盖切割表面，以防止来自实际切割过程的流出物的污染。 生成激光束并通过光学元件和掩模以产生图案，例如线或多条线。 图案化的激光投影以基本上正常的角度指向晶片，并施加到晶片，直到通过它至少实现部分切割。 当通过图案化的激光投影仅实现部分切割时，机械分离过程完成分离。 然后将模具转移到握环以进一步处理。