公开(公告)号：US08728937B2

公开(公告)日：2014-05-20

申请号：US12684214

申请日：2010-01-08

申请人： Andreas Ploessl ,  Stephan Kaiser ,  Volker Härle ,  Berthold Hahn

发明人： Andreas Ploessl ,  Stephan Kaiser ,  Volker Härle ,  Berthold Hahn

IPC分类号： H01L21/44

CPC分类号： H01L33/0079 ,  H01L21/78 ,  H01L23/3185 ,  H01L24/03 ,  H01L24/05 ,  H01L33/62 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01023 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/00014 ,  H01L2924/00

摘要： For semiconductor chips using thin film technology, an active layer sequence is applied to a growth substrate, on which a reflective electrically conductive contact material layer is then formed. The active layer sequence is patterned to form active layer stacks, and reflective electrically conductive contact material layer is patterned to be located on each active layer stack. Then, a flexible, electrically conductive foil is applied to the contact material layers as an auxiliary carrier layer, and the growth substrate is removed.

摘要翻译： 对于使用薄膜技术的半导体芯片，将有源层序列应用于生长衬底，然后在其上形成反射导电接触材料层。 有源层序列被图案化以形成有源层堆叠，并且反射导电接触材料层被图案化以位于每个有源层堆叠上。 然后，将柔性导电箔施加到作为辅助载体层的接触材料层，并除去生长衬底。

公开(公告)号：US07649266B2

公开(公告)日：2010-01-19

申请号：US11194941

申请日：2005-08-01

申请人： Andreas Ploessl ,  Stephan Kaiser ,  Volker Härle ,  Berthold Hahn

发明人： Andreas Ploessl ,  Stephan Kaiser ,  Volker Härle ,  Berthold Hahn

IPC分类号： H01L23/52

CPC分类号： H01L33/405 ,  H01L21/6835 ,  H01L21/78 ,  H01L23/3185 ,  H01L24/03 ,  H01L24/05 ,  H01L24/83 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/62 ,  H01L2221/6835 ,  H01L2221/68354 ,  H01L2221/68368 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/32014 ,  H01L2224/83801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01025 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/00014 ,  H01L2924/3512 ,  H01L2924/00

摘要： For semiconductor chips (1) using thin film technology, an active layer sequence (20) is applied to a growth substrate (3), on which a reflective electrically conductive contact material layer (40) is then formed. The active layer sequence is patterned to form active layer stacks (2), and reflective electrically conductive contact material layer (40) is patterned to be located on each active layer stack (2). Then, a flexible, electrically conductive foil (6) is applied to the contact material layers as an auxiliary carrier layer, and the growth substrate is removed.

摘要翻译： 对于使用薄膜技术的半导体芯片（1），将有源层序列（20）施加到生长衬底（3）上，然后在其上形成反射导电接触材料层（40）。 有源层序列被图案化以形成有源层堆叠（2），并且反射导电接触材料层（40）被图案化以位于每个有源层堆叠（2）上。 然后，将柔性导电箔（6）施加到作为辅助载体层的接触材料层，并除去生长衬底。

公开(公告)号：US07588998B2

公开(公告)日：2009-09-15

申请号：US10503042

申请日：2003-01-30

申请人： Michael Fehrer ,  Berthold Hahn ,  Volker Härle ,  Stephan Kaiser ,  Frank Otte ,  Andreas Plössl

发明人： Michael Fehrer ,  Berthold Hahn ,  Volker Härle ,  Stephan Kaiser ,  Frank Otte ,  Andreas Plössl

IPC分类号： H01L21/30

CPC分类号： H01L21/76251 ,  B23K26/40 ,  B23K26/50 ,  B23K2103/172 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  H01L21/2007 ,  H01L24/29 ,  H01L24/83 ,  H01L33/0079 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/29298 ,  H01L2224/83001 ,  H01L2224/8319 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/0106 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/157 ,  H01L2924/15763 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01046 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929

摘要： A method for producing a semiconductor component, in particular a thin-film component, a semiconductor layer being separated from a substrate by irradiation with a laser beam having a plateaulike spatial beam profile. Furthermore, the semiconductor layer, prior to separation, is applied to a carrier with an adapted thermal expansion coefficient. The method is suitable in particular for semiconductor layers containing a nitride compound semiconductor.

摘要翻译： 一种用于制造半导体部件的方法，特别是薄膜部件，通过用具有平板空间光束轮廓的激光束照射与基板分离的半导体层。 此外，半导体层在分离之前被施加到具有适应的热膨胀系数的载体上。 该方法特别适用于含有氮化物半导体的半导体层。

公开(公告)号：US08273593B2

公开(公告)日：2012-09-25

申请号：US13027810

申请日：2011-02-15

申请人： Berthold Hahn ,  Stephan Kaiser ,  Volker Härle

发明人： Berthold Hahn ,  Stephan Kaiser ,  Volker Härle

IPC分类号： H01L21/66 ,  H01L21/30

CPC分类号： H01L33/22 ,  H01L33/0079

摘要： A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip, wherein the semiconductor layer sequence is grown on a substrate, a mirror layer is formed or applied on the semiconductor layer sequence, which reflects back into the semiconductor layer sequence at least part of a radiation that is generated in the semiconductor layer sequence during the operation thereof and is directed toward the mirror layer, the semiconductor layer sequence is separated from the substrate, and a separation surface of the semiconductor layer sequence, from which the substrate is separated, is etched by an etchant which predominantly etches at crystal defects and selectively etches different crystal facets at the separation surface.

摘要翻译： 一种用于对薄膜发​​光二极管芯片的半导体层序列的辐射发射表面进行微图形化的方法，其中在衬底上生长半导体层序列，在半导体层序列上形成或施加镜面层， 在半导体层序列中在半导体层序列中产生的至少一部分辐射反射回半导体层序列并且朝向镜面层，半导体层序列与衬底分离，并且半导体层的分离表面 衬底分离的层序列被蚀刻剂蚀刻，蚀刻剂主要在晶体缺陷处蚀刻并选择性地蚀刻分离表面处的不同晶面。

公开(公告)号：US20110140141A1

公开(公告)日：2011-06-16

申请号：US13027810

申请日：2011-02-15

申请人： Berthold HAHN ,  Stephan Kaiser ,  Volker Härle

发明人： Berthold HAHN ,  Stephan Kaiser ,  Volker Härle

IPC分类号： H01L33/60 ,  H01L33/40

CPC分类号： H01L33/22 ,  H01L33/0079

摘要： A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip, wherein the semiconductor layer sequence is grown on a substrate, a mirror layer is formed or applied on the semiconductor layer sequence, which reflects back into the semiconductor layer sequence at least part of a radiation that is generated in the semiconductor layer sequence during the operation thereof and is directed toward the mirror layer, the semiconductor layer sequence is separated from the substrate, and a separation surface of the semiconductor layer sequence, from which the substrate is separated, is etched by an etchant which predominantly etches at crystal defects and selectively etches different crystal facets at the separation surface.

摘要翻译： 一种用于对薄膜发​​光二极管芯片的半导体层序列的辐射发射表面进行微图形化的方法，其中在衬底上生长半导体层序列，在半导体层序列上形成或施加镜面层， 在半导体层序列中在半导体层序列中产生的至少一部分辐射反射回半导体层序列并且朝向镜面层，半导体层序列与衬底分离，并且半导体层的分离表面 衬底分离的层序列被蚀刻剂蚀刻，蚀刻剂主要在晶体缺陷处蚀刻并选择性地蚀刻分离表面处的不同晶面。

公开(公告)号：US07897423B2

公开(公告)日：2011-03-01

申请号：US11579194

申请日：2004-04-29

申请人： Berthold Hahn ,  Stephan Kaiser ,  Volker Härle

发明人： Berthold Hahn ,  Stephan Kaiser ,  Volker Härle

IPC分类号： H01L21/00 ,  H01L21/46

CPC分类号： H01L33/22 ,  H01L33/0079

摘要： A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip. The semiconductor layer sequence is grown on a substrate. A mirror layer is formed or applied on the semiconductor layer sequence, which reflects back into the semiconductor layer sequence at least part of a radiation that is generated in the semiconductor layer sequence during the operation thereof and is directed toward the mirror layer. The semiconductor layer sequence is separated from the substrate by means of a lift-off method, in which a separation zone in the semiconductor layer sequence is at least partly decomposed in such a way that anisotropic residues of a constituent of the separation zone, in particular a metallic constituent of the separation layer, remain at the separation surface of the semiconductor layer sequence, from which the substrate is separated. The separation surface—provided with the residues—of the semiconductor layer sequence with a dry etching method, a gaseous etchant or a wet-chemical etchant, wherein the anisotropic residues are at least temporarily used as an etching mask. A semiconductor chip is produced according to such a method.

摘要翻译： 一种用于对薄膜发​​光二极管芯片的半导体层序列的辐射发射表面进行微图形化的方法。 半导体层序列在衬底上生长。 在半导体层序列上形成或施加镜层，其反射回到半导体层序列中，半导体层序列在其操作期间在半导体层序列中产生的辐射的至少一部分并且被指向镜层。 通过剥离方法将半导体层序列与衬底分离，其中半导体层序列中的分离区域至少部分地被分解，使得分离区的成分的各向异性残留物 分离层的金属成分保留在半导体层序列的分离表面，基板从该分离表面分离。 具有干蚀刻方法的半导体层序列的残留物的分离表面，气体蚀刻剂或湿化学蚀刻剂，其中各向异性残余物至少暂时用作蚀刻掩模。 根据这种方法制造半导体芯片。

公开(公告)号：US08598014B2

公开(公告)日：2013-12-03

申请号：US13281598

申请日：2011-10-26

申请人： Michael Fehrer ,  Berthold Hahn ,  Volker Härle ,  Stephan Kaiser ,  Frank Otte ,  Andreas Plössl

发明人： Michael Fehrer ,  Berthold Hahn ,  Volker Härle ,  Stephan Kaiser ,  Frank Otte ,  Andreas Plössl

IPC分类号： H01L21/26

CPC分类号： H01L21/76251 ,  B23K26/40 ,  B23K26/50 ,  B23K2103/172 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  H01L21/2007 ,  H01L24/29 ,  H01L24/83 ,  H01L33/0079 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/29298 ,  H01L2224/83001 ,  H01L2224/8319 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/0106 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/157 ,  H01L2924/15763 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01046 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929

摘要： Presented is a method for producing an optoelectronic component. The method includes separating a semiconductor layer based on a III-V-compound semiconductor material from a substrate by irradiation with a laser beam having a plateau-like spatial beam profile, where individual regions of the semiconductor layer are irradiated successively.

摘要翻译： 提出了一种用于制造光电子部件的方法。 该方法包括通过用具有平台状空间光束轮廓的激光束照射从衬底分离基于III-V-化合物半导体材料的半导体层，其中半导体层的各个区域被连续照射。

公开(公告)号：US08575003B2

公开(公告)日：2013-11-05

申请号：US12583500

申请日：2009-08-21

申请人： Michael Fehrer ,  Berthold Hahn ,  Volker Härle ,  Stephan Kaiser ,  Frank Otte ,  Andreas Plössl

发明人： Michael Fehrer ,  Berthold Hahn ,  Volker Härle ,  Stephan Kaiser ,  Frank Otte ,  Andreas Plössl

IPC分类号： H01L21/26

CPC分类号： H01L21/76251 ,  B23K26/40 ,  B23K26/50 ,  B23K2103/172 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  H01L21/2007 ,  H01L24/29 ,  H01L24/83 ,  H01L33/0079 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/29298 ,  H01L2224/83001 ,  H01L2224/8319 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/0106 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/157 ,  H01L2924/15763 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01046 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929

摘要： Presented is a method for producing an optoelectronic component. The method includes separating a semiconductor layer based on a III-V-compound semiconductor material from a substrate by irradiation with a laser beam having a plateau-like spatial beam profile, where individual regions of the semiconductor layer are irradiated successively.

公开(公告)号：US08524573B2

公开(公告)日：2013-09-03

申请号：US10544306

申请日：2004-01-27

申请人： Stephan Kaiser ,  Volker Härle ,  Berthold Hahn

发明人： Stephan Kaiser ,  Volker Härle ,  Berthold Hahn

IPC分类号： H01L21/428

CPC分类号： H01L21/268 ,  H01L21/7806 ,  H01L33/0079 ,  H01L2224/83001

摘要： A method for producing a semiconductor component, in which a semiconductor layer is separated from a substrate by irradiation with laser pulses, the pulse duration of the laser pulses being less than or equal to 10 ns. The laser pulses have a spatial beam profile with a flank slope is chosen to be gentle enough to prevent cracks in the semiconductor layer that arise as a result of thermally induced lateral stresses during the separation of semiconductor layer and substrate.

摘要翻译： 一种半导体元件的制造方法，其中通过激光脉冲照射半导体层与衬底分离，激光脉冲的脉冲持续时间小于或等于10ns。 激光脉冲具有空间光束轮廓，其侧面斜率被选择为足够温和以防止在半导体层和衬底的分离期间由于热诱导的横向应力引起的半导体层中的裂纹。

公开(公告)号：US07242025B2

公开(公告)日：2007-07-10

申请号：US10356109

申请日：2003-01-31

申请人： Dominik Eisert ,  Stephan Kaiser ,  Michael Fehrer ,  Berthold Hahn ,  Volker Härle

发明人： Dominik Eisert ,  Stephan Kaiser ,  Michael Fehrer ,  Berthold Hahn ,  Volker Härle

IPC分类号： H01L27/15 ,  H01L33/00 ,  H01L23/48 ,  H01L51/10 ,  H01S5/183

CPC分类号： H01L33/387 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/12041 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

摘要： A radiation-emitting semiconductor component has a semiconductor body containing a nitride compound semiconductor, and a contact metallization layer disposed on a surface of the semiconductor body. In this case, the contact metallization layer is covered with a radiation-transmissive, electrically conductive contact layer. The radiation generated is coupled out through the contact metallization layer or through openings in the contact metallization layer.

摘要翻译： 辐射发射半导体部件具有包含氮化物化合物半导体的半导体主体和设置在半导体本体的表面上的接触金属化层。 在这种情况下，接触金属化层被辐射透射的导电接触层覆盖。 产生的辐射通过接触金属化层或通过接触金属化层中的开口耦合出来。