公开(公告)号：US20130297321A1

公开(公告)日：2013-11-07

申请号：US13801441

申请日：2013-03-13

申请人： Antoine Raux ,  Rakesh Gupta ,  Deepak Ramachandran ,  Yi Ma

发明人： Antoine Raux ,  Rakesh Gupta ,  Deepak Ramachandran ,  Yi Ma

IPC分类号： G01C21/26

CPC分类号： G01C21/26 ,  G01C21/3608 ,  G01C21/3644

摘要： An utterance is received from a user specifying a location attribute and a landmark. A set of candidate locations is identified based on the specified location attribute, and a confidence score can be determined for each candidate location. A set of landmarks is identified based on the specified landmark, and confidence scores can be determined for the landmarks. An associated kernel model is generated for each landmark. Each kernel model is centered at the location of the associated landmark on a map, and the amplitude of the kernel model can be based on landmark attributes, landmark confidence scores, characteristics of the user, and the like. The candidate locations are ranked based on the amplitudes of overlapping kernel models at the candidate locations, and can also be ranked based on confidence scores associated with the candidate locations. A candidate location is selected and presented to the user based on the candidate location ranking

摘要翻译： 从指定位置属性和地标的用户接收到话语。 基于指定的位置属性来识别一组候选位置，并且可以为每个候选位置确定可信度得分。 基于指定的地标识别一组地标，并且可以为地标确定置信度得分。 为每个地标生成相关的内核模型。 每个核心模型集中在地图上相关联的地标的位置，并且内核模型的幅度可以基于地标属性，地标置信度得分，用户特征等。 候选位置基于候选位置处的重叠核心模型的幅度进行排序，并且还可以基于与候选位置相关联的置信度得分进行排名。 基于候选位置排名，选择候选位置并呈现给用户

公开(公告)号：US09127950B2

公开(公告)日：2015-09-08

申请号：US13801441

申请日：2013-03-13

申请人： Antoine Raux ,  Rakesh Gupta ,  Deepak Ramachandran ,  Yi Ma

发明人： Antoine Raux ,  Rakesh Gupta ,  Deepak Ramachandran ,  Yi Ma

IPC分类号： G01C21/26 ,  G01C21/36

CPC分类号： G01C21/26 ,  G01C21/3608 ,  G01C21/3644

摘要： An utterance is received from a user specifying a location attribute and a landmark. A set of candidate locations is identified based on the specified location attribute, and a confidence score can be determined for each candidate location. A set of landmarks is identified based on the specified landmark, and confidence scores can be determined for the landmarks. An associated kernel model is generated for each landmark. Each kernel model is centered at the location of the associated landmark on a map, and the amplitude of the kernel model can be based on landmark attributes, landmark confidence scores, characteristics of the user, and the like. The candidate locations are ranked based on the amplitudes of overlapping kernel models at the candidate locations, and can also be ranked based on confidence scores associated with the candidate locations. A candidate location is selected and presented to the user based on the candidate location ranking.

摘要翻译： 从指定位置属性和地标的用户接收到话语。 基于指定的位置属性来识别一组候选位置，并且可以为每个候选位置确定可信度得分。 基于指定的地标识别一组地标，并且可以为地标确定置信度得分。 为每个地标生成相关的内核模型。 每个核心模型集中在地图上相关联的地标的位置，并且内核模型的幅度可以基于地标属性，地标置信度得分，用户特征等。 候选位置基于候选位置处的重叠核心模型的幅度进行排序，并且还可以基于与候选位置相关联的置信度得分进行排名。 候选位置被选择并且基于候选位置排名呈现给用户。

公开(公告)号：US08818132B2

公开(公告)日：2014-08-26

申请号：US13310729

申请日：2011-12-03

申请人： Zhengdong Zhang ,  Yasuyuki Matsushita ,  Yi Ma

发明人： Zhengdong Zhang ,  Yasuyuki Matsushita ,  Yi Ma

IPC分类号： G06K9/36 ,  G06T7/00

CPC分类号： G06T7/0018 ,  G06T7/80 ,  G06T2207/20104 ,  H04N17/002

摘要： A “Camera Calibrator” provides various techniques for recovering intrinsic camera parameters and distortion characteristics by processing a set of one or more input images. These techniques are based on extracting “Transform Invariant Low-Rank Textures” (TILT) from input images using high-dimensional convex optimization tools for matrix rank minimization and sparse signal recovery. The Camera Calibrator provides a simple, accurate, and flexible method to calibrate intrinsic parameters of a camera even with significant lens distortion, noise, errors, partial occlusions, illumination and viewpoint change, etc. Distortions caused by the camera can then be automatically corrected or removed from images. Calibration is achieved under a wide range of practical scenarios, including using multiple images of a known pattern, multiple images of an unknown pattern, single or multiple images of multiple patterns, etc. Significantly, calibration is achieved without extracting or manually identifying low-level features such as corners or edges from the calibration images.

摘要翻译： “相机校准器”提供了通过处理一组一个或多个输入图像来恢复本征相机参数和失真特性的各种技术。 这些技术基于使用用于矩阵秩最小化和稀疏信号恢复的高维凸优化工具从输入图像中提取“变换不变低阶纹理”（TILT）。 相机校准器提供了一种简单，准确和灵活的校准相机内在参数的方法，即使有明显的镜头失真，噪点，错误，部分遮挡，照明和视点更改等。然后可以自动更正相机造成的失真或 从图像中删除 在广泛的实际情况下实现校准，包括使用已知图案的多个图像，未知图案的多个图像，多个图案的单个或多个图像等。显着地，在不提取或手动识别低级别的情况下实现校准 特征如校准图像的拐角或边缘。

公开(公告)号：US08426839B1

公开(公告)日：2013-04-23

申请号：US12767552

申请日：2010-04-26

申请人： Yi Ma ,  Chakravarthy Gopalan ,  Antonio R. Gallo ,  Janet Wang

发明人： Yi Ma ,  Chakravarthy Gopalan ,  Antonio R. Gallo ,  Janet Wang

IPC分类号： H01L45/00 ,  H01L29/04 ,  H01L29/12

CPC分类号： H01L45/085 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/142 ,  H01L45/1608 ,  H01L45/165 ,  H01L45/1658 ,  H01L45/1675 ,  H01L45/1683

摘要： A conductive bridging memory cell may include an ion conductor layer formed over an active electrode that is a source of conductive ions for the ion conductor; a conductive layer; and a barrier layer formed below the active layer and in contact with the conductive, the barrier layer substantially preventing a movement of conductive ions therethrough.

摘要翻译： 导电桥接存储单元可以包括在作为离子导体的导电离子源的有源电极上形成的离子导体层; 导电层; 以及形成在有源层下方并与导体接触的阻挡层，阻挡层基本上防止导电离子通过其移动。

公开(公告)号：US07871942B2

公开(公告)日：2011-01-18

申请号：US12057113

申请日：2008-03-27

申请人： Shreyas S. Kher ,  Pravin K. Narwankar ,  Khaled Z. Ahmed ,  Yi Ma

发明人： Shreyas S. Kher ,  Pravin K. Narwankar ,  Khaled Z. Ahmed ,  Yi Ma

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/31645 ,  C23C14/083 ,  C23C16/56 ,  H01L21/3141

摘要： Processes for making a high K (dielectric constant) film using an ultra-high purity hafnium containing organometallic compound are disclosed. Also described are devices incorporating high K films made with high purity hafnium containing organometallic compounds.

摘要翻译： 公开了使用含有超高纯度铪的有机金属化合物制造高K（介电常数）膜的方法。 还描述了包含用高纯度铪含有有机金属化合物制成的高K膜的装置。

公开(公告)号：US07659158B2

公开(公告)日：2010-02-09

申请号：US12059782

申请日：2008-03-31

申请人： Yi Ma ,  Shreyas S. Kher ,  Khaled Ahmed ,  Tejal Goyani ,  Maitreyee Mahajani ,  Jallepally Ravi ,  Yi-Chiau Huang

发明人： Yi Ma ,  Shreyas S. Kher ,  Khaled Ahmed ,  Tejal Goyani ,  Maitreyee Mahajani ,  Jallepally Ravi ,  Yi-Chiau Huang

IPC分类号： H01L21/8238 ,  H01L29/788

CPC分类号： H01L29/42324 ,  H01L21/28273 ,  H01L29/7881

摘要： Embodiments of the invention provide memory devices and methods for forming memory devices. In one embodiment, a memory device is provided which includes a floating gate polysilicon layer disposed over source/drain regions of a substrate, a silicon oxynitride layer disposed over the floating gate polysilicon layer, a first aluminum oxide layer disposed over the silicon oxynitride layer, a hafnium silicon oxynitride layer disposed over the first aluminum oxide layer, a second aluminum oxide layer disposed over the hafnium silicon oxynitride layer, and a control gate polysilicon layer disposed over the second aluminum oxide layer. In another embodiment, a memory device is provided which includes a control gate polysilicon layer disposed over an inter-poly dielectric stack disposed over a silicon oxide layer disposed over the floating gate polysilicon layer. The inter-poly dielectric stack contains two silicon oxynitride layers separated by a silicon nitride layer.

摘要翻译： 本发明的实施例提供了用于形成存储器件的存储器件和方法。 在一个实施例中，提供了一种存储器件，其包括设置在衬底的源极/漏极区域上的浮置栅极多晶硅层，设置在浮置栅极多晶硅层上的氧氮化硅层，设置在氧氮化硅层上的第一氧化铝层， 设置在所述第一氧化铝层上的铪硅氮化物层，设置在所述铪硅氮氧化物层上的第二氧化铝层，以及设置在所述第二氧化铝层上的控制栅极多晶硅层。 在另一个实施例中，提供了一种存储器件，其包括设置在布置在浮置多晶硅层上方的氧化硅层上的多晶硅介质叠层之间的控制栅极多晶硅层。 多晶硅间介质堆叠包含由氮化硅层分隔的两个氮氧化硅层。

公开(公告)号：US07602067B2

公开(公告)日：2009-10-13

申请号：US11957787

申请日：2007-12-17

申请人： Yi Ma ,  Robert Ogle

发明人： Yi Ma ,  Robert Ogle

IPC分类号： H01L29/40

CPC分类号： H01L21/28282 ,  H01L27/115 ,  H01L27/11568 ,  H01L29/42348 ,  H01L29/7923

摘要： Charge storage stacks containing hetero-structure variable silicon richness nitride for memory cells and methods for making the charge storage stacks are provided. The charge storage stack can contain a first insulating layer on a semiconductor substrate; n charge storage layers comprising silicon-rich silicon nitride on the first insulating layer, wherein numbers of the charge storage layers increase from the bottom to the top and a k-value of an n−1th charge storage layer is higher than a k-value of an nth charge storage layer; n−1 dielectric layers comprising substantially stoichiometric silicon nitride between each of the n charge storage layers; and a second insulating layer on the nth charge storage layers.

摘要翻译： 提供了包含用于存储单元的异质结构可变富硅氮化物的电荷存储堆，以及用于制造电荷存储堆的方法。 电荷存储堆可以包含半导体衬底上的第一绝缘层; n在第一绝缘层上形成包括富硅氮化物的存储层，其中电荷存储层的数量从底部增加到顶部，并且第n-1个电荷存储层的k值高于k值 的第n电荷存储层; n-1个电介质层，其在n个电荷存储层中的每一个之间包含基本上化学计量的氮化硅; 以及第n电荷存储层上的第二绝缘层。

公开(公告)号：US20090065816A1

公开(公告)日：2009-03-12

申请号：US12206390

申请日：2008-09-08

申请人： KEVIN L. CUNNINGHAM ,  Yi Ma ,  Majeed A. Foad

发明人： KEVIN L. CUNNINGHAM ,  Yi Ma ,  Majeed A. Foad

IPC分类号： H01L21/20 ,  H01L29/04 ,  H01L29/78

CPC分类号： H01L29/7833 ,  C23C16/24 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/32155 ,  H01L29/6659 ,  H01L29/7845

摘要： In certain embodiments a method of forming a multi-layer silicon film is provided. A substrate is placed in a process chamber. An amorphous silicon film is formed on the substrate by flowing into the process chamber a first process gas comprising a silicon source gas. A polysilicon film is formed on the amorphous silicon film by flowing into the deposition chamber a first process gas mix comprising a silicon source gas and a first dilution gas mix comprising H2 and an inert gas at a first temperature. In certain embodiments, the polysilicon film has a crystal orientation which is dominated by the direction. In certain embodiments, the polysilicon film has a crystal orientation dominated by the orientation. Structures comprising a lower amorphous silicon film and an upper polysilicon film having a random grain structure or a columnar grain structure are provided as well.

摘要翻译： 在某些实施方案中，提供了形成多层硅膜的方法。 将基板放置在处理室中。 通过在处理室中流入包括硅源气体的第一工艺气体，在衬底上形成非晶硅膜。 通过在第一温度下流入沉积室中，形成包含硅源气体和包含H 2和惰性气体的第一稀释气体混合物的第一工艺气体混合物，在非晶硅膜上形成多晶硅膜。 在某些实施例中，多晶硅膜具有由<220>方向支配的晶体取向。 在某些实施方案中，多晶硅膜具有以<111>取向为主的晶体取向。 还提供了包括下部非晶硅膜和具有随机晶粒结构或柱状晶粒结构的上部多晶硅膜的结构。

公开(公告)号：US20070049043A1

公开(公告)日：2007-03-01

申请号：US11209472

申请日：2005-08-23

申请人： Shankar Muthukrishnan ,  Rahul Sharangpani ,  Tejal Goyani ,  Pravin Narwankar ,  Shreyas Kher ,  Yi Ma ,  Giuseppina Conti

发明人： Shankar Muthukrishnan ,  Rahul Sharangpani ,  Tejal Goyani ,  Pravin Narwankar ,  Shreyas Kher ,  Yi Ma ,  Giuseppina Conti

IPC分类号： H01L21/31

CPC分类号： H01L21/0234 ,  H01L21/02329 ,  H01L21/28202 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/31645 ,  H01L29/517

摘要： A method and apparatus for forming a nitrided gate dielectric. The method comprises incorporating nitrogen into a dielectric film using a plasma nitridation process to form a nitrided gate dielectric. The first step involves providing a substrate comprising a gate dielectric film. The second step involves inducing a voltage on the substrate. Finally, the substrate is exposed to a plasma comprising a nitrogen source while maintaining the voltage to form a nitrided gate dielectric on the substrate. In one embodiment, the voltage is induced on the substrate by applying a voltage to an electrostatic chuck supporting the substrate. In another embodiment, the voltage is induced on the substrate by applying a DC bias voltage to an electrode positioned adjacent the substrate.

摘要翻译： 一种用于形成氮化栅极电介质的方法和装置。 该方法包括使用等离子体氮化工艺将氮合并到电介质膜中以形成氮化栅极电介质。 第一步涉及提供包括栅介质膜的衬底。 第二步涉及在衬底上感应电压。 最后，将衬底暴露于包含氮源的等离子体，同时保持电压以在衬底上形成氮化栅电介质。 在一个实施例中，通过向支撑衬底的静电卡盘施加电压来在衬底上感应电压。 在另一个实施例中，通过对邻近衬底定位的电极施加DC偏置电压来在衬底上感应出电压。

公开(公告)号：US06940151B2

公开(公告)日：2005-09-06

申请号：US10261463

申请日：2002-09-30

申请人： Michael Scott Carroll ,  Yi Ma ,  Minesh Amrat Patel ,  Peyman Sana

发明人： Michael Scott Carroll ,  Yi Ma ,  Minesh Amrat Patel ,  Peyman Sana

IPC分类号： H01L21/331 ,  H01L21/28 ,  H01L21/318 ,  H01L21/324 ,  H01L21/336 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/8244 ,  H01L21/8249 ,  H01L27/06 ,  H01L27/088 ,  H01L27/11 ,  H01L29/51 ,  H01L29/732 ,  H01L29/737 ,  H01L29/78 ,  H01L31/0392

CPC分类号： H01L29/518 ,  H01L21/324 ,  H01L21/823864 ,  H01L21/8249 ,  H01L29/6656 ,  H01L29/6659

摘要： A low-thermal budget, silicon-rich silicon nitride film may include a concentration of hydrogen in Si—H bonds being at least 1.5 times as great as a concentration of hydrogen in N—H bonds. The silicon nitride film suppresses boron diffusion in boron-doped devices when such devices are processed using high-temperature processing operations that conventionally urge boron diffusion. The low-thermal budget, silicon-rich silicon nitride film may be used to form spacers in CMOS devices, it may be used as part of a dielectric stack to prevent shorting in tightly packed SRAM arrays, and it may be used in BiCMOS processing to form a base nitride layer and/or nitride spacers isolating the base from the emitter. Furthermore the low-thermal budget, silicon-rich silicon nitride film may remain covering the CMOS structure while bipolar devices are being formed, as it suppresses the boron diffusion that results in boron penetration and boron-doped poly depletion.

摘要翻译： 低热预算，富含硅的氮化硅膜可能包括Si-H键中的氢浓度至少为N-H键中氢的浓度的1.5倍。 当使用通常促进硼扩散的高温处理操作来处理这种器件时，氮化硅膜抑制硼掺杂器件中的硼扩散。 低热量预算，富含硅的氮化硅膜可用于在CMOS器件中形成间隔物，其可用作电介质堆叠的一部分，以防止紧密堆积的SRAM阵列中的短路，并且可用于BiCMOS处理 形成将基极与发射极隔离的基底氮化物层和/或氮化物间隔物。 此外，低热量预算，富硅的氮化硅膜可能保持覆盖CMOS结构，同时双极器件正在形成，因为它抑制了硼扩散，导致硼渗透和硼掺杂的多晶硅耗尽。