公开(公告)号：US20190103435A1

公开(公告)日：2019-04-04

申请号：US16207622

申请日：2018-12-03

申请人： Artilux Corporation

发明人： Yun-Chung Na ,  Szu-Lin Cheng ,  Shu-Lu Chen ,  Han-Din Liu ,  Hui-Wen Chen ,  Che-Fu Liang

IPC分类号： H01L27/146 ,  H01L27/144 ,  H01L31/028 ,  H02S40/44 ,  H01L31/103 ,  H01L31/105 ,  H01L31/101 ,  H01L31/0352

摘要： An optical sensor including a semiconductor substrate; a first light absorption region formed in the semiconductor substrate, the first light absorption region configured to absorb photons at a first wavelength range and to generate photo-carriers from the absorbed photons; a second light absorption region formed on the first light absorption region, the second light absorption region configured to absorb photons at a second wavelength range and to generate photo-carriers from the absorbed photons; and a sensor control signal coupled to the second light absorption region, the sensor control signal configured to provide at least a first control level and a second control level.

公开(公告)号：US10157954B2

公开(公告)日：2018-12-18

申请号：US15803591

申请日：2017-11-03

申请人： Artilux Corporation

发明人： Yun-Chung Na ,  Szu-Lin Cheng ,  Shu-Lu Chen ,  Han-Din Liu ,  Hui-Wen Chen ,  Che-Fu Liang

IPC分类号： H01L27/146 ,  H01L27/144 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/103 ,  H01L31/105 ,  H02S40/44

摘要： An optical sensor including a semiconductor substrate; a first light absorption region formed in the semiconductor substrate, the first light absorption region configured to absorb photons at a first wavelength range and to generate photo-carriers from the absorbed photons; a second light absorption region formed on the first light absorption region, the second light absorption region configured to absorb photons at a second wavelength range and to generate photo-carriers from the absorbed photons; and a sensor control signal coupled to the second light absorption region, the sensor control signal configured to provide at least a first control level and a second control level.

公开(公告)号：US10056415B2

公开(公告)日：2018-08-21

申请号：US15713251

申请日：2017-09-22

申请人： Artilux Corporation

发明人： Yun-Chung Na ,  Szu-Lin Cheng ,  Shu-Lu Chen ,  Han-Din Liu ,  Hui-Wen Chen ,  Che-Fu Liang

IPC分类号： H01L27/146 ,  H01L31/0312 ,  H01L31/09 ,  H01L31/18 ,  H01L31/0232

CPC分类号： H01L27/14605 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14649 ,  H01L27/1465 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/1469 ,  H01L27/14698 ,  H01L31/02327 ,  H01L31/0312 ,  H01L31/09 ,  H01L31/105 ,  H01L31/1812 ,  H01L31/1876 ,  H01L31/1892

摘要： A method for fabricating an image sensor array having a first group of photodiodes for detecting light at visible wavelengths a second group of photodiodes for detecting light at infrared or near-infrared wavelengths, the method including forming a germanium-silicon layer for the second group of photodiodes on a first semiconductor donor wafer; defining a first interconnect layer on the germanium-silicon layer; defining integrated circuitry for controlling pixels of the image sensor array on a semiconductor carrier wafer; defining a second interconnect layer on the semiconductor carrier wafer; bonding the first interconnect layer with the second interconnect layer; defining the pixels of an image sensor array on a second semiconductor donor wafer; defining a third interconnect layer on the image sensor array; and bonding the third interconnect layer with the germanium-silicon layer.

公开(公告)号：US20180175084A1

公开(公告)日：2018-06-21

申请号：US15895932

申请日：2018-02-13

申请人： Artilux Corporation

发明人： Yun-Chung Na ,  Szu-Lin Cheng ,  Shu-Lu Chen ,  Han-Din Liu ,  Hui-Wen Chen ,  Che-Fu Liang

IPC分类号： H01L27/146 ,  H01L31/18 ,  H01L31/09 ,  H01L31/0312 ,  H01L31/0232

CPC分类号： H01L27/14605 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14649 ,  H01L27/1465 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/1469 ,  H01L27/14698 ,  H01L31/02327 ,  H01L31/0312 ,  H01L31/09 ,  H01L31/1812 ,  H01L31/1876 ,  H01L31/1892

摘要： A method for fabricating an image sensor array having a first group of photodiodes for detecting light at visible wavelengths a second group of photodiodes for detecting light at infrared or near-infrared wavelengths, the method including forming a germanium-silicon layer for the second group of photodiodes on a first semiconductor donor wafer; defining a first interconnect layer on the germanium-silicon layer; defining integrated circuitry for controlling pixels of the image sensor array on a semiconductor carrier wafer; defining a second interconnect layer on the semiconductor carrier wafer; bonding the first interconnect layer with the second interconnect layer; defining the pixels of an image sensor array on a second semiconductor donor wafer; defining a third interconnect layer on the image sensor array; and bonding the third interconnect layer with the germanium-silicon layer.

公开(公告)号：US20180166588A1

公开(公告)日：2018-06-14

申请号：US15882953

申请日：2018-01-29

申请人： Artilux Corporation

发明人： Szu-Lin Cheng ,  Shu-Lu Chen

IPC分类号： H01L31/02 ,  H01L31/18 ,  H01L21/70 ,  H01L31/105 ,  H01L31/0352 ,  H01L31/028 ,  H01L31/0232 ,  H01L31/0224 ,  H01L31/0216 ,  H01L29/78 ,  H01L29/06 ,  H01L27/144 ,  H01L23/532 ,  H01L23/522 ,  H01L21/8234 ,  H01L21/77

CPC分类号： H01L31/02019 ,  H01L21/70 ,  H01L21/77 ,  H01L21/823475 ,  H01L23/5226 ,  H01L23/53271 ,  H01L27/1443 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14687 ,  H01L27/14689 ,  H01L29/0657 ,  H01L29/78 ,  H01L31/02005 ,  H01L31/02161 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/105 ,  H01L31/18 ,  H01L31/1808 ,  H01L31/1868 ,  H01L31/1876

摘要： Examples of the various techniques introduced here include, but not limited to, a mesa height adjustment approach during shallow trench isolation formation, a transistor via first approach, and a multiple absorption layer approach. As described further below, the techniques introduced herein include a variety of aspects that can individually and/or collectively resolve or mitigate one or more traditional limitations involved with manufacturing PDs and transistors on the same substrate, such as above discussed reliability, performance, and process temperature issues.

公开(公告)号：US09991411B2

公开(公告)日：2018-06-05

申请号：US15626969

申请日：2017-06-19

申请人： Artilux Corporation

发明人： Szu-Lin Cheng ,  Han-Din Liu ,  Shu-Lu Chen ,  Yun-Chung Na ,  Hui-Wen Chen

IPC分类号： H01L31/0232 ,  H01L31/18 ,  H01L31/028

CPC分类号： H01L31/1812 ,  H01L27/14629 ,  H01L27/14634 ,  H01L27/1469 ,  H01L31/02005 ,  H01L31/02161 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/0549 ,  H01L31/107 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/547

摘要： Structures and techniques introduced here enable the design and fabrication of photodetectors (PDs) and/or other electronic circuits using typical semiconductor device manufacturing technologies meanwhile reducing the adverse impacts on PDs' performance. Examples of the various structures and techniques introduced here include, but not limited to, a pre-PD homogeneous wafer bonding technique, a pre-PD heterogeneous wafer bonding technique, a post-PD wafer bonding technique, their combinations, and a number of mirror equipped PD structures. With the introduced structures and techniques, it is possible to implement PDs using typical direct growth material epitaxy technology while reducing the adverse impact of the defect layer at the material interface caused by lattice mismatch.

公开(公告)号：US20180012917A1

公开(公告)日：2018-01-11

申请号：US15712852

申请日：2017-09-22

申请人： Artilux Corporation

发明人： Yun-Chung Na ,  Szu-Lin Cheng ,  Shu-Lu Chen ,  Han-Din Liu ,  Hui-Wen Chen ,  Che-Fu Liang

IPC分类号： H01L27/146 ,  H01L31/0232 ,  H01L31/0312 ,  H01L31/18 ,  H01L31/09

摘要： A method for fabricating an image sensor array having a first group of photodiodes for detecting light at visible wavelengths a second group of photodiodes for detecting light at infrared or near-infrared wavelengths, the method including growing a germanium-silicon layer on a semiconductor donor wafer; defining pixels of the image sensor array on the germanium-silicon layer; defining a first interconnect layer on the germanium-silicon layer, wherein the interconnect layer includes a plurality of interconnects coupled to the first group of photodiodes and the second group of photodiodes; defining integrated circuitry for controlling the pixels of the image sensor array on a semiconductor carrier wafer; defining a second interconnect layer on the semiconductor carrier wafer, wherein the second interconnect layer includes a plurality of interconnects coupled to the integrated circuitry; and bonding the first interconnect layer with the second interconnect layer.

公开(公告)号：US20180012916A1

公开(公告)日：2018-01-11

申请号：US15712777

申请日：2017-09-22

申请人： Artilux Corporation

发明人： Yun-Chung Na ,  Szu-Lin Cheng ,  Shu-Lu Chen ,  Han-Din Liu ,  Hui-Wen Chen ,  Che-Fu Liang

IPC分类号： H01L27/146 ,  H01L31/0232 ,  H01L31/0312 ,  H01L31/18 ,  H01L31/09

CPC分类号： H01L27/14605 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14649 ,  H01L27/1465 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/1469 ,  H01L27/14698 ,  H01L31/02327 ,  H01L31/0312 ,  H01L31/09 ,  H01L31/1812 ,  H01L31/1876 ,  H01L31/1892

摘要： An image sensor array including a carrier substrate; a first group of photodiodes coupled to the carrier substrate, where the first group of photodiodes include a first photodiode, and where the first photodiode includes a semiconductor layer configured to absorb photons at visible wavelengths and to generate photo-carriers from the absorbed photons; and a second group of photodiodes coupled to the carrier substrate, where the second group of photodiodes include a second photodiode, and where the second photodiode includes a germanium-silicon region fabricated on the semiconductor layer, the germanium-silicon region configured to absorb photons at infrared or near-infrared wavelengths and to generate photo-carriers from the absorbed photons.

公开(公告)号：US20170040362A1

公开(公告)日：2017-02-09

申请号：US15228282

申请日：2016-08-04

申请人： Artilux Corporation

发明人： Yun-Chung Na ,  Szu-Lin Cheng ,  Shu-Lu Chen ,  Han-Din Liu ,  Hui-Wen Chen ,  Che-Fu Liang

IPC分类号： H01L27/146 ,  H01L31/0312 ,  H04N5/378 ,  H01L31/028

CPC分类号： H01L27/14605 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14649 ,  H01L27/1465 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/1469 ,  H01L27/14698 ,  H01L31/02327 ,  H01L31/0312 ,  H01L31/09 ,  H01L31/1812 ,  H01L31/1876 ,  H01L31/1892

摘要： An image sensor array including a carrier substrate; a first group of photodiodes coupled to the carrier substrate, where the first group of photodiodes include a first photodiode, and where the first photodiode includes a semiconductor layer configured to absorb photons at visible wavelengths and to generate photo-carriers from the absorbed photons; and a second group of photodiodes coupled to the carrier substrate, where the second group of photodiodes include a second photodiode, and where the second photodiode includes a germanium-silicon region fabricated on the semiconductor layer, the germanium-silicon region configured to absorb photons at infrared or near-infrared wavelengths and to generate photo-carriers from the absorbed photons.

摘要翻译： 一种包括载体衬底的图像传感器阵列; 耦合到所述载体衬底的第一组光电二极管，其中所述第一组光电二极管包括第一光电二极管，并且其中所述第一光电二极管包括被配置为吸收可见波长的光子并从所吸收的光子产生光载流子的半导体层; 以及耦合到所述载体衬底的第二组光电二极管，其中所述第二组光电二极管包括第二光电二极管，并且其中所述第二光电二极管包括在所述半导体层上制造的锗硅区域，所述锗 - 硅区域被配置为在 红外或近红外波长，并从吸收的光子产生光载体。

公开(公告)号：US10256264B2

公开(公告)日：2019-04-09

申请号：US15712777

申请日：2017-09-22

申请人： Artilux Corporation

发明人： Yun-Chung Na ,  Szu-Lin Cheng ,  Shu-Lu Chen ,  Han-Din Liu ,  Hui-Wen Chen ,  Che-Fu Liang

IPC分类号： H01L27/146 ,  H01L31/0312 ,  H01L31/09 ,  H01L31/18 ,  H01L31/0232

摘要： An image sensor array including a carrier substrate; a first group of photodiodes coupled to the carrier substrate, where the first group of photodiodes include a first photodiode, and where the first photodiode includes a semiconductor layer configured to absorb photons at visible wavelengths and to generate photo-carriers from the absorbed photons; and a second group of photodiodes coupled to the carrier substrate, where the second group of photodiodes include a second photodiode, and where the second photodiode includes a germanium-silicon region fabricated on the semiconductor layer, the germanium-silicon region configured to absorb photons at infrared or near-infrared wavelengths and to generate photo-carriers from the absorbed photons.